TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/277
Devices Qualified Level
2N2150 2N2151
JANTX
MAXIMUM RATINGS (TC = 250C unless otherwise noted)
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCBO 150 Vdc
Emitter-Base Voltage VEBO 8.0 Vdc
Base Current IB 2.0 Adc
Collector Current IC 2.0 Adc
Total Power Dissipation @ Tc = +1000C(1) PT 30 W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 3.3 0C/W
1) Derate linearly @ 0.3 W/0C for TC > +1000C
TO-111*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = +250C)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc V(BR)CEO 100 Vdc
Collector-Emitter Breakdown Voltage
IC = 100 µAdc VCBO 150 Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc ICEO 10 µAdc
Collector-Base Cutoff Current
VCB = 120 Vdc ICBO 5.0 µAdc
Collector-Emitter Cutoff Current
VCE = 120 Vdc, VBE = -1.0 Vdc ICEX 5.0 µAdc
Emitter-Base Cutoff Current
VEB = 8.0 Vdc IEBO 2.0 µAdc
Collector-Emitter Cutoff Current
VCE = 120 Vdc, VBE = 0 Vdc ICES 5.0 µAdc
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