PD - 97724 AUTOMOTIVE GRADE AUIRFP1405 Features l l l l l l l l l HEXFET(R) Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* D G S V(BR)DSS 55V RDS(on) typ. max ID (Silicon Limited) 4.2m 5.3m 160A ID (Package Limited) 95A i D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-247AC AUIRFP1405 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Max. Parameter Units 160i 110i ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) A 95 c 640 PD @TC = 25C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS 310 2.0 20 W W/C V mJ IDM Pulsed Drain Current d EAS Single Pulse Avalanche Energy (Thermally Limited) 530 EAS (tested ) Single Pulse Avalanche Energy Tested Value 1060 IAR Avalanche Current c h EAR Repetitive Avalanche Energy c TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw See Fig. 12a, 12b, 15, 16 mJ -55 to + 175 C 300 10 lbf in (1.1N m) y Thermal Resistance Max. --- 0.49 Case-to-Sink, Flat, Greased Surface 0.24 --- Junction-to-Ambient --- 40 Junction-to-Case RCS RJA j Parameter y Typ. RJC A Units C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 09/02/11 AUIRFP1405 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 --- --- 2.0 77 --- --- --- --- --- 0.058 4.2 --- --- --- --- --- --- --- --- 5.3 4.0 --- 20 250 200 -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 95A V VDS = VGS, ID = 250A S VDS = 25V, ID = 95A A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V e f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. Typ. Max. Units --- --- --- --- --- --- --- --- 120 30 53 12 160 140 150 5.0 180 --- --- --- --- --- --- --- nC ns nH Conditions ID = 95A VDS = 44V VGS = 10V VDD = 28V ID = 95A RG = 2.6 VGS = 10V Between lead, e e D LS Internal Source Inductance --- 13 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 5600 1310 350 6550 920 1750 --- --- --- --- --- --- S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V pF G f Diode Characteristics Parameter Min. Typ. Max. Units i IS Continuous Source Current --- --- 95 ISM (Body Diode) Pulsed Source Current --- --- 640 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 70 170 1.3 110 260 c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.12mH RG = 25, IAS = 95A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. 2 Conditions MOSFET symbol A V ns nC D showing the integral reverse G S p-n junction diode. TJ = 25C, IS = 95A, VGS = 0V TJ = 25C, IF = 95A, VDD = 28V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L = 0.12mH, R G = 25, IAS = 95A, VGS =10V. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 95A. R is measured at TJ of approximately 90C. www.irf.com AUIRFP1405 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-247 N/A Class M4 (+/- 700V) AEC-Q101-002 Human Body Model Class H2 (+/- 4000V) AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage. www.irf.com 3 AUIRFP1405 1000 1000 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP 4.5V 10 60s PULSE WIDTH Tj = 25C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP BOTTOM 100 4.5V 1 60s PULSE WIDTH Tj = 175C 10 0.1 1 10 100 0.1 0 VDS, Drain-to-Source Voltage (V) 10 10 100 100 Fig 2. Typical Output Characteristics 140 1000 TJ = 25C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current () 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 175C 100 VDS = 25V 60s PULSE WIDTH 10 4.0 5.0 6.0 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10.0 T J = 25C 120 100 80 T J = 175C 60 40 20 VDS = 10V 380s PULSE WIDTH 0 0 20 40 60 80 100 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com ance AUIRFP1405 10000 ID= 95A VGS, Gate-to-Source Voltage (V) 8000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss 6000 4000 Coss 2000 VDS= 44V VDS= 28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 0 1 10 0 100 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 T J = 175C 10.0 T J = 25C 1.0 VGS = 0V 1.0 1.4 1.8 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 160 200 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100 100sec 10 1 Tc = 25C Tj = 175C Single Pulse 0.1 0.1 0.6 120 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.2 80 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100.0 40 2.2 1 10 1msec 10msec DC 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFP1405 200 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID , Drain Current (A) LIMITED BY PACKAGE 150 100 50 0 25 50 75 100 125 150 ID = 95A VGS = 10V 2.0 1.5 1.0 0.5 175 -60 -40 -20 T C , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.001 J R1 R1 J 1 R2 R2 C 2 1 2 Ri (C/W) 0.2529 0.2368 i (sec) 0.00080 0.014283 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFP1405 15V D.U.T RG VGS 20V + V - DD IAS tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS, Single Pulse Avalanche Energy (mJ) DRIVER L VDS 2000 tp ID 16A 20A BOTTOM 95A TOP 1500 1000 500 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 4.0 VGS(th) Gate threshold Voltage (V) VG Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K VCC 3.5 3.0 ID = 250A 2.5 2.0 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRFP1405 Avalanche Current (A) 10000 Duty Cycle = Single Pulse 1000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 100 0.05 0.10 10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 600 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 95A 500 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy Vs. Temperature 8 www.irf.com AUIRFP1405 D.U.T Driver Gate Drive + - * D.U.T. ISD Waveform Reverse Recovery Current + RG * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRFP1405 TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Part Number AUFP1405 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFP1405 Ordering Information Base part number Package Type Standard Pack AUIRFP1405 TO-247 Form Tube www.irf.com Complete Part Number Quantity 25 AUIRFP1405 11 AUIRFP1405 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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