R MILITARY APPROVED aN AeA LOW LEVEL SWITCHING QN2946A SILICON EPITAXIAL JUNCTION and JAN, PNP TRANSISTORS . JTX, JTXV GEOMETRY 292 pee fo e Toe LOW LEAKAGE owen e e LOW reg (sat) oro 010 aay ELECTRICAL DATA aesoLuTe MAXIMUM. RATINGS ee s na | ; aol fae Emitter To Base me le ma otal (ree air) wre} + . ee aye - e = from en COLLECTOR gti Fad Collector Collector Emitter Offset Voltage Offset Voltage Offset Voltage 0.C. Common Emitter Forward Current 1 Ratio 0.6 Common Collector Forward Current Ratio High Frequency Current Gain inverted Dynamic Saturation Collector Base Ernutter To Base Vee = ~0.5V IC = 1 mA Vex = 70.5V la= -Vee= le=0.1mA iga ima t= tkHz ELECTRICAL CHARACTERISTICS: Ta = 25C (UNLESS OTHERWISE STATED) = imA = IMA CRYSTALONCS 2805 Veterans Highway Suite 14 , 7 Ronkonkoma, N.Y, 11779