2N5883 2N5884 PNP
2N5885 2N5886 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5883, 2N5885
series types are complementary silicon epitaxial base
transistors designed for power amplifier and switching
applications.
MARKING: FULL PART NUMBER
2N5883 2N5884
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N5885 2N5886 UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 25 A
Peak Collector Current ICM 50 A
CContinuous Base Current IB 7.5 A
Power Dissipation PD 200 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 0.875 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=Rated VCBO 1.0 mA
ICEO V
CE=½Rated VCEO 2.0 mA
ICEX V
CE=Rated VCEO, VBE=1.5V 1.0 mA
ICEX V
CE=Rated VCEO, VBE=1.5V, TC=150°C 10 mA
IEBO V
EB=5.0V 1.0 mA
BVCEO I
C=200mA (2N5883, 2N5885) 60 V
BVCEO I
C=200mA (2N5884, 2N5886) 80 V
VCE(SAT) I
C=15A, IB=1.5A 1.0 V
VCE(SAT) I
C=25A, IB=6.25A 4.0 V
VBE(SAT) I
C=25A, IB=6.25A 2.5 V
VBE(ON) V
CE=4.0V, IC=10A 1.5 V
hFE V
CE=4.0V, IC=3.0A 35
hFE V
CE=4.0V, IC=10A 20 100
hFE V
CE=4.0V, IC=25A 4.0
fT V
CE=10V, IC=1.0A, f=1.0MHz 4.0 MHz
Cob V
CB=10V, IE=0, f=1.0MHz (2N5883, 2N5885) 1000 pF
Cob V
CB=10V, IE=0, f=1.0MHz (2N5884, 2N5886) 500 pF
hfe V
CE=4.0V, IC=3.0A, f=1.0kHz 20
tr V
CC=30V, IC=10A, IB1=IB2=1.0A 0.7 μs
ts V
CC=30V, IC=10A, IB1=IB2=1.0A 1.0 μs
tf V
CC=30V, IC=10A, IB1=IB2=1.0A 0.8 μs
TO-3 CASE
R1 (4-December 2012)
www.centralsemi.com
2N5883 2N5884 PNP
2N5885 2N5886 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (4-December 2012)
