© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 8
1Publication Order Number:
MBR2045CT/D
MBR2045CT, MBRF2045CT
SWITCHMODE]
Power Rectifier
Features and Benefits
•Low Forward Voltage
•Low Power Loss / High Efficiency
•High Surge Capacity
•175°C Operating Junction Temperature
•20 A Total (10 A Per Diode Leg)
•Pb−Free Package is Available*
Applications
•Power Supply − Output Rectification
•Power Management
•Instrumentation
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets UL 94, V−0 @ 0.125 in
•Weight: 1.9 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•ESD Rating: Human Body Model = 3B
Machine Model = C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 45 VOLTS
1
3
2, 4
TO−220AB
CASE 221A
STYLE 6
3
4
12
MARKING
DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Diode Polarity
AYWW
MBR2045CTG
AKA
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
TO−220 FULLPAK
CASE 221D
STYLE 3
3
12
AYWW
B2045G
AKA
MBR2045CT, MBRF2045CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
Per Device
Per Diode (TC = 165°C)
IF(AV) 20
10
A
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, TC = 163°C)
IFRM 20 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
See Figure 13
IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance
(MBR2045CT) − Junction−to−Case
− Junction−to−Ambient
(MBRF2045CT) − Junction−to−Case
− Junction−to−Ambient
RqJC
RqJA
RqJC
RqJA
2.0
60
4.75
75
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TJ = 125°C)
(iF = 20 Amps, TJ = 125°C)
(iF = 20 Amps, TJ = 25°C)
vF
−
−
−
0.50
0.67
0.71
0.57
0.72
0.84
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
−
−
10.4
0.02
15
0.1
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
DEVICE ORDERING INFORMATION
Device Order Number Package Type Shipping†
MBR2045CT TO−220 50 Units / Rail
MBR2045CTG TO−220
(Pb−Free)
50 Units / Rail
MBRF2045CTG TO−220FP
(Pb−Free)
50 Units / Rail
MBR2045CT, MBRF2045CT
http://onsemi.com
3
Figure 1. Typical Forward Voltage
1.2
vF
, INSTANTANEOUS VOLTAGE (VOLTS)
100
70
5.0
10
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.0 1.4
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
TJ = 150°C
Figure 2. Maximum Forward Voltage
0.2
1.2
vF
, INSTANTANEOUS VOLTAGE (VOLTS)
100
70
5.0
10
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.00.0
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
TJ = 150°C
0.2
125°C
25°C
125°C
25°C
0.70.3 0.5 0.9 1.10.1
MBR2045CT, MBRF2045CT
http://onsemi.com
4
5.0 150
VR, REVERSE VOLTAGE (VOLTS)
10
1.0
0.1
0.01
0.001
10
, REVERSE CURRENT (mA)IR
20 3025
100
35 40 5045
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
TJ = 150°C
125°C
100°C
75°C
25°C
5.0 150
VR, REVERSE VOLTAGE (VOLTS)
10
1.0
0.1
0.01
0.0001
10
, REVERSE CURRENT (mA)IR
20 3025
100
35 40 5045
TJ = 150°C
125°C
100°C
25°C
140
TC, CASE TEMPERATURE (°C)
10
8.0
6.0
2.0
0
145
, AVERAGE FORWARD CURRENT (AMPS)IF(AV)
150 155
18
160 165
Figure 5. Maximum Surge Capability Figure 6. Current Derating, Case, Per Leg
40
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
16
10
8
4
08
, AVERAGE FORWARD POWER DISSIPATION (WATTS)PF(AV)
12 2016
28
24 3028
Figure 7. Current Derating, Ambient, Per Leg Figure 8. Forward Power Dissipation
16
14
12
6
2
18
14
12
dc
TJ = 175°C
SQUARE
WAVE
dc
SQUARE
WAVE
NUMBER OF CYCLES AT 60 Hz
101.0
200
100
50
30
20
3.02.0 100
70
IFSM, PEAK HALF-WAVE CURRENT (AMPS)
7.05.0 3020 7050
0.001
4.0
TA, AMBIENT TEMPERATURE (°C)
250
12
8.0
4.0
0
50
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
75 175
dc
14
10
6.0
2.0
100 125
SQUARE WAVE
dc
RqJA = 16°C/W
(With TO-220 Heat Sink)
RqJA = 60°C/W
(No Heat Sink)
150
16
18
20
170 175 180
20
22
24
26
2 6 10 1814 22 26
MBR2045CT, MBRF2045CT
http://onsemi.com
5
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01 0.1 1.0 10 100
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
Ppk Ppk
tp
t1
TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
DTJL = Ppk • RqJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where:
DTJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp, etc.
1000
Figure 9. Thermal Response for MBR2045CT
0.07
0.7
Figure 10. Thermal Response Junction−to−Ambient for MBRF2045CT
0.1
100
0.001
1.0 10 100 1000
0.1
0.000001
D = 0.5
0.1
0.05
0.01
SINGLE PULSE
0.2
0.02
1.0
0.01
0.010.0010.00010.00001
10
R(t), TRANSIENT THERMAL RESISTANCE
t1, TIME (sec)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
R(t), TRANSIENT THERMAL RESISTANCE
Figure 11. Thermal Response Junction−to−Case for MBRF2045CT
t1, TIME (sec)
0.1
10
0.001
1.0 10 100 1000
0.1
0.000001
D = 0.5
0.1
0.05
0.01
SINGLE PULSE
0.2
0.02
1.0
0.01
0.010.0010.00010.00001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
MBR2045CT, MBRF2045CT
http://onsemi.com
6
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction di-
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana-
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 12.)
Rectification efficiency measurements show that opera-
tion will be satisfactory up to several megahertz. For ex-
ample, relative waveform rectification efficiency is ap-
proximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction di-
odes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
2.0 ms
1.0 kHz
12 V 100
VCC 12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
100
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 kW
+150 V, 10 mAdc
4.0 mF
+
VR, REVERSE VOLTAGE (VOLTS)
1000
500
300
0
050
700
C, CAPACITANCE (pF)
Figure 12. Typical Capacitance
10 20 30
200
40
Figure 13. Test Circuit for dv/dt and Reverse Surge Current
TJ = 25°C
f = 1 MHz
100
600
400
800
900
MBR2045CT, MBRF2045CT
http://onsemi.com
7
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
MBR2045CT, MBRF2045CT
http://onsemi.com
8
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.617 0.635 15.67 16.12
INCHES
B0.392 0.419 9.96 10.63
C0.177 0.193 4.50 4.90
D0.024 0.039 0.60 1.00
F0.116 0.129 2.95 3.28
G0.100 BSC 2.54 BSC
H0.118 0.135 3.00 3.43
J0.018 0.025 0.45 0.63
K0.503 0.541 12.78 13.73
L0.048 0.058 1.23 1.47
N0.200 BSC 5.08 BSC
Q0.122 0.138 3.10 3.50
R0.099 0.117 2.51 2.96
S0.092 0.113 2.34 2.87
U0.239 0.271 6.06 6.88
−B−
−Y−
G
N
D
L
K
H
A
F
Q
3 PL
123
M
B
M
0.25 (0.010) Y
SEATING
PLANE
−T−
U
C
S
J
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
MBR2045CT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loca
l
Sales Representative
