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BC817 / BC818 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC817 / BC818 Rev. 1.1.0 1
November 2014
BC817 / BC818
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low Power Output Stages
• Complement to BC807 / BC808
Ordering Information(1)
Note:
1. Affix “-16,-25,-40” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape and
reel type packing.
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Marking Package Packing Method
BC81716MTF 8FA SOT-23 3L Tape and Reel
BC81725MTF 8FB SOT-23 3L Tape and Reel
BC81740MTF 8FC SOT-23 3L Tape and Reel
BC81816MTF 8GA SOT-23 3L Tape and Reel
BC81825MTF 8GB SOT-23 3L Tape and Reel
BC81840MTF 8GC SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VCBO Collector-Base Voltage BC817 50 V
BC818 30
VCEO Collector-Emitter Voltage BC817 45 V
BC818 25
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 800 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 to +150 °C
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
BC817 / BC818 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC817 / BC818 Rev. 1.1.0 2
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Note:
2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%
hFE Classification
Symbol Parameter Value Unit
PD
Power Dissipation 310 mW
Derate Above 25°C2.48mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCEO
Collector-Emitter Breakdown
Voltage
BC817 IC = 10 mA, IB = 0 45 V
BC818 25
BVCES
Collector-Emitter Breakdown
Voltage
BC817 IC = 0.1 mA, VBE = 0 50 V
BC818 30
BVEBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 5 V
ICES Collector Cut-Off Current VCE = 25 V, VBE = 0 100 nA
IEBO Emitter Cut-Off Current VEB = 4 V, IC = 0 100 nA
hFE1 DC Current Gain VCE = 1 V, IC = 100 mA 100 630
hFE2 VCE = 1 V, IC = 300 mA 60
VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.7 V
VBE(on) Base-Emitter On Voltage VCE = 1 V, IC = 300 mA 1.2 V
fTCurrent Gain Bandwidth Product VCE = 5 V, IC = 10 mA,
f = 50 MHz 100 MHz
Cob Output Capacitance VCB = 10 V, f = 1 MHz 12 pF
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60 ~ 100 ~ 170 ~
BC817 / BC818 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC817 / BC818 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitte r On Voltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
Figure 5. Power Dissipation vs Ambient Temperature
1 10 100 1000
0
100
200
300
400
500
600
125oC
25oC
-25oC75oC
BC81725MTF
Vce=1V
hfe, Current Gain
Collector Current, [mA]
1 10 100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
125oC
75oC
25oC
VCE = 1V
Vbe(on), Base-Emitter On Voltage,[V]
Collector Current, [mA]
10 100 1000
0.0
0.1
0.2
0.3
0.4
125oC
75oC
25oC
-25oC
Ic=10Ib
Vce(sat), Saturation Voltage,[V]
Collector Current, [mA]
10 100 1000
0.4
0.6
0.8
1.0
1.2
125oC
75oC
25oC
-25oC
Ic=10Ib
Vbe(sat), Saturation Voltage,[V]
Collector Current, [mA]
0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
PD - Power Dissipation (W)
Temperature, [ OC]
BC817 / BC818 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC817 / BC818 Rev. 1.1.0 4
Physical Dimensions
Figure 6. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
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Rev. I72
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