2N6211LEADFREE - Central Semiconductor Corp.

MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6211 2N6212 2N6213 UNITS

Collector-Base Voltage VCBO 275 350 400 V

Collector-Emitter Voltage VCEO 225 300 350 V

Emitter-Base Voltage VEBO 6.0 V

Continuous Collector Current IC 2.0 A

Peak Collector Current ICM 5.0 A

Continuous Base Current IB 1.0 A

Power Dissipation PD 35 W

Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C

Thermal Resistance JC 5.0 °C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

2N6211 2N6212 2N6213

SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS

ICEV V

CE=250V, VBE=1.5V - 0.5 - - - - mA

ICEV V

CE=315V, VBE=1.5V - - - 0.5 - - mA

ICEV V

CE=360V, VBE=1.5V - - - - - 0.5 mA

ICEV V

CE=250V, VBE=1.5V, TC=100°C - 5.0 - - - - mA

ICEV V

CE=315V, VBE=1.5V, TC=100°C - - - 5.0 - - mA

ICEV V

CE=360V, VBE=1.5V, TC=100°C - - - - - 5.0 mA

ICEO V

CE=150V - 5.0 - 5.0 - 5.0 mA

IEBO V

EB=6.0V - 1.0 - 0.5 - 0.5 mA

BVCEV IC=50mA, VBE=1.5V, L=10mH 275 - 350 - 400 - V

BVCER IC=50mA, RBE=50Ω 250 - 325 - 375 - V

BVCEO IC=50mA 225 - 300 - 350 - V

BVEBO IE=1.0mA 6.0 - - - - - V

BVEBO IE=0.5mA - - 6.0 - 6.0 - V

VCE(SAT) IC=1.0A, IB=125mA - 1.4 - 1.6 - 2.0 V

VBE(SAT) IC=1.0A, IB=125mA - 1.4 - 1.4 - 1.4 V

hFE VCE=2.8V, IC=1.0A 10 100 - - - -

hFE VCE=3.2V, IC=1.0A - - 10 100 - -

hFE VCE=4.0V, IC=1.0A - - - - 10 100

2N6211

2N6212

2N6213

SILICON

NPN POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6211, 2N6212,

and 2N6213 are silicon NPN transistors designed

for high speed switching and high voltage amplifier

applications.

MARKING: FULL PART NUMBER

TO-66 CASE

R1 (18-June 2013)

www.centralsemi.com

2N6211

2N6212

2N6213

SILICON

NPN POWER TRANSISTORS

TO-66 CASE - MECHANICAL OUTLINE

MARKING:

FULL PART NUMBER

ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

fT VCE=10V, IC=200mA, f=5.0MHz 20 MHz

Cob VCB=10V, IE=0, f=1.0MHz 220 pF

tr VCC=200V, IC=1.0A, IB1=IB2=125mA 0.6 μs

ts VCC=200V, IC=1.0A, IB1=IB2=100mA 2.5 μs

tf VCC=200V, IC=1.0A, IB1=IB2=125mA 0.6 μs

Is/b VCE=40V, t=1.0s 875 mA

www.centralsemi.com

R1 (18-June 2013)