MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N3724 2N3725 2N3725A UNITS
Collector-Base Voltage VCBO 50 80 80 V
Collector-Emitter Voltage VCEO 30 50 50 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 1.2 A
Peak Collector Current ICM 1.75 A
Power Dissipation PD 0.8 0.8 1.0 W
Power Dissipation (TC=25°C) PD 3.5 3.5 5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3724 2N3725 2N3725A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
IB V
CE=50V - 10 - - - - µA
IB V
CE=80V - - - 10 - 10 µA
ICBO V
CB=40V - 1.7 - - - - µA
ICBO V
CB=40V, TA=100°C - 120 - - - - µA
ICBO V
CB=60V - - - 1.7 - 0.5 µA
ICBO V
CB=60V, TA=100°C - - - 120 - 50 µA
ICES V
CE=50V - 10 - - - - µA
ICES V
CE=80V - - - 10 - 10 µA
BVCBO IC=10µA 50 - 80 - 80 - V
BVCES IC=10µA 50 - 80 - 80 - V
BVCEO IC=10mA 30 - 50 - 50 - V
BVEBO IE=10µA 6.0 - 6.0 - 6.0 - V
VCE(SAT) IC=10mA, IB=1.0mA - 0.25 - 0.25 - 0.25 V
VCE(SAT) IC=100mA, IB=10mA - 0.20 - 0.26 - 0.26 V
VCE(SAT) IC=300mA, IB=30mA - 0.32 - 0.40 - 0.40 V
VCE(SAT) IC=500mA, IB=50mA - 0.42 - 0.52 - 0.52 V
VCE(SAT) IC=800mA, IB=80mA - 0.65 - 0.80 - 0.80 V
VCE(SAT) IC=1.0A, IB=100mA - 0.75 - 0.95 - 0.90 V
VBE(SAT) IC=10mA, IB=1.0mA - 0.76 - 0.76 - 0.76 V
VBE(SAT) IC=100mA, IB=10mA - 0.86 - 0.86 - 0.86 V
VBE(SAT) IC=300mA, IB=30mA - 1.1 - 1.1 - 1.0 V
VBE(SAT) IC=500mA, IB=50mA 0.80 1.1 0.80 1.1 0.80 1.1 V
VBE(SAT) IC=800mA, IB=80mA - 1.5 - 1.5 - 1.3 V
VBE(SAT) IC=1.0A, IB=100mA - 1.7 - 1.7 0.90 1.4 V
2N3724
2N3725
2N3725A
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3724, 2N3725,
2N3725A types are Silicon NPN Planar Epitaxial
Transistors designed for high voltage, high current,
high speed switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
R1 (5-December 2010)
www.centralsemi.com
2N3724
2N3725
2N3725A
NPN SILICON TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
2N3724 2N3725 2N3725A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
hFE V
CE=1.0V, IC=10mA 30 - 30 - 30 -
hFE V
CE=1.0V, IC=100mA 60 150 60 150 60 150
hFE V
CE=1.0V, IC=300mA 40 - 40 - 40 -
hFE V
CE=1.0V, IC=500mA 35 - 35 - 35 -
hFE V
CE=2.0V, IC=800mA 25 - 20 - 25 -
hFE V
CE=5.0V, IC=1.0A 30 - 25 - 25 -
hFE V
CE=5.0V, IC=1.5A - - - - 20 -
fT V
CE=10V, IC=50mA, f=100MHz 300 - 300 - 300 - MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 12 - 10 - 10 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz - 55 - 55 - 55 pF
td V
CC=30V, IC=500mA, IB1=50mA - 10 - 10 - 10 ns
tr V
CC=30V, IC=500mA, IB1=50mA - 30 - 30 - 30 ns
ton V
CC=30V, IC=500mA, IB1=50mA - 35 - 35 - 35 ns
ts V
CC=30V, IC=500mA, IB1=IB2=50mA - 50 - 50 - 50 ns
tf V
CC=30V, IC=500mA, IB1=IB2=50mA - 25 - 25 - 25 ns
toff V
CC=30V, IC=500mA, IB1=IB2=50mA - 60 - 60 - 60 ns
ton V
CC=30V, IC=1.0A, IB1=IB2=100mA - - - - - 50 ns
toff V
CC=30V, IC=1.0A, IB1=IB2=100mA - - - - - 50 ns
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (5-December 2010)
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