TOSHIBA 2SC2236 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2$C2236 AUDIO POWER AMPLIFIER APPLICATIONS. Unit in mm 15.1MAX. Complementary to 2SA966 and 3 Watts Output Applications. MAXIMUM RATINGS (Ta = 25C) Z CHARACTERISTIC SYMBOL | RATING | UNIT . Collector-Base Voltage VCBO 30 Vv 127 1 Collector-Emitter Voltage VCEO 30 Vv 25a Z Emitter-Base Voltage VEBO 5 Vv ons } Z Collector Current Ic 1.5 A = Base Current Ip 0.15 A 1, EMITTER 2. COLLECTOR Collector Power Dissipation Pc 900 mW 3. BASE Junction Temperature Tj 150 C JEDEC TO-92MOD Storage Temperature Range Tstg 55~150 C EIAJ _ TOSHIBA 2-5J1A ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 0.36g CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current ICBO VcBp=30V, Ip=0 100 nA Emitter Cut-off Current Igpo | VEB=5V, Ic=0 100 | nA Collector-Emitter Breakdown _ _ Voltage 'V (BR) CEO | {c =10mA, Ip=0 30 Vv Emitter-Base Breakdown Voltage 'V (BR) EBO | Ik=1mA, Ic =0 5 Vv DC Current Gain hE (Note) | Vog=2V, Ic =500mA 100 320 Collector-Emitter Saturation _ _ Voltage VCE (sat) |IG=1.5A, Ip =0.03A 2.0 Vv Base-Emitter Voltage VBE VCE =2V, I=500mA 1.0 Vv Transition Frequency fp VcE=2V, I=500mA 120 | MHz Collector Output Capacitance Cob Vcp=10V, Ig=0, f=1MHz| 30 pF Note : hrg Classification O : 100~200, Y : 160~320 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ the information contained herein is subject to change without notice. 1997-09-01 1/2 TOSHIBA 2S C2236 (mA) COLLECTOR-EMITTER SATURATION , VOLTAGE Vor Gat) (V) COLLECTOR CURRENT Ic COLLECTOR POWER DISSIPATION Po (mW) 1400 1200 1000 800 400 200 H e 2 oo f Se 2 ao oO Re Ww ot o Qo Be 800 600 200 I VCE 10 COMMON EMITTER Ta=25C Ip=imA 2 4 6 8 10 12 14 #16 18 COLLECTOR-EMITTER VOLTAGE Veg (V) VCE (sat) Ic COMMON EMITTER Ic /Tp=50 Ta= 25C 25 100 3 10 30 100 =6300)=6. 1000 = 3000 COLLECTOR CURRENT Ic (mA) Pc Ta 20 40 60 80 100 120 140 = 160 AMBIENT TEMPERATURE Ta (C) COLLECTOR CURRENT Ig (mA) DC CURRENT GAIN hpg Ic (A) COLLECTOR CURRENT 1000 500 co o o e ow & oo oo e pe. 1600 1400 1200 1000 800 600 400 200 hFE Ic Ta=100C 25 25 COMMON EMITTER Vor=2V 3 10 30 100 = 300 COLLECTOR CURRENT Ic (mA) Ic VBE Ta=100C COMMON EMITTER Voe=2V 02 04 06 08 10 12 14 16 BASE-EMITTER VOLTAGE VpE (V) SAFE OPERATING AREA 1000 3000 1.8 $T TT) Ig MAX. (PULSED) 3% ~ 100ms*X 10ms%X rie wax NTN ino | (CONTINUOUS) N \ \ 1 N\A A 4 N. x 4 = \ \ Isr SAY 0.5 ~S \ CI | | DC OPERATION NF 0.37) Ta =25C Ny N NN N 0.1 %% SINGLE NONREPETITIVE [AX oog| PULSE Ta=26C NX ! CURVES MUST BE DERATED A LINEARLY WITH INCREASE ool tN TEMPERATURE, VCEO MAX. 0.3 1 3 10 30 COLLECTOR-EMITTER VOLTAGE Veg (V) 1997-09-01 2/2