2007-04-20
1
BCW66
12
3
NPN Silicon AF Transistors
• For general AF applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCW68 (PNP)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCW66F
BCW66KF*
BCW66G
BCW66KG*
BCW66H
BCW66KH*
EFs
EFs
EGs
EGs
EHs
EHs
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
* Shrinked chip version
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 45 V
Collector-base voltage VCBO 75
Emitter-base voltage VEBO 5
Collector current IC800 mA
Peak collector current ICM 1 A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 79 °C, BCW66
TS ≤ 115 °C, BCW66K
Ptot
330
500
mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
1Pb-containing package may be available upon special request
2007-04-20
2
BCW66
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BCW66
BCW66K
RthJS
≤ 215
≤ 70
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 V(BR)CEO 45 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 V(BR)CBO 75 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.02
20
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0 IEBO - - 20 nA
DC current gain2)
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.F
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.G
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.H
IC = 100 mA, VCE = 1 V, hFE-grp.F
IC = 100 mA, VCE = 1 V, hFE-grp.G
IC = 100 mA, VCE = 1 V, hFE-grp.H
IC = 500 mA, VCE = 1 V, hFE-grp.F, G, H
hFE
75
110
180
100
160
250
40
-
-
-
160
250
350
-
-
-
-
250
400
630
-
-
Collector-emitter saturation voltage2)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
-
-
-
0.3
0.45
V
Base emitter saturation voltage2)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VBEsat
-
-
-
-
1.25
1.25
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
2007-04-20
3
BCW66
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz fT- 170 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, BCW66
VCB = 10 V, f = 1 MHz, BCW66K
Ccb
-
-
6
3
-
-
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, BCW66
VEB = 0.5 V, f = 1 MHz, BCW66K
Ceb
-
-
60
40
-
-
2007-04-20
4
BCW66
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 10 10 10
BCW 65/66 EHP00396
h
mA
-1 0 2 3
FE
3
10
102
0
10
5
5
101
1
10
5
100
25
-50
555
C
Ι
˚C
˚C
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
10 0 600
BCW 65/66 EHP00395
VCE sat
10
mA
10
10
10
3
2
1
0
-1
5
5
5
mV
200 400 800
150
25
-50
C
Ι
˚C
˚C
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
10 03
BCW 65/66 EHP00394
VBE sat
10
mA
10
Ι
C
10
10
3
2
1
0
-1
5
5
5
V
12 4
150
25
-50 ˚C
˚C
˚C
Collector cutoff current ICBO = ƒ(TA)
VCB = VCEmax
10 0 50 100 150
BCW 65/66 EHP00393
T
A
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
5
4
3
2
1
0
max
typ
˚C
2007-04-20
5
BCW66
Transition frequency fT = ƒ(IC)
VCE = 5 V
10
EHP00391BCW 65/66
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
BCW66: - - - , BCW66K: ____
0 2 4 6 8 10 12 14 16 V20
CCB/CEB
0
5
10
15
20
25
30
35
40
45
50
55
60
pF
75
VCB/VEB
CEB: BCW66
CEB: BCW66K
CCB: BCW66
CCB: BCW66K
Total power dissipation Ptot = ƒ(TS)
BCW66: - - - , BCW66K: ____
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
300
350
400
450
mW
550
Ptot
BCW66K
BCW66
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00392BCW 65/66
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
PDC
P
p
t
2007-04-20
6
BCW66
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25 MBC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2007-04-20
7
BCW66
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
