DATA SH EET
Product data sheet
Supersedes data of 1997 Jun 20
1999 Apr 12
DISCRETE SEMICONDUCTORS
BC849W; BC850W
NPN general purpose transistors
db
ook, halfpage
M3D102
1999 Apr 12 2
NXP Semiconductors Product data sheet
NPN general purpose transistors BC849W; BC850W
FEATURES
•Low current (ma x. 10 0 mA)
•Low voltage (max. 45 V).
APPLICATIONS
•Low noise stages in tape recorders, hi-fi amplifiers and
other audio- frequency equip men t.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE
NUMBER MARKING
CODE(1) TYPE
NUMBER MARKING
CODE(1)
BC849BW 2B∗BC850BW 2F∗
BC849CW 2C∗BC850CW 2G∗
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT323) and sym bol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BC849W −30 V
BC850W −50 V
VCEO collector-emitter voltage open base
BC849W −30 V
BC850W −45 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 12 3
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistors BC849W; BC850W
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 30 V −−15 nA
IE = 0; VCB = 30 V; Tj = 150 °C−−5μA
IEBO emitter cut-off current IC = 0; VEB = 5 V −−100 nA
hFE DC current gain IC = 2 mA; VCE = 5 V; see Figs 2 and 3
BC849BW; BC850BW 200 −450
BC849CW; BC850CW 420 −800
VCEsat collector-emitter saturation
voltage IC = 10 mA; IB = 0.5 mA −−250 mV
IC = 100 mA; IB = 5 mA; note 1 −−600 mV
VBE base-emitter vo ltage IC = 2 mA; VCE = 5 V 580 −700 mV
IC = 10 mA; VCE = 5 V −−770 mV
Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz −−3pF
Ceemitter cap a citance IC = ic = 0; VEB = 500 mV; f = 1 MHz −11 −pF
fTtransition freque ncy IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −−MHz
Fnoise figure IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz −−4dB
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz −−4dB
1999 Apr 12 4
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistors BC849W; BC850W
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
300
100
200
MBH724
10
−2
10
−1
hFE
1IC (mA)
10 10
3
10
2
VCE = 5 V
BC849BW; BC850BW.
Fig.3 DC current gain; typical values.
handbook, full pagewidth
0
600
200
400
MBH725
10
−2
10
−1
hFE
1IC (mA)
10 10
3
10
2
VCE = 5 V
BC849CW; BC850CW.
1999 Apr 12 5
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistors BC849W; BC850W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28
1999 Apr 12 6
NXP Semiconductors Product data sheet
NPN general purpose transistors BC849W; BC850W
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warran ted to be suitable for
use in medical, military, aircraft, space or life support
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of an NXP Semiconductors product can reason ably be
expected to result in pe rs onal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other cond itions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon du ctors. No changes were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 115002 /00/03/pp7 Date of releas e: 1999 Apr 12 Document orde r number: 9397 750 05587
