NPN Silicon Darlington Transistors PZTA 13 PZTA 14 For general AF applications High collector current High current gain Complementary types: PZTA 63 PZTA 64 (PNP) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZTA 13 PZTA 14 PZTA 13 PZTA 14 Q62702-Z2033 Q62702-Z2034 B SOT-223 C E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCES 30 Collector-base voltage VCB0 30 Emitter-base voltage VEB0 10 Collector current IC 300 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 C Ptot 1.5 W Junction temperature Tj 150 C Storage temperature range Tstg V mA - 65 ... + 150 Thermal Resistance Junction - ambient2) Rth JA 72 Junction - soldering point Rth JS 17 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZTA 13 PZTA 14 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 100 A V(BR)CES 30 - - Collector-base breakdown voltage IC = 100 A, IB = 0 V(BR)CB0 30 - - Emitter-base breakdown voltage IE = 10 A, IC = 0 V(BR)EB0 10 - - Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, IE = 0, TA = 150 C ICB0 - - - - 100 10 nA A Emitter-base cutoff current VEB = 10 V, IC = 0 IEB0 - - 100 nA 5000 10000 10000 20000 - - - - - - - - DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V - hFE PZTA 13 PZTA 14 PZTA 13 PZTA 14 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VCEsat - - 1.5 Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VBEsat - - 2.0 fT 125 - - V AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 MHz PZTA 13 PZTA 14 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz Collector cutoff current ICB0 = f (TA) VCE = 30 V DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 3 PZTA 13 PZTA 14 Collector-emitter saturation voltage IC = f (VCE sat) hFE = 1000 Base-emitter saturation voltage IC = f (VBE sat) hFE = 1000 Permissible pulse load Ptot max / Ptot DC = f (tp) Semiconductor Group 4