Semiconductor Group 1
NPN Silicon Darlington Transistors PZTA 13
PZTA 14
Maximum Ratings
Pin Configuration
1234
B C E C
Type Ordering Code
(tape and reel)
Marking Package1)
PZTA 13
PZTA 14 Q62702-Z2033
Q62702-Z2034
PZTA 13
PZTA 14 SOT-223
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm ×40 mm ×1.5 mm/6 cm2 Cu.
Parameter Symbol Values Unit
Emitter-base voltage VEB0
Collector-base voltage VCB0
Junction temperature Tj˚C
Total power dissipation, TS = 124 ˚C Ptot W
Storage temperature range Tstg
Collector-emitter voltage VCES V
Thermal Resistance
Junction - ambient2) Rth JA ≤ 72 K/W
10
1.5
150
– 65 … + 150
30
Collector current ICmA300
Peak collector current ICM 500
Junction - soldering point Rth JS ≤ 17
30
Base current IB100
Peak base current IBM 200
●For general AF applications
●High collector current
●High current gain
●Complementary types: PZTA 63
PZTA 64 (PNP)
5.91
Semiconductor Group 2
PZTA 13
PZTA 14
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 100 µAV(BR)CES 30 – –
nA
µA
Collector-base cutoff current
VCE = 30 V, IE = 0
VCE = 30 V, IE = 0, TA = 150 ˚C
ICB0 –
––
–100
10
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Emitter-base breakdown voltage
I
E = 10 µA, IC = 0 V(BR)EB0 10 – –
V
Collector-emitter saturation voltage1)
I
C = 100 mA, IB = 0.1 mA VCEsat – – 1.5
–DC current gain
I
C = 10 mA, VCE = 5 V PZTA 13
PZTA 14
I
C = 100 mA, VCE = 5 V PZTA 13
PZTA 14
hFE 5000
10000
10000
20000
–
–
–
–
–
–
–
–
MHzTransition frequency
I
C = 50 mA, VCE = 5 V, f = 100 MHz fT125 – –
AC characteristics
Collector-base breakdown voltage
I
C = 100 µA, IB = 0 V(BR)CB0 30 – –
nAEmitter-base cutoff current
VEB = 10 V, IC = 0 IEB0 – – 100
Base-emitter saturation voltage1)
I
C = 100 mA, IB = 0.1 mA VBEsat – – 2.0
1) Pulse test conditions: t≤300 µs, D = 2 %.
Semiconductor Group 3
PZTA 13
PZTA 14
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Collector cutoff current ICB0 =f(TA)
VCE = 30 V
Transition frequency fT=f(IC)
VCE = 5 V, f = 100 MHz
DC current gain hFE =f(IC)
VCE =5V
Semiconductor Group 4
PZTA 13
PZTA 14
Collector-emitter saturation voltage
IC = f (VCE sat)
hFE = 1000
Permissible pulse load Ptot max /Ptot DC = f (tp)
Base-emitter saturation voltage
IC = f (VBE sat)
hFE = 1000
