2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits BVDSS RDS(ON) Max ID Max TA = +25C 60V 7.5 @ VGS = 5V 210mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Notes 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) ideal for high efficiency power management applications. Mechanical Data Motor Control Power Management Functions Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Plated Leads. Solderable per MILSTD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.009 grams (Approximate) Drain SOT23 D Gate Top View S G Source Equivalent Circuit Top View Ordering Information (Note 5) Part Number 2N7002-7-F 2N7002-13-F 2N7002Q-7-F Notes: Compliance Standard Standard Automotive Case SOT23 SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Date Code Key Year 2002 Code N Month Code Jan 1 ~ ~ Feb 2 2N7002 Document number: DS11303 Rev. 35 - 2 2018 F Mar 3 YM K72 K72 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: F = 2018) M = Month (ex: 9 = September) 2019 G Apr 4 2020 H May 5 2021 I Jun 6 1 of 5 www.diodes.com 2022 J Jul 7 2023 K Aug 8 Sep 9 2024 L Oct O 2025 M Nov N 2026 N Dec D July 2018 (c) Diodes Incorporated 2N7002 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 7) VGS = 10V Steady State Maximum Continuous Body Diode Forward Current (Note 7) Continuous Pulsed TA = +25C TA = +85C TA = +100C TA = +25C TA = +85C TA = +100C Pulsed Continuous Symbol VDSS VDGR Value 60 60 VGSS 40 ID 170 120 105 20 IS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) V mA 210 150 135 0.5 2 800 ID IDM Unit V V mA A mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 7) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics PD RJA RJC TJ, TSTG Value 370 540 348 241 91 -55 to +150 Unit mW C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance @ TC = +25C @ TC = +125C @ TJ = +25C @ TJ = +25C @ TJ = +125C Symbol Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10A IDSS A VDS = 60V, VGS = 0V IGSS 1.0 500 10 nA VGS = 20V, VDS = 0V VGS(TH) 1.0 2.5 V 3.2 4.4 7.5 5.0 13.5 VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA RDS(ON) Test Condition ID(ON) gFS VSD 0.5 80 1.0 0.78 1.5 A mS V Ciss Coss Crss 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Gate Resistance Rg 120 VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge SWITCHING CHARACTERISTICS (Note 9) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Qg Qgs Qgd 223 82 178 pC VDS = 10V, ID = 250mA tD(ON) tR tD(OFF) tF 2.8 3.0 7.6 5.6 ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 On-State Drain Current Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2N7002 Document number: DS11303 Rev. 35 - 2 2 of 5 www.diodes.com July 2018 (c) Diodes Incorporated 2N7002 7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN-SOURCE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 4 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 4 3 2 1 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 1.0 6 2.5 2.0 1.5 VGS = 10V, ID = 200mA 5 4 ID = 500mA 3 ID = 50mA 2 1 0 0 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature 10 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 400 9 350 Pd, POWER DISSIPATION (mW) VGS, GATE SOURCE CURRENT (V) 5 0 0 5 3.0 1.0 -55 6 8 7 6 5 4 3 2 300 250 200 150 100 50 1 0 0 0.2 0.6 0.8 0.4 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics 2N7002 Document number: DS11303 Rev. 35 - 2 1 3 of 5 www.diodes.com 0 50 75 25 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 0 July 2018 (c) Diodes Incorporated 2N7002 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X 2N7002 Document number: DS11303 Rev. 35 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 4 of 5 www.diodes.com July 2018 (c) Diodes Incorporated 2N7002 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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