DARLINGTONS TABLE 5 NPN and PNP SILICON HIGH CURRENT DARLINGTON TRANSISTORS The devices shown in this table are designed for applications requiring very high current gain. The monolithic construction has the inherent advantages of fast switching times, low saturation voltages and low leakage currents. The devices are listed in order of decreasing Collector Current (lp (max)), Breakdown Voltages and Power Dissipation (P,,) etc. Max Vee(sat) hee Prot le at at at Type |(Max)| Vego | Vceo Tease | Package | Complement lc | Ip Ic |=26C A Vv Vv Vv A | mA| min|max| A WwW NPN BDX33D 10 | 120 | 120 |2-5| 3 6 | 750} | 3 70 TO-220 _ BDX33C 10 | 100 | 100 /2:-5! 3 6 | 750} j| 3 70 TO-220 BDX34C 2N6385 10 80 80 2 5 }10)1K]20K| 5 100 | TO-3 _ BDX33B 10 80 80 |2:5] 3 6 |750| | 3 70 TO-220 BDX34B 2N6384 10 60 60 2 5 110 | 1K }20K; 5 100 | TO-3 _ BDX33A 10 60 60 |2-5| 4 8 |750)/ | 4 70 TO-220 BDX34A BDX33 10 a5 45 |2-5| 4 8 |750| | 4 70 TO-220 BDX34 2N6383 10 40 40 2 5 110] 1K |20K; 5 100 | TO-3 _ BD323C 2 80 60 11-7] 2 2 |10K) | 1 10 TO-39 _ BD323B 2 80 60 |1:7) 2 2|5K/} 1 10 TO-39 BD323A 2 80 60 |1-7] 2 2/1K/y] 1 10 TO-39 _ BD321C 2 80 60 |17) 2 2 ;10K}; } 1 5 TO-39 _ BC321B 2 80 60 |1:7| 2 2 |5K}]] 1 5 TO-39 BC321A 2 80 60 |1-7] 2 2/i1K;/] 1 5 TO-39 _ BD322C 1 80 60 |1-6] 1 1 |10K]| {}0-5) 7-5 | TO-39 _ BD322B 1 80 60 |1:6] 1 1 5K | |0-5| 7-5 | TO-39 _ BD322A 1 80 60 |1:6] 1 1 1K | |0-5| 7-5 | TO-39 _ BD320C 1 80 60 |1:6) 1 1 |10K) |0-5 5 TO-39 _ BD320B 1 80 60 |1-6; 1 1 5K | |05 5 TO-39 _ BD320A 1 80 60 |16] 1 1 1K |] |0-5 5 TO-39 _ BCX21 1 60 45 |1-6) 1 1 |1-5K) |0-5] 3-5 | TO-39 _ PNP BDX34C 10 | 100 | 100 |}2-5| 3 6 |750| | 3 70 TO-220 BDX33C BDX34B 10 80 80 |2-5] 3 6 1750; | 3 70 TO-220 BDX33B BDX34A 10 60 60 |2-5| 4 8 | 750] ]|] 4 70 TO-220 BDX33A BDX34 10 45 45 |}2-5)] 4 8 |750}; | 4 70 TO-220 BDX33 15