BC807W
PNP General Purpose Transistor
FEATURES
•
Ideally suited for automatic insertion
•
Epitaxial planar die construction
•
Complementary to BC817W
MECHANICAL DATA
•
Case: SOT-323 Plastic
•
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
•
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings
@ T
A
= 25℃
Characteristic Symbol
Value
Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-45 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current -Continuous I
C
-500 mA
Collector Power Dissipation P
C
300 mW
Junction Temperature T
J
150 ℃
Storage Temperature Range T
STG
-55~+150 ℃
Electrical Characteristics
@
T
A
= 25℃ unless otherwise specified
Characteristic Test Condition Symbol
Min. Typ. Max.
Unit
Collector-base breakdown voltage I
C
=-10µA,I
E
=0 V
CBO
-50 V
Collector-emitter breakdown voltage
I
C
=-10mA,I
B
=0 V
CEO
-45 V
Emitter-base breakdown voltage I
E
=-1µA,I
C
=0 V
EBO
-5 V
Collector-base cut-off current V
CB
=-20V,I
E
=0 I
CBO
-0.1 uA
Collector-emitter cut-off current V
CE
=-20V,I
B
=0 I
CEO
-0.2 uA
Emitter-base cut-off current V
EB
=-5V,I
C
=0 I
EBO
-0.1 uA
DC current gain V
CE
=-1V,I
C
=-100mA h
FE
100 600 V
Collector-emitter saturation voltage I
C
=-500mA,I
B
=-50mA V
CE
(sat)
- -0.7 V
Base-emitter voltage I
C
=-500mA,V
CE
=-1V V
BE
- -1.2 V
Transition frequency V
CE
=-5V,I
C
=-10mA,
f=100MHz f
T
80 MHz
Collector output capacitance V
CB
=-10V,f=1MHz C
ob
10 pF
REV. 1, Oct-2010, KSPR02