PBSS4330X - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2003 Jul 14 2003 Nov 28

DISCRETE SEMICONDUCTORS

PBSS4330X

30 V, 3 A

NPN low VCEsat (BISS) transistor

ook, halfpage

M3D109

2003 Nov 28 2

Philips Semiconductors Product speciﬁcation

30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X

FEATURES

•SOT89 (SC-62) package

•Low collector-emitter saturation voltage VCEsat

•High collector current capability: IC and ICM

•Higher efficiency leading to less heat generation

•Reduced printed-circuit board requirements.

APPLICATIONS

•Power management

– DC/DC converters

– Supply line switching

– Battery charger

– LCD backlighting.

•Peripheral drivers

– Driver in low supply voltage applications

(e.g. lamps and LEDs)

– Inductive load driver (e.g. relays, buzzers

and motors).

DESCRIPTION

NPN low VCEsat transistor in a SOT89 plastic package.

MARKING

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE

PBSS4330X 1R

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 30 V

ICcollector current (DC) 3 A

ICM peak collector current 5 A

RCEsat equivalent on-resistance 100 mΩ

PIN DESCRIPTION

1 emitter

2 collector

3 base

handbook, halfpage

123

Bottom view

MAM296

Fig.1 Simplified outline (SOT89) and symbol.

RELATED PRODUCTS

ORDERING INFORMATION

TYPE NUMBER DESCRIPTION FEATURE

PBSS5330X PNP complement −

PBSS4350X 50 V, 3 A NPN low VCEstat (BISS) transistor higher VCEO

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS4330X −plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

2003 Nov 28 3

Philips Semiconductors Product speciﬁcation

30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin plated; standard footprint.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin plated; mounting pad for collector 1 cm2.

3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin plated; mounting pad for collector 6 cm2.

4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin plated.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −50 V

VCEO collector-emitter voltage open base −30 V

VEBO emitter-base voltage open collector −6V

Ccollector current (DC) note 4 −3A

CM peak collector current limited by Tj max −5A

Bbase current (DC) −0.5 A

Ptot total power dissipation Tamb ≤25 °C

note 1 −550 mW

note 2 −1W

note 3 −1.4 W

note 4 −1.6 W

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

2003 Nov 28 4

Philips Semiconductors Product speciﬁcation

30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X

handbook, halfpage

0 40 80 160

Ptot

(W) (1)

(2)

(3)

1.6

120

1.2

0.8

0.4

MLE372

Tamb (°C)

(4)

Fig.2 Power derating curves.

(1) Ceramic PCB; 7 cm2 mounting pad for collector.

(2) FR4 PCB; 6 cm2 copper mounting pad for collector.

(3) FR4 PCB; 1 cm2 copper mounting pad for collector.

(4) Standard footprint.

2003 Nov 28 5

Philips Semiconductors Product speciﬁcation

30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin plated; standard footprint.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin plated; mounting pad for collector 1 cm2.

3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin plated; mounting pad for collector 6 cm2.

4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin plated.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air

note 1 225 K/W

note 2 125 K/W

note 3 90 K/W

note 4 80 K/W

Rth j-s thermal resistance from junction to soldering point 16 K/W

handbook, full pagewidth

103

102

10−1

10−510−410−310−210−11

Zth

(K/W)

tp (s)

10 102103

MLE373

δ =

(10)

(9)

(8)

(4)

(3)

(2)

(1)

(5)

(6)

(7)

Fig.3 Transient thermal impedance as a function of pulse time; typical values.

(1) δ=1.

(2) δ= 0.75. (3) δ= 0.5.

(4) δ= 0.33. (5) δ= 0.2.

(6) δ= 0.1. (7) δ= 0.05.

(8) δ= 0.02. (9) δ= 0.01.

(10) δ=0.

Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.

2003 Nov 28 6

Philips Semiconductors Product speciﬁcation

30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current VCB = 30 V; IE=0 −−100 nA

VCB = 30 V; IE= 0; Tj= 150 °C−−50 µA

ICES collector cut-off current VCE = 30 V; VBE =0 −−100 nA

IEBO emitter cut-off current VEB =5V; I

C=0 −−100 nA

hFE DC current gain VCE =2V

C= 0.1 A 300 −−

= 0.5 A 300 −−

= 1 A; note 1 270 −700

IC= 2 A; note 1 230 −−

= 3 A; note 1 180 −−

CEsat collector-emitter saturation

voltage IC= 0.5 A; IB=50mA −−60 mV

IC= 1 A; IB=50mA −−110 mV

IC= 2 A; IB= 100 mA −−220 mV

IC= 3 A; IB= 300 mA; note 1 −−300 mV

RCEsat equivalent on-resistance IC= 3 A; IB= 300 mA; note 1 −80 100 mΩ

VBEsat base-emitter saturation voltage IC= 2 A; IB= 100 mA −−1.1 V

IC= 3 A; IB= 300 mA; note 1 −−1.2 V

VBEon base-emitter turn-on voltage VCE =2V; I

C=1A 1.0 −−V

Ttransition frequency IC= 100 mA; VCE = 5 V; f = 100 MHz 100 −−MHz

Cccollector capacitance VCB = 10 V; IE=I

e= 0; f = 1 MHz −−30 pF

2003 Nov 28 7

Philips Semiconductors Product speciﬁcation

30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X

handbook, halfpage

800

200

400

600

MRC321

10−111010

2103104

hFE

IC (mA)

(1)

(3)

(2)

Fig.4 DC current gain as a function of collector

current; typical values.

VCE =2V.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

1.2

0.4

0.8

MRC322

10−111010

2103104

VBE

(V)

IC (mA)

(1)

(3)

(2)

Fig.5 Base-emitter voltage as a function of

collector current; typical values.

VCE =2V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 100 °C.

handbook, halfpage

10−1

10−2

10−3

MRC323

10−111010

2104

103

VCEsat

(V)

IC (mA)

(1)

(2)

(3)

Fig.6 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

10−1

10−2

10−3

MRC324

10−111010

2104

103

VCEsat

(V)

IC (mA)

(1)

(2)

(3)

Fig.7 Collector-emitter saturation voltage as a

function of collector current; typical values.

Tamb =25°C.

(1) IC/IB= 100.

(2) IC/IB= 50.

(3) IC/IB= 10.

2003 Nov 28 8

Philips Semiconductors Product speciﬁcation

30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X

handbook, halfpage

0.2

1.2

0.8

1.0

MRC325

10−111010

2103104

0.6

0.4

VBEsat

(V)

IC (mA)

(2)

(3)

(1)

Fig.8 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 100 °C.

handbook, halfpage

0 2.0

0.4 0.8 1.2 1.6

MRC326

VCE (V)

(A)

(1)

(2)

(3)

(4)

(5)

(8)

(9)

(10)

(6)

(7)

Fig.9 Collector current as a function of

collector-emitter voltage; typical values.

Tamb =25°C.

(1) IB= 25.0 mA.

(2) IB= 22.5 mA.

(3) IB= 20.0 mA.

(4) IB= 17.5 mA.

(5) IB= 15.0 mA.

(6) IB= 12.5 mA.

(7) IB= 10.0 mA.

(8) IB= 7.5 mA.

(9) IB= 5.0 mA.

(10) IB= 2.5 mA.

handbook, halfpage

102

10−1

10−2

MRC327

10−1110 10

3104

102

RCEsat

(Ω)

IC (mA)

(1) (2)

(3)

Fig.10 Collector-emitter equivalent on-resistance

as a function of collector current; typical

values.

IC/IB= 20.

(1) Tamb = 100 °C. (2) Tamb =25°C. (3) Tamb =−55 °C.

handbook, halfpage

MRC328

10−111010

2103104

10−1

10−2

102

103

RCEsat

(Ω)

IC (mA)

(1)

(2)

(3)

Fig.11 Collector-emitter equivalent on-resistance

as a function of collector current; typical

values.

(1) IC/IB= 10. (2) IC/IB= 5. (3) IC/IB=1.

amb =25°C.

2003 Nov 28 9

Philips Semiconductors Product speciﬁcation

30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 97-02-28

99-09-13

EHE

0 2 4 mm

scale

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.37

4.6

4.4

2.6

2.4

4.25

3.75

3.0

0.13

1.5

min.

0.8

0.53

0.40

1.8

1.4

2003 Nov 28 10

Philips Semiconductors Product speciﬁcation

30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratany otherconditionsabove thosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

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Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

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reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

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Printed in The Netherlands R75/02/pp11 Date of release: 2003 Nov 28 Document order number: 9397 750 12146