BAV70 / BAW56 / BAV99
Diodes
1/3
Switching diode
BAV70 / BAW56 / BAV99
∗This product is available only outside of Japan.
zApplication
Ultra high speed switching
zFeatures
1) Small surface mounting type. (SSD3)
2) High speed. (trr=1.5ns T yp.)
3) Four types of circuit configurations are available.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
0
~
0.1
0.2Min.
2.4±0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.69
+0.1
−0.05
Each lead has same dimensions
(1)
(3)
(2)
zMarking (T ype No.)
Product name Type No.
RA4
RA7
RA1
BAV70
BAW56
BAV99
(Ex.) BAV70
RA4
zEquiva lent circuit s
BAV70 BAW56 BAV99
BAV70 / BAW56 / BAV99
Diodes
2/3
zA bsolute maximum ratings (Ta=25°C)
P / N Type
Peak
reverse
voltage
V
RM
(V)
DC
reverse
voltage
V
R
(V)
Peak
forward
current
I
FM
(mA)
Mean
rectifying
current
I
F
(mA)
Surge
current
(1µs)
Isurge (A)
Power
dissipation
(TOTAL)
Pd (mW)
Junction
temperature
Tj (°C)
Storage
temperature
Tstg (°C)
Type
BAV70
BAW56
BAV99
75
85
85
70
70
75
450
450
450
215
215
215
4
4
4
300
225
300
150
150
150
−55 to +150
−55 to +150
−55 to +150
N
P
N
zElectrical characteristics (Ta=25°C)
Type
BAV70
BAW56
BAV99
1.25
1.25
1.25
150
150
150
2.5
1.0
1.0
70
75
75
1.5
2.0
1.5
0
0
0
1
1
1
4
4
4
10
10
10
10
10
10
VF (V)
Max. Cond.
IF (mA) I
R
(µA)
Max. Cond.
VR (V) CT (pF)
Max. Cond.
VR (V) f (MHz) trr (ns)
Max. Cond.
VR (V) IF (mA)
Forward voltage Reverse current
Capacitance between terminals
Reverse recovery time
zElectrical characteristic curves (Ta=25°C)
0
25
50
75
100
125
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : T
a (
°C)
POWER DISSIPATION : Pd / Pd
Max. (%)
Fig.1 Power attenuation curve
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
50
20
10
5
2
1
0.5
0.2
0.1
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig.2 Forward characteristics
(P Type)
Ta=85°C
50°C
25°C
0°C
−30°C
REVERSE VOLTAGE : V
R
(V)
REVERSE CURRENT : I
R
(nA)
0.01
100
1000
10
0.1
1
10 20 30 40 50
0
Fig.3 Reverse characteristics
(P Type)
Ta=100°C
75°C
50°C
25°C
0°C
−25°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
50
20
10
5
2
1
0.5
0.2
0.1
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig.4 Forward characteristics
(N Type)
Ta=85°C
50°C
25°C
0°C
−30°C
REVERSE VOLTAGE : V
R
(V)
REVERSE CURRENT : I
R
(nA)
0.01
100
1000
10
0.1
1
10 20 30 40 80706050
0
Fig.5 Reverse characteristics
(N Type)
Ta=100°C
75°C
50°C
25°C
−25°C
0°C
024681012 1614 18 20
4
2
0
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
f=1MHz
Fig.6 Capacitance between
terminals characteristics
P Type
N Type
BAV70 / BAW56 / BAV99
Diodes
3/3
0123456 87910
8
4
5
6
7
9
10
1
2
3
0
FORWARD CURRENT : I
F
(mA)
REVERSE RECOVERY TIME : t
rr (
ns)
V
R
=6V
Fig.7 Reverse recovery time
P Type
N Type
5Ω
50Ω
100ns
0.1IR
0
INPUT
OUTPUT
SAMPLING
OSCILLOSCOPE
PULSE GENERATOR
OUTPUT 50Ω
0.01µF D.U.T
t
rr
IR
Fig.8 Reverse recovery time (t
rr
) measurement circuit
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
