Insulated-Gate Bipolar Transistors 2N6975, 2N6976, 2N6977, 2N6978 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 5 A, 400 V and 500 V Veeton: 2 V Tr: 1 ws, 0.5 ps Features: = Low on-state voltage a Fast switching speeds a High input impedance Applications: a Power supplies a Motor drives wu Protection circuits The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode conductivity-modulated power field- effect transistors designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power inte- grated circuits. These types are supplied in the JEDEC TO-204AA steel package. MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): COLLECTOR-EMITTER VOLTAGE, Vees ....... 0 ccc cece cece rece COLLECTOR-GATE VOLTAGE (Ree = 1 MO), Vean ....-2 eee eee eee REVERSE COLLECTOR-EMITTER VOLTAGE, Vcestrevi ...-- GATE-EMITTER VOLTAGE, Vor .....-.-.ec cece eee eee eeee wee COLLECTOR CURRENT, RMS Continuous, Ie ............00 sees Pulsed, lomo... 0. see cece c cence cece eeeee POWER DISSIPATION @ Te = 25C, Pr... eee eee cece ees Derate above Tc = 25C 2... cece een eee OPERATING AND STORAGE TEMPERATURE, Ty, Taig *JEDEC registered value. Harris Semicond IGBT product is 4,364,073 4,417,385 4,430,792 4,443,931 4,587,713 4,618,872 4,620,211 4,631,564 4,644,637 4,882,195 4,684,413 4,717,679 4,809,045 4,810,665 7-62 File Number 2297 N-CHANNEL ENHANCEMENT MODE E 9268-43134 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE ) 92CS- 3780) JEDEC TO-204AA 2N6975 2N6976 2N6977 2N6978 400 500* Vv 400 500 Vv 5* _ Vv +20* V 5* A 10 A 100" W 0.8" WC -55 to +150* ae OF d by one or more of the following U.S. patents: 4,466,176 4,532,534 4,567,641 4,639,754 4,639,762 4,641,162 4,794,432 4,801,986 4,803,533Insulated-Gate Bipolar Transistors 2N6975, 2N6976, 2N6977, 2N6978 ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified LIMITS TEST 2N6975 2N6976 TI CHARACTERISTICS SYMBOL CONDITIONS 2N6977 2N6978 UNITS Min. Max. Min. Max. Collector-Emitter lo=1mA i * * Breakdown Voltage BYces Vee = 0 400 500 v Gate Threshold Voltage Voit Vee = Vee Qt 45 2 45 Vv Ie=1mA Vee = 400 V _ 250 _ _ Zero-Gate Voltage Collector Vee = 500 V _ = a 250 Current Ices Te = 125C _ _ _ _ uA Voce = 400 V _ 1000* _ _ Vor = 500 V _ 1000" Gate-Emitter Leakage Vee = +20 V . . Current Ioes Vee = 0 _ 100 _ 100 nA Reverse Collector-Emitter Ree = 02 * * Leakage Current Nees Vec=5V 8 5 mA Van =10 - 2" - 2" Collector-Emitter & Vv On Voltage VeEton le=10A _ 25 _ 25 Vee = 20V . . Gate-Emitter Plateau Ic=5A .4* .8* 4 8 Vv Voltage VeP Vee = 10 V 3.4 6.8 3 68 On-State Gate Ic=5A . " * * 25 Cc Charge Qaons Vce = 10 V v2 25 12 n Turn-On Delay Time teiont Ic=5A 50 max Rise Time t Veep) = 300 V 50 max Turn-Off Delay Time tatotn L=50yH 400 max * Fall Time ti Ts = 125C 2N6975 * ns Voe=10V | 2N6976 1000 max Re = 502 2N6977 * 2N6978 00 max Turn-Off Eott lc=5A Energy Loss Veep = 300 V | 2N6975 * 000 ma per Cycle L = 50 wH 2N6977 1 max (off switching dissipation Ty = 125C ud = Eon x frequency) Vor = 10 V 2N6976 * Rs=500 | 2Ne978 500 max Thermal Resistance 1.25* C/W Junction-to-Case Rac *JEDEC registered value. SINGLE PULSE D=0.05 D=0.2 0=0.5 ROIC()=r{)ROIC_D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT 1 T(GK)=TE=P(HKIROIC(Y) 10} NORMALIZED GATE THREHOLD VOLTAGE (IVGE(TH)1 JUNCTION TEMPERATURE (Tj)-degC GTHRCM10NSOAM1 Fig. 1 - Typical normalized gate threshold voltage as a function of junction temperature for all types. EFFECTIVE TRANSIENT THERMAL IMPEDANCE(NORMALIZED) r(t) 0.14 10 TIME(ms) 100 10 TRRCM1ONSOAMT 00 Fig. 2 - Normalized thermal response characteristics for all types. 7-63Insulated-Gate Bipolar Transistors 2N6975, 2N6976, 2N6977, 2N6978 t 10 T 5 = PULSE TEST Vgge= +10 To = 25C z PULSE DURATION = 808 Vgg=+8V 5 DUTY CYCLE =.5% MAX * Vge= +7 L 75 s a . = Vog = 10V Zz 2 & 3, | 5 z 9 2 S 125C S 3 P28" 8 8 25 3 E Pb aoe B -40C & wo (i z o 8 2.5 5 7.5 10 0 1 2 3 4 5 GATE-TO-EMITTER VOLTAGE (VGE) V COLLECTOR-TO-EMITTER VOLTAGE(VCE)V 92GS-44221 92GS8-44222 Fig. 3 - Typical transfer characteristics for all types. Fig. 4 - Typical saturation characteristics for all types. ciss coss CRss Vge=t0v PULSE TERT PULSE OURATION ' DUTY CYCLE 1229 = i % & l we on Cc o gc 4 / - a Ww 9 8 y 8 / 3 2 gE 2 if 7 15 25 COLLECTOR-TO-EMITTER ON VOLTAGE Nelon]-V COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V \VCE2NEQTSCF (CAPRCM1ONSOAM1 Fig. 5 - Typical collector-to-emitter on-voltage as a function of Fig. 6 - Capacitance as a function of collector-to-emitter voltage for collector current for ail types. all types. Eorr =f. Ic + Vce dt AL le f L=50uH nl. wr 1/Rg = 1/Agen + 1/Age prcennstenna ae ' t = Yeo ' 300 V : : ' ' L----P------.---. 9268-44223 92CS-30974R1 Fig. 7 - inductive switching test circuit. Fig. 8 - Typical inductive switching waveforms.Insulated-Gate Bipolar Transistors 2N6975, 2N6976, 2N6977, 2N6978 10 z 500 RL = 1002 Xx GATE \ ig (REF) = 0.43mA ' EMITTER Vog = 10 3 LL VOLTAGE de & 375 3 Voc =Vces z Vec= G g a cc=Vces 6 2 a # 250 = g s _ 0.75 VcEs 0.75 Ves: da 3 = 0.50 Voces 0.50 Voces @ 0.25 Voces -0-28 Voes & 125 2 z 2 3 COLLECTOR-EMITTER VOLTAGE t 4, 1 1 4. 1 1 Ig (REF) Ig (REF) TIME-MICROSECONDS ee COLLECTOR CURRENT ic) - Amps ig (ACN ino! 80 Ig (ACT) FREQQNGSTSCF3 B2GS. 44224 Fig. 9 - Maximum operating frequency vs collector current (typical). Fig. 10 - Normalized switching waveforms at constant gate current. (Refer to RCA application notes AN-7254 and AN7260.) 7-65