2N2946
A
Silicon PNP Transisto
r
Data Sheet
Description
• Screening and processing per MIL-PRF-19500 Appen di x E
• JAN level (2N2946AJ)
• JANTX level (2N2946AJX)
• JANTXV level (2N2946AJV)
• JANS level (2N2946AJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
www.SEMICOA.com or (714) 979-1900
Applications
• Gene ral pu rp ose
• Low po wer
• PNP silicon transistor
Features
• Hermetically sealed TO-46 metal can
• Also available in chip configuration
• Chi p ge ometry 1317
• Reference document :
MIL-PRF-19500/382
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 35 Volts
Emitter-Collector Voltage VECO 35 Volts
Collector-Base Voltage VCBO 40 Volts
Emitter-Base Voltage VEBO 40 Volts
Collector Current, Continuous IC100 mA
Power Dissipation, TC = 25°C PT400 mW
Thermal Resistance RθJA 435 °C/W
Operating Junction and Storage Temperature TJ & TSTG -65 to +200 °C
Rev. 4.0 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
Copyright© 2010
SEMICOA Corporaton offers:
Please contact SEMICOA for special configurations
www.SEMICOA.com
SEMICOA Corporation
2N2946
A
Silicon PNP Transisto
r
Data Sheet
Rev. 4.0 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 µA 35 Volts
Emitter-Collector Breakdown Voltag e V(BR)ECO IE = 10 µA, IB = 0 A 35 Volts
Collector-Base Cutoff Current ICBO1
ICBO2
ICBO3
VCB = 40 Volts
VCB = 32 Volts
VCB = 40 Volts, TA = 100°C
10
0.5
2.5
µA
nA
nA
Emitter-Base Cutoff Current IEBO1
IEBO2
IEBO3
VEB = 40 Volts
VEB = 32 Volts
VEB = 40 Volts, TA = 100°C
10
0.5
2.0
µA
nA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
Forwar d Current tran sfer ratio hFE1
hFE2
IC = 1.0 mA, VCE = 0.5 Volts
IC = 1.0 mA, VCE = 0.5 Volts,
TA = -55°C
50
20
Forward Current transfer ratio (inverted
connection)
hFE(inv)1
hFE(inv)2
IE = 200 µA, VEC = 0.5 Volts
IE = 200 µA, VEC = 0.5 Volts,
TA = -55°C
20
10
Emitter-Collector Offset Voltage VEC(ofs)1
VEC(ofs)2
VEC(ofs)3
IE = 0 A, IB = 200 µA
IE = 0 A, IB = 1.0 mA
IE = 0 A, IB = 2.0 mA
0.8
2.0
2.5 mVolts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude of Common-Emitter Small-
Signal Short-Circuit Forward-Current
Transfer Ratio |hFE| VCE = 6 Volts, IC = 1.0 mA,
f = 1 MHz 5 55
Open Circuit Output Capacitance COBO VCB = 6 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 10 pF
Open Circuit Inpu t Capacitance CIBO VEB = 6 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 6.0 pF
Small Signal Emitter-Collector On-
State Resistance rec(ON)1
IB = 100 µA, IE = 0 A,
Ie = 100 µA ac (rms)
f = 1 kHz 14
Ω
Small Signal Emitter-Collector On-
State Resistance rec(ON)2
IB = 1.0 mA, IE = 0 A,
Ie = 100 µA ac (rms)
f = 1 kHz 8
Ω
Switching Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Delay Time td 50 ns
Rise Time tr 100 ns
Storage Time ts 350 ns
Fall Time tf 100 ns
Copyright© 2010 SEMICOA Corporation
