TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP102 Rev. 1.1.0
December 2014
TIP102
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industr ial Use
• Complementary to TIP107
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions an d s tres si ng the parts to these lev el s i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP102 TIP102 TO-220 3L (Single Gauge) Bulk
TIP102TU TIP102 TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 8 A
ICP Collector Current (Pulse) 15 A
IBBase Current (DC) 1 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
R1 10kΩ≅
R2 0.6kΩ≅
Equivalent Circuit
B
E
C
R1 R2
TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP102 Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics(1)
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 80
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 30 mA, IB = 0 100 V
ICEO Collector Cut-Off Current VCE = 50 V, IB = 050μA
ICBO Collector Cut-Off Current VCB = 100 V, IE = 0 50 μA
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA
hFE DC Current Gain VCE = 4 V, IC = 3 A 1000 20000
VCE = 4 V, IC = 8 A 200
VCE(sat) Collector-Emitter Saturation Voltage IC = 3 A, IB = 6 mA 2.0 V
IC = 8 A, IB = 80 mA 2.5
VBE(on) Base-Emitter On Voltage VCE = 4 V, IC = 8 A 2.8 V
Cob Output Capacitance VCB = 10 V, IE = 0,
f = 0.1 MHz 200 pF
TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP102 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
012345
0
1
2
3
4
5
0.8mA
0.9mA
IB = 1mA
700
μ
A
600
μ
A
500
μ
A
400
μ
A
IB = 300μA
IB = 2 00 μA
IB = 100 μA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10
100
1k
10k
VCE = 4V
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
0.1 1 10 100
100
1k
10k
IC = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat) [mV], SATURATION VOLTAGE
IC[A], COL LECTOR CURRENT
0.1 1 10 100
1
10
100
1k
10k
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
0.01
0.1
1
10
100
TIP102
TIP101
5ms
100
μ
s
1ms
DC
TIP100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP102 Rev. 1.1.0 4
Physical Dimensions
Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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