fAMOSPEC COMPLEMENTARY SILICON POWER TRANSISTORS ...designed for use in general-purpose amplifier and switching applications FEATURES: * Power Dissipation - P, = 90W @ T, = 25C * DC Current Gain hFE = 20 ~ 100 @ 1, =4.0A * Voereay = 1-1 V (Max.) @ Ie = 4.0 A, I, = 400 mA MAXIMUM RATINGS NPN PNP TIP3055 TIP2955 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS TO-247(3P) Characteristic Symbol Rating Unit Collector-Emitter Voltage Veeo 60 Vv Collector-Emitter Voltage Voer 70 Vv Collector-Base Voltage Vege 100 Vv Emitter-Base Voltage Vepo 7.0 V Collector Current-Continuous lo 15 A Base Current is 7.0 A Total Power Dissipation @T,=25C Py 90 Ww Derate above 25C 0.72 wc Operating and Storage Junction Ty. Tst C Temperature Range - 65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rojec 1.39 CAN FIGURE -1 POWER DERATING Pp, POWER DiSSIPATION(WATTS) 125 150 0 25 50 75 100 To , TEMPERATURE(*?C) p--B__. vere SA AGU Wey PIN 1.BASE 2.COLLECTOR 3.EMITTER MILLIMETERS DIM MIN MAX A 20.63 | 22.38 B 15.38 | 16.20 Cc 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 | 12.84 G 4.20 450 H 1.82 2.46 | 2.92 3.23 J 0.89 1.53 K 5.26 5.66 L 1850 | 21.50 M 4.68 5.36 N 2.40 2.80 O 3.25 3.6 P 055 0.70ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) TIP3055 NPN / TIP2955 PNP Characteristic Symbol Max OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (lg = 30 mA, I, = 0) Vceoisus) Collector Cutoff Current ( Veg = 70 V, Reg = 100 ohm ) lcer 1.0 Collector Cutoff Current (Vog = 30 V, I, = 0) lcEo 0.7 Collector Cutoff Current ( Veg = 100 V, VeEjom = 15V) 5.0 Emitter Cutoff Current (Veg =7.0V,1,=0 ) 5.0 mA ON CHARACTERISTICS (1) DC Current Gain (le =4.0A, Veg = 4.0V) (Ig = 10A, Veg = 4.0V) hFE 20 5.0 100 Collector - Emitter Saturation Voltage (1, =4.0A, 1, =0.4A) (lp = 10A, 1p =3.3A) Voe(saty Base - Emitter On Voltage (1g=4.0A, Veg = 4.0V) Vee;on) 1.8 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (Ig = 500 mA, Veg = 10 V f= 1.0 MHz ) 2.5 MHz Small-Signal Current Gain (Ig = 1.0 A, Veg = 4.0 V, f = 1 KHZ) 15 (1) Pulse Test: Pulse width = 300 ps , Duty Cycle = 2.0% (2) f= | Mol F cotTIP3055 NPN / TIP2955 PNP a FIG-2 DC CURRENT GAIN hre , DC CURRENT GAIN - TIP2955 0.1 0.2 0.5 1.0 2.0 5.0 10 le , COLLECTOR CURRENT (AMP) FIG-3 ACTIVE-REGION SAFE OPERATING AREA There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-3 is base on T.=150 C;Tipig is variable depending on power level .second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature. T,=150C - Bonding Wire Limit - Second Breakdown Thermally Limited Ie , COLLECTOR CURRENT (Amp) | 2 5 10 20 50 100 Voe , COLLECTOR EMITTER VOLTAGE (VOLTS)