SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3035/3045CT
MBRB3035/3045CT
MBR3035/3045CT-1
Technical Data
Data Sheet 2916, Rev.C
MBR30…CT/MBRB30…CT/MBR30…CT-1
SCHOTTKY RECTIFIER
Applications:
•
••
• Switching power suppl y •
••
• Conve rt ers •
••
• Free-Wheeling diodes •
••
• Reverse battery protection
Features:
• 150 °
°°
°C TJ operation
• Cent e r tap conf iguration
• Low forwar d voltage dr op
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• Hig h fr e quenc y operation
• Guard ring for enhanced ruggedness and long term reliability
Mechanical Dimensions: In Inches / mm
TO-220AB
Case styles
MBR30…CT
TO-220AB
MBRB30…CT
D2PAK
MBR30…CT-1
TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3035/3045CT
MBRB3035/3045CT
MBR3035/3045CT-1
Data Sheet 2916, Rev. C D2PAK
10.16(0.400)
REF.
15.49(0.610)
14.73(0.580)
1.40(0.055)
1.14(0.045)
3
×
8.90(0.350)
8.50(0.335)
2
×
0.93(0.037)
0.69(0.027)
4.69(0.185)
4.20(0.165)
1.32(0.052)
1.22(0.048)
5.28(0.208)
4.78(0.188)
5.08(0.200)REF.
0.55(0.022)
0.46(0.018)
BASE
COMMON
CATHODE
ANODE 1 ANODE 2
CATHODE
COMMON
1.17(0.046)
1.37(0.054)
1.30(0.051)
1.70(0.067)
TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3035/3045CT
MBRB3035/3045CT
MBR3035/3045CT-1
Data Sheet 2916, Rev. C
Maximum Ratings:
Characteristics Symbol Condition Max. Units
35 MBR3035CT
MBRB3035CT
MBR3035CT-1
Peak Inverse Voltage
VRWM
-
45 MBR3045CT
MBRB3045CT
MBR3045CT-1
V
15(Per leg) Max. Average Forward IF(AV) 50% du t y cycle @T C = 123°C,
rectangular w av e form 30(Per Device) A
Max. Peak One Cycle Non-
Repetiti ve Surge Current
IFSM 8.3 ms, half Sin e puls e 240 A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop
(per leg) * VF1 @ 30A, Pulse, TJ = 25 °C
0.84
V
V
F2 @ 15A, Pu lse, TJ = 125 °C
@ 30A, Pulse, TJ = 125 °C 0.57
0.72 V
Max. Reverse Current
(per leg) * IR1 @VR = rated VR
TJ = 25 °C 1.0 mA
I
R2 @VR = rated VR
TJ = 100 °C 40 mA
Max. Junction Capacitance
(per leg) CT @VR = 4V, TC = 25 °C
fSIG = 1MHz 500 pF
Typica l Series Inductance
(per leg) LS Measured lead to lead 5 mm from
package body 8.0 nH
Max. Voltage Rate of Change dv/dt - 10,000 V/µs
* Pulse Width < 300µs, Duty Cycle <2%
Thermal -Mec hanic al Spe cif ica tions:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ - -55 to +150
°C
Max. Storage Temperature Tstg - -55 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC DC operation 1.6 °C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθJA DC operation 50 °C/W
Approximate Weight wt - 2 g
Mounting Torque TM - 6(Min.)
12(Max.) Kg-cm
Case Style TO-220AB D2PAK TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3035/3045CT
MBRB3035/3045CT
MBR3035/3045CT-1
Technical Data
Data Sheet 2916, Rev. C
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet (s) .
2- In cases where extremely high reliabil it y is required (such as use in nuclear power control, aerospac e and aviation, tr aff ic equi pm ent ,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users ’ f ail-s a fe precaut ions or other arrangem ent .
3- In no event shall Sensitr on Sem i conduc t or be liable for any damages that may result from an acci dent or any other cause during
operation of the user’s unit s acc ordi ng to the datas heet( s ). Sens i tr on Semi c onduc t or ass um es no respons i bil i ty for any intell ec tual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting
from us e at a value exceeding the absolute m aximum rat i ng.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) m ay not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permiss i on of
Sensit ron S em i conduc tor .
7- The products (tec hnolo gies) descr ibed in the datas heet( s) are not to be provided to any party whose purpose in their application will
hinder main tenanc e of int ernat ional peace and safet y nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (t echnologi es ), the nec ess ary procedures are to be taken in accor dance with related laws and
regulations.
