INCH-POUND | Lo f | The documentation and process conversion | measures necessary to comply with this | revision shalt be completed by 20 March 1995 \ MIL-S-19500/437C 20 December 1994 SUPERSEDING MIL-S-19500/437B 22 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES, 1N5578B-1, IN5578C~1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, N5518BUR-1, INSST8CUR-1, IN5518DUR-1 THROUGH 1N5546BUR-1, INSS46CUR-1, 1NS546DUR-1 JAN, JANTX, JANTXV, JANHC AND JANKC This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance is provided for each encapsulated device type as specified in MIL-S-19500, and two Levels of product assurance for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.4). 1.2 Physical dimensions. See figures 1 (00-7 and 00-35), 2 (DO0-213AA), and 3 (JANHC and JANKC). 1.3 Maximum ratings. Maximum ratings are shown in columns 3, 4, and 10 of table III herein and as follows: a. Py = 500 mW (00-7 and 00-35) at T, = +50c, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at L = .375 inch (9.53 mm). (Derate Iz to 0.0 mA de at +175C). b. Py = 500 mW (00-213AA) at Tec = +125C. (Derate to 0 at +175C). CG. ~65C $ Top = +175C; -65C S Teyq S +175C. 1.4 Primary electrical characteristics. Primary electrical characteristic columns 1, 6, 8, and 3 of table III herein and as follows: a 3.3 VdeSV, 5 33 Vdc. b. Roy, = 250C/W (maximum) at L = .375 inch (9.53 mm) (DO-? and 00-35). C. Regec = 100C/W (maximum) junction to endcaps (D0-273AA). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronic Supply Center, DESC-ELD, 1507 Wilmington Pike, Dayton, Ohio 45444-5270, by using the Standardization Document Improvement Proposal (0D Farm 1426) appearng at the end of this document or by letter. r AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. M@ 0000125 0034085 TT3 Ea reMIL-S-19500/437C ~ 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense Printing Service Detachment Office, Building 4D (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this decument takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated detail specification. The individual item requirements shalt be in accordance with MIL-S-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions shall be as specified in MIL-S-19500, UR... ae oe ee ee ews Unleaded or surface mounted diodes with round endcaps. TEC , eee ee se ee Temperature of endcap. Cr ke cee ee 2 percent voltage tolerance devices. Or. ee te 1 percent voltage tolerance devices. JANH 2 2 1 ww te ew ee . High reliability product assurance level for unencapsulated devices. JANK . 2. ee oe ew te Space reliability product assurance level for unencapsulated levices. 3.3 Design, construction, and physical dimensions. Design, construction, and physical dimensions shalt be as specified in MIL-$-19500, and on figures 1, 2, and 3 herein. 3.3.1 Lead finish. Lead finish shall be solderable as defined in MIL-S-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.3.2 Dash one construction. Dash one (-1) diodes shall be of metallurgically bonded double plug or Straight through construction in accordance with the requirements of category I, If, or III (see MIL-S-19500). 3.3.3 Package outlines. This specification contains two standard packages; DO-7 and 00-35. Any user of this specification that has a specific package outline requirement shall specify their preference in the acquisition order. If package style is not specified, the manufacturer may supply either package (see 6.2). M8 0000125 0036090 715 me NE EEE EE EEE EEE EEE EE EEEMIL-S-19500/437C ST op a SS deoak. ER Dimensions Ltr Notes Inches Millimeters | Min Max Min Max go 055 107 1.40 2.72 3 i .018 022 0.46 0.56 G -120 300 3.05 7.62 3 L 1.000 1.500 25.40 38.10 i) -050 1.27 4 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Package contour optional within gD and length G. Heat slugs, if any, shall be included within this cylinder but shall not be subject to minimum Limit of g@. 4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities other than heat slugs. 5. For DO-7 packages (see 3.4.1). FIGURE 1. Physicat dimensions types 1N55188-1, C-1, and 0-1 through 1N5546B-1, C-1, D-1 (DO-7 and 00-35). @@ ooooles 00360951 651 ane nace a atcMIL-S-19500/437C @D ey Fp 6, - peu 6 a Dimensions Ltr Inches Millimeters Min Max Min Max Lg@ -063 .067 1.60 1.70 F 016 022 0.41 0.56 G -130 2146 3.30 3.71 Gy -100 ref 2.54 ref s -001 min 0.03 min NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions 1N5518BUR-1, CUR-1, and DUR-1 through 1N5546BUR-1, CUR-1, DUR-1 (DO-213AA). m@ ooooies oO3b0%e 516 scar mm mac mmmmmmmmatar asaaaaamaaaaaaaaaaasaasaasaaaaaaaasaaaaasaaaaaaaasaaaaaaaaaaasaamasamaaamamamamaaaaasaaaaasaaaaaaaaaamasaaaaaamaaaamaaaaaaaaaaaaaaaaaaaaaaaiaadasaasaammasamammaaamaascsaaamcaaaacmmsmaacacccccsssccS5,<$S$-________,| ; J MIL-S-19500/437C ; > B Li BACKSIDE IS CATHODE JANHCA and JANKCA die JANHCB and JANKCB die ] dimensions dimensions Ltr Ltr Inches Millimeters Inches Millimeters | Min Max Min Max Min Max Min Max A 021 -025 0.53 0.64 A 024 028 0.61 | 0.71 8 013 017 0.33 0.43 B 017 021 0.43 | 0.53 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. The JANHCA and JANKCA die thickness is .010 inch (0.25 mm) +.002 inches (0.05 mm). Anode metallization: Al, thickness = 25,000 A minimum; cathode metallization: Thickness = 4,000 A minimum. 4. The JANHCB and JANKCB die thickness is .010 inch (0.25 mm) .002 inch (0.05 mm). Anode metallization: Al, thickness = 40,000 A minimum; cathode metallization: Au, thickness = 5,000 A minimum. 5. Circuit layout data: For zener operation, cathode must be operated positive with respect to anode. 6. Requirements in accordance with appendix H, are performed in a TO-5 package (see 6.4). FIGURE 3. Physical dimensions JANHC and JANKC die. M@ 0000125 0036093 424 S13 lala eaaaaaaaaaaaaaaaamaamaaaaaaaaaaaamaaaaa aa samamasaaaaaaamaaaaaaaaaaaaaaaaamaaaasaaaaaaaaaasaaaaaaaaacasaaaaaacaaaaaaaacaaacaaaaMIL-S-19500/437C 3.4 Marking. Marking shall be in accordance with MIL-S-19500. 3.4.1 DO-7 package. All DO-7 package devices shall be marked with a "D7" on the device within the Marking area. 3.4.2 Marking of U suffix devices. For U suffix (surface mount) devices only, all marking (except polarity) may be omitted from the body, but shall be retained on the initial container. 3.4.3 Marking of JANHC and JANKE die. For JANHC and JANKC die, the following marking shall be used (see MIL-S-19500), Example: JANHCAM1N55 18B-1 ttt | RHA level Source of manufacturer (see 6.4). L_.. Unencapsulated. Product assurance level 1/. 3.5 Selection of tight tolerance devices. The C and 0 suffix devices shall be selected from JAN, JANTX, or JANTXV devices which have successfully completed all applicable screening, and groups A, 8, and C testing as 5 percent tolerance devices. All sublots of C and D suffix devices shall pass group A, subgroup 2 at the tightened tolerances. The Ty or Tec for C and D suffix devices shail be maintained at 30 #2C for Vz correlation on tight tolerances. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein, except lot accumulation period shall be six months in lieu of six weeks. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-S-19500, and as specified herein. 4.2.1 Alternate qualification. For alternate qualification (see 4.4.1). 4.2.2 JANHC and JANKC devices. JANHC and JANKC devices shall be qualified in accordance with appendix H of MIL-S-19500. 4.2.3 Construction verification. Cross sectional photos from three devices shall be submitted in the qualification report. 1/ Two levels of product assurance levels are provided for unencapsulated devices, H and J (see MIL-S-19500. WE OoOo12s 0036094 3b0 a de rrr E___________________ a,MIL-S-19500/437C 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table II of MIL-S-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall mot be acceptable. Screen (see table [I Measurement of MIL-S- 19500) JANTX and JANTXV levels JAN level 3a Temperature cycling Temperature cycling in accordance with MIL-S-19500, JANTX Level. 3c V/ Thermal impedance (see 4.5.4) Thermal impedance (see 4.5.4) 9 Not applicable Not applicable 11 Ip and Vz Not applicable 12 See 4.3.2, t = 48 hours Not_applicable 13 2/ Alp, S 100 percent of initial reading or |Not applicable 10 nA de whichever is greater; AV S #2 percent of initial reading, subgroup 2 of table | herein. 1/ Thermal impedance may be performed any time after sealing provided temperature cycling is performed in accordance with MIL-S-19500, screen 3 prior to this thermal test. 2/ POA = 5 percent for screen 13, applies to dIpy, AVz. Thermal impedance (Zqjx) is not required in screen 13. 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-S-19500, appendix H. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: 174 = colum 10 of table IV minimum; mounting and test conditions in accordance with MIL-STD-750, method 1038, test condition B, TEC = +75C to +125C for surface mount devices. To better utilize burn-in equipment, higher values of Iz shall be permitted provided: a. The junction temperature does not exceed +175C. b. The power dissipation does not exceed 500 mm. 4.3.3 Alternate quality conformance inspection. Quality conformance inspection shall consist of the following requirements: a. Select devices which have passed the quality conformance requirements for JAN, JANTX, or JANTXV as specified in MIL-S-19500/117, MIL-S-19500/127, or MIL-S-19500/435. b. 100 percent test to the requirements of group A inspection, subgroups 2, 3, and 4. Any device not passing these tests may be returned to the original lot. c. Remark JAN, JANTX, or JANTXV (as applicable), 1N5518B through 1N5546B any devices passing the inspection of 4.2, retaining the original lot identification code. 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-S-19500, and as specified herein. Mm@ 0000125 0036055 277MIL-S-19500/437C 4.4.1 Alternate qualification requirements. Upon request, qualification will be granted to manufacturers qualified to MIL-S-19500/117, MIL-S-19500/127 or MIL-S-19500/435 provided that devices supplied to this specification are structurally identical and electrically similar (except for group A inspection, subgroups 2 and 3), to those supplied under MIL-S-19500/117, MIL-S-19500/127, or MIL-S-19500/435. A list of critical design features (DESC Form 36D) shall be submitted to the qualifying activity along with the request for QPL approval. In addition, group A variables data shall be submitted on 20 devices of the highest and lowest voltage types of each process variation (see 4.3.3). 4.4.2 Group A inspection. Group A inspection shail be conducted in accordance with MIL-S-19500 and table [ herein. 4.4.3 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables IIb (JANTXV and JANTX) of MIL-S-19500, and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table I, subgroup 2 herein. 4.4.3.1 Group 8 inspection, table IVb of MIL-S-19500. Subgroup Method Conditions 83 1027 Igy = column 10 of table ITT. 4.4.4 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table I, subgroup 2 herein. 4.4.4.1 Group C inspection, table V of MIL-S-19500. Subgroup Method Conditions c2 2036 Test condition A; 4 pounds; t = 15 seconds. Not applicable to U suffix devices. 2036 Test condition E, (not applicable for "U" suffix devices). c 1026 Iz = column 10 of table IIl. c7 6071 lz = colum 11 of table III, Ty = #25C #5C, Tp = +125C 5C, Vz = colum 8 of table III, sampling plan = 22 devices, c = 0. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Surge current (lzgy). The peak currents shown in column 4 of table III shall be applied in the reverse direction and these shall be superimposed on the current (1, = column 11 of table III) a total of 5 surges at 1 minute intervals. Each individual surge shall be one-half square-wave-pulse of -83 second duration or an equivalent one-half sinewave with the same effective rms current. 4.5.2 Regulator voltage measurements. The test current shall be applied until thermal equilibrium is attained (20 #2 seconds) prior to reading the breakdown voltage. For this test, the diode shall be suspended by its leads with mounting clips whose inside edge is located at .375 inch (9.53 mm) from the body and the mounting clips shall be maintained at a temperature of *25C +8C, -2C. This measurement may be performed after a shorter time following application of the test current than that which provides thermal equilibrium if correlation to stabilized readings can be established to the satisfaction of the Government. 4.5.3 Temperature coefficient of regulator voltage (Vz). The device shall be temperature stabilized with current applied prior to reading regulator voltage at the specified ambient temperature as specified in 4.4.4.1, group C, subgroup 7. M8 0000125 0036056 133MIL-S-19500/437C 4.5.4 Thermal impedance (2g), measurements). The %yjy measurements shall be performed im accordance with MIL-STD-750, method 3101. The maximum limit for Zqjy in screening (table II of MIL-S-19500) shail be derived by each vendor by means of process control. a. Iw measurement current . 2... 2 2 2 ee ee ee ee 1 mA to 10 mA. b. Iy forward heating current... 2... + 22-2 ee - 500 mA to 1.0 A. c. ty heating time ......-.-.- Lee ee eee 10 ms. d. typ measurement delay time... 2... 5... ce ee 70 ps maximum, 4.5.4.1 For initial qualification or requalification. Read and record data (Zqjy) shall be supplied to the qualifying activity on one lot (random sample of 500 devices minimum). Twenty-two serialized devices shall be sent to the qualifying activity for test correlation. 4.5.5 Thermal resistance. Thermal resistance measurement shall be in accordance with MIL-STD-750, method 3101 or 4081. Forced moving air or draft shall not be permitted across the device during test. The maximum limit for Roy, under these test conditions shall be Raj, (maximum) = 250C/W. The following conditions shall apply when using method 3101: a. Iq ee eee ee er 1 mA to 10 mA. b. lye ee ee ee ee ee ee ee eee ee 200 mA to 400 m. Ch tye ee ee ee ee 25 seconds minimum. Gd. typ 2 2 ee ee ee eet eee ew ee we wee 70 us maximum, LS = Lead spacing = .375 inch (9.53 mm) as defined on figure 4 below, 0 inch (0.00 mm) lead spacing for surface mount devices. COPPER LEAD CLAMP COPPER LEAD CLAMP WU INFINITE HEAT-DISSIPATOR FIGURE 4, Mounting conditions. 4.5.5.1 For initial qualifications and requalifications. Read and record data in accordance with group E herein and shalt be included in the qualification report. 4.5.6 Decap internal visual scribe and break. Scratch glass at cavity area with diamond scribe. Carefully snap open. Using 30X magnification examine the area where die (or bonding material) are in contact with the plugs, verify metallurgical bonding area. If the verification of the metallurgical bonding area is in question, the test method 3101 and test condition limits herein Zgjy shall be used to determine suitability for use. @@ 0000125 003609? O7T isi isis lacs... CSc. aca ilasamaamasamaaa sama aaa sama amaaaaccaaaacacaaacammcaMIL-S-19500/437 4.5.7 Noise density. Noise density shali be measured using a noise density test circuit as shown on figure 5. Place a low-noise resistor, equivalent in value to the dynamic impedance of the diode under test, in the test clips and adjust test current (Iz7) and measure output- noise voltage. Remove resistor, insert diode under test in test clips, readjust test current to 250 yA de and measure output-noise voltage again. To obtain noise density (Np), subtract rms resistor output-noise voltage from rms diode output-noise voltage and divide by product of overall system gain and square root of bandwidth. All measurements shall be made at +*25C. : e RESISTOR +o (23) AWA 51 kn } BANDPASS } FILTER OC POWER 1 Vy TLTE Your TRUE RMS SUPPLY bu fo = 2 kHz ou VOLTMETER t 3 db BW = 2 kHz | -o NOTES: 1. Input voltage and lead resistance should be high so that zener can be driven from a constant current source. 2. Input impedance of band pass filter should be high compared with the dynamic impedance of the diode under test. 3. Filter bandwidth characteristics shall be as follows: fo = 2,000 Hz Shape factor, -40 db to -3 db, approximately 2. Passband at the -3 db is 1,000 Hz +50 Hz to 3,000 Hz #150 Hz. Passband at the -40 db is 500 Hz +50 Hz to 6,000 Hz 2600 Hz. FIGURE 5. Circuit for determination of noise density. 4.5.8 Regulation factor. Breakdown voltage shall be measured at a low current, Iz, as shown in column 13 of table III. This voltage shall be subtracted from the breakdown voltage measured at Iz in column 11 of table III. The difference is the regulation factor (AVz) and shall be less than the maximum value shown in column 12 of table III. 10 MH OoooLeS 0036055 TOL a seen ere aaa amma smamaammmammmamamaaaaaaaaamaadaaaaaaaamaaaalagamamasaaaaamamaasacaaaaaaaaaaaaacaamaaaaaasadaamamaamasaaaaaaas elas aaaasaaaaaaaaamaaaaaaaaaaaaaaaamamamaaaaaaaaaaaaaaaaaaaaaaaasaaaaaaaaaaaaaaaasaaaaaaaaaaaaaaasascacaaadaaaaseaaaaaaammaaassaasaaaaassaasacasamsssccsssccccscccccccscccsssssccssMIL-S-19500/437C TABLE I. Group A_inspection. 2/ Inspection 1/ MIL-STD-750 Symbo| Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical 2071, - examination Subgroup 2 Forward voltage 4011 fp = 200 mA de Ve 1.1 Vv de Reverse current 4016 DC method; Vp = column 5 Ip4 Column HA de of table III 6 Regulator voltage 4022 Iz = column 11 of table Vz Column = |Column V de (see 4.5.2) Il 1 1 V2 tol +V2 tol Regulation factor Iz = column 11, and AVz Colum V de (see 4.5.8) Iz, = column 13 of table 12 111 Thermal impedance 3101 See 4.5.5 ZQ3% 35 C/W Subgroup 3 High-temperature Ta = +150C operation: Reverse current 4016 DC method: Vp = column 5 Ip2 Column | pA de of table II! 2 Subgroup 4 Small-signal reverse 4051 Iz = column 11 22T Column ohms breakdown impedance Isgtg = 10 percent of Iz 3 Noise density Iz = 250 pA de Np Colum | pv/i Hz (see 4.5.7) 9 Subgroups 5, 6, and 7 Not applicable i/ For sampling plan, see MIL-S-19500. 2/ Column references are to table III herein. 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MIL-STD-750 Qualification Inspection I1/ conformance Method Conditions inspection Subgroup 1 Temperature cycling 1051 500 cycles 22 devices, c = 0 Electrical measurements See table I, subgroup 2 Subgroup 2 Intermittent operation 1037 6,000 cyctes 22 devices, c = 0 life Electrical measurements See table I, subgroup 2 Subgroup 3 Not applicable Subgroup 4 22 devices, c = 0 Thermal resistance 3101 See 4.5.5 unleaded or surface or mount 4081 Thermal resistance 3101 See 4.5.5 leaded only or 4081 1/ A separate sample may be pulled for each test. v2 ~ MM! 0000125 0036100 494 OEE eo RE("29ueJ9}03 yUadvad | F ase L-GQLSGNL Pue JUa.VEd ZF ase |-IBLGGNL "JUBIIEd GF ase |-GBLSSN :Se)dwexa) seoiasp aouesa}o} a6e2}0q /T 100 0s*0 OL ral 0S 260 + s00 L0O 262 26t OL QsS OSE| L-89SSNL Lo0 S70 ob gt SY 160+ so0 1000 022 92 ool 0sS OOE) b-PS9SSNL to"o 090 oF a 0 160+ S00 too 2S2 0% OOL 0sS 082| L-899SSNL too st"0 orl st ct 60+ g00 L00O 922 092 oot os OS2| b-8&7SSNL t00 aLo 04 9L o 880+ so*0 t0"0 Le ble OOL 0s 042; L-B29SSNb toO se0 OL dt Se 280+ s00 t00 gl G62 04 0s O22] b-SLYSSNL LoO 020 Ok 6L 02 980"+ 500 L00 osL See ool 0s 002] -L-80%SSNL Lo0o 020 ovL 02 02 980 + so0 Lo"o 2b eve OOL os O6L| L-S6ESSNL Lo"0o 020 OTL Le 02 S80+ s0O L0O 2oL Lge oOoL os OSt} --S8ESsNL 100 020 01 22 02 S80" + 500 Lo"0 est | zag ool | o7s OZL| L-BZESGNL 100 0z"0 ort 92 02 80"+ S0-0 L070 ao. | 909 001 | avs O9L| b-89ESSNL 100 020 o"L Gz 0z 280 + so"0 Lo0 s'est | gey 001 | ovs OSL] --SSESSNL 100 020 0L 22 02 Z80+ so"0 Lo"0 92 | 99% ool | ors OYL| b-BYESSNE too o20 orl 62 SL 80+ soo boO Z27bb 00s 06 os OSt] L-SELSSNL " 5 100 0z0 o"b ze ol g0+ 0 S00 e701 | os 06 0s o2t] b-8zEssnt * to0 o20 OTL st os SL0+ s"0 s00 6'6 06S 08 0sS OLE] L-8ESSSNL eS 1090 oLo ha SE 0 SZ0+ s"0 s00 L6 0s9 09 o"s OOt| b-SOESSNL ge too so0 Orb ey 0F 890 + o1 L0 23 0S9 SY 0s L6 bL-S62SSNL % to0 $00 OL 99 Oo" 290 + orb $0 S2 os9 ov os 28 L-S82SSNL = to0 s00 O"L LS ore gso+ ovt s0 89 0s? 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