© 2003 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 44N50 44 A
48N50 48 A
IDM TC= 25°C, pulse width limited by TJM 44N50 176 A
48N50 192 A
IAR TC= 25°C48A
EAR TC= 25°C60mJ
EAS TC= 25°C 2.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 15 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 500 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 300 °C
MdMounting torque TO-264 0.4/6 Nm/lb.in.
Weight PLUS 247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250uA 500 V
VGS(th) VDS = VGS, ID = 4mA 2.0 4.0 V
IGSS VGS = ±20 V, VDS = 0 ±100 nA
IDSS VDS = VDSS 100 µA
VGS = 0 V TJ = 125°C 2 mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 44N50 120 mΩ
Note 1 48N50 100 mΩ
DS98612D(08/03)
PLUS 247TM (IXFX)
GD
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
S
G
D(TAB)
TO-264 AA (IXFK)
HiPerFETTM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
High dV/dt, Low trr
Features
zIXYS advanced low Qg process
zLow gate charge and capacitances
- easier to drive
- faster switching
zInternational standard packages
zLow RDS (on)
zRated for unclamped Inductive load
switching (UIS) rated
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
z Temperature and lighting controls
Advantages
zPLUS 247TM package for clip or spring
mounting
zSpace savings
zHigh power density
VDSS ID25 RDS(on)
IXFK/IXFX 48N50Q 500 V 48 A 100 mΩΩ
ΩΩ
Ω
IXFK/IXFX 44N50Q 500 V 44 A 120 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 30 42 S
Ciss 7000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 960 pF
Crss 230 pF
td(on) 33 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 22 ns
td(off) RG = 1 Ω (External), 75 n s
tf10 ns
Qg(on) 190 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 40 nC
Qgd 86 nC
RthJC 0.26 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 48 A
ISM Repetitive; 192 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr 250 ns
QRM 1.0 µC
IRM 10 A
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM Outline
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFK/IXFX 48N50Q
IXFK/IXFX 44N50Q
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
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© 2003 IXYS All rights reserved
IXFK/IXFX 48N50Q
IXFK/IXFX 44N50Q
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
30
60
90
120
02468101214161820
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
6
12
18
24
30
36
42
48
0 2 4 6 8 10 12 14 16
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
6
12
18
24
30
36
42
48
0123 45678
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on)
Norm alized to I
D25
V
alue vs.
Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S (on)
- Normalize
d
I
D
= 48A
I
D
= 24A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
6
12
18
24
30
36
42
48
54
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Norm alized to I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0 1224364860728496108120
I
D
- Amperes
R
D S (on)
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFK/IXFX 48N50Q
IXFK/IXFX 44N50Q
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - pF
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 250V
I
D
= 24A
I
G
= 10mA
Fig. 7. Input Admittance
0
6
12
18
24
30
36
42
48
54
60
3.5 4 4.5 5 5.5 6 6.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 12. Maxim um Transient Therm al
Resistance
0.01
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
Fig. 8. Trans conductance
0
10
20
30
40
50
60
70
80
0 6 12 18 24 30 36 42 48 54 60
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs. Source-To-
Drain Voltage
0
10
20
30
40
50
60
70
80
90
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
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