MBR2045CTG, MBRF2045CTG Switch-mode Power Rectifier Features and Benefits * * * * * * www.onsemi.com Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) These Devices are Pb-Free and are RoHS Compliant SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS 1 Applications * Power Supply - Output Rectification * Power Management * Instrumentation 2, 4 3 4 Mechanical Characteristics * * * * * * Case: Epoxy, Molded Epoxy Meets UL 94, V-0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C 1 1 2 3 TO-220AB CASE 221A STYLE 6 2 3 TO-220 FULLPAK] CASE 221AH DEVICE MARKING INFORMATION See general marking information in the device marking section on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. (c) Semiconductor Components Industries, LLC, 2016 July, 2016 - Rev. 12 1 Publication Order Number: MBR2045CT/D MBR2045CTG, MBRF2045CTG AYWW MBR2045CTG AKA AYWW B2045G AKA TO-220AB TO-220 FULLPAK A Y WW G AKA = Assembly Location = Year = Work Week = Pb-Free Package = Diode Polarity Figure 1. Marking Diagrams MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current Per Device Per Diode (TC = 165C) IF(AV) Peak Repetitive Forward Current per Diode Leg (Square Wave, 20 kHz, TC = 163C) IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) See Figure 13 IRRM 1.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature (Note 1) TJ -65 to +175 C dv/dt 10,000 V/ms A 20 10 Voltage Rate of Change (Rated VR) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance (MBR2045CTG) (MBRF2045CTG) Symbol Value RqJC RqJA RqJC RqJA 2.0 60 4.75 75 Unit C/W - Junction-to-Case - Junction-to-Ambient - Junction-to-Case - Junction-to-Ambient www.onsemi.com 2 MBR2045CTG, MBRF2045CTG ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 2) (iF = 10 A, TJ = 125C) (iF = 20 A, TJ = 125C) (iF = 20 A, TJ = 25C) vF Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Min Typ Max - - - 0.50 0.67 0.71 0.57 0.72 0.84 - - 10.4 0.02 15 0.1 Unit V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. ORDERING INFORMATION Package Type Shipping MBR2045CTG TO-220 (Pb-Free) 50 Units / Rail MBRF2045CTG TO-220FP (Pb-Free) 50 Units / Rail Device Order Number 100 100 70 70 50 50 30 30 10 7.0 5.0 125C 25C 3.0 2.0 1.0 25C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.1 0.0 125C 20 TJ = 150C iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 20 TJ = 150C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 3 1.4 MBR2045CTG, MBRF2045CTG 100 100 TJ = 150C 10 125C 1.0 100C 0.1 0.01 25C 0.001 0.0001 125C 10 IR , REVERSE CURRENT (mA) IR , REVERSE CURRENT (mA) TJ = 150C 100C 1.0 75C 0.1 25C 0.01 0.001 0 10 5.0 15 20 25 30 35 40 45 50 0 10 5.0 15 VR, REVERSE VOLTAGE (VOLTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IFSM , PEAK HALF-WAVE CURRENT (AMPS) 100 70 50 30 20 5.0 7.0 10 3.0 20 30 50 70 100 PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE 12 10 8.0 dc 6.0 4.0 2.0 0 0 25 50 75 100 125 50 14 12 10 SQUARE WAVE 8.0 6.0 4.0 2.0 0 140 145 150 155 160 165 170 175 180 Figure 6. Current Derating, Case, Per Leg RqJA = 16C/W (With TO-220 Heat Sink) RqJA = 60C/W (No Heat Sink) 14 45 TC, CASE TEMPERATURE (C) 20 16 40 dc Figure 5. Maximum Surge Capability dc 35 18 16 NUMBER OF CYCLES AT 60 Hz 18 30 Figure 4. Maximum Reverse Current 200 2.0 25 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current 1.0 20 150 175 TA, AMBIENT TEMPERATURE (C) 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 TJ = 175C SQUARE WAVE 0 Figure 7. Current Derating, Ambient, Per Leg 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 8. Forward Power Dissipation www.onsemi.com 4 dc r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBR2045CTG, MBRF2045CTG 1.0 0.7 0.5 0.3 0.2 Ppk Ppk tp 0.1 0.07 0.05 TIME t1 DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. DTJL = Ppk * RqJL [D + (1 - D) * r(t1 + tp) + r(tp) - r(t1)] where: DTJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp, etc. 0.03 0.02 0.01 0.01 0.1 1.0 10 t, TIME (ms) 100 1000 R(t), TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response for MBR2045CT 100 10 D = 0.5 0.2 0.1 0.05 0.02 1.0 0.01 0.1 P(pk) 0.01 t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 10. Thermal Response Junction-to-Ambient for MBRF2045CT 10 D = 0.5 1.0 0.1 0.2 0.1 0.05 0.02 0.01 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1.0 10 t1, TIME (sec) Figure 11. Thermal Response Junction-to-Case for MBRF2045CT www.onsemi.com 5 100 1000 MBR2045CTG, MBRF2045CTG HIGH FREQUENCY OPERATION 1000 Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 12.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. 900 C, CAPACITANCE (pF) 800 700 600 500 400 300 200 100 0 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 12. Typical Capacitance +150 V, 10 mAdc 2.0 kW VCC 12 V TJ = 25C f = 1 MHz 12 Vdc D.U.T. 100 + 2N2222 2.0 ms 1.0 kHz CURRENT AMPLITUDE ADJUST 0-10 AMPS 2N6277 100 CARBON 1.0 CARBON 1N5817 Figure 13. Test Circuit for dv/dt and Reverse Surge Current www.onsemi.com 6 4.0 mF 50 MBR2045CTG, MBRF2045CTG PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AH -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. www.onsemi.com 7 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR2045CTG, MBRF2045CTG PACKAGE DIMENSIONS TO-220 FULLPACK, 3-LEAD CASE 221AH ISSUE F A B E A P E/2 0.14 Q D M B A H1 M A1 C NOTE 3 1 2 3 L L1 3X 3X SEATING PLANE c b b2 0.25 M B A M C A2 e SIDE VIEW FRONT VIEW SECTION D-D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.60 7.10 12.50 14.73 --2.80 3.00 3.40 2.80 3.20 A NOTE 6 NOTE 6 H1 D D A SECTION A-A ALTERNATE CONSTRUCTION FULLPAK is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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