S E M I C O N D U C T O R CD4041UBMS CMOS Quad True/Complement Buffer December 1992 Features Pinout CD4041UBMS TOP VIEW * High Voltage Type (20V Rating) * Balanced Sink and Source Current; Approximately 4 Times Standard "B" Drive E=A 1 14 VDD * Equalized Delay to True and Complement Outputs F=A 2 13 D * 100% Tested for Quiescent Current at 20V * Maximum Input Current of 1A at 18V Over Full Package-Temperature Range; - 100nA at 18V and +25oC A 3 12 N = D G=B 4 11 M = D H=B 5 10 C B 6 9 L=C VSS 7 8 K=C * 5V, 10V and 15V Parametric Ratings * Meets All Requirements of JEDEC Tentative Standard No. 13B, "Standard Specificationsfor Description of `B' Series CMOS Devices" Functional Diagram Applications 3 * High Current Source/Sink Driver 1 A E * CMOS-to-DTL/TTL Converter Buffer E=A 2 F * Display Driver F=A 6 * MOS Clock Driver 4 B G * Resistor Network Driver (Ladder or Weighted R) G=B 5 H * Buffer H=B * Transmission Line Driver 10 8 C K Description K=C CD4041UBMS types are quad true/complement buffers consisting of n- and p- channel units having low channel resistance and high current (sourcing and sinking) capability. The CD4041UBMS is intended for use as a buffer, line driver, or CMOS-to-TTL driver. It can be used as an ultra-low power resistor-network driver for A/D and D/A conversion, as a transmission-line driver, and in other applications where high noise immunity and low power dissipation are primary design requirements. L=C 9 L The CD4041UBMS is supplied in these 14 lead outline packages: Braze Seal DIP H4Q Frit Seal DIP H1B Ceramic Flatpack H3W 13 11 M D M=D VSS = 7 VDD = 14 12 N N=D VDD VDD VDD TRUE OUTPUT INPUT* VSS VSS VSS VSS VDD P *ALL INPUTS PROTECTED BY CMOS INPUT PROTECTION NETWORK COMPLEMENT OUTPUT N VDD VSS FIGURE 1. SCHEMATIC DIAGRAM 1 OF 4 BUFFERS CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright (c) Harris Corporation 1992 7-861 File Number 3309 Specifications CD4041UBMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 GROUP A SUBGROUPS LIMITS TEMPERATURE MIN +25 C - 2 A +125oC - 200 A 3 -55oC - 2 A o 1 +25 C -100 - nA 2 +125oC -1000 - nA 3 -55oC -100 - nA 1 +25oC - 100 nA 2 +125oC - 1000 nA - 100 nA - 50 mV - V 3 Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V UNITS 2 -55oC VDD = 18V MAX 1 o 1 +25oC 1.6 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 5.0 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 19 - mA 1 +25oC - -1.6 mA 1 +25oC - -6.4 mA Output Current (Source) Output Current (Source) IOH5A IOH5B VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -5.0 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -19 mA N Threshold Voltage VNTH VDD = 10V, ISS = -10A 1 +25oC -2.8 -0.7 V 1 +25oC 0.7 2.8 V VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC P Threshold Voltage Functional VPTH F VSS = 0V, IDD = 10A VOH > VOL < VDD/2 VDD/2 V Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.0 V Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 4.0 - V Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 2.5 V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 12.5 - V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 7-862 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. Specifications CD4041UBMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Transition Time SYMBOL TPHL TPLH CONDITIONS (NOTE 1, 2) GROUP A SUBGROUPS TEMPERATURE VDD = 5V, VIN = VDD or GND 9 10, 11 TTHL TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC +25oC +125oC, -55oC LIMITS MIN MAX UNITS - 120 ns - 162 ns - 80 ns - 108 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS NOTES VDD = 5V, VIN = VDD or GND 1, 2 TEMPERATURE MIN MAX UNITS - 1 A +125 C - 30 A -55oC, +25oC - 2 A - 60 A -55oC, +25oC o VDD = 10V, VIN = VDD or GND 1, 2 oC +125 VDD = 15V, VIN = VDD or GND 1, 2 - 2 A +125oC - 120 A -55oC, +25oC Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC 9.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 1.2 - mA -55oC 2.1 - mA Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Input Voltage Low IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VIL VDD = 10V, VOUT = 0.5V 1, 2 VDD = 15V, VOUT = 1.5V 1, 2 VDD = 5V, VOUT = 4.6V 1, 2 VDD = 5V, VOUT = 2.5V 1, 2 VDD = 10V, VOUT = 9.5V 1, 2 VDD =15V, VOUT = 13.5V VDD = 10V, VOH > 9V, VOL < 1V 1, 2 1, 2 o +125 C 3.5 - mA -55oC 6.25 - mA +125oC 13 - mA -55oC 24 - mA +125oC - -1.2 mA -55oC - -2.1 mA +125oC - -4.6 mA -55oC - -8.4 mA +125oC - -3.5 mA -55oC - -6.25 mA +125oC - -13 mA -55oC - -24 mA +25oC, +125oC, - 2 V -55oC Input Voltage High VIH Propagation Delay TPHL TPLH VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V VDD = 15V 7-863 1, 2 +25oC, +125oC, -55oC 8 - V 1, 2, 3 +25oC - 70 ns 1, 2, 3 +25oC - 50 ns Specifications CD4041UBMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL Transition Time TTHL TTLH Input Capacitance CONDITIONS VDD = 10V VDD = 15V CIN Any Input NOTES TEMPERATURE MIN MAX UNITS 1, 2, 3 +25oC - 40 ns o 1, 2, 3 +25 C - 30 ns 1, 2 +25oC - 22.5 pF NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Supply Current IDD N Threshold Voltage VNTH N Threshold Voltage Delta VTN P Threshold Voltage VTP P Threshold Voltage Delta VTP Functional F CONDITIONS NOTES TEMPERATURE UNITS +25 C - 7.5 A 1, 4 +25oC -2.8 -0.2 V VDD = 10V, ISS = -10A 1, 4 +25oC - 1 V VSS = 0V, IDD = 10A 1, 4 +25oC 0.2 2.8 V 1, 4 +25oC - 1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VDD = 18V, VIN = VDD or GND TPHL TPLH MAX 1, 4 VDD = 20V, VIN = VDD or GND o VDD = 3V, VIN = VDD or GND Propagation Delay Time MIN VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-1 IDD 0.2A Output Current (Sink) IOL5 20% x Pre-Test Reading IOH5A 20% x Pre-Test Reading Output Current (Source) TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A 100% 5004 1, 7, 9, Deltas 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 CONFORMANCE GROUP PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A 7-864 READ AND RECORD IDD, IOL5, IOH5A Specifications CD4041UBMS TABLE 6. APPLICABLE SUBGROUPS (Continued) MIL-STD-883 METHOD GROUP A SUBGROUPS Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 CONFORMANCE GROUP Group B Group D READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9, Deltas Table 4 Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 1, 2, 4, 5, 8, 9, 11, (Note 1) 12 3, 6, 7, 10, 13 14 Static Burn-In 2 1, 2, 4, 5, 8, 9, 11, (Note 1) 12 7 3, 6, 10, 13, 14 Dynamic BurnIn (Note 2) - 7 14 1, 2, 4, 5, 8, 9, 11, 12 7 3, 6, 10, 13, 14 Irradiation (Note 3) 9V -0.5V 50kHz 1, 2, 4, 5, 8, 9, 11, 12 3, 6, 10, 13 25kHz NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K 5%, VDD = 18V 0.5V 2. Each pin except VDD and GND will have a series resistor of 4.75K 5%; VDD = 18V 0.5V 3. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V 0.5V Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC 70 OUTPUT LOW CURRENT (IOL) (mA) OUTPUT LOW CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = 15V 60 50 10V 40 30 20 5V 10 70 60 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 50 40 30 10V 20 10 5V 0 1 2 3 4 5 6 7 8 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 0 FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 1 2 3 4 5 6 7 8 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 3. MINIMUM LOW (SINK) CURRENT CHARACTERISTICS 7-865 Specifications CD4041UBMS Typical Performance Characteristics DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -6 -4 -2 -8 -7 -5 -3 0 AMBIENT TEMPERATURE (TA) = +25oC -10 -20 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -30 -40 -50 -10V -60 -15V -70 -20 -10V -60 AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (tTLH, tTHL) (ns) PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC 60 50 30 -70 FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS SUPPLY VOLTAGE (VDD) = 5V 15V -40 -50 80 10V -30 -15V AMBIENT TEMPERATURE (TA) = +25oC 40 0 -10 GATE-TO-SOURCE VOLTAGE (VGS) = -5V FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 70 -1 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -1 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -6 -4 -2 -8 -7 -5 -3 (Continued) 20 70 60 SUPPLY VOLTAGE (VDD) = 5V 50 40 30 10V 20 10 15V 10 0 10 20 30 50 70 40 60 80 LOAD CAPACITANCE (CL) (pF) 90 100 FIGURE 6. TYPICAL PROPAGATION DELAY TIME vs LOAD CAPACITANCE 0 10 20 30 50 70 40 60 80 LOAD CAPACITANCE (CL) (pF) 90 100 FIGURE 7. TYPICAL TRANSITION TIME vs LOAD CAPACITANCE AMBIENT TEMPERATURE (TA) = +25oC 12 VI OUTPUT VOLTAGE (VO) (V) OUTPUT VOLTAGE (VO) (V) 14 VO VDD = 10V 10 AMBIENT TEMP (TA) = +25oC 8 6 VDD = 5V VDD = 3V 4 2 VI SUPPLY VOLTAGE (VDD) = 15V VO 15.0 12.5 10V 10.0 7.5 5V 5.0 2.5 0 2 4 6 8 10 12 14 INPUT VOLTAGE (VI) (V) 16 0 18 2.5 5.0 7.5 10 12.5 15 INPUT VOLTAGE (VI) (V) FIGURE 8. MINIMUM AND MAXIMUM TRANSFER CHARACTERISTICS - TRUE OUTPUT FIGURE 9. MINIMUM AND MAXIMUM TRANSFER CHARACTERISTICS - COMPLEMENT OUTPUT 7-866 CD4041UBMS Typical Performance Characteristics (Continued) 8 6 4 2 105 8 6 4 8 6 4 2 1kHz AT 15V 100kHz AT 15V 2 104 8 6 4 100kHz AT 5V 10kHz AT 15V 2 103 8 6 4 2 102 8 6 4 10kHz AT 5V 2 10 8 6 4 1kHz AT 5V 10 VDD = 15V 104 10V 8 6 4 2 103 8 6 4 2 5V 5V 3V 102 8 6 4 2 101 8 6 4 2 2 2 AMBIENT TEMPERATURE (TA) = +25oC INPUT tr = tp = 20ns 105 AMBIENT TEMPERATURE (TA) = +25oC POWER DISSIPATION (PD) (W) (PER OUTPUT PAIR) POWER DISSIPATION PER OUTPUT PAIR (PD) (W) 4 2 4 68 2 4 68 2 4 68 2 4 68 2 4 68 2 102 103 104 105 106 4 68 107 INPUT RISE AND FALL TIME (tr, tf) (ns) CL = 15pF CL = 50pF 2 4 68 103 FIGURE 10. TYPICAL POWER DISSIPATION vs INPUT RISE AND FALL TIME PER OUTPUT PAIR 2 4 68 2 4 68 2 104 105 106 FREQUENCY (f) (Hz) 4 68 107 FIGURE 11. TYPICAL POWER DISSIPATION vs FREQUENCY PER OUTPUT PAIR Chip Dimensions and Pad Layout 8 7 6 9 5 10 METALLIZATION: Thickness: 11kA - 14kA, 4 AL. PASSIVATION: 10.4kA - 15.6kA, Silane BOND PADS: 0.004 inches X 0.004 inches MIN 11 DIE THICKNESS: 3 12 2 13 14 1 Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch) 7-867 0.0198 inches - 0.0218 inches DIE SIZE: X = 72 (69 - 77) Y = 82 (79 - 87)