Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 6
1Publication Order Number:
MBRS540T3/D
MBRS540T3G,
NRVBS540T3G
Surface Mount
Schottky Power Rectifier
The MBRS540T3 employs the Schottky Barrier principle in a large
area metal− to− silicon power diode. State− of− the− art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical
to the system.
Features
Small Compact Surface Mountable Package with J− Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard− Ring for Stress Protection
AEC− Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These are PB− Free Packages*
Mechanical Characteristics
Case: Epoxy, Molded, Epoxy Meets UL 94 V− 0 @ 0.125 in
Weight: 217 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Rating:
Machine Model, C (> 400 V)
Human Body Model, 3B (> 8000 V)
Device Meets MSL 1 Requirements
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
SMC
CASE 403
PLASTIC
SCHOTTKY BARRIER
RECTIFIER
5.0 AMPERES, 40 VOLTS
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRS540T3G SMC
(Pb−Free)
2,500 /
Tape & Reel
http://onsemi.com
B540 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
AYWW
B540G
G
(Note: Microdot may be in either location)
NRVBS540T3G SMC
(Pb−Free)
2,500 /
Tape & Reel
MBRS540T3G, NRVBS540T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40 V
Average Rectified Forward Current
(At Rated VR, TC = 105C)
IF(AV) 5 A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 KHz, TC = 80C)
IFRM 10 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 190 A
Storage Temperature Range Tstg −65 to +150 C
Operating Junction Temperature (Note 1) TJ−65 to +150 C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance,
Junction−to−Lead (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJL
RqJA
12
111
C/W
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 5.0 A, TC= 25C)
VF0.50
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = 25C)
(Rated dc Voltage, TC = 100C)
iR0.3
15
mA
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MBRS540T3G, NRVBS540T3G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
10
1
0.1
VF
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.10 0.30 0.50
TJ = 125C
TJ = −55C
TJ = 25C
IF
, INSTANTANEOUS FORWARD
CURRENT (A)
VR, REVERSE VOLTAGE (V)
100E−3
10E−3
10E−6
100E−6
30 4020100
IR, REVERSE CURRENT (A)
100E−9
100E−12
TJ = 125C
0.20 0.40 0.60
TJ = 100C
10
1
0.1
VF
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (V)
0.10 0.30 0.50
TJ = 125C
TJ = −55C
TJ = 25C
IF
, INSTANTANEOUS FORWARD
CURRENT (A)
0.20 0.40 0.70
TJ = 100C
0.60
1E−3
1E−6
10E−9
1E−9
TJ = −55C
TJ = 25C
TJ = 100C
VR, REVERSE VOLTAGE (V)
100E−3
10E−3
10E−6
100E−6
30 4020100
IR, MAXIMUM REVERSE CURRENT (A)
TJ = 125C
1E−3
1E−6
TJ = −55C
TJ = 25C
TJ = 100C
Figure 5. Current Derating
25 45 8565
0
5
IO, AVERAGE FORWARD
CURRENT (A)
TL, LEAD TEMPERATURE (C)
Figure 6. Forward Power Dissipation
134602 5
4.5
0
1.5
IO, AVERAGE FORWARD CURRENT (A)
PFO, AVERAGE POWER DISSIPATION (W)
1
2
3
4
9
6
7
8
SQUARE WAVE
dc
Ipk/IO = 20
798
0.5
1
2.5
2
4
105 145125
Ipk/IO = 10
Ipk/IO = 5
Ipk/IO = p
freq = 20 kHz
3.5
3
dc
SQUARE
WAVE
Ipk/IO = p
Ipk/IO = 5
Ipk/IO = 10
Ipk/IO = 20
MBRS540T3G, NRVBS540T3G
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Figure 8. Typical Operating Temperature
Derating
VR, REVERSE VOLTAGE (V)
302520151050
100
1000
C, CAPACITANCE (pF)
40
VR, DC REVERSE VOLTAGE (V)
302520151050
115
105
95
85
75
65
55
125
TJ, DERATED OPERATING TEMPERATURE (C)
4535
TJ = 25 C
4035
RqJA = 12 C/W
RqJA = 136 C/W
RqJA = 47 C/W
RqJA = 111 C/W
RqJA = 81 C/W
Figure 9. Thermal Response − MBRS540T3G, NRVBS540T3G on min pad
Test Type > min pad 1 oz
RqJC = min pad 1 oz C/W
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t, TIME (s)
Figure 10. Thermal Response − MBRS540T3G, NRVBS540T3G on 1” pad
r(t), TRANSIENT THERMAL RESPONSE (C/W)
100
1
0.1
0.2
D = 0.5
0.05
SINGLE PULSE
0.1
0.00001 0.0001 0.001 0.01 1 100 1000
0.01
10
0.1 10
Test Type > min pad 1 oz
RqJC = min pad 1 oz C/W
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t, TIME (s)
r(t), TRANSIENT THERMAL RESPONSE (C/W)
1000
1
0.1
0.2
D = 0.5
0.05
SINGLE PULSE
0.1
0.00001 0.0001 0.001 0.01 1 100 1000
0.01
10
0.1 10
0.02
0.02
100
MBRS540T3G, NRVBS540T3G
http://onsemi.com
5
PACKAGE DIMENSIONS
SMC
CASE 403−03
ISSUE E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.90 2.13 2.41 0.075
INCHES
A1 0.05 0.10 0.15 0.002
b2.92 3.00 3.07 0.115
c0.15 0.23 0.30 0.006
D5.59 5.84 6.10 0.220
E6.60 6.86 7.11 0.260
L0.76 1.02 1.27 0.030
0.084 0.095
0.004 0.006
0.118 0.121
0.009 0.012
0.230 0.240
0.270 0.280
0.040 0.050
NOM MAX
7.75 7.94 8.13 0.305 0.313 0.320
HE
4.343
0.171
3.810
0.150
2.794
0.110 ǒmm
inchesǓ
SCALE 4:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
E
bD
c
L1L A1
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03.
HE
0.020 REF
0.51 REF
L1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 81−3−5817−1050
MBRS540T3/D
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