BSS215P OptiMOSTM P2 Small-Signal-Transistor Product Summary Features V DS * P-channel R DS(on),max * Enhancement mode * Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 m V GS=-2.5 V 280 ID -1.5 A * Avalanche rated PG-SOT23 * Qualified according to AEC Q101 3 * 100% lead-free; RoHS compliant * Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS215P PG-SOT23 H6327: 3000 pcs/ reel YDs Yes Non dry Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 C -1.5 T A=70 C -1.18 Unit A Pulsed drain current I D,pulse T A=25 C -6 Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 11 mJ Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16V, di /dt =-200A/s, T j,max=150 C 6 kV/s Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Rev 2.3 page 1 12 V 0.5 W -55 ... 150 C 0 (<250V) V 260 C C 55/150/56 C 2011-07-08 BSS215P Parameter Values Symbol Conditions Unit min. typ. max. - - 250 -20 - - Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 A Gate threshold voltage V GS(th) V DS=VGS, I D=-11 A -1.2 -0.9 -0.6 Drain-source leakage current I DSS V DS=-20V, V GS=0 V, T j=25 C - - -1 V DS=-20V, V GS=0V, T j=150 C - - -100 V A Gate-source leakage current I GSS V GS=-12V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=-1.1 A - 166 280 m V GS=4.5 V, I D=-1.5 A - 105 150 |V DS|>2|I D|R DS(on)max, I D=1.18 A - 4.5 - Transconductance g fs S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB. Rev 2.3 page 2 2011-07-08 BSS215P Parameter Values Symbol Conditions Unit min. typ. max. - 260 346 - 102 135 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=-15 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 85 128 Turn-on delay time t d(on) - 6.7 - Rise time tr - 9.7 - Turn-off delay time t d(off) - 14.5 - Fall time tf - 14.0 - Gate to source charge Q gs - -0.49 - Gate to drain charge Q gd - -1.9 - Gate charge total Qg - -3.6 - Gate plateau voltage V plateau - -1.9 - V - - -0.5 A - - -6 - -0.8 -1.1 V - 21.0 - ns - -3.7 - nC V DD=-10 V, V GS=-4.5 V, I D=-1.5 A, R G=6 ns Gate Charge Characteristics V DD=16 V, I D=-1.5 A, V GS=0 to -4.5 V nC Reverse Diode Diode continous forward current IS T A=25 C Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.3 V GS=0 V, I F=-1.5 A, T j=25 C V R=10 V, I F=-1.5 A, di F/dt =100 A/s page 3 2011-07-08 BSS215P 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS-4.5 V 2 0.5 1.5 I D [A] P tot [W] 0.375 0.25 1 0.5 0.125 0 0 0 40 80 120 0 40 T A [C] 80 120 160 T A [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 1 s 10 s 100 s 10 0 0.5 102 1 ms 0.2 0.1 Z thJA [K/W] I D [A] 10 ms 10-1 0.05 101 0.02 0.01 DC single pulse 10-2 100 10-3 10 10-1 -1 10 0 10 1 10 2 V DS [V] Rev 2.3 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2011-07-08 BSS215P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 500 7 3.3 V 6 1.8 V 450 5V 2V 400 2.5 V 5 350 4 R DS(on) [m] 10 V I D [A] 2.3 V 3 2 300 2.3 V 250 200 2.5 V 150 2V 3.3 V 5V 100 1 7V 10 V 1.8 V 50 0 0 0 1 2 0 3 1 2 3 4 6 8 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 10 6 5 8 4 g fs [S] I D [A] 6 3 4 2 150 C 2 1 25 C 0 0 0 1 2 3 V GS [V] Rev 2.3 0 2 4 I D [A] page 5 2011-07-08 BSS215P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.5 A; V GS=-4.5 V V GS(th)=f(T j); V DS=VGS; I D=-11 A parameter: I D 240 1.6 200 1.2 V GS(th) [V] 160 R DS(on) [m] 98 % 98 % 120 typ typ 0.8 2% 80 0.4 40 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [C] 60 100 140 180 T j [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C I F=f(V SD) parameter: T j 103 101 100 Ciss Coss Crss 102 I F [A] C [pF] 150 C, 98% 10-1 150 C 25 C, 98% 25 C 10-2 101 10-3 0 5 10 15 20 V DS [V] Rev 2.3 0 0.4 0.8 1.2 1.6 V SD [V] page 6 2011-07-08 BSS215P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=-1.5 A pulsed parameter: T j(start) parameter: V DD 101 6 5 4V 10 V 16 V 25 C V GS [V] I AV [A] 4 100 100 C 3 2 125 C 1 10-1 0 100 101 102 103 0 1 t AV [s] 2 3 4 5 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 A 24 V GS 23 Qg 22 V BR(DSS) [V] 21 20 V g s(th) 19 18 Q g(th) 17 Q sw Q gs 16 -60 -20 20 60 100 Q g ate Q gd 140 T j [C] Rev 2.3 page 7 2011-07-08 BSS215P SOT23 Package Outline: Footprint: Rev 2.3 Packaging: page 8 2011-07-08 BSS215P Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. 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