TIP2955 PNP SILICON POWER TRANSISTOR Designed for Complementary Use with the TIP3055 Series 90 W at 25C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) VCBO -100 V Collector-emitter voltage (IB = 0) (see Note 1) VCER -70 V Emitter-base voltage VEBO -7 V IC -15 A Continuous collector current Continuous base current E T E L O S B O Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. IB -7 A Ptot 90 W Ptot 3.5 W 1/2LIC2 62.5 mJ C Tj -65 to +150 Tstg -65 to +150 C TL 260 C This value applies when the base-emitter resistance RBE = 100 . Derate linearly to 150C case temperature at the rate of 0.72 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -10 V. JANUARY 1972 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP2955 PNP SILICON POWER TRANSISTOR electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICEO ICEV IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage Collector cut-off current Voltage between base and emitter Emitter cut-off current TEST CONDITIONS IC = -30 mA IB = 0 VCE = -30 V IB = 0 VCE = -100 V VEB = -7 V (see Note 5) mA IC = 0 -5 mA -4 V IC = -4 V IC = -10 A - 4A Collector-emitter IB = -0.4 A IC = saturation voltage IB = -3.3 A IC = -10 A Small signal forward current transfer ratio Small signal forward current transfer ratio V -5 VCE = -4 V -60 UNIT VBE = 1.5 V VCE = VCE = MAX mA transfer ratio voltage TYP -0.7 Forward current Base-emitter MIN IC = 20 (see Notes 5 and 6) - 4A 70 5 -1.1 (see Notes 5 and 6) -4 A -3 (see Notes 5 and 6) -1.8 VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 E T E L O S B O V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 1.39 C/W RJA Junction to free air thermal resistance 35.7 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER ton Turn-on time toff Turn-off time TEST CONDITIONS MIN IC = -6 A IB(on) = -0.6 A IB(off) = 0.6 A 0.4 s VBE(off) = 4 V RL = 5 tp = 20 s, dc 2% 0.7 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JANUARY 1972 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP2955 PNP SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS638AD 1000 hFE - DC Current Gain VCE = -4 V TC = 25C tp = 300 s, duty cycle < 2% 100 E T E L O S B O 10 -0*01 -0*1 -1*0 -10 IC - Collector Current - A Figure 1. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS638AB t p = 300 s, d = 0.1 = 10% t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% DC Operation -10 -1*0 -0*1 -1*0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 2. JANUARY 1972 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP2955 PNP SILICON POWER TRANSISTOR THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS637AB Ptot - Maximum Power Dissipation - W 100 80 60 40 20 E T E L O S B O 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 3. 4 JANUARY 1972 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.