EGP20BHE3/54 - Vishay Presicion Group

Document Number: 88583 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Glass Passivated Ultrafast Rectifier

EGP20A thru EGP20G

Vishay General Semiconductor

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and

freewheeling application in switching mode converters and

inverters for consumer, computer and telecommunication.

MECHANICAL DATA

Case: DO-204AC, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 2.0 A

VRRM 50 V to 400 V

IFSM 75 A

trr 50 ns

VF0.95 V, 1.25 V

TJ max. 150 °C

DO-204AC (DO-15)

SUPERECTIFIER®

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT

Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V

Maximum RMS voltage VRMS 35 70 105 140 210 280 V

Maximum DC blocking voltage VDC 50 100 150 200 300 400 V

Maximum average forward rectified current

0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 2.0 A

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load IFSM 75 A

Operating and storage temperature range TJ, TSTG - 65 to + 150 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88583

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

EGP20A thru EGP20G

Vishay General Semiconductor

Note

(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT

Maximum instantaneous

forward voltage 2.0 A VF0.95 1.25 V

Maximum DC reverse

current at rated DC

blocking voltage

TA = 25 °C

5.0

μA

TA = 125 °C 100

Maximum reverse

recovery time

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 50 ns

Typical junction

capacitance 4.0 V, 1 MHz CJ70 45 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT

Typical thermal resistance

RJA (1) 40

°C/W

RJL (1) 15

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

EGP20D-E3/54 0.452 54 4000 13" Diameter paper tape and reel

EGP20D-E3/73 0.452 73 2000 Ammo pack packaging

EGP20DHE3/54 (1) 0.452 54 4000 13" Diameter paper tape and reel

EGP20DHE3/73 (1) 0.452 73 2000 Ammo pack packaging

2.0

3.0

7550250 100 125 150 175

Average Forward Rectied Current (A)

Ambient Temperature (°C)

1.0

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

1 10010

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

= T

Max.

8.3 ms Single Half Sine-Wave

Document Number: 88583 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

EGP20A thru EGP20G

Vishay General Semiconductor

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Instantaneous Forward Characteristics

Fig. 6 - Typical Reverse Leakage Characteristics

Fig. 7 - Typical Junction Capacitance

Fig. 8 - Typical Transient Thermal Impedance

0.2 0.4 0.6 0.8 1.0 1.2

Instantaneous Forward Voltage (V)

100

0.1

0.01

Instantaneous Forward Current (A)

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

TJ = 100 °C

EGP20A thru EGP20D

0 40608010020

Percent of Peak Reverse Voltage (%)

100

0.1

0.01

0.001

Instantaneous Reverse Leakage

Current (μA)

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

TJ = 100 °C

EGP20A thru EGP20D

100

0.1

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

= 150 °C

= 125 °C

= 25 °C

= 100 °C

EGP20F and EGP20G

100

0.1

0.01

0.001

0 20 40 60 80 100

Percent of Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (μA)

= 150 °C

= 125 °C

= 25 °C

= 100 °C

EGP20F and EGP20G

0.1 101 100 1000

100

120

140

Reverse Voltage (V)

Junction Capacitance (pF)

= 25 °C

f = 1.0 MHz

sig

= 50 mV

p-p

EGP20A thru EGP20D

EGP20F and EGP20G

0.01 0.1 110 100

0.1

100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88583

4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

EGP20A thru EGP20G

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-204AC (DO-15)

0.034 (0.86)

0.028 (0.71)

DIA.

0.140 (3.6)

0.104 (2.6)

DIA.

1.0 (25.4)

MIN.

0.300 (7.6)

0.230 (5.8)

1.0 (25.4)

MIN.

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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