Document Number: 88583 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Glass Passivated Ultrafast Rectifier
EGP20A thru EGP20G
Vishay General Semiconductor
FEATURES
Superectifier structure for high reliability condition
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters and
inverters for consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 2.0 A
VRRM 50 V to 400 V
IFSM 75 A
trr 50 ns
VF0.95 V, 1.25 V
TJ max. 150 °C
DO-204AC (DO-15)
SUPERECTIFIER®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V
Maximum RMS voltage VRMS 35 70 105 140 210 280 V
Maximum DC blocking voltage VDC 50 100 150 200 300 400 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 2.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 75 A
Operating and storage temperature range TJ, TSTG - 65 to + 150 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88583
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGP20A thru EGP20G
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT
Maximum instantaneous
forward voltage 2.0 A VF0.95 1.25 V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 125 °C 100
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 50 ns
Typical junction
capacitance 4.0 V, 1 MHz CJ70 45 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT
Typical thermal resistance
RJA (1) 40
°C/W
RJL (1) 15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
EGP20D-E3/54 0.452 54 4000 13" Diameter paper tape and reel
EGP20D-E3/73 0.452 73 2000 Ammo pack packaging
EGP20DHE3/54 (1) 0.452 54 4000 13" Diameter paper tape and reel
EGP20DHE3/73 (1) 0.452 73 2000 Ammo pack packaging
0
2.0
3.0
7550250 100 125 150 175
Average Forward Rectied Current (A)
Ambient Temperature (°C)
1.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
15
30
45
60
75
90
1 10010
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Document Number: 88583 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGP20A thru EGP20G
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Reverse Leakage Characteristics
Fig. 7 - Typical Junction Capacitance
Fig. 8 - Typical Transient Thermal Impedance
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
100
10
1
0.1
0.01
Instantaneous Forward Current (A)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 100 °C
EGP20A thru EGP20D
0 40608010020
Percent of Peak Reverse Voltage (%)
100
10
1
0.1
0.01
0.001
Instantaneous Reverse Leakage
Current (μA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 100 °C
EGP20A thru EGP20D
100
10
1
0.1
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
EGP20F and EGP20G
100
10
1
0.1
0.01
0.001
0 20 40 60 80 100
Percent of Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
EGP20F and EGP20G
0.1 101 100 1000
0
20
40
60
80
100
120
140
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
EGP20A thru EGP20D
EGP20F and EGP20G
0.01 0.1 110 100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88583
4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGP20A thru EGP20G
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
DIA.
0.140 (3.6)
0.104 (2.6)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
MIN.
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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