Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 5 1Publication Order Number:
2N7000/D
2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
N−Channel TO−92
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage VDSS 60 Vdc
Drain−Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp 50 s) VGS
VGSM ±20
±40 Vdc
Vpk
Drain Current
− Continuous
− Pulsed ID
IDM 200
500
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Operating and Storage Temperature
Range TJ, Tstg 55 to
+150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to
Ambient RJA 357 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16 from case
for 10 seconds
TL300 °C
2N7000
Y = Year
WW = Work Week
YWW
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO−92
CASE 29
Style 22
N−Channel
S
123
1
Source 3
Drain
2
Gate
200 mAMPS
60 VOLTS
RDS(on) = 5
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2N7000
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 10 Adc) V(BR)DSS 60 Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
IDSS
1.0
1.0 Adc
mAdc
Gate−Body Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0) IGSSF −10 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 3.0 Vdc
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
rDS(on)
5.0
6.0
Ohm
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
VDS(on)
2.5
0.45
Vdc
On−State Drain Current
(VGS = 4.5 Vdc, VDS = 10 Vdc) Id(on) 75 mAdc
Forward Transconductance
(VDS = 10 Vdc, ID = 200 mAdc) gfs 100 mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 60 pF
Output Capacitance (VDS = 25 V, VGS = 0,
f 10MH )
Coss 25
Reverse Transfer
Capacitance
(DS ,GS ,
f = 1.0 MHz) Crss 5.0
SWITCHING CHARACTERISTICS (Note 1)
T urn−On Delay Time (VDD = 15 V, ID = 500 mA, ton 10 ns
Turn−Off Delay Time
(VDD
15
V
,
ID
500
mA
,
RG = 25 , RL = 30 , Vgen = 10 V) toff 10
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2N7000
http://onsemi.com
3
ID, DRAIN CURRENT (AMPS)
rDS(on), STATIC DRAIN−SOURCE ON−RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
−60 −20 +20 +60 +100 +140 −60 −20 +20 +60 +100 +140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain−Source On−Resistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V −55 °C25°C
125°C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
2N7000
http://onsemi.com
4
ORDERING INFORMATION
Device Package Shipping
2N7000 TO−92 1000 Unit/Box
2N7000G TO−92
(Pb−Free) 1000 Unit/Box
2N7000RLRA TO−92 2000 Tape & Reel
2N7000RLRAG TO−92
(Pb−Free) 2000 Tape & Reel
2N7000RLRM TO−92 2000 Ammo Pack
2N7000RLRMG TO−92
(Pb−Free) 2000 Ammo Pack
2N7000RLRP TO−92 2000 Ammo Pack
2N7000RLRPG TO−92
(Pb−Free) 2000 Ammo Pack
2N7000ZL1 TO−92 2000 Ammo Pack
2N7000ZL1G TO−92
(Pb−Free) 2000 Ammo Pack
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
2N7000
http://onsemi.com
5
PACKAGE DIMENSIONS
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
TO−92
CASE 29−11
ISSUE AL NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
2N7000
http://onsemi.com
6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
2N7000/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.