©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX53/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
45
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
45
60
80
100
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 8 A
ICP *Collector Current (Pulse) 12 A
IB Base Current 0.2 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BDX5 3
: BDX5 3A
: BDX5 3B
: BDX5 3C
IC = 100mA, IB = 0 45
60
80
100
V
V
V
V
ICBO Collector Cut-off Current : BDX53
: BDX5 3A
: BDX5 3B
: BDX5 3C
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
200
200
200
200
µA
µA
µA
µA
ICEO Collector Cut-off Current : BDX53
: BDX5 3A
: BDX5 3B
: BDX5 3C
VCE = 22V, IB = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
500
500
500
500
µA
µA
µA
µA
IEBO E mitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V, IC = 3A 75 0
VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA 2 V
VBE(sat) * Base-Emitter Saturation Vo ltage IC = 3A, IB = 12mA 2.5 V
VF* Parallel Diode Forward Voltage IF= 3A
IF= 8A 1.8
2.5 2.5 V
V
BDX53/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX 54C respect ively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
BDX53/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Damper Diode Forward Voltage
Figure 5. Safe Operating Area Figure 6. Po w er Derating
0.1 1 10
100
1000
10000
100000
VCE = 3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
IC = 250IB
VBE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
IC = 250IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
VF(sat)[V], FORWARD VOLTAGE
IF[A], FORWARD CURRENT
1 10 100 1000
0.1
1
10
100
BDX53C
BDX53B
BDX53A
IC Max. (Continuous)
IC Max. (Pulsed)
BDX53
DC
100us
10us
1ms
IC[A], COLLECT OR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PD[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX53/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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FAST®
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GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
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