DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS * High DC Current Gain: hFE = 200 TYP. in millimeters (VCE = 6.0 V, IC = 1.0 mA) 2.8 0.2 0.4 +0.1 -0.05 * High Voltage: VCEO = 50 V 0.65 +0.1 -0.15 1.5 VCBO Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) IC 100 mA at 25 C Ambient Temperature PT 200 mW 150 C 2 1 3 0.4 +0.1 -0.05 V Collector to Base Voltage 0.95 60 2.9 0.2 Maximum Voltages and Current (TA = 25 C) 0.95 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Total Power Dissipation Tj Storage Temperature Range Tstg -55 to +150 C 1: Emitter 2: Base 3: Collector ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT 0 to 0.1 Junction Temperature 1.1 to 1.4 Maximum Temperatures 0.16 +0.1 -0.06 0.3 Marking TEST CONDITIONS Collector Cutoff Current ICBO 0.1 A VCB = 60 V, IE = 0 Emitter Cutoff Current IEBO 0.1 A VEB = 5.0 V, IC = 0 DC Current Gain hFE 90 200 600 VCE = 6.0 V, IC = 1.0 mA* Collector Saturation Voltage VCE(sat) 0.15 0.3 V IC = 100 mA, IB = 10 mA* Base to Saturation Voltage VBE(sat) 0.86 1.0 V IC = 100 mA, IB = 10 mA* 0.62 0.65 V VCE = 6.0 V, IC = 1.0 mA* VCE = 6.0 V, IE = -10 mA Base Emitter Voltage Gain Bandwidth Product Output Capacitance VBE 0.55 fT 250 MHz Cob 3.0 pF VCB = 6.0 V, IE = 0, f = 1.0 MHz * Pulsed: PW 350 s, Duty Cycle 2 % hFE Classification Marking L4 L5 L6 L7 hFE 90 to 180 135 to 270 200 to 400 300 to 600 Document No. TC-1481C (O.D. No. TC-5172C) Date Published July 1995 P Printed in Japan (c) 1984 2SC1623 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW 200 180 Free air 160 140 120 100 80 60 40 20 0 -20 0 20 40 60 80 100 120 140 160 180 TA - Ambient Temperature - C ICBO (TA) - Normalized Collector Cutottt Current ICBO (TA = 25 C) TYPICAL CHARACTERISTICS (TA = 25 C) NORMALIZED COLLECTOR CUTOFF CURRENT vs. AMBIENT TEMPERATURE 10000 5000 2000 1000 500 200 100 50 20 10 5 2 1 0 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 80 60 40 0.3 0.2 40 IB = 0.1 mA 20 0 0 0 40 60 80 100 120 140 160 TA - Ambient Temperature - C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 45 10 1.0 0.98 0. 7 0. 0.6 0.5 0.4 IC - Collector Current - mA IC - Collector Current - mA 100 20 0.4 0.8 1.2 1.6 VCE - Collector to Emitter Voltage - V 8 30 6 25 20 4 15 10 2 0 2.0 35 IB = 5.0 A 0 0 10 20 30 40 VCE - Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT 50 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 6.0 V Pulsed 500 300 100 1000 VCE = 6.0 V 1.0 V 0.5 V 50 30 10 5 3 0.1 0.2 2 hFE - DC Current Gain hFE - DC Current Gain 1000 500 300 TA = 75 C 25 C -25 C 100 50 30 10 0.5 1.0 2.0 5.0 10 20 IC - Collector Current - mA 50 100 5 3 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC - Collector Current - mA 50 100 2SC1623 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT VBE(sat) - Base Saturation Voltage - V VCE(cat) - Collector Saturation Voltage - V 100 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.3 C -25 TA = 75 C 5 2 1 25 C IC - Collector Current - mA VCE = 6.0 V 50 Pulsed 20 10 0.4 0.5 0.6 0.7 0.8 0.9 VBE - Base to Emitter Voltage - V 1.0 10 1 0.2 IC = 50 * IB VCE(sat) 0.1 20 10 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 IC - Collector Current - mA 100 2000 1000 VCE =10 V 6 V 500 200 2V 1V 100 50 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 IE - Emitter Current - mA 20 5 E 2 0.5 0.5 1 2 5 10 20 50 100 VCB - Collector to Base Voltage - V VEB - Emittor to Base Voltage - V 1000 80 60 40 20 0 40 30 20 10 0 50 hie - Input Impedance - k hoe - Output Admittance - S 200 400 600 800 hFE - DC Current Gain = 0) 1 50 hre - Voltage Feedback Ratio - x10-4 100 400 200 = 0) INPUT IMPEDANCE VOLTAGE FEEDBACK RATIO AND OUTPUT ADMITTANCE vs. SMALL SIGNAL CURRENT GAIN 600 0 C Cob (I 0.2 0.1 0.1 0.2 -50 -100 VCE = 6.0 V IC = 1.0 mA f = 1.0 kHz 800 Cib (I 10 SMALL SIGNAL CURRENT GAIN vs. DC CURRENT GAIN 1000 50 100 f = 1.0 MHz 50 5000 Cib - Input Capacitance - pF Cob - Output Capacitance - pF fT - Gain Bandwidth Product - MHz VBE(sat) 0.5 INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE 10000 hfe - Small Signal Current Gain IC = 50 * IB 20 10 2 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 0 Pulsed 5 VCE = 6.0 V IC = 1.0 mA f = 1.0 kHz 40 30 20 hoe hre hie 10 0 200 400 600 800 hfe - Small Signal Current Gain 1000 3 2SC1623 NORMALIZED h-PARAMETER vs. COLLECTOR CURRENT 10 hre He - Normalized h - Parameter He - Normalized h - Parameter 5 hoe 2 hfe hfe 0.5 hoe hre 0.2 0.1 4 3 VCE = 6.0 V f = 1.0 kHz he(IC) He = he(IC = 1.0 mA) hie 1 NORMALIZED h-PARAMETER vs. COLLECTOR TO EMITTER VOLTAGE ICE = 1.0 V f = 1.0 kHz He = he(VCE) he(VCE = 6 V) 2 hoe hre hfe hie hre 1 hfe hie hoe hie 0.1 0.2 0.5 1 2 IC - Collector Current - mA 5 10 0 10 20 VCE - Collector to Emitter Voltage - V 30 2SC1623 [MEMO] 5 2SC1623 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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