BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINER AND SWITCHING APPLICATIONS Complement to BDX34/34.4/34B/34C respectively ABSOLUTE MAXIMUM RATINGS TO-220 Characteristic Symbol Rating Unit Collector Base Voltage : BDX33 Vesa 45 Vv : BDX33A 60 V : BDX33B 80 Vv : BDX33C 100 V . Collector Emitter Voltage : BDX33 Veeo 45 Vv Base 2.Collector 3.Eritter : BDX33A 60 Vv : BDX33B 80 Vv : BDX33C 100 V Collector Current (DC) le 10 A Collector Current {Pulse} le 15 A Base Current lp 0.25 A Collector Dissipation (Tp=25C) Pe 70 Ww Junction Temperature Ty 150 C Storage Temperature Tsts 65 ~ 150 Cc ELECTRICAL CHARACTERISTICS (7, =25c) Characteristic Symbol Test Conditions Min | Typ | Max | Unit *Collector Emitter Sustaining Voltage : BDX33 Voeofsus) Ic= 100mA Ip = 0 45 Vv : BDX33A 60 Vv : BDX33B 80 Vv : BDX33C 100 Vv *Collector Emitter Sustaining Voltage -BDX33 Veen(sus) Ic= 100mA, Ip =0 45 Vv : BDX33A Ree= 1002 60 Vv : BDX33B 80 Vv : BDX33C 100 Vv *Collector Emitter Sustaining Voltage BDX33 Veev(Sus) Ic= 100mA, Ig=0 45 Vv : BDX33A Vee= 1.5V 60 Vv : BDX33B 80 Vv : BDX33C 100 Vv Collector Cutoff Current : BDX33 loge Vop=45V,1-=0 02 mA : BDX33A Vop=60V,le=0 02 mA : BDX33B Vep=80V,le=0 02 mA : BDX33C Voe= 100V, Iz=0 02 | mA Collector Cutoff Current :BBX33 Ica Vor = 22V,lg=0 05 mA : BDX33A Voe= 30V.I5=0 05 | mA : BDX33B Voe=40V,I2=0 05 | mA : BDX33C Voe = 50V,lp=0 05 mA Emitter Cutoff Current lesa Vep=5V, Ic=O 5 mA *DC Current Gain : BDX33/34 Are Voe = 3V, Ip = 4A 750 : BDX33B/33C Vor = 3V, le = 3A 750 *Collector Emitter Saturation Voltage :BDX33/33A Vce(sat) Ic= 4A, le= 8mA 25 V : BDX33B/330 Ic= 3A, Ip=6MA 25 v *Base Emitter On Voltage : BDX33/33A Vee(on) Vor = 3V, le = 4A 25 Vv : BDX33B/33C Ve Vor = 3V, Ie = 3A 25 Vv * Parallel Diode Forward Voltage p= 8A 4 Vv * Pulse Test: PW=300us, duty Cycle =1.5% Pulse Rev.B es FAIRCHILD ee SEMICONDUCTOR m 1999 Farchild Semiconducter Corporation BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR OC CURRENT GAIN 100K wo S a ba S x 3 x mn x wy x hee, DG CURRENT GAIN 5 = 100 a4 2 O5 1 2 IA}, COLLECTOR CURRENT BASE EMITTER VOLTAGE (of), COLLECTOR GUARENT 0 1 2 3 Veel, BASE EMITTER VOLTAGE SAFE OPERATING AREA iia}, COLLECTOR CURRENT + 2 #& 0 a 3 10 200 500 1000 Ver), COLLECTOR EMITTER VOLTAGE COLLECTOR EMITTER SATURATION VOLTAGE 10 os Weelsalll, SATURATION VOLTAGE G2 O.1 or 02 Os 1 2 5 10 ef}, COLLECTOR CURRENT COLLECTOR BASE CAPACITANCE CcanlpFi, COLLECTOR BASE CAPACITANCE 1 2 5 10 20 5 100 Yed) COl' ECTOR EMITTER VOLTAGE POWER DERATING Pow), POWER DISSIPATION 0 2 5 Mh 100 125 180175 To{*G}, CASE TEMPERATURE ee FAIRCHILD ere SEMICONDUCTOR =, TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT QS FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE GHANGES WITHOUT FURTHER NOTIGE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNGTION OR DESIGN. FAIRGHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.