2001 Semiconductor Components Industries, LLC.
October-2017, Rev. 5
Publication Order Number:
FDC640P/D
FDC640P
P-Channel 2.5V PowerTrench
Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of ON Semiconductor’s advanced
PowerTrench process. It has been optimized for
power management applications with a wide range of
gate drive voltage (2.5V – 12V).
Applications
Battery management
Load switch
Battery protection
Features
–4.5 A, –20 V RDS(ON) = 0.053 @ VGS = –4.5 V
RDS(ON) = 0.080 @ VGS = –2.5 V
Rugged gate rating (±12V)
Fast switching speed
High performanc e trenc h technology for extremely
low RDS(ON)
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Sourc e V oltage –20 V
VGSS Gate-Source Voltage ±12 V
IDDrain Current – Continuous (Note 1a) –4.5 A
Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 WPD
(Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-A mbient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.640 FDC640P 7’’ 8mm 3000 units
FDC640P
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2
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA–20 V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenc ed to 25°C–14 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leak age, Reverse VGS = –12 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA–0.6 –1.0 –1.5 V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coeffic i ent ID = –250 µA, Referenced to 25°C3mV/°C
RDS(on) Static Drain–S ource
On–Resistance VGS = –4.5 V, ID = –4.5 A
VGS = –2.5 V, ID = –3.6 A
VGS = –4.5 V, ID = –4.5A,TJ=125°C
0.039
0.062
0.053
0.053
0.080
0.077
ID(on) On–Stat e Drain Current VGS = –4.5 V, VDS = –5 V –20 A
gFS Forward Transconductance VDS = –5 V, ID = –4.5 A 16 S
Dynam ic Ch ara cteristics
Ciss Input Capacitance 890 pF
Coss Output Capacitance 244 pF
Crss Reverse Transfer Capacitance
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz 123 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 12 22 ns
trTurn–On Rise Time 9 18 ns
td(off) Turn–Of f Delay Time 24 38 ns
tfTurn–Off Fall Time
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6
13 23 ns
QgTotal Gate Charge 9 13 nC
Qgs Gate–Source Charge 2 nC
Qgd Gate–Drain Charge
VDS = –10 V, ID = –4.5 A,
VGS = –4.5 V
3nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drai n–S ource Diode Forward Current –1.3 A
VSD Drain–Source Di ode Forward
Voltage VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDC640P
Typical Characteristics
0
3
6
9
12
15
00.511.522.5
-VDS, DRAIN -S O URCE VO LTAG E (V)
-I
D
, DRAIN CURRENT (A)
-3.0V -2.5V
-2.0V
VGS = -4.5V
-3.5V
0.5
1
1.5
2
2.5
3
03691215
-ID, DRAIN CURRE NT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -2.0V
-3.5V
-3.0V -4.0V -4.5V
-2.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -4.5 A
VGS = -4.5 V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
1.522.533.544.55
-VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = -2.25 A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
12
0.511.522.53
-VGS, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
TA = -55oC
125oC
VDS = -5V 25oC
0.0001
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIO DE FORWARD VOLT AGE ( V )
-I
S
, REVERSE DRAIN CURRENT (A
)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC640P
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Typical Characteristics
0
1
2
3
4
5
024681012
Qg, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
ID = -4.5A VDS = -5V
-15V
-10V
0
200
400
600
800
1000
1200
0 5 10 15 20
-VDS, DRAIN TO SOURCE VO LTAGE (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VO LTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
10s1s
100ms
100
µ
s
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
10ms1ms
0
1
2
3
4
5
0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 156°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMAL IZED E F F E CT IVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJA = 156°C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P
(p
k
)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
FDC640P
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4
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