NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features * * * * Leading Trench Technology for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(on) Typ ID Max 39 mW @ -4.5 V -8.0 V Applications -3.7 A 52 mW @ -2.5 V * High Side Load Switch * DC-DC Conversion * Cell Phone, Notebook, PDAs, etc. 79 mW @ -1.8 V P-Channel D MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS -8.0 V Gate-to-Source Voltage VGS 8.0 V ID -3.7 A Continuous Drain Current (Note 1) t5s Power Dissipation (Note 1) TA = 25C TA = 70C S -3.0 t5s PD 0.96 W tp = 10 ms IDM -11 A TJ, TSTG -55 to 150 C Source Current (Body Diode) IS -1.2 A Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Symbol Max Unit Junction-to-Ambient - Steady State RqJA 160 C/W Junction-to-Ambient - t 5 s RqJA 130 Pulsed Drain Current G 3 Operating Junction and Storage Temperature THERMAL RESISTANCE RATINGS Parameter Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1 2 SOT-23 CASE 318 STYLE 21 TR7 MG G 1 Gate 2 Source TR7 = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NTR2101PT1G SOT-23 (Pb-Free) 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2011 April, 2011 - Rev. 5 1 Publication Order Number: NTR2101P/D NTR2101P ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA -8.0 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 10 VGS = 0 V, VDS = -6.4 V mV/C TJ = 25C -1.0 TJ = 125C -100 IGSS VDS = 0 V, VGS = 8.0 V VGS(TH) VGS = VDS, ID = -250 mA 100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS -0.40 -1.0 0.0027 VGS = -4.5 V, ID = -3.5 A 39 V mV/C 52 mW VGS = -2.5 V, ID = -3.0 A 52 72 VGS = -1.8 V, ID = -2.0 A 79 120 VGS = -5.0 V, ID = -3.5 A 9.0 S 1173 pF CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge CISS COSS CRSS VGS = 0 V, f = 1.0 MHz, VDS = -4.0 V QG(TOT) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 289 218 15 nC 7.4 15 ns 15.75 25 38 58 31 51 -0.73 -1.2 12 VGS = -4.5 V, VDS = -4.0 V, ID = -3.5 A 3.8 2.5 SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) VGS = -4.5 V, VDD = -4.0 V, ID = -1.2 A, RG = 6.0 W tf DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -1.2 A 2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 TJ = 25C V NTR2101P TYPICAL CHARACTERISTICS 10 VGS = -2.6 V to -6.0 V -ID, DRAIN CURRENT (A) VGS = -2.4 V 8 -ID, DRAIN CURRENT (A) 10 TJ = 25C VGS = -2.0 V VGS = -2.2 V 6 VGS = -1.8 V 4 2 VGS = -1.4 V VDS -10 V 8 TJ = 150C 6 TJ = 25C 4 TJ = -55C 2 VGS = -1.2 V 0 0 1 2 3 4 0 5 0.15 0.1 0.05 0 1 2 3 4 5 6 0.08 VGS = -4.5 V 0.06 TJ = 150C TJ = 25C 0.04 TJ = -55C 0.02 0 2 3 4 5 6 7 -VGS, GATE-TO-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 1.7 8 100000 ID = -3.7 A VGS = -4.5 V VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 4 Figure 2. Transfer Characteristics 0.2 1.5 3 Figure 1. On-Region Characteristics ID = -3.7 A TJ = 25C 1.6 2 -VGS, GATE-TO-SOURCE VOLTAGE (V) 0.25 0 1 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 1.4 TJ = 150C 10000 1.3 1.2 1.1 1.0 1000 TJ = 100C 0.9 0.8 -50 100 -25 0 25 50 75 100 125 150 0 2 4 6 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 8 NTR2101P VDS = 0 VGS = 0 TJ = 25C C, CAPACITANCE (pF) 2000 1500 CISS CRSS 1000 500 COSS 0 -4 -2 0 -VGS -VDS 2 4 6 8 5 4 VGS 3 QGS 2 QDS 2 TJ = 25C ID = -3.5 A 1 0 0 2 4 6 8 10 12 1 0 14 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge Figure 7. Capacitance Variation 1000 6 100 -IS, SOURCE CURRENT (A) VDD = -4.0 V ID = -1.0 A VGS = -4.5 V tf td(off) tr 10 td(on) 1 10 4 3 2 1 0 100 VGS = 0 V TJ = 25C 5 0.3 0.45 0.6 Figure 9. Resistive Switching Time Variation versus Gate Resistance 10 100 ms 1 ms 10 ms 1 0.01 0.1 0.9 1.05 Figure 10. Diode Forward Voltage versus Current 100 0.1 0.75 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) -ID, DRAIN CURRENT (A) t, TIME (ns) 4 VDS 3 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) 1 5 QT -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 2500 -VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 0 V < VGS < 8 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 100 ms dc 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 1.2 NTR2101P TYPICAL CHARACTERISTICS 1000 r(t) (C/W) 100 10 D = 0.5 0.2 0.1 0.05 0.02 1 0.01 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 12. Thermal Response http://onsemi.com 5 1 10 100 1000 NTR2101P PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTR2101P/D