NTR2101PT1G - ON Semiconductor

April, 2011 − Rev. 5

1Publication Order Number:

NTR2101P/D

NTR2101P

Small Signal MOSFET

−8.0 V, −3.7 A, Single P−Channel, SOT−23

Features

•Leading Trench Technology for Low RDS(on)

•−1.8 V Rated for Low Voltage Gate Drive

•SOT−23 Surface Mount for Small Footprint (3 x 3 mm)

•This is a Pb−Free Device

Applications

•High Side Load Switch

•DC−DC Conversion

•Cell Phone, Notebook, PDAs, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS −8.0 V

Gate−to−Source Voltage VGS ±8.0 V

Continuous Drain

Current (Note 1)

t ≤ 5 s TA = 25°CID−3.7 A

TA = 70°C−3.0

Power Dissipation

(Note 1)

t ≤ 5 s PD0.96 W

Pulsed Drain Current tp = 10 msIDM −11 A

Operating Junction and Storage Temperature TJ,

TSTG

−55 to

150

°C

Source Current (Body Diode) IS−1.2 A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) TL260 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State RqJA 160 °C/W

Junction−to−Ambient − t ≤ 5 s RqJA 130

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

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V(BR)DSS RDS(on) Typ ID Max

−8.0 V

39 mW @ −4.5 V

52 mW @ −2.5 V

79 mW @ −1.8 V

−3.7 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

P−Channel

SOT−23

CASE 318

STYLE 21

MARKING DIAGRAM &

PIN ASSIGNMENT

TR7 = Specific Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

TR7 MG

Gate

Source

Drain

Device Package Shipping†

ORDERING INFORMATION

NTR2101PT1G 3000/Tape & ReelSOT−23

(Pb−Free)

NTR2101P

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−8.0 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ10 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = −6.4 V

TJ = 25°C−1.0 mA

TJ = 125°C−100

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V±100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA−0.40 −1.0 V

Negative Threshold

Temperature Coefficient

VGS(TH)/TJ0.0027 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −3.5 A 39 52 mW

VGS = −2.5 V, ID = −3.0 A 52 72

VGS = −1.8 V, ID = −2.0 A 79 120

Forward Transconductance gFS VGS = −5.0 V, ID = −3.5 A 9.0 S

CHARGES AND CAPACITANCES

Input Capacitance CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −4.0 V

1173 pF

Output Capacitance COSS 289

Reverse Transfer Capacitance CRSS 218

Total Gate Charge QG(TOT)

VGS = −4.5 V, VDS = −4.0 V,

ID = −3.5 A

12 15 nC

Gate−to−Source Charge QGS 3.8

Gate−to−Drain Charge QGD 2.5

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time td(on)

VGS = −4.5 V, VDD = −4.0 V,

ID = −1.2 A, RG = 6.0 W

7.4 15 ns

Rise Time tr15.75 25

Turn−Off Delay Time td(off) 38 58

Fall Time tf31 51

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = −1.2 ATJ = 25°C−0.73 −1.2 V

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

NTR2101P

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TYPICAL CHARACTERISTICS

012345

VGS = −2.6 V to −6.0 V

VGS = −2.4 V

VGS = −2.2 V

VGS = −2.0 V

VGS = −1.8 V

VGS = −1.4 V

VGS = −1.2 V

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

−ID, DRAIN CURRENT (A)

Figure 1. On−Region Characteristics

01234

TJ = 25°C

−VGS, GATE−TO−SOURCE VOLTAGE (V)

−ID, DRAIN CURRENT (A)

Figure 2. Transfer Characteristics

VDS ≥ −10 V

TJ = 25°C

TJ = 150°C

TJ = −55°C

0.05

0.1

0.15

0.2

0.25

0123456

−VGS, GATE−TO−SOURCE VOLTAGE (V)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID = −3.7 A

TJ = 25°C

0.02

0.04

0.06

0.08

2345678

−ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

TJ = 150°C

TJ = 25°C

TJ = −55°C

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

VGS = −4.5 V

0.8

0.9

1.1

1.2

1.3

1.4

1.5

1.6

1.7

−50 −25 0 25 50 75 100 125 150

1.0

TJ, JUNCTION TEMPERATURE (°C)

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

Figure 5. On−Resistance Variation with

Temperature

ID = −3.7 A

VGS = −4.5 V

100

1000

10000

100000

02468

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

VGS = 0 V

TJ = 150°C

TJ = 100°C

IDSS, LEAKAGE (nA)

NTR2101P

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TYPICAL CHARACTERISTICS

500

1000

1500

2000

2500

−4−20 2 4 6 8

Figure 7. Capacitance Variation

C, CAPACITANCE (pF)

−VGS −VDS

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

CRSS

COSS

TJ = 25°C

CISS

VGS = 0VDS = 0

02468101214

QG, TOTAL GATE CHARGE (nC)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

ID = −3.5 A

QGS QDS

VDS VGS

0.3 0.45 0.6 0.75 0.9 1.05 1.2

100

1000

1 10 100

VDD = −4.0 V

ID = −1.0 A

VGS = −4.5 V

td(off)

td(on)

t, TIME (ns)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

RG, GATE RESISTANCE (W)−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

−IS, SOURCE CURRENT (A)

Figure 10. Diode Forward Voltage versus

Current

VGS = 0 V

TJ = 25°C

0.01

0.1

100

0.1 1 10 100

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

−ID, DRAIN CURRENT (A)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0 V < VGS < 8 V

SINGLE PULSE

TC = 25°C

1 ms

100 ms

10 ms

100 ms

NTR2101P

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TYPICAL CHARACTERISTICS

0.1

100

1000

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

0.2

0.02

D = 0.5

0.05

0.01

SINGLE PULSE

r(t)

(°C/W)

t, PULSE TIME (s)

Figure 12. Thermal Response

NTR2101P

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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NTR2101P/D

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