S25FS128S
S25FS256S
1.8 V, Serial Peripheral Interface
with Multi-I/O, MirrorBit® Non-Volatile Flash
Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document Number: 002-00368 Rev. *K Revised April 11, 2018
Features
Density
– S25FS128S-128 Mbits (16 Mbytes)
– S25FS256S-256 Mbits (32 Mbytes)
Serial Peripheral Interface (SPI)
– SPI Clock polarity and phase modes 0 and 3
– Double Data Rate (DDR) option
– Extended Addressing: 24- or 32-bit address options
– Serial Command subset and footprint compatible with
S25FL-A, S25FL-K, S25FL-P, and S25FL-S SPI families
– Multi I/O Command subset and footprint compatible with
S25FL-P, and S25FL-S SPI families
Read
– Commands: Normal, Fast, Dual I/O, Quad I/O, DDR Quad
I/O
– Modes: Burst Wrap, Continuous (XIP), QPI
– Serial Flash Discoverable Parameters (SFDP) and
Common Flash Interface (CFI), for configuration
information
Program
– 256- or 512-byte Page Programming buffer
– Program suspend and resume
– Automatic ECC – internal hardware Error Correction Code
generation with single-bit error correction
Erase
– Hybrid sector option
– Physical set of eight 4-kbyte sectors and one 32-kbyte
sector at the top or bottom of address space with all
remaining sectors of 64 kbytes
– Uniform sector option
– Uniform 64-kbyte or 256-kbyte blocks for software
compatibility with higher density and future devices
– Erase suspend and resume
– Erase status evaluation
– 100,000 Program-Erase Cycles, minimum
– 20 Year Data Retention, minimum
Security Features
– One-Time Program (OTP) array of 1024 bytes
– Block Protection:
– Status Register bits to control protection against
program or erase of a contiguous range of sectors
– Hardware and software control options
– Advanced Sector Protection (ASP)
– Individual sector protection controlled by boot code or
password
– Option for password control of read access
Technology
– Cypress 65 nm MirrorBit® Technology with Eclipse™
Architecture
Supply Voltage
– 1.7V to 2.0V
Temperature Range / Grade
– Industrial (-40°C to +85°C)
– Industrial Plus (–40°C to +105°C)
– Automotive AEC-Q100 Grade 3 (–40°C to +85°C)
– Automotive AEC-Q100 Grade 2 (–40°C to +105°C)
– Automotive AEC-Q100 Grade 1 (–40°C to +125°C)
Packages (All Pb-Free)
– 8-lead SOIC 208 mil (SOC008) — FS128S only
–WSON 6 5 mm (WND008) — FS128S only
–WSON 6 8 mm (WNH008)
– 16-lead SOIC 300 mil (SO3016 — FS256S only)
– BGA-24 6 8 mm
–5 5 ball (FAB024) footprint
–4 6 ball (FAC024) footprint
– Known Good Die, and Known Tested Die
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Performance Summary
Table 1. Maximum Read Rates
Command Clock Rate (MHz) Mbytes/s
Read 50 6.25
Fast Read 133 16.5
Dual Read 133 33
Quad Read 133 66
Table 2. Maximum Read Rates DDR
Command Clock Rate (MHz) Mbytes/s
DDR Quad I/O Read 80 80
Table 3. Typical Program and Erase Rates
Operation kbytes/s
Page Programming (256-bytes Page Buffer) 712
Page Programming (512-bytes Page Buffer) 1080
4-kbyte Physical Sector Erase (Hybrid Sector Option) 16
64-kbyte Physical Sector Erase (Hybrid Sector Option) 275
256-kbyte Sector Erase (Uniform Logical Sector Option) 275
Table 4. Typical Current Consumption (–40°C to +85°C)
Operation Current (mA)
Serial Read 50 MHz 10
Serial Read 133 MHz 20
Quad Read 133 MHz 60
Quad DDR Read 80 MHz 70
Program 60
Erase 60
Standby 0.025
Deep Power-Down 0.006
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Contents
Performance Summary ........................................................ 2
1. Overview ....................................................................... 4
1.1 General Description ....................................................... 4
1.2 Migration Notes.............................................................. 5
1.3 Glossary......................................................................... 7
1.4 Other Resources............................................................ 8
2. Signal Descriptions ..................................................... 9
2.1 Input/Output Summary................................................... 9
2.2 Multiple Input / Output (MIO)........................................ 10
2.3 Serial Clock (SCK)....................................................... 10
2.4 Chip Select (CS#) ........................................................ 10
2.5 Serial Input (SI) / IO0 ................................................... 10
2.6 Serial Output (SO) / IO1............................................... 10
2.7 Write Protect (WP#) / IO2 ............................................ 10
2.8 IO3 / RESET# ............................................................. 11
2.9 Voltage Supply (VCC).................................................. 11
2.10 Supply and Signal Ground (VSS) ................................. 11
2.11 Not Connected (NC) .................................................... 11
2.12 Reserved for Future Use (RFU)................................... 12
2.13 Do Not Use (DNU) ....................................................... 12
2.14 Block Diagrams............................................................ 12
3. Signal Protocols......................................................... 14
3.1 SPI Clock Modes ......................................................... 14
3.2 Command Protocol ...................................................... 15
3.3 Interface States............................................................ 19
3.4 Configuration Register Effects on the Interface ........... 22
3.5 Data Protection ............................................................ 22
4. Electrical Specifications............................................ 23
4.1 Absolute Maximum Ratings ......................................... 23
4.2 Thermal Resistance..................................................... 23
4.3 Latch-Up Characteristics.............................................. 24
4.4 Operating Ranges........................................................ 24
4.5 Power-Up and Power-Down ........................................ 25
4.6 DC Characteristics....................................................... 27
5. Timing Specifications................................................ 29
5.1 Key to Switching Waveforms ....................................... 29
5.2 AC Test Conditions...................................................... 29
5.3 Reset............................................................................ 30
5.4 SDR AC Characteristics............................................... 33
5.5 DDR AC Characteristics .............................................. 36
6. Physical Interface ...................................................... 38
6.1 SOIC 16-Lead Package ............................................... 38
6.2 8-Connector Packages ................................................ 40
6.3 FAB024 24-Ball BGA Package .................................... 44
6.4 FAC024 24-Ball BGA Package.................................... 46
7. Address Space Maps................................................. 48
7.1 Overview ...................................................................... 48
7.2 Flash Memory Array..................................................... 48
7.3 ID-CFI Address Space................................................. 51
7.4 JEDEC JESD216 Serial Flash Discoverable Parameters
(SFDP) Space.............................................................. 51
7.5 OTP Address Space ..................................................... 52
7.6 Registers....................................................................... 53
8. Data Protection ........................................................... 70
8.1 Secure Silicon Region (OTP)........................................ 70
8.2 Write Enable Command................................................ 70
8.3 Block Protection............................................................ 71
8.4 Advanced Sector Protection ......................................... 72
8.5 Recommended Protection Process .............................. 77
9. Commands .................................................................. 78
9.1 Command Set Summary............................................... 79
9.2 Identification Commands .............................................. 84
9.3 Register Access Commands......................................... 86
9.4 Read Memory Array Commands .................................. 97
9.5 Program Flash Array Commands ............................... 104
9.6 Erase Flash Array Commands.................................... 106
9.7 One-Time Program Array Commands ........................ 113
9.8 Advanced Sector Protection Commands.................... 114
9.9 Reset Commands ....................................................... 120
9.10 DPD Commands ......................................................... 122
10. Embedded Algorithm Performance Tables............. 124
11. Data Integrity ............................................................. 125
11.1 Erase Endurance ........................................................ 125
11.2 Data Retention............................................................ 125
11.3 Serial Flash Discoverable Parameters (SFDP) Address
Map............................................................................. 125
11.4 Device ID and Common Flash Interface (ID-CFI) Address
Map............................................................................. 128
11.5 Initial Delivery State .................................................... 146
12. Ordering Part Number .............................................. 147
13. Contact ...................................................................... 149
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1. Overview
1.1 General Description
The Cypress S25FS-S family devices are flash non-volatile memory products using:
MirrorBit technology - that stores two data bits in each memory array transistor
Eclipse architecture - that dramatically improves program and erase performance
65 nm process lithography
TheS25FS-S family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and
output (Single I/O or SIO) is supported as well as optional 2-bit (Dual I/O or DIO) and 4-bit wide Quad I/O (QIO) or Quad Peripheral
Interface (QPI) serial commands. This multiple width interface is called SPI Multi-I/O or MIO. In addition, there are Double Data Rate
(DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock.
The FS-S Eclipse architecture features a Page Programming Buffer that allows up to 512 bytes to be programmed in one operation,
resulting in faster effective programming and erase than prior generation SPI program or erase algorithms.
Executing code directly from flash memory is often called Execute-In-Place or XIP. By using S25FS-S family devices at the higher
clock rates supported, with Quad or DDR Quad commands, the instruction read transfer rate can match or exceed traditional parallel
interface, asynchronous, NOR flash memories, while reducing signal count dramatically.
The S25FS-S family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or
embedded applications. They are an excellent solution for systems with limited space, signal connections, and power. They are ideal
for code shadowing to RAM, executing code directly (XIP), and storing reprogrammable data.
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1.2 Migration Notes
1.2.1 Features Comparison
The S25FS-S family is command subset and footprint compatible with prior generation FL-S, FL-K, and FL-P families. However, the
power supply and interface voltages are nominal 1.8 V.
Notes:
1. The 256B program page option only for 128-Mb and 256-Mb density FL-S devices.
2. The FL-P column indicates FL129P MIO SPI device (for 128-Mb densit y), FL128P does not support MIO, OTP, or 4-kB sectors.
3. 64-kB Sector Erase option only for 128-Mb/256-Mb density FL-P, FL-S and FS-S devices.
4. The FL-K family devices can erase 4-kB sectors in groups of 32 kB or 64 kB.
5. 512-Mb/1-Gb FL-S devices support 256-kB sector only.
6. Only 128-Mb/256-Mb density FL-S devices have 4-kB paramet er sector option.
7. Refer to individual data sheets for further details.
Table 5. Cypress SPI Families Comparison
Parameter FS-S FL-S FL-K FL-P
Technology Node 65 nm 65 nm 90 nm 90 nm
Architecture MirrorBit Eclipse MirrorBit Eclipse Floating Gate MirrorBit
Density 128 Mb, 256 Mb 128 Mb, 256 Mb, 512 Mb, 1
Gb 4 Mb - 128 Mb 32 Mb - 256 Mb
Bus Width x1, x2, x4 x1, x2, x4 x1, x2, x4 x1, x2, x4
Supply Voltage 1.7 V–2.0 V 2.7 V–3.6 V / 1.65 V–3.6 V
VIO 2.7 V–3.6 V 2.7 V–3.6 V
Normal Read Speed (SDR) 6 MB/s (50 MHz) 6 MB/s (50 MHz) 6 MB/s (50 MHz) 6 MB/s (40 MHz)
Fast Read Speed (SDR) 16.5 MB/s (133 MHz) 17 MB/s (133 MHz) 13 MB/s (104 MHz) 13 MB/s (104 MHz)
Dual Read Speed (SDR) 33 MB/s (133 MHz) 26 MB/s (104 MHz) 26 MB/s (104 MHz) 20 MB/s (80 MHz)
Quad Read Speed (SDR) 66 MB/s (133 MHz) 52 MB/s (104 MHz) 52 MB/s (104 MHz) 40 MB/s (80 MHz)
Quad Read Speed (DDR) 80 MB/s (80 MHz) 80 MB/s (80 MHz)
Program Buffer Size 256B / 512B 256B / 512B 256B 256B
Erase Sector Size 64 kB / 256 kB 64 kB / 256 kB 4 kB / 32 kB / 64 kB 64 kB / 256 kB
Parameter Sector Size 4 kB (option) 4 kB (option) 4 kB 4 kB
Sector Erase Rate (typ.) 500 kB/s 500 kB/s 136 kB/s (4 kB)
437 kB/s (64 kB) 130 kB/s
Page Programming Rate
(typ.)
0.71 MB/s (256B)
1.08 MB/s (512B)
1.2 MB/s (256B)
1.5 MB/s (512B) 365 kB/s 170 kB/s
OTP 1024B 1024B 768B (3x256B) 506B
Advanced Sector
Protection Yes Yes No No
Auto Boot Mode No Yes No No
Erase Suspend/Resume Yes Yes Yes No
Program Suspend/Resume Yes Yes Yes No
Deep Power-Down Yes No Yes Yes
Operating Temperature –40 °C to +85 °C / +105 °C
/ +125 °C –40 °C to +85 °C / +105 °C –40 °C to +85 °C –40 °C to +85 °C / +105 °C
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1.2.2 Known Differences from Prior Generations
1.2.2.1 Error Reporting
FL-K and FL-P memories either do not have error status bits or do not set them if program or erase is attempted on a protected
sector. The FS-S and FL-S families do have error reporting status bits for program and erase operations. These can be set when
there is an internal failure to program or erase, or when there is an attempt to program or erase a protected sector. In these cases
the program or erase operation did not complete as requested by the command. The P_ERR or E_ERR bits and the WIP bit will be
set to and remain 1 in SR1V. The clear Status Register command must be sent to clear the errors and return the device to standby
state.
1.2.2.2 Secure Silicon Region (OTP)
The FS-S size and format (address map) of the One-Time Program area is different from FL-K and FL-P generations. The method
for protecting each portion of the OTP area is different. For additional details see Secure Silicon Region (OTP) on page 70.
1.2.2.3 Configuration Register Freeze Bit
The Configuration Register 1 Freeze bit CR1V[0], locks the state of the Block Protection bits (SR1NV[4:2] and SR1V[4:2]),
TBPARM_O bit (CR1NV[2]), and TBPROT_O bit (CR1NV[5]), as in prior generations. In the FS-S and FL-S families the Freeze bit
also locks the state of the Configuration Register 1 BPNV_O bit (CR1NV[3]), and the Secure Silicon Region (OTP) area.
1.2.2.4 Sector Erase Commands
The command for erasing a 4-kbyte sector is supported only for use on 4-kbyte parameter sectors at the top or bottom of the FS-S
device address space.
The command for erasing an 8-kbyte area (two 4-kbyte sectors) is not supported.
The command for erasing a 32-kbyte area (eight 4-kbyte sectors) is not supported.
The Sector Erase command (SE) for FS-S 64-kbyte sectors is supported when the configuration option for uniform 64-kbyte sector is
selected or, when the hybrid configuration option for 4-kbyte parameter sectors with 64-kbyte uniform sectors is used. When the
hybrid option is in use, the 64-kbyte erase command may be used to erase the 32-kbyte of address space adjacent to the group of
eight 4-kbyte sectors. The 64-kbyte erase command in this case is erasing the 64-kbyte sector that is partially overlaid by the group
of eight 4-kbyte sectors without affecting the 4-kbyte sectors. This provides erase control over the 32 kbytes of address space
without also forcing the erase of the 4-kbyte sectors. This is different behavior than implemented in the FL-S family. In the FL-S
family, the 64-kbyte Sector Erase command can be applied to a 64-kbyte block of 4-kbyte sectors to erase the entire block of
parameter sectors in a single operation. In the FS-S, the parameter sectors do not fill an entire 64-kbyte block so only the 4-kbyte
Parameter Sector Erase (20h) is used to erase parameter sectors.
The erase command for a 256-kbyte sector replaces the 64-kbyte erase command when the configuration option for 256-kbyte
uniform logical sectors is used.
1.2.2.5 Deep Power-Down
The Deep Power-Down (DPD) function is supported in the FS-S family of devices.
1.2.2.6 WRR Single Register Write
In some legacy SPI devices, a Write Registers (WRR) command with only one data byte would update Status Register 1 and clear
some bits in Configuration Register 1, including the Quad Mode bit. This could result in unintended exit from Quad Mode. The
S25FS-S family only updates Status Register 1 when a single data byte is provided. The Configuration Register 1 is not modified in
this case.
1.2.2.7 Other Legacy Commands Not Supported
Autoboot Related Commands
Bank Address Related Commands
Dual Output Read
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Quad Output Read
Quad Page Program (QPP) - replaced by Page Program in QPI Mode
DDR Fast Read
DDR Dual I/O Read
1.2.2.8 New Features
The FS-S family introduces new features to Cypress SPI category memories:
Single 1.8V power supply for core and I/O voltage.
Configurable initial read latency (number of dummy cycles) for faster initial access time or higher clock rate read commands
Quad Peripheral Interface (QPI, 4-4-4) read mode in which all transfers are 4 bits wide, including instructions
JEDEC JESD216 standard, Serial Flash Discoverable Parameters (SFDP) that provide device feature and configuration
information.
Evaluate Erase Status command to determine if the last erase operation on a sector completed successfully. This command can
be used to detect incomplete erase due to power loss or other causes. This command can be helpful to Flash File System software
in file system recovery after a power loss.
Advanced Sector Protection (ASP) Permanent Protection. A bit is added to the ASP register to provide the option to make
protection of the Persistent Protection Bits (PPB) permanent. Also, when one of the two ASP protection modes is selected, all OTP
configuration bits in all registers are protected from further programming so that all OTP configuration settings are made permanent.
The OTP address space is not protected by the selection of an ASP protection mode. The Freeze bit (CR1V[0]) may be used to
protect the OTP Address Space.
1.3 Glossary
BCD
(Binary Coded Decimal) A value in which each 4-bit nibble represents a decimal numeral.
Command
All information transferred between the host system and memory during one period while CS# is low. This
includes the instruction (sometimes called an operation code or opcode) and any required address, mode
bits, latency cycles, or data.
DDP
(Dual Die Package)
Two die stacked within the same package to increase the memory capacity of a single package. Often also
referred to as a Multi-Chip Package (MCP).
DDR
(Double Data Rate) When input and output are latched on every edge of SCK.
ECC ECC Unit = 16 byte aligned and length data groups in the main Flash array and OTP array, each of which has
its own hidden ECC syndrome to enable error correction on each group.
Flash The name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases large
blocks of memory bits in parallel, making the erase operation much faster than early EEPROM.
High A signal voltage level ≥ VIH or a logic level representing a binary one (1).
Instruction
The 8-bit code indicating the function to be performed by a command (sometimes called an operation code or
opcode). The instruction is always the first 8 bits transferred from host system to the memory in any
command.
Low A signal voltage level VIL or a logic level representing a binary zero (0).
LSB
(Least Significant Bit)
Generally the right most bit, with the lowest order of magnitude value, within a group of bits of a register or
data value.
MSB
(Most Significant Bit)
Generally the left most bit, with the highest order of magnitude value, within a group of bits of a register or
data value.
N/A
(Not Applicable) A value is not relevant to situation described.
Non-Volatile No power is needed to maintain data stored in the memory.
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1.4 Other Resources
1.4.1 Cypress Flash Memory Roadmap
www.cypress.com/Flash-Roadmap
1.4.2 Links to Software
www.cypress.com/software-and-drivers-cypress-flash-memory
1.4.3 Links to Application Notes
www.cypress.com/cypressappnotes
OPN Ordering Part Number. The alphanumeric string specifying the memory device type, density, package, factory
non-volatile configuration, etc. used to select the desired device.
Page 512-byte or 256-byte aligned and length group of data. The size assigned for a page depends on the
Ordering Part Number.
PCB Printed Circuit Board.
Register Bit References Are in the format: Register_name[bit_number] or Register_name[bit_range_MSB: bit_range_LSB]
SDR
(Single Data Rate) When input is latched on the rising edge and output on the falling edge of SCK.
Sector Erase unit size; depending on device model and sector location this may be 4 kbytes, 64 kbytes or 256
kbytes.
Write
An operation that changes data within volatile or non-volatile registers bits or non-volatile flash memory.
When changing non-volatile data, an erase and reprogramming of any unchanged non-volatile data is done,
as part of the operation, such that the non-volatile data is modified by the write operation, in the same way
that volatile data is modified – as a single operation. The non-volatile data appears to the host system to be
updated by the single write command, without the need for separate commands for erase and reprogram of
adjacent, but unaffected data.
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Hardware Interface
Serial Peripheral Interface with Multiple Input / Output (SPI-MIO)
Many memory devices connect to their host system with separate parallel control, address, and data signals that require a large
number of signal connections and larger package size. The large number of connections increase power consumption due to so
many signals switching and the larger package increases cost.
The S25FS-S family reduces the number of signals for connection to the host system by serially transferring all control, address, and
data information over 4 to 6 signals. This reduces the cost of the memory package, reduces signal switching power, and either
reduces the host connection count or frees host connectors for use in providing other features.
The S25FS-S family uses the industry standard single-bit Serial Peripheral Interface (SPI) and also supports optional extension
commands for 2-bit (Dual) and 4-bit (Quad) wide serial transfers. This multiple width interface is called SPI Multi-I/O or SPI-MIO.
2. Signal Descriptions
2.1 Input/Output Summary
Table 6. Signal List
Signal Name Type Description
SCK Input Serial Clock.
CS# Input Chip Select.
SI / IO0 I/O Serial Input for single bit data commands or IO0 for Dual or Quad commands.
SO / IO1 I/O Serial Output for single bit data commands. IO1 for Dual or Quad commands.
WP# / IO2 I/O
Write Protect when not in Quad Mode (CR1V[1] = 0 and SR1NV[7] = 1).
IO2 when in Quad Mode (CR1V[1] = 1).
The signal has an internal pull-up resistor and may be left unconnected in the host system if not used for
Quad commands or write protection. If write protection is enabled by SR1NV[7] = 1 and CR1V[1] = 0, the host
system is required to drive WP# high or low during a WRR or WRAR command.
IO3 / RESET# I/O
IO3 in Quad-I/O mode, when Configuration Register 1 QUAD bit, CR1V[1] =1, and CS# is low.
RESET# when enabled by CR2V[5]=1 and not in Quad-I/O mode, CR1V[1] = 0, or when enabled in Quad
Mode, CR1V[1] = 1 and CS# is high.
The signal has an internal pull-up resistor and may be left unconnected in the host system if not used for
Quad commands or RESET#.
VCC Supply Power Supply.
VSS Supply Ground.
NC Unused
Not Connected. No device internal signal is connected to the package connector nor is there any future plan
to use the connector for a signal. The connection may safely be used for routing space for a signal on a
Printed Circuit Board (PCB). However, any signal connected to an NC must not have voltage levels higher
than VCC.
RFU Reserved
Reserved for Future Use. No device internal signal is currently connected to the package connector but
there is potential future use of the connector for a signal. It is recommended to not use RFU connectors for
PCB routing channels so that the PCB may take advantage of future enhanced features in compatible
footprint devices.
DNU Reserved
Do Not Use. A device internal signal may be connected to the package connector. The connection may be
used by Cypress for test or other purposes and is not intended for connection to any host system signal. Any
DNU signal related function will be inactive when the signal is at VIL. The signal has an internal pull-down
resistor and may be left unconnected in the host system or may be tied to VSS. Do not use these connections
for PCB signal routing channels. Do not connect any host system signal to this connection.
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2.2 Multiple Input / Output (MIO)
Traditional SPI single bit wide commands (Single or SIO) send information from the host to the memory only on the Serial Input (SI)
signal. Data may be sent back to the host serially on the Serial Output (SO) signal.
Dual or Quad Input / Output (I/O) commands send instructions to the memory only on the SI/IO0 signal. Address or data is sent from
the host to the memory as bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host
similarly as bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
QPI Mode transfers all instructions, address, and data from the host to the memory as four bit (nibble) groups on IO0, IO1, IO2, and
IO3. Data is returned to the host similarly as four bit (nibble) groups on IO0, IO1, IO2, and IO3.
2.3 Serial Clock (SCK)
This input signal provides the synchronization reference for the SPI interface. Instructions, addresses, or data input are latched on
the rising edge of the SCK signal. Data output changes after the falling edge of SCK, in SDR commands, and after every edge in
DDR commands.
2.4 Chip Select (CS#)
The Chip Select signal indicates when a command is transferring information to or from the device and the other signals are relevant
for the memory device.
When the CS# signal is at the logic high state, the device is not selected and all input signals are ignored and all output signals are
high impedance. The device will be in the Standby Power mode, unless an internal embedded operation is in progress. An
embedded operation is indicated by the Status Register 1 Write-In-Progress bit (SR1V[1]) set to 1, until the operation is completed.
Some example embedded operations are: Program, Erase, or Write Registers (WRR) operations.
Driving the CS# input to the logic low state enables the device, placing it in the Active Power mode. After power-up, a falling edge on
CS# is required prior to the start of any command.
2.5 Serial Input (SI) / IO0
This input signal is used to transfer data serially into the device. It receives instructions, addresses, and data to be programmed.
Values are latched on the rising edge of serial SCK clock signal.
SI becomes IO0 - an input and output during Dual and Quad commands for receiving instructions, addresses, and data to be
programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK, in
SDR commands, and on every edge of SCK, in DDR commands).
2.6 Serial Output (SO) / IO1
This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial SCK clock
signal.
SO becomes IO1 - an input and output during Dual and Quad commands for receiving addresses, and data to be programmed
(values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK, in SDR commands,
and on every edge of SCK, in DDR commands).
2.7 Write Protect (WP#) / IO2
When WP# is driven Low (VIL), during a WRR or WRAR command and while the Status Register Write Disable (SRWD_NV) bit of
Status Register 1 (SR1NV[7]) is set to a 1, it is not possible to write to Status Register 1 or Configuration Register 1 related registers.
In this situation, a WRR command is ignored, a WRAR command selecting SR1NV, SR1V, CR1NV, or CR1V is ignored, and no
error is set.
This prevents any alteration of the Block Protection settings. As a consequence, all the data bytes in the memory area that are
protected by the Block Protection feature are also hardware protected against data modification if WP# is Low during a WRR or
WRAR command with SRWD_NV set to 1.
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The WP# function is not available when the Quad Mode is enabled (CR1V[1] = 1). The WP# function is replaced by IO2 for input and
output during Quad Mode for receiving addresses, and data to be programmed (values are latched on rising edge of the SCK signal)
as well as shifting out data (on the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands).
WP# has an internal pull-up resistance; when unconnected, WP# is at VIH and may be left unconnected in the host system if not
used for Quad Mode or protection.
2.8 IO3 / RESET#
IO3 is used for input and output during Quad Mode (CR1V[1] = 1) for receiving addresses, and data to be programmed (values are
latched on rising edge of the SCK signal) as well as shifting out data (on the falling edge of SCK, in SDR commands, and on every
edge of SCK, in DDR commands).
The IO3 / RESET# signal may also be used to initiate the hardware reset function when the reset feature is enabled by writing
Configuration Register 2 non-volatile bit 5 (CR2V[5] = 1). The input is only treated as RESET# when the device is not in Quad-I/O
mode, CR1V[1] = 0, or when CS# is high. When Quad I/O mode is in use, CR1V[1]=1, and the device is selected with CS# low, the
IO3 / RESET# is used only as IO3 for information transfer. When CS# is high, the IO3 / RESET# is not in use for information transfer
and is used as the RESET# input. By conditioning the reset operation on CS# high during Quad Mode, the reset function remains
available during Quad Mode.
When the system enters a reset condition, the CS# signal must be driven high as part of the reset process and the IO3 / RESET#
signal is driven low. When CS# goes high the IO3 / RESET# input transitions from being IO3 to being the RESET# input. The reset
condition is then detected when CS# remains high and the IO3 / RESET# signal remains low for tRP. If a reset is not intended, the
system is required to actively drive IO3 / Reset# to high along with CS# being driven high at the end of a transfer of data to the
memory. Following transfers of data to the host system, the memory will drive IO3 high during tCS. This will ensure that IO3 / Reset
is not left floating or being pulled slowly to high by the internal or an external passive pull-up. Thus, an unintended reset is not
triggered by the IO3 / RESET# not being recognized as high before the end of tRP.
The IO3 / RESET# signal is unused when the reset feature is disabled (CR2V[5] = 0).
The IO3 / RESET# signal has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad Mode
or the reset function. The internal pull-up will hold IO3 / RESET high after the host system has actively driven the signal high and
then stops driving the signal.
Note that IO3 / RESET# cannot be shared by more than one SPI-MIO memory if any of them are operating in Quad I/O mode as IO3
being driven to or from one selected memory may look like a reset signal to a second non-selected memory sharing the same
IO3 / RESET# signal.
2.9 Voltage Supply (VCC)
VCC is the voltage source for all device internal logic. It is the single voltage used for all device internal functions including read,
program, and erase.
2.10 Supply and Signal Ground (VSS)
VSS is the common voltage drain and ground reference for the device core, input signal receivers, and output drivers.
2.11 Not Connected (NC)
No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The
connection may safely be used for routing space for a signal on a Printed Circuit Board (PCB).
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2.12 Reserved for Future Use (RFU)
No device internal signal is currently connected to the package connector but there is potential future use of the connector. It is
recommended to not use RFU connectors for PCB routing channels so that the PCB may take advantage of future enhanced
features in compatible footprint devices.
2.13 Do Not Use (DNU)
A device internal signal may be connected to the package connector. The connection may be used by Cypress for test or other
purposes and is not intended for connection to any host system signal. Any DNU signal related function will be inactive when the
signal is at VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS.
Do not use these connections for PCB signal routing channels. Do not connect any host system signal to these connections.
2.14 Block Diagrams
Figure 1. Bus Master and Memory Devices on the SPI Bus — Single Bit Data Path
SPI
Bus Master
RESET#
WP#
SO
SI
SCK
CS2#
CS1#
FS-S
Flash
FS-S
Flash
RESET#
WP#
SO
SI
SCK
CS2#
CS1#
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Figure 2. Bus Master and Memory Devices on the SPI Bus — Dual Bit Data Path
Figure 3. Bus Master and Memory Devices on the SPI Bus — Quad Bit Data Path
SPI
Bus Master
RESET#
WP#
IO1
IO0
SCK
CS2#
CS1#
FS-S
Flash
FS-S
Flash
RESET#
WP#
IO0
IO1
SCK
CS2#
CS1#
SPI
Bus Master
IO3 / RESET#
IO2
IO1
IO0
SCK
CS1#
FS-S
Flash
RESET# / IO3
IO2
IO0
IO1
SCK
CS1#
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3. Signal Protocols
3.1 SPI Clock Modes
3.1.1 Single Data Rate (SDR)
The S25FS-S family can be driven by an embedded microcontroller (bus master) in either of the two following clocking modes.
Mode 0 with Clock Polarity (CPOL) = 0 and, Clock Phase (CPHA) = 0
Mode 3 with CPOL = 1 and, CPHA = 1
For these two modes, input data into the device is always latched in on the rising edge of the SCK signal and the output data is
always available from the falling edge of the SCK clock signal.
The difference between the two modes is the clock polarity when the bus master is in standby mode and not transferring any data.
SCK will stay at logic low state with CPOL = 0, CPHA = 0
SCK will stay at logic high state with CPOL = 1, CPHA = 1
Figure 4. SPI SDR Modes Supported
Timing diagrams throughout the remainder of the document are generally shown as both Mode 0 and 3 by showing SCK as both
high and low at the fall of CS#. In some cases a timing diagram may show only Mode 0 with SCK low at the fall of CS#. In such a
case, Mode 0 timing simply means the clock is high at the fall of CS# so no SCK rising edge set up or hold time to the falling edge of
CS# is needed for Mode 0.
SCK cycles are measured (counted) from one falling edge of SCK to the next falling edge of SCK. In Mode 0 the beginning of the
first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge of SCK because SCK is already low
at the beginning of a command.
3.1.2 Double Data Rate (DDR)
Mode 0 and Mode 3 are also supported for DDR commands. In DDR commands, the instruction bits are always latched on the rising
edge of clock, the same as in SDR commands. However, the address and input data that follow the instruction are latched on both
the rising and falling edges of SCK. The first address bit is latched on the first rising edge of SCK following the falling edge at the end
of the last instruction bit. The first bit of output data is driven on the falling edge at the end of the last access latency (dummy) cycle.
SCK cycles are measured (counted) in the same way as in SDR commands, from one falling edge of SCK to the next falling edge of
SCK. In Mode 0 the beginning of the first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge
of SCK because SCK is already low at the beginning of a command.
CPOL=0_CPHA=0_SCK
CPOL=1_CPHA=1_SCK
CS#
SI
SO
MSB
MSB
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Figure 5. SPI DDR Modes Supported
3.2 Command Protocol
All communication between the host system and S25FS-S family memory devices is in the form of units called commands.
All commands begin with an 8-bit instruction that selects the type of information transfer or device operation to be performed.
Commands may also have an address, instruction modifier, latency period, data transfer to the memory, or data transfer from the
memory. All instruction, address, and data information is transferred sequentially between the host system and memory device.
Command protocols are also classified by a numerical nomenclature using three numbers to reference the transfer width of three
command phases:
instruction
address and instruction modifier (Continuous Read mode bits)
data
Single bit wide commands start with an instruction and may provide an address or data, all sent only on the SI signal. Data may be
sent back to the host serially on the SO signal. This is referenced as a 1-1-1 command protocol for single bit width instruction, single
bit width address and modifier, single bit data.
Dual or Quad Input / Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or, four bit (nibble)
groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0,
IO1, IO2, and IO3. This is referenced as 1-2-2 for Dual I/O and 1-4-4 for Quad I/O command protocols.
The S25FS-S family also supports a QPI Mode in which all information is transferred in 4-bit width, including the instruction, address,
modifier, and data. This is referenced as a 4-4-4 command protocol.
Commands are structured as follows:
Each command begins with CS# going low and ends with CS# returning high. The memory device is selected by the host driving
the Chip Select (CS#) signal low throughout a command.
The Serial Clock (SCK) marks the transfer of each bit or group of bits between the host and memory.
Each command begins with an 8-bit (byte) instruction. The instruction selects the type of information transfer or device operation
to be performed. The instruction transfers occur on SCK rising edges. However, some read commands are modified by a prior read
command, such that the instruction is implied from the earlier command. This is called Continuous Read mode. When the device is
in Continuous Read mode, the instruction bits are not transmitted at the beginning of the command because the instruction is the
same as the read command that initiated the Continuous Read mode. In Continuous Read mode the command will begin with the
read address. Thus, Continuous Read mode removes eight instruction bits from each read command in a series of same type read
commands.
The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces
in the device. The instruction determines the address space used. The address may be either a 24-bit or a 32-bit, byte boundary,
address. The address transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands.
In legacy SPI mode, the width of all transfers following the instruction are determined by the instruction sent. Following transfers
may continue to be single bit serial on only the SI or Serial Output (SO) signals, they may be done in two bit groups per (dual)
transfer on the IO0 and IO1 signals, or they may be done in 4-bit groups per (quad) transfer on the IO0-IO3 signals. Within the dual
or quad groups the least significant bit is on IO0. More significant bits are placed in significance order on each higher numbered IO
signal. Single bits or parallel bit groups are transferred in most to least significant bit order.
In QPI Mode, the width of all transfers is a 4-bit wide (Quad) transfer on the IO0-IO3 signals.
CPOL=0_CPHA=0_SCK
CPOL=1_CPHA=1_SCK
CS#
Transfer_Phase
SI
SO
Inst. 7 Inst. 0 A31 A30 A0 M7 M6 M0
DLP7 DLP0 D0 D1
Dummy / DLPAddress ModeInstruction
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Dual and Quad I/O read instructions send an instruction modifier called Continuous Read mode bits, following the address, to
indicate whether the next command will be of the same type with an implied, rather than an explicit, instruction. These mode bits
initiate or end the Continuous Read mode. In Continuous Read mode, the next command thus does not provide an instruction byte,
only a new address and mode bits. This reduces the time needed to send each command when the same command type is repeated
in a sequence of commands. The mode bit transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR
commands.
The address or mode bits may be followed by write data to be stored in the memory device or by a read latency period before
read data is returned to the host.
Write data bit transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands.
SCK continues to toggle during any read access latency period. The latency may be zero to several SCK cycles (also referred to
as dummy cycles). At the end of the read latency cycles, the first read data bits are driven from the outputs on SCK falling edge at
the end of the last read latency cycle. The first read data bits are considered transferred to the host on the following SCK rising edge.
Each following transfer occurs on the next SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands.
If the command returns read data to the host, the device continues sending data transfers until the host takes the CS# signal high.
The CS# signal can be driven high after any transfer in the read data sequence. This will terminate the command.
At the end of a command that does not return data, the host drives the CS# input high. The CS# signal must go high after the
eighth bit, of a stand alone instruction or, of the last write data byte that is transferred. That is, the CS# signal must be driven high
when the number of bits after the CS# signal was driven low is an exact multiple of eight bits. If the CS# signal does not go high
exactly at the eight bit boundary of the instruction or write data, the command is rejected and not executed.
All instruction, address, and mode bits are shifted into the device with the Most Significant Bits (MSB) first. The data bits are
shifted in and out of the device MSB first. All data is transferred in byte units with the lowest address byte sent first. The following
bytes of data are sent in lowest to highest byte address order i.e. the byte address increments.
All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The
embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an embedded
operation. These are discussed in the individual command descriptions.
Depending on the command, the time for execution varies. A command to read status information from an executing command is
available to determine when the command completes execution and whether the command was successful.
3.2.1 Command Sequence Examples
Figure 6. Stand Alone Instruction Command
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
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Figure 7. Single Bit Wide Input Command
Figure 8. Single Bit Wide Output Command
Figure 9. Single Bit Wide I/O Command without Latency
Figure 10. Single Bit Wide I/O Command with Latency
Figure 11. Dual I/O Command
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Data
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Data 1 Data 2
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 31 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Data 1 Data 2
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 30 2 0 6 4 2 0 6 4 2 0 6 4 2 0
31 3 1 7 5 3 1 7 5 3 1 7 5 3 1
Instruction Address Mode Dum Data 1 Data 2
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Figure 12. Quad I/O Command
Figure 13. Quad I/O Read Command in QPI Mode
Figure 14. DDR Quad I/O Read
Figure 15. DDR Quad I/O Read in QPI Mode
Additional sequence diagrams, specific to each command, are provided in Commands onpage78.
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7 6 5 4 3 2 1 0 28 4 0 4 0 4 0 4 0 4 0 4 0
29 5 1 5 1 5 1 5 1 5 1 5 1
30 6 2 6 2 6 2 6 2 6 2 6 2
31 7 3 7 3 7 3 7 3 7 3 7 3
Instruction Address Mode Dummy D1 D2 D3 D4
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 28 4 0 4 0 4 0 4 0 4 0 4 0
5 1 29 5 1 5 1 5 1 5 1 5 1 5 1
6 2 30 6 2 6 2 6 2 6 2 6 2 6 2
7 3 31 7 3 7 3 7 3 7 3 7 3 7 3
Instruct. Address Mode Dummy D1 D2 D3 D4
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7 6 5 4 3 2 1 0 28 24 20 16 12 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0
29 25 21 17 13 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1
30 26 22 18 14 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2
31 27 23 19 15 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3
Instruction Address Mode Dummy DLP D1 D2
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 28 24 20 16 12 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0
5 1 29 25 21 17 13 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1
6 2 30 26 22 18 14 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2
7 3 31 27 23 19 15 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3
Instruct. Address Mode Dummy DLP D1 D2
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3.3 Interface States
This section describes the input and output signal levels as related to the SPI interface behavior.
Legend
Z = No driver - floating signal
HL = Host driving VIL
HH = Host driving VIH
HV = Either HL or HH
X = HL or HH or Z
HT = Toggling between HL and HH
ML = Memory driving VIL
MH = Memory driving VIH
MV = Either ML or MH
3.3.1 Power-Off
When the core supply voltage is at or below the VCC (Low) voltage, the device is considered to be powered off. The device does not
react to external signals, and is prevented from performing any program or erase operation.
Table 7. Interface States Summary
Interface State VCC SCK CS# IO3 /
RESET# WP# / IO2 SO / IO1 SI / IO0
Power-Off <VCC (low)XXXXZX
Low-Power Hardware Data Protection <VCC (cut-off) X X X X Z X
Power-On (Cold) Reset Interface States
Summary ≥VCC (min) X HH X X Z X
Hardware (Warm) Reset Non-Quad Mode ≥VCC (min) X X HL X Z X
Hardware (Warm) Reset Quad Mode ≥VCC (min) X HH HL X Z X
Interface Standby ≥VCC (min) X HH X X Z X
Instruction Cycle (Legacy SPI) ≥VCC (min) HT HL HH HV Z HV
Single Input Cycle
Host to Memory Transfer ≥VCC (min) HT HL HH X Z HV
Single Latency (Dummy) Cycle ≥VCC (min) HT HL HH X Z X
Single Output Cycle
Memory to Host Transfer ≥VCC (min) HT HL HH X MV X
Dual Input Cycle
Host to Memory Transfer ≥VCC (min) HT HL HH X HV HV
Dual Latency (Dummy) Cycle ≥VCC (min) HT HL HH X X X
Dual Output Cycle
Memory to Host Transfer ≥VCC (min) HT HL HH X MV MV
Quad Input Cycle
Host to Memory Transfer ≥VCC (min)HTHLHVHVHVHV
Quad Latency (Dummy) Cycle ≥VCC (min) HT HL X X X X
Quad Output Cycle
Memory to Host Transfer ≥VCC (min)HT HL MVMVMVMV
DDR Quad Input Cycle
Host to Memory Transfer ≥VCC (min)HTHLHVHVHVHV
DDR Latency (Dummy) Cycle ≥VCC (min) HT HL MV or Z MV or Z MV or Z MV or Z
DDR Quad Output Cycle
Memory to Host Transfer ≥VCC (min)HT HL MVMVMVMV
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3.3.2 Low-Power Hardware Data Protection
When VCC is less than VCC (Cut-off) the memory device will ignore commands to ensure that program and erase operations can not
start when the core supply voltage is out of the operating range.
3.3.3 Power-On (Cold) Reset
When the core voltage supply remains at or below the VCC (Low) voltage for ≥ tPD time, then rises to ≥ VCC (Minimum) the device will
begin its Power-On Reset (POR) process. POR continues until the end of tPU. During tPU the device does not react to external input
signals nor drive any outputs. Following the end of tPU the device transitions to the Interface Standby state and can accept
commands. For additional information on POR see Power-On (Cold) Reset on page 30
3.3.4 Hardware (Warm) Reset
A configuration option is provided to allow IO3 to be used as a hardware reset input when the device is not in Quad Mode or when it
is in Quad Mode and CS# is high. When IO3 / RESET# is driven low for tRP time the device starts the hardware reset process. The
process continues for tRPH time. Following the end of both tRPH and the reset hold time following the rise of RESET# (tRH) the device
transitions to the Interface Standby state and can accept commands. For additional information on hardware reset see Reset
on page 30
3.3.5 Interface Standby
When CS# is high the SPI interface is in standby state. Inputs other than RESET# are ignored. The interface waits for the beginning
of a new command. The next interface state is Instruction Cycle when CS# goes low to begin a new command.
While in interface standby state the memory device draws standby current (ISB) if no embedded algorithm is in progress. If an
embedded algorithm is in progress, the related current is drawn until the end of the algorithm when the entire device returns to
standby current draw.
A Deep Power-Down (DPD) mode is supported by the FS-S family of devices. If the device has been placed in DPD mode by the
DPD (B9h) command, the interface standby current is IDPD. The DPD command is accepted only while the device is not performing
an embedded operation, as indicated by the Status Register-1 volatile Write In Progress (WIP) bit being cleared to zero
(SR1V[0]=0). While in DPD mode, the device ignores all commands except the Release from DPD (RES ABh) command, that will
return the device to the Interface Standby state after a delay of tRES.
3.3.6 Instruction Cycle (Legacy SPI Mode)
When the host drives the MSB of an instruction and CS# goes low, on the next rising edge of SCK the device captures the MSB of
the instruction that begins the new command. On each following rising edge of SCK the device captures the next lower significance
bit of the 8-bit instruction. The host keeps CS# low, and drives the Write Protect (WP#) and IO3/RESET signals as needed for the
instruction. However, WP# is only relevant during instruction cycles of a WRR or WRAR command and is otherwise ignored.
IO3/RESET# is driven high when the device is not in Quad Mode (CR1V[1] = 0) or QPI Mode (CR2V[6] = 0) and hardware reset is
not required.
Each instruction selects the address space that is operated on and the transfer format used during the remainder of the command.
The transfer format may be Single, Dual I/O, Quad I/O, or DDR Quad I/O. The expected next interface state depends on the
instruction received.
Some commands are stand alone, needing no address or data transfer to or from the memory. The host returns CS# high after the
rising edge of SCK for the eighth bit of the instruction in such commands. The next interface state in this case is Interface Standby.
3.3.7 Instruction Cycle (QPI Mode)
In QPI Mode, when CR2V[6]=1, instructions are transferred 4 bits per cycle. In this mode, instruction cycles are the same as a Quad
Input Cycle. See Quad Input Cycle - Host to Memory Transfer on page 21.
3.3.8 Single Input Cycle - Host to Memory Transfer
Several commands transfer information after the instruction on the single Serial Input (SI) signal from host to the memory device.
The host keeps RESET# high, CS# low, and drives SI as needed for the command. The memory does not drive the Serial Output
(SO) signal.
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The expected next interface state depends on the instruction. Some instructions continue sending address or data to the memory
using additional Single Input Cycles. Others may transition to Single Latency, or directly to Single, Dual, or Quad Output Cycle
states.
3.3.9 Single Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the Latency Code in the Configuration Register (CR2V[3:0]).
During the latency cycles, the host keeps RESET# high, CS# low. The Write Protect (WP#) signal is ignored. The host may drive the
SI signal during these cycles or the host may leave SI floating. The memory does not use any data driven on SI / I/O0 or other I/O
signals during the latency cycles. The memory does not drive the Serial Output (SO) or I/O signals during the latency cycles.
The next interface state depends on the command structure i.e. the number of latency cycles, and whether the read is single, dual,
or quad width.
3.3.10 Single Output Cycle - Memory to Host Transfer
Several commands transfer information back to the host on the single Serial Output (SO) signal. The host keeps RESET# high, CS#
low. The Write Protect (WP#) signal is ignored. The memory ignores the Serial Input (SI) signal. The memory drives SO with data.
The next interface state continues to be Single Output Cycle until the host returns CS# to high ending the command.
3.3.11 Dual Input Cycle - Host to Memory Transfer
The Read Dual I/O command transfers two address or mode bits to the memory in each cycle. The host keeps RESET# high, CS#
low. The Write Protect (WP#) signal is ignored. The host drives address on SI / IO0 and SO / IO1.
The next interface state following the delivery of address and mode bits is a Dual Latency Cycle if there are latency cycles needed or
Dual Output Cycle if no latency is required.
3.3.12 Dual Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the Latency Code in the Configuration Register (CR2V[3:0]).
During the latency cycles, the host keeps RESET# high, CS# low. The Write Protect (WP#) signal is ignored. The host may drive the
SI / IO0 and SO / IO1 signals during these cycles or the host may leave SI / IO0 and SO / IO1 floating. The memory does not use
any data driven on SI / IO0 and SO / IO1 during the latency cycles. The host must stop driving SI / IO0 and SO / IO1 on the falling
edge at the end of the last latency cycle. It is recommended that the host stop driving them during all latency cycles so that there is
sufficient time for the host drivers to turn off before the memory begins to drive at the end of the latency cycles. This prevents driver
conflict between host and memory when the signal direction changes. The memory does not drive the SI / IO0 and SO / IO1 signals
during the latency cycles.
The next interface state following the last latency cycle is a Dual Output Cycle.
3.3.13 Dual Output Cycle - Memory to Host Transfer
The Read Dual Output and Read Dual I/O return data to the host two bits in each cycle. The host keeps RESET# high, CS# low. The
Write Protect (WP#) signal is ignored. The memory drives data on the SI / IO0 and SO / IO1 signals during the Dual Output Cycles.
The next interface state continues to be Dual Output Cycle until the host returns CS# to high ending the command.
3.3.14 Quad Input Cycle - Host to Memory Transfer
The Quad I/O Read command transfers four address or mode bits to the memory in each cycle. In QPI Mode the Quad I/O Read and
Page Program commands transfer four data bits to the memory in each cycle, including the instruction cycles. The host keeps CS#
low, and drives the IO signals.
For Quad I/O Read the next interface state following the delivery of address and mode bits is a Quad Latency Cycle if there are
latency cycles needed or Quad Output Cycle if no latency is required. For QPI Mode Page Program, the host returns CS# high
following the delivery of data to be programmed and the interface returns to standby state.
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3.3.15 Quad Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the Latency Code in the Configuration Register (CR2V[3:0]).
During the latency cycles, the host keeps CS# low. The host may drive the IO signals during these cycles or the host may leave the
IO floating. The memory does not use any data driven on IO during the latency cycles. The host must stop driving the IO signals on
the falling edge at the end of the last latency cycle. It is recommended that the host stop driving them during all latency cycles so that
there is sufficient time for the host drivers to turn off before the memory begins to drive at the end of the latency cycles. This prevents
driver conflict between host and memory when the signal direction changes. The memory does not drive the IO signals during the
latency cycles.
The next interface state following the last latency cycle is a Quad Output Cycle.
3.3.16 Quad Output Cycle - Memory to Host Transfer
The Quad I/O Read returns data to the host four bits in each cycle. The host keeps CS# low. The memory drives data on IO0–IO3
signals during the Quad Output Cycles.
The next interface state continues to be Quad Output Cycle until the host returns CS# to high ending the command.
3.3.17 DDR Quad Input Cycle - Host to Memory Transfer
The DDR Quad I/O Read command sends address, and mode bits to the memory on all the IO signals. Four bits are transferred on
the rising edge of SCK and four bits on the falling edge in each cycle. The host keeps CS# low.
The next interface state following the delivery of address and mode bits is a DDR Latency Cycle.
3.3.18 DDR Latency Cycle
DDR Read commands may have one to several latency cycles during which read data is read from the main flash memory array
before transfer to the host. The number of latency cycles are determined by the Latency Code in the Configuration Register
(CR2V[3:0]). During the latency cycles, the host keeps CS# low. The host may not drive the IO signals during these cycles. So that
there is sufficient time for the host drivers to turn off before the memory begins to drive. This prevents driver conflict between host
and memory when the signal direction changes. The memory has an option to drive all the IO signals with a Data Learning Pattern
(DLP) during the last 4 latency cycles. The DLP option should not be enabled when there are fewer than five latency cycles so that
there is at least one cycle of high impedance for turn around of the IO signals before the memory begins driving the DLP. When
there are more than 4 cycles of latency the memory does not drive the IO signals until the last four cycles of latency.
The next interface state following the last latency cycle is a DDR Single, or Quad Output Cycle, depending on the instruction.
3.3.19 DDR Quad Output Cycle - Memory to Host Transfer
The DDR Quad I/O Read command returns bits to the host on all the IO signals. Four bits are transferred on the rising edge of SCK
and four bits on the falling edge in each cycle. The host keeps CS# low.
The next interface state continues to be DDR Quad Output Cycle until the host returns CS# to high ending the command.
3.4 Configuration Register Effects on the Interface
The Configuration Register 2 volatile bits 3 to 0 (CR2V[3:0]) select the variable latency for all array read commands except Read
and Read SDFP (RSFDP). Read always has zero latency cycles. RSFDP always has 8 latency cycles. The variable latency is also
used in the OTPR, ECCRD, and RDAR commands.
The Configuration Register bit 1 (CR1V[1]) selects whether Quad Mode is enabled to switch WP# to IO2 function, RESET# to IO3
function, and thus allow Quad I/O Read and QPI Mode commands. Quad Mode must also be selected to allow DDR Quad I/O Read
commands.
3.5 Data Protection
Some basic protection against unintended changes to stored data are provided and controlled purely by the hardware design. These
are described below. Other software managed protection methods are discussed in the software section of this document.
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3.5.1 Power-Up
When the core supply voltage is at or below the VCC (Low) voltage, the device is considered to be powered off. The device does not
react to external signals, and is prevented from performing any program or erase operation. Program and erase operations continue
to be prevented during the Power-On Reset (POR) because no command is accepted until the exit from POR to the Interface
Standby state.
3.5.2 Low Power
When VCC is less than VCC (Cut-off) the memory device will ignore commands to ensure that program and erase operations can not
start when the core supply voltage is out of the operating range.
3.5.3 Clock Pulse Count
The device verifies that all non-volatile memory and register data modifying commands consist of a clock pulse count that is a
multiple of eight bit transfers (byte boundary) before executing them. A command not ending on an 8-bit (byte) boundary is ignored
and no error status is set for the command.
3.5.4 Deep Power-Down (DPD)
In DPD mode, the device responds only to the Release from DPD command (RES ABh). All other commands are ignored during
DPD mode, thereby protecting the memory from program and erase operations.
4. Electrical Specifications
4.1 Absolute Maximum Ratings
Notes:
1. See Section 4.4.3, Input Signal Overshoot on page 24 for allowed maximums during signal transition.
2. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
3. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rat i ng only; functional operation of the
device at these or an y ot her co nditions above th ose indicated in the operational sectio ns of this d ata sheet is not implied. E xposure of the device to absolute maximum
rating conditions for extended periods may affect device reliability.
4.2 Thermal Resistance
Table 8. Absolute Maximum Ratings
Storage Temperature Plastic Packages –65 °C to +150 °C
Ambient Temperature with Power Applied –65 °C to +125 °C
VCC –0.5 V to +2.5 V
Input voltage with respect to Ground (VSS) (Note 1) –0.5 V to VCC + 0.5 V
Output Short Circuit Current (Note 2) 100 mA
Table 9. Thermal Resistance
Parameter Description SOC008 WND008 FAB024 FAC024 Unit
Theta JA Thermal resistance (junction to
ambient) 75 18 39 39 °C
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4.3 Latch-Up Characteristics
Note:
1. Excludes power supply VCC. Test conditions: VCC = 1.8 V, one connection at a time tested, connections not being tested are at VSS.
4.4 Operating Ranges
Operating ranges define those limits between which the functionality of the device is guaranteed.
4.4.1 Power Supply Voltages
VCC ………………………………............................... 1.7 V to 2.0 V
4.4.2 Temperature Ranges
Note:
1. Industrial Plus operating and performa nce parameters will be determined by device characte rization and may vary from stand ard in dustrial te mperature rang e devices
as currently shown in this specification.
4.4.3 Input Signal Overshoot
During DC conditions, input or I/O signals should remain equal to or between VSS and VCC. During voltage transitions, inputs or I/Os
may overshoot VSS to -1.0V or overshoot to VCC + 1.0 V, for periods up to 20 ns.
Figure 16. Maximum Negative Overshoot Waveform
Table 10. Latch-Up Specification
Description Min Max Unit
Input voltage with respect to VSS on all input only connections -1.0 VCC + 1.0 V
Input voltage with respect to VSS on all I/O connections -1.0 VCC + 1.0 V
VCC Current -100 +100 mA
Parameter Symbol Device Spec
Unit
Min Max
Ambient Temperature TA
Industrial (I) -40 +85 °C
Industrial Plus (V) -40 +105 °C
Automotive, AEC-Q100 Grade 3 (A) -40 +85 °C
Automotive, AEC-Q100 Grade 2 (B) -40 +105 °C
Automotive, AEC-Q100 Grade 1 (M) -40 +125 °C
VSS to VCC
- 1.0V
≤ 20 ns
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Figure 17. Maximum Positive Overshoot Waveform
4.5 Power-Up and Power-Down
The device must not be selected at power-up or power-down (that is, CS# must follow the voltage applied on VCC) until VCC reaches
the correct value as follows:
VCC (min) at power-up, and then for a further delay of tPU
VSS at power-down
A simple pull-up resistor on Chip Select (CS#) can usually be used to insure safe and proper power-up and power-down.
The device ignores all instructions until a time delay of tPU has elapsed after the moment that VCC rises above the minimum VCC
threshold (see Figure 18). However, correct operation of the device is not guaranteed if VCC returns below VCC (min) during tPU. No
command should be sent to the device until the end of tPU.
The device draws IPOR during tPU. After power-up (tPU), the device is in Standby mode, draws CMOS standby current (ISB), and the
WEL bit is reset.
During power-down or voltage drops below VCC(cut-off), the voltage must drop below VCC(low) for a period of tPD for the part to
initialize correctly on power-up. See Figure 19. If during a voltage drop the VCC stays above VCC(cut-off) the part will stay initialized
and will work correctly when VCC is again above VCC(min). In the event Power-On Reset (POR) did not complete correctly after
power-up, the assertion of the RESET# signal or receiving a software reset command (RESET) will restart the POR process.
Normal precautions must be taken for supply rail decoupling to stabilize the VCC supply at the device. Each device in a system
should have the VCC rail decoupled by a suitable capacitor close to the package supply connection (this capacitor is generally of the
order of 0.1 µF).
Table 11. FS-S Power-Up / Power-Down Voltage and Timing
Symbol Parameter Min Max Unit
VCC (min) VCC (minimum operation voltage) 1.7 V
VCC (cut-off) VCC (Cut 0ff where re-initialization is needed) 1.5 V
VCC (low) VCC (low voltage for initialization to occur) 0.7 V
tPU V
CC(min) to Read operation 300 µs
tPD V
CC(low) time 10.0 µs
VCC + 1.0V
≤ 20 ns
VSS to VCC
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Figure 18. Power-Up
Figure 19. Power-Down and Voltage Drop
tPU Full Device Access
VCC (Min)
VCC (Max)
Time
V
CC
(Max)
V
CC
(Min)
V
CC
(Cut-off)
V
CC
(Low)
tPU Device
Access Allowed
No Device Access Allowed
tPD
Time
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4.6 DC Characteristics
Applicable within operating ranges.
Notes:
1. Typical values are at TAI = 25 °C and VCC = 1.8 V.
2. Outputs unconnected during read data return. Output switching current is not included.
Table 12. FS-S DC Characteristics
Symbol Parameter Test Conditions Min Typ (1) Max Unit
VIL Input Low Voltage -0.5 0.3xVDD V
VIH Input High Voltage 0.7xVDD V
CC+0.4 V
VOL Output Low Voltage IOL = 0.1 mA 0.2 V
VOH Output High Voltage IOH = –0.1 mA VCC - 0.2 V
ILI Input Leakage Current VCC = VCC Max, VIN = VIH or VSS, CS# = VIH ±2 µA
ILO Output Leakage Current VCC = VCC Max, VIN = VIH or VSS, CS# = VIH ±2 µA
ICC1 Active Power Supply Current (READ)
(2)
Serial SDR @ 50 MHz
Serial SDR @ 133 MHz
Quad SDR @ 133 MHz
Quad DDR @ 80 MHz
10
25
60
70
18
30
65
90
mA
ICC2
Active Power Supply Current (Page
Program) CS# = VCC 60 100 mA
ICC3 Active Power Supply Current (WRR
or WRAR) CS# = VCC 60 100 mA
ICC4 Active Power Supply Current (SE) CS# = VCC 60 100 mA
ICC5 Active Power Supply Current (BE) CS# = VCC 60 100 mA
ISB Standby Current IO3/RESET#, CS# = VCC; SI, SCK = VCC or VSS,
Industrial Temp/Automotive, AEC-Q100 Grade 3 25 100 µA
ISB Standby Current
IO3/RESET#, CS# = VCC; SI, SCK = VCC or VSS,
Industrial Plus Temp/Automotive, AEC-Q100
Grade 2
25 300 µA
ISB Standby Current IO3/RESET#, CS# = VCC; SI, SCK = VCC or VSS,
Automotive, AEC-Q100 Grade 1 25 300 µA
IDPD Deep Power-Down Current IO3/RESET#, CS# = VCC; SI, SCK = VCC or VSS,
Industrial Temp/Automotive, AEC-Q100 Grade 3 650µA
IDPD Deep Power-Down Current
IO3/RESET#, CS# = VCC; SI, SCK = VCC or VSS,
Industrial Plus Temp/Automotive, AEC-Q100
Grade 2
6 100 µA
IDPD Deep Power-Down Current IO3/RESET#, CS# = VCC; SI, SCK = VCC or VSS,
Automotive, AEC-Q100 Grade 1 6 170 µA
IPOR Power-On Reset Current IO3/RESET#, CS# = VCC; SI,
SCK = VCC or VSS
80 mA
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4.6.1 Active Power and Standby Power Modes
The device is enabled and in the Active Power mode when Chip Select (CS#) is LOW. When CS# is HIGH, the device is disabled,
but may still be in an Active Power mode until all program, erase, and write operations have completed. The device then goes into
the Standby Power mode, and power consumption drops to ISB.
4.6.2 Deep Power Down Mode
A Deep Power Down (DPD) mode is supported by the S25FS-S Family devices. If the device has been placed in DPD mode by the
DPD (B9h) command, the interface standby current is (IDPD). The DPD command is accepted only while the device is not performing
an embedded algorithm as indicated by the Status Register-1 volatile Write In Progress (WIP) bit being cleared to zero (SR1V[0] =
0). While in DPD mode the device, ignores all commands except the Release from DPD (RES ABh) command, which will return the
device to the Interface Standby state after a delay of tRES.
Table 13. Valid Enter DPD mode and Release from DPD Mode Sequence
Current Mode CS# SCK Command Next Mode Comments
Active Low to High N/A N/A Standby
Standby High to Low Toggling B9h
Enter DPD DPD
DPD entered after CS# goes HIGH and
after the tDPD duration (see Table 17
on page 33)
DPD High to Low Not Toggling N/A DPD If SCK is toggling and Command is not
ABh, device remains in DPD
Toggling Command not ABh
DPD High to Low Toggling ABh
Release from DPD Standby
Release from DPD after CS# goes HIGH
and after the tRES duration (see Table 17
on page 33).
After CS# goes HIGH to start the release
from DPD, it is an invalid sequence to
have a CS# transition when the SCK is
not toggling.
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5. Timing Specifications
5.1 Key to Switching Waveforms
Figure 20. Waveform Element Meanings
5.2 AC Test Conditions
Figure 21. Test Setup
Notes:
1. Input slew rate measured from input pulse min to max at VCC max. Example: (1.9 V x 0.8) - (1.9 V x 0.2) = 1.14 V; 1.14 V/1.25 V/ns = 0.9 ns rise or fall time.
2. AC characteristics tables assu me clock and data signals have the same slew rate (slope).
Table 14. AC Measurement Conditions
Symbol Parameter Min Max Unit
CL
Load Capacitance 30 pF
Input Pulse Voltage 0.2 × VCC 0.8 × VCC V
Input Slew Rate 0.23 1.25 V/ns
Input Rise and Fall Times 0.9 5 ns
Input Timing Ref Voltage 0.5 × VCC V
Output Timing Ref Voltage 0.5 × VCC V
Input
Symbol
Output
Valid at logic high or low High Impedance Any change permitted Logic high Logic low
High Impedance Changing, state unknown Logic high Logic low
Valid at logic high or low
Device
Under
Test
CL
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Figure 22. Input, Output, and Timing Reference Levels
5.2.1 Capacitance Characteristics
Note:
1. Parameter values are not 100% test ed. For more details, please refer to the IBIS models.
5.3 Reset
5.3.1 Power-On (Cold) Reset
The device executes a Power-On Reset (POR) process until a time delay of tPU has elapsed after the moment that VCC rises above
the minimum VCC threshold. See Figure 18, Power-Up on page 26, and FS-S Power-Up / Power-Down Voltage and Timing
on page 25. The device must not be selected (CS# to go high with VCC) during power-up (tPU), i.e. no commands may be sent to the
device until the end of tPU.
The IO3 / RESET# signal functions as the RESET# input when CS# is high for more than tCS time or when Quad Mode is not
enabled CR1V[1] = 0.
RESET# is ignored during POR. If RESET# is low during POR and remains low through and beyond the end of tPU, CS# must
remain high until tRH after RESET# returns high. RESET# must return high for greater than tRS before returning low to initiate a
hardware reset.
Figure 23. Reset Low at the End of POR
Table 15. Capacitance
Parameter Test Conditions Min Max Unit
CIN Input Capacitance (applies to SCK, CS#, IO3/RESET#) 1 MHz 8 pF
COUT Output Capacitance (applies to All I/O) 1 MHz 8 pF
VCC + 0.4V
0.7 x VCC
0.3 x VCC
- 0.5V
Timing Reference Level
0.5 x VCC
VCC - 0.2V
0.2V
Input Levels Output Levels
VCC
RESET#
CS#
If RESET# is low at tPU end
CS# must be high at tPU end
tPU
tRH
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Figure 24. Reset High at the End of POR
Figure 25. POR Followed by hardware reset
5.3.2 IO3 / RESET# Input Initiated Hardware (Warm) Reset
The IO3 / RESET# signal functions as the RESET# input when CS# is high for more than tCS time or when Quad Mode is not
enabled CR1V[1] = 0. The IO3 / RESET# input has an internal pull-up to VCC and may be left unconnected if Quad Mode is not used.
The tCS delay after CS# goes high gives the memory or host system time to drive IO3 high after its use as a Quad Mode I/O signal
while CS# was low. The internal pull-up to VCC will then hold IO3 / RESET# high until the host system begins driving IO3 / RESET#.
The IO3 / RESET# input is ignored while CS# remains high during tCS, to avoid an unintended Reset operation. If CS# is driven low
to start a new command, IO3 / RESET# is used as IO3.
When the device is not in Quad Mode or, when CS# is high, and IO3 / RESET# transitions from VIH to VIL for > tRP, following tCS, the
device will reset register states in the same manner as Power-On Reset but, does not go through the full reset process that is
performed during POR. The hardware reset process requires a period of tRPH to complete. If the POR process did not complete
correctly for any reason during power-up (tPU), RESET# going low will initiate the full POR process instead of the hardware reset
process and will require tPU to complete the POR process.
The RESET command is independent of the state of IO3 / RESET#. If IO3 / RESET# is high or unconnected, and the RESET
instruction is issued, the device will perform software reset.
VCC
RESET#
CS#
If RESET# is high at tPU end
CS# may stay high or go low at tPU end
tPU
tPU
VCC
RESET#
CS#
tRStPU
tPU
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Additional IO3 RESET# Notes:
IO3 / RESET# must be high for tRS following tPU or tRPH, before going low again to initiate a hardware reset.
When IO3 / RESET# is driven low for at least a minimum period of time (tRP), following tCS, the device terminates any operation in
progress, makes all outputs high impedance, and ignores all read/write commands for the duration of tRPH. The device resets the
interface to standby state.
If Quad Mode and the IO3 / RESET# feature are enabled, the host system should not drive IO3 low during tCS, to avoid driver
contention on IO3. Immediately following commands that transfer data to the host in Quad Mode, e.g. Quad I/O Read, the memory
drives IO3 / Reset high during tCS, to avoid an unintended Reset operation. Immediately following commands that transfer data to
the memory in Quad Mode, e.g. Page Program, the host system should drive IO3 / Reset high during tCS, to avoid an unintended
Reset operation.
If Quad Mode is not enabled, and if CS# is low at the time IO3 / RESET# is asserted low, CS# must return high during tRPH before
it can be asserted low again after tRH.
Notes:
1. IO3 / RESET# Low is ignored during power-up (tPU). If Reset# is asserted during the end of tPU, the device will remain in the reset state and tRH will determine when
CS# may go Low.
2. If Quad Mode is enabled, IO3 / RESET# Low is ignored during tCS.
3. Sum of tRP and tRH must be equa l to or greater than tRPH.
Figure 26. Hardware Reset when Quad Mode is Not Enabled and IO3 / Reset# is Enabled
Figure 27. Hardware Reset when Quad Mode and IO3 / Reset# are Enabled
Table 16. Hardware Reset Parameters
Parameter Description Limit Time Unit
tRS Reset Setup - Prior Reset end and RESET# high before RESET# low Min 50 ns
tRPH Reset Pulse Hold - RESET# low to CS# low Min 35 µs
tRP RESET# Pulse Width Min 200 ns
tRH Reset Hold - RESET# high before CS# low Min 50 ns
IO3_RESET#
CS#
Any prior reset
tRS
tRP
tRHtRH
tRPHtRPH
IO3_RESET#
CS#
Reset Pulse
Prior access using IO3 for data
tRP
tRH
tRPH
tC S
tDIS
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5.4 SDR AC Characteristics
Notes:
1. Only applicable as a constraint for WRR or WRAR instruction when SRWD is set to a 1.
2. Full VCC range and CL = 30 pF.
3. Full VCC range and CL = 15 pF.
4. Output High-Z is defined as the point where data is no longer driven.
5. tCS and tDIS require additional time when the Reset feature and Quad Mode are enabled (CR2V[5] = 1 and CR1V[1] = 1).
Table 17. AC Characteristics
Symbol Parameter Min Typ Max Unit
FSCK, R SCK Clock Frequency for READ and 4READ
instructions DC 50 MHz
FSCK, C
SCK Clock Frequency for FAST_READ, 4FAST_READ,
and the following Dual and Quad commands: QOR,
4QOR, DIOR, 4DIOR, QIOR, 4QIOR
DC 133 MHz
FSCK, D SCK Clock Frequency for the following DDR commands:
QIOR, 4QIOR DC 80 MHz
PSCK SCK Clock Period 1/ FSCK
tWH, tCH Clock High Time 50% PSCK -5% 50% PSCK +5% ns
tWL, tCL Clock Low Time 50% PSCK -5% 50% PSCK +5% ns
tCRT, tCLCH Clock Rise Time (slew rate) 0.1 V/ns
tCFT, tCHCL Clock Fall Time (slew rate) 0.1 V/ns
tCS
CS# High Time (Read Instructions)
CS# High Time (Read Instructions when Reset feature
and Quad Mode are both enabled)
CS# High Time (Program/Erase instructions)
10
20 (5)
50
ns
tCSS CS# Active Setup Time (relative to SCK) 2 ns
tCSH CS# Active Hold Time (relative to SCK) 3 ns
tSU Data in Setup Time 2 ns
tHD Data in Hold Time 3 ns
tV Clock Low to Output Valid 8 (2)
6 (3) ns
tHO Output Hold Time 1 ns
tDIS
Output Disable Time (4)
Output Disable Time (when Reset feature and Quad
Mode are both enabled)
8
20 (5) ns
tWPS WP# Setup Time (1) 20 ns
tWPH WP# Hold Time (1) 100 ns
tDPD CS# High to Power-down Mode 3µs
tRES
CS# High to Standby Mode without Electronic Signal
Read 30 µs
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5.4.1 Clock Timing
Figure 28. Clock Timing
5.4.2 Input / Output Timing
Figure 29. SPI Single Bit Input Timing
Figure 30. SPI Single Bit Output Timing
VIL max
VIH min
tCH
tCRT tCFT
tCL
VCC / 2
PSCK
CS#
SCK
SI
SO
MSB IN LSB IN
tCSS tCSS
tCSH tCSH
tCS
tSU tHD
CS#
SCK
SI
SO MSB OUT LSB OUT
tCS
tHOtV tDIS
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Figure 31. SPI SDR MIO Timing
Figure 32. WP# Input Timing
CS#
SCK
IO MSB IN LSB IN MSB OUT LSB OUT
tCSH
tCSHtCSS
tCSS
tSU
tHD tHO
tCS
tDIStV tV
CS#
WP#
SCK
SI
SO
Phase
7654321076543210
WRR or WRAR Instruction Input Data
tWPS tWPH
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5.5 DDR AC Characteristics
.
Note:
1. CL = 15 pF.
5.5.1 DDR Input Timing
Figure 5.1 SPI DDR Input Timing
Table 18. AC Characteristics
Symbol Parameter Min Typ Max Unit
FSCK, R SCK Clock Frequency for DDR READ instruction DC 80 MHz
PSCK, R SCK Clock Period for DDR READ instruction 1/FSCK ns
tWH, tCH Clock High Time 45% PSCK ns
tWL, tCL Clock Low Time 45% PSCK ns
tCS
CS# High Time (Read Instructions)
CS# High Time (Read Instructions when Reset feature is
enabled)
10
20 ns
tCSS CS# Active Setup Time (relative to SCK) 2 ns
tCSH CS# Active Hold Time (relative to SCK) 3 ns
tSU IO in Setup Time 1.5 ns
tHD IO in Hold Time 1.5 ns
tVClock Low to Output Valid 1.5 6 (1) ns
tHO Output Hold Time 1.5 ns
tDIS
Output Disable Time
Output Disable Time (when Reset feature is enabled)
8
20 ns
tO_SKEW First Output to last Output data valid time 600 ps
tDPD CS# High to Power-Down Mode 3µs
tRES
CS# High to Standby Mode without Electronic Signal
Read 30 µs
CS#
SCK
SI_or_IO
SO
MSB IN LSB IN
tCSS tCSS
tCSH tCSH
tCS
tSU
tSU
tHD
tHD
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5.5.2 DDR Output Timing
Figure 33. SPI DDR Output Timing
Figure 34. SPI DDR Data Valid Window
Notes:
1. tCLH is the shorter duration of tCL or tCH.
2. tO_SKEW is the maximum difference (delta) between the mi nimum and maximum tV (output valid) across all IO signals.
3. tOTT is the maximum Output Transition Time from one valid data value to the next valid data value on each IO.
4. tOTT is dependent on system level considerations including:
a. Memory device output impedance (drive strength)
b. System level parasitics on the IOs (pr i marily bus capacitance)
c. Host memory controller input VIH and VIL levels at which 0 to 1 and 1 to 0 transit ions are recognized
d. As an example, assuming that the above considerations result a memory output slew rate of 2 V/ns and a 1.8 V transition (from 1 to 0 or 0 to 1) is required by the
host, the tOTT would be:
i. tOTT = 1.8 V/(2 V/ns) = 0.9 ns
e. tOTT is not a specification tested by Cypress, it is system dependent and must be derived by the system designer based on the above considerations.
5. The minimum data valid window (tDV) can be calculated as follows:
a. As an example, assuming:
i. 80 MHz clock frequency = 12.5 ns clock period
ii. DDR operations are specified to have a duty cycle of 45% or higher
iii. tCLH = 0.45*PSCK = 0.45x12.5 ns = 5.625 ns
iv. tO_SKEW = 400 ps
v. tOTT = 0.9 n s
b. tDV = tCLH - tO_SKEW - tOTT
c. tDV = 5.625 ns - 400 ps - 0.9 ns = 4.125 ns
CS#
SCK
SI
SO_or_IO MSB LSB
tCS
tHO tVtV tDIS
IO0
IO1
IO2
IO_valid
IO3
tDV
Slow
D1
Slow
D2
Fast
D1
Fast
D2
tV
tO_SKEW
tV
SCK
D1
Valid
tOTT
tCHtCL
tDV
D2
Valid
PSCK
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6. Physical Interface
6.1 SOIC 16-Lead Package
6.1.1 SOIC 16 Connection Diagram
Figure 35. 16-Lead SOIC Package (SO3016), Top View
Note:
1. The RESET# input has an internal pull-up and may be left unconnected in the system if Quad Mode and hardware reset are not in use.
1
2
3
4
16
15
14
13
IO3/RESET#
VCC
RFU
NC DNU
RFU
SI/IO0
SCK
5
6
7
8
12
11
10
9WP#/IO2
VSS
DNU
DNU
NC
RFU
CS#
SO/IO1
Document Number: 002-00368 Rev. *K Page 39 of 153
S25FS128S
S25FS256S
6.1.2 SOIC 16 Physical Diagram
Figure 36. SOIC 16-Lead, 300-mil Body Width (SO3016)
SHEET OF
REVSPEC NO.
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
CYPRESS
TITLE
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PACKAGE
CODE(S)
DRAWN BY
APPROVED BY
DATE
DATE
0.33 C
0.25 M DCA-B
0.20 C A-B
0.10 C
0.10 C
0.10 C D
2X
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
1. ALL DIMENSIONS ARE IN MILLIMETERS.
NOTES:
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
LOWER RADIUS OF THE LEAD FOOT.
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
h
0
D
L2
N
e
A1
b
c
E
E1
A
0.75
10.30 BSC
1.27 BSC
0.30
10.30 BSC
0.33
0°
0.25
16
0.20
7.50 BSC
0.10
0.31
8°
0.51
2.65
2.35
A2 2.05 2.55
b1 0.27 0.48
0.30
0.20
c1
L1
0.40
L1.27
1.40 REF
0.25 BSC
05° 15°
00°
1
2-
DIMENSIONS
SYMBOL MIN. NOM. MAX.
-
-
-
-
-
-
-
-
-
-
-
-
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
0.25 mm FROM THE LEAD TIP.
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
THE PLASTIC BODY.
PACKAGE LENGTH.
SEATING PLANE.
SO3016 KOTA
BESY
24-OCT-16
24-OCT-16
*A
002-15547
PACKAGE OUTLINE, 16 LEAD SOIC
12
TO FIT
10.30X7.50X2.65 MM SO3016/SL3016/SS3016
SL3016 SS3016
Document Number: 002-00368 Rev. *K Page 40 of 153
S25FS128S
S25FS256S
6.2 8-Connector Packages
6.2.1 8-Connector Diagrams
Figure 37. 8-Pin Plastic Small Outline Package (SOIC8)
Figure 38. 8-Connector Package (WSON 6x5), Top View
Note:
1. The RESET# input has an internal pull-up and may be left unconnected in the system if Quad Mode and hardware reset are not in use.
1
2
3
4
8
7
6
5
CS#
SO / IO1
WP# / IO2
VSS SI / IO0
SCK
IO3 / RESET#
VCC
SOIC
1
2
3
4 5
6
7
8
CS#
SO/IO1 IO3/RESET
#
SCK
SI/IO0
WSON
WP#/IO2
VCC
VSS
Document Number: 002-00368 Rev. *K Page 41 of 153
S25FS128S
S25FS256S
6.2.2 8-Connector Physical Diagrams
Figure 39. SOIC 8-Lead, 208 mil Body Width (SOC008)
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THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
CYPRESS
TITLE
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PACKAGE
CODE(S)
DRAWN BY
APPROVED BY
DATE
DATE
5.28 BSC
D
0.51
20
10
0
N
L1
L2
E1
L
e
E
15°
0°
5°
8°
0.76
5.28 BSC
8.00 BSC
1.36 REF
0.25 BSC
8
1.27 BSC
1.70
1.75
0.05
0.33
0.36
0.15
0.19
c1
c
b1
b
A2
A1
A
1.90
2.16
0.25
0.48
0.46
0.20
0.24
0-8° REF
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
1. ALL DIMENSIONS ARE IN MILLIMETERS.
NOTES:
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
LOWER RADIUS OF THE LEAD FOOT.
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
0.25 mm FROM THE LEAD TIP.
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
THE PLASTIC BODY.
PACKAGE LENGTH.
SEATING PLANE.
DIMENSIONS
SYMBOL MIN. NOM. MAX.
-
-
-
-
-
-
-
-
-
-
KOTA
BESY
18-JUL-16
18-JUL-16
**
12
TO FIT
SOC008 002-15548
PACKAGE OUTLINE, 8 LEAD SOIC
5.28X5.28X2.16 MM SOC008
Document Number: 002-00368 Rev. *K Page 42 of 153
S25FS128S
S25FS256S
Figure 40. WSON 8-Contact 6x5 mm Leadless (WND008)
SHEET OF
REVSPEC NO.
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SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
CYPRESS
TITLE
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PACKAGE
CODE(S)
DRAWN BY
APPROVED BY
DATE
DATE
A MAXIMUM 0.15mm PULL BACK (L1) MAY BE PRESENT.
BILATERAL COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK
PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE.
MAXIMUM ALLOWABLE BURR IS 0.076mm IN ALL DIRECTIONS.
DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED
N IS THE TOTAL NUMBER OF TERMINALS.
ALL DIMENSIONS ARE IN MILLIMETERS.
DIMENSIONING AND TOLERANCING CONFORMS TO ASME Y14.5M-1994.
NOTES:
MAX. PACKAGE WARPAGE IS 0.05mm.
8
7.
6.
5
2.
4
3.
1.
9
10
THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE
DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA.
ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE.
8
4
1.27 BSC.
0.40
6.00 BSC
5.00 BSC
4.00
3.40
0.20 MIN.
0.75
0.02
0.60
A1
K
A
E2
D
E
D2
b
L
ND
N
e
0.00
3.30
0.70
3.90
0.35
0.55
3.50
0.05
0.80
4.10
0.45
0.65
A3 0.20 REF
DIMENSIONS
SYMBOL
MIN. NOM. MAX.
BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS
SLUG AS WELL AS THE TERMINALS.
KOTA
LKSU
13-FEB-17
13-FEB-17
**
12
TO FIT
WND008 002-18755
PACKAGE OUTLINE, 8 LEAD DFN
5.0X6.0X0.8 MM WND008 4.0X3.4 MM EPAD (SAWN)
Document Number: 002-00368 Rev. *K Page 43 of 153
S25FS128S
S25FS256S
Figure 41. WSON 8-Contact 6x8 mm Leadless (WNH008)
SHEET OF
REVSPEC NO.
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
CYPRESS
TITLE
SCALE :
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PACKAGE
CODE(S)
DRAWN BY
APPROVED BY
DATE
DATE
JEDEC SPECIFICATION NO. REF. : N/A
COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK
PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE.
DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED
N IS THE TOTAL NUMBER OF TERMINALS.
ALL DIMENSIONS ARE IN MILLIMETERS.
NOTES:
5
4
1.
3
2.
6
7.
THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE
DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA.
ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE.
8
4
1.27 BSC.
0.40
8.00 BSC
6.00 BSC
4.00
3.40
0.20
0.75
-
0.50
A1
K
A
E2
D
E
D2
b
L
ND
N
e
0.00
3.30
0.70
3.90
0.35
0.45
3.50
0.05
0.80
4.10
0.45
0.55
A3 0.20 REF
DIMENSIONS
SYMBOL
MIN. NOM. MAX.
BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS
SLUG AS WELL AS THE TERMINALS.
--
KOTA
BESY
22-NOV-16
22-NOV-16
*A
12
TO FIT
WNH008 002-15552
PACKAGE OUTLINE, 8 LEAD DFN
6.0X8.0X0.8 MM WNH008 4.0X3.4 MM EPAD (SAWN)
Document Number: 002-00368 Rev. *K Page 44 of 153
S25FS128S
S25FS256S
6.3 FAB024 24-Ball BGA Package
6.3.1 Connection Diagrams
Figure 42. 24-Ball BGA, 5x5 Ball Footprint (FAB024), Top View
Notes:
1. Signal connections are in the same relative positions as FAC024 BGA, allowing a single PCB footprint to use either package.
2. The RESET# input has an internal pull-up and may be left unconnected in the system if Quad Mode and hardware reset are not in use.
32541
NCNC NCRFU
B
D
E
A
C
VSSSCK NCVCCDNU
RFUCS# NCWP#/IO2DNU
SI/IO0SO/IO1 NCIO3/
RESET#
DNU
NCNC NCRFUNC
Document Number: 002-00368 Rev. *K Page 45 of 153
S25FS128S
S25FS256S
6.3.2 Physical Diagram
Figure 43. Ball Grid Array 24-Ball 6x8 mm (FAB024)
SHEET OF
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THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
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CYPRESS
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PACKAGE
CODE(S)
DRAWN BY
APPROVED BY
DATE
DATE
METALLIZED MARK INDENTATION OR OTHER MEANS.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
e REPRESENTS THE SOLDER BALL GRID PITCH.
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
8.
9.
7
ALL DIMENSIONS ARE IN MILLIMETERS.
PARALLEL TO DATUM C.
5.
6
4.
3.
2.
1.
NOTES:
SD
b
eD
eE
ME
N
0.35
0.00 BSC
1.00 BSC
1.00 BSC
0.40
24
5
0.45
D1
MD
E1
E
D
A
A1 0.20
-
4.00 BSC
4.00 BSC
5
6.00 BSC
8.00 BSC
-
-1.20
-
SE 0.00 BSC
DIMENSIONS
SYMBOL MIN. NOM. MAX.
"SE" = eE/2.
FAB024 KOTA
BESY
18-JUL-16
18-JUL-16
**
002-15534
PACKAGE OUTLINE, 24 BALL FBGA
12
TO FIT
8.0X6.0X1.2 MM FAB024
Document Number: 002-00368 Rev. *K Page 46 of 153
S25FS128S
S25FS256S
6.4 FAC024 24-Ball BGA Package
6.4.1 Connection Diagram
Figure 44. 24-Ball BGA, 4x6 Ball Footprint (FAC024), Top View
Notes:
1. Signal connections are in the same relative positions as FAB024 BGA, allowing a single PCB footprint to use either package.
2. The RESET# input has an internal pull-up and may be left unconnected in the system if Quad Mode and hardware reset are not in use.
3241
NCNC RFU
B
D
E
A
C
VSSSCK VCCDNU
RFUCS# WP#/IO2DNU
SI/IO0SO/IO1 IO3/
RESET#
DNU
NCNC RFUNC
NC
NCNC NCNC
F
Document Number: 002-00368 Rev. *K Page 47 of 153
S25FS128S
S25FS256S
6.4.2 Physical Diagram
Figure 45. Ball Grid Array 24-Ball 6 x 8 mm (FAC024)
6.4.3 Special Handling Instructions for FBGA Packages
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data
integrity may be compromised if the package body is exposed to temperatures above 150 °C for prolonged periods of time.
SHEET OF
REVSPEC NO.
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
CYPRESS
TITLE
SCALE :
Company Confidential
PACKAGE
CODE(S)
DRAWN BY
APPROVED BY
DATE
DATE
METALLIZED MARK INDENTATION OR OTHER MEANS.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
e REPRESENTS THE SOLDER BALL GRID PITCH.
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
8.
9.
7
ALL DIMENSIONS ARE IN MILLIMETERS.
PARALLEL TO DATUM C.
5.
6
4.
3.
2.
1.
NOTES:
SD
b
eD
eE
ME
N
0.35
0.50 BSC
1.00 BSC
1.00 BSC
0.40
24
4
0.45
D1
MD
E1
E
D
A
A1 0.25
-
5.00 BSC
3.00 BSC
6
6.00 BSC
8.00 BSC
-
-1.20
-
SE 0.50 BSC
DIMENSIONS
SYMBOL MIN. NOM. MAX.
"SE" = eE/2.
FAC024 KOTA
BESY
18-JUL-16
18-JUL-16
**
002-15535
PACKAGE OUTLINE, 24 BALL FBGA
12
TO FIT
8.0X6.0X1.2 MM FAC024
Document Number: 002-00368 Rev. *K Page 48 of 153
S25FS128S
S25FS256S
Software Interface
This section discusses the features and behaviors most relevant to host system software that interacts with S25FS-S family memory
devices.
7. Address Space Maps
7.1 Overview
7.1.1 Extended Address
The S25FS-S family supports 32-bit (4-byte) addresses to enable higher density devices than allowed by previous generation
(legacy) SPI devices that supported only 24-bit (3-byte) addresses. A 24-bit, byte resolution, address can access only 16-Mbytes
(128-Mbits) maximum density. A 32-bit, byte resolution, address allows direct addressing of up to a 4-Gbytes (32-Gbits) address
space.
Legacy commands continue to support 24-bit addresses for backward software compatibility. Extended 32-bit addresses are
enabled in two ways:
Extended address mode — a volatile Configuration Register bit that changes all legacy commands to expect 32 bits of address
supplied from the host system.
4-byte address commands — that perform both legacy and new functions, which always expect 32-bit address.
The default condition for extended address mode, after power-up or reset, is controlled by a non-volatile configuration bit. The
default extended address mode may be set for 24- or 32-bit addresses. This enables legacy software compatible access to the first
128 Mbits of a device or for the device to start directly in 32-bit address mode.
The 128-Mbit density member of the S25FS-S family supports the extended address features in the same way but in essence
ignores bits 31 to 24 of any address because the main flash array only needs 24 bits of address. This enables simple migration from
the 128-Mb density to higher density devices without changing the address handling aspects of software.
7.1.2 Multiple Address Spaces
Many commands operate on the main flash memory array. Some commands operate on address spaces separate from the main
flash array. Each separate address space uses the full 24- or 32-bit address but may only define a small portion of the available
address space.
7.2 Flash Memory Array
The main flash array is divided into erase units called physical sectors.
The FS-S family physical sectors may be configured as a hybrid combination of eight 4-kB parameter sectors at the top or bottom of
the address space with all but one of the remaining sectors being uniform size. Because the group of eight 4-kB parameter sectors
is in total smaller than a uniform sector, the group of 4-kB physical sectors respectively overlay (replace) the top or bottom 32 kB of
the highest or lowest address uniform sector.
The Parameter Sector Erase commands (20h or 21h) must be used to erase the 4-kB sectors individually. The Sector (uniform
block) Erase commands (D8h or DCh) must be used to erase any of the remaining sectors, including the portion of highest or lowest
address sector that is not overlaid by the parameter sectors. The uniform block erase command has no effect on parameter sectors.
Configuration Register 1 non-volatile bit 2 (CR1NV[2]) equal to 0 overlays the parameter sectors at the bottom of the lowest address
uniform sector. CR1NV[2] = 1 overlays the parameter sectors at the top of the highest address uniform sector. See Section 7.6,
Registers on page 53 for more information.
There is also a configuration option to remove the 4-kB parameter sectors from the address map so that all sectors are uniform size.
Configuration Register 3 volatile bit 3 (CR3V[3]) equal to 0 selects the hybrid sector architecture with 4-kB parameter sectors.
CR3V[3]=1 selects the uniform sector architecture without parameter sectors. Uniform physical sectors are 64 kB in FS128S and
FS256S.
Document Number: 002-00368 Rev. *K Page 49 of 153
S25FS128S
S25FS256S
Both devices also may be configured to use the Sector (uniform block) Erase commands to erase 256-kB logical blocks rather than
individual 64-kB physical sectors. This configuration option (CR3V[1] = 1) allows lower density devices to emulate the same Sector
Erase behavior as higher density members of the family that use 256-kB physical sectors. This can simplify software migration to the
higher density members of the family.
Table 19. S25FS256S Sector Address Map, Bottom 4-kB Sectors, 64-kB Physical Uniform Sectors
Sector Size (kbyte) Sector Count Sector Range Address Range
(Byte Address) Notes
4 8
SA00 00000000h-00000FFFh
Sector Starting Address
—
Sector Ending Address
: :
SA07 00007000h-00007FFFh
32 1 SA08 00008000h-0000FFFFh
64 511
SA09 00010000h-0001FFFFh
: :
SA519 01FF0000h-01FFFFFFh
Table 20. S25FS256S Sector Address Map, Top 4-kB Sectors, 64-kB Physical Uniform Sectors
Sector Size (kbyte) Sector Count Sector Range Address Range
(Byte Address) Notes
64 511
SA00 0000000h-000FFFFh
Sector Starting Address —
Sector Ending Address
::
SA510 01FE0000h-01FEFFFFh
32 1 SA511 01FF0000h-01FF7FFFh
48
SA512 01FF8000h-01FF8FFFh
::
SA519 01FFF000h-01FFFFFFh
Table 21. S25FS256S Sector Address Map, Uniform 64-kB Physical Sectors
Sector Size (kbyte) Sector Count Sector Range Address Range (8-bit) Notes
64 512
SA00 0000000h-000FFFFh Sector Starting Address
—
Sector Ending Address
: :
SA511 1FF0000h-1FFFFFFh
Table 22. S25FS256S Sector Address Map, Bottom 4-kB Sectors, 256-kB Logical Uniform Sectors
Sector Size (kbyte) Sector Count Sector Range Address Range
(Byte Address) Notes
4 8
SA00 00000000h-00000FFFh
Sector Starting Address
—
Sector Ending Address
: :
SA07 00007000h-00007FFFh
224 1 SA08 00008000h-0003FFFFh
256 127
SA09 00040000h-0007FFFFh
: :
SA135 01FC0000h-01FFFFFFh
Document Number: 002-00368 Rev. *K Page 50 of 153
S25FS128S
S25FS256S
Table 23. S25FS256S Sector Address Map, Top 4-kB Sectors, 256-kB Logical Uniform Sectors
Sector Size (kbyte) Sector Count Sector Range Address Range
(Byte Address) Notes
256 127
SA00 0000000h-003FFFFh
Sector Starting Address —
Sector Ending Address
::
SA126 01F80000h-01FBFFFFh
224 1 SA127 01FC0000h-01FC7FFFh
48
SA128 01FF8000h-01FF8FFFh
::
SA135 01FFF000h-01FFFFFFh
Table 24. S25FS256S Sector Address Map, Uniform 256-kB Logical Sectors
Sector Size (kbyte) Sector Count Sector Range Address Range (8-bit) Notes
256 128
SA00 00000000h-0003FFFFh Sector Starting Address
—
Sector Ending Address
: :
SA127 01FC0000h-01FFFFFFh
Table 25. S25FS128S Sector and Memory Address Map, Bottom 4-kB Sectors
Sector Size (kbyte) Sector Count Sector Range Address Range
(Byte Address) Notes
4 8
SA00 00000000h-00000FFFh
Sector Starting Address
—
Sector Ending Address
: :
SA07 00007000h-00007FFFh
32 1 SA08 00008000h-0000FFFFh
64 255
SA09 00010000h-0001FFFFh
: :
SA263 00FF0000h-00FFFFFFh
Table 26. S25FS128S Sector and Memory Address Map, Top 4-kB Sectors
Sector Size (kbyte) Sector Count Sector Range Address Range
(Byte Address) Notes
64 255
SA00 0000000h-000FFFFh
Sector Starting Address
—
Sector Ending Address
: :
SA254 00FE0000h-00FEFFFFh
32 1 SA255 00FF0000h - 00FF7FFFh
4 8
SA256 00FF8000h - 00FF8FFFh
: :
SA263 00FFF000h-00FFFFFFh
Table 27. S25FS128S Sector and Memory Address Map, Uniform 64-kB Blocks
Sector Size (kbyte) Sector Count Sector Range Address Range
(Byte Address) Notes
64 256
SA00 0000000h-0000FFFFh, Sector Starting Address
—
Sector Ending Address
: :
SA255 00FF0000h-0FFFFFFh
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Note: These are condensed tables that use a co uple of sectors as references. There are address ranges that are not explicitly listed. All 4-kB sectors have the pattern
XXXX000h-XXXXFFFh. All 64-kB sectors have the pattern XXX0000h-XXXFFFFh. All 256-kB sectors have the pattern XX00000h-XX3FFFFh, XX40000h-XX7FFFFh,
XX80000h-XXCFFFFh, or XXD0000h-XXFFFFFh.
7.3 ID-CFI Address Space
The RDID command (9Fh) reads information from a separate flash memory address space for device identification (ID) and
Common Flash Interface (CFI) information. See Section 11.4, Device ID and Common Flash Interface (ID-CFI) Address Map
on page 128 for the tables defining the contents of the ID-CFI address space. The ID-CFI address space is programmed by Cypress
and read-only for the host system.
7.4 JEDEC JESD216 Serial Flash Discoverable Parameters (SFDP) Space.
The RSFDP command (5Ah) reads information from a separate flash memory address space for device identification, feature, and
configuration information, in accord with the JEDEC JESD216 standard for Serial Flash Discoverable Parameters. The ID-CFI
address space is incorporated as one of the SFDP parameters. See Section 11.3, Serial Flash Discoverable Parameters (SFDP)
Table 28. S25FS128S Sector Address Map, Bottom 4-kB Sectors, 256-kB Logical Uniform Sectors
Sector Size (kbyte) Sector Count Sector Range Address Range
(Byte Address) Notes
4 8
SA00 00000000h-00000FFFh
Sector Starting Address
—
Sector Ending Address
: :
SA07 00007000h-00007FFFh
224 1 SA08 00008000h-0003FFFFh
256 63
SA09 00040000h-0007FFFFh
: :
SA71 00FC0000h-00FFFFFFh
Table 29. S25FS128S Sector Address Map, Top 4-kB Sectors, 256-kB Logical Uniform Sectors
Sector Size (kbyte) Sector Count Sector Range Address Range
(Byte Address) Notes
256 63
SA00 00000000h-0003FFFFh
Sector Starting Address —
Sector Ending Address
::
SA62 00F80000h-00FBFFFFh
224 1 SA63 00FC0000h-00FF7FFFh
48
SA64 00FF8000h-00FF8FFFh
::
SA71 00FFF000h-00FFFFFFh
Table 30. S25FS128S Sector and Memory Address Map, Uniform 256-kB Blocks
Sector Size (kbyte) Sector Count Sector Range Address Range
(Byte Address) Notes
256 64
SA00 00000000h-0003FFFFh Sector Starting Address
—
Sector Ending Address
: :
SA63 00FC0000h-00FFFFFFh
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Address Map on page 125 for the tables defining the contents of the SFDP address space. The SFDP address space is
programmed by Cypress and read-only for the host system.
7.5 OTP Address Space
Each FS-S family memory device has a 1024-byte One-Time Program (OTP) address space that is separate from the main flash
array. The OTP area is divided into 32, individually lockable, 32-byte aligned and length regions.
In the 32-byte region starting at address zero:
The 16 lowest address bytes are programmed by Cypress with a 128-bit random number. Only Cypress is able to program zeros
in these bytes. Programming ones in these byte locations is ignored and does not affect the value programmed by Cypress.
Attempting to program any zero in these byte locations will fail and set P_ERR.
The next 4 higher address bytes (OTP Lock Bytes) are used to provide one bit per OTP region to permanently protect each region
from programming. The bytes are erased when shipped from Cypress. After an OTP region is programmed, it can be locked to
prevent further programming, by programming the related protection bit in the OTP Lock Bytes.
The next higher 12 bytes of the lowest address region are Reserved for Future Use (RFU). The bits in these RFU bytes may be
programmed by the host system but it must be understood that a future device may use those bits for protection of a larger OTP
space. The bytes are erased when shipped from Cypress.
The remaining regions are erased when shipped from Cypress, and are available for programming of additional permanent data.
Refer to Figure 46, OTP Address Space for a pictorial representation of the OTP memory space.
The OTP memory space is intended for increased system security. OTP values, such as the random number programmed by
Cypress, can be used to “mate” a flash component with the system CPU/ASIC to prevent device substitution.
The Configuration Register FREEZE (CR1V[0]) bit protects the entire OTP memory space from programming when set to 1. This
allows trusted boot code to control programming of OTP regions then set the FREEZE bit to prevent further OTP memory space
programming during the remainder of normal power-on system operation.
Figure 46. OTP Address Space
32-byte OTP Region 31
32-byte OTP Region 30
32-byte OTP Region 29
32-byte OTP Region 3
32-byte OTP Region 2
32-byte OTP Region 1
32-byte OTP Region 0
16-byte Random Number
Lock Bits 31 to 0
Reserved
.
.
.
Region 0 Expanded View
When programmed to 0, each
lock bit protects its related
32-byte OTP region from any
further programming
...
Byte 0h
Byte 10h
Byte 1Fh
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7.6 Registers
Registers are small groups of memory cells used to configure how the S25FS-S family memory device operates or to report the
status of device operations. The registers are accessed by specific commands. The commands (and hexadecimal instruction codes)
used for each register are noted in each register description.
In legacy SPI memory devices the individual register bits could be a mixture of volatile, non-volatile, or One-Time Programmable
(OTP) bits within the same register. In some configuration options the type of a register bit could change e.g. from non-volatile to
volatile.
The S25FS-S family uses separate non-volatile or volatile memory cell groups (areas) to implement the different register bit types.
However, the legacy registers and commands continue to appear and behave as they always have for legacy software compatibility.
There is a non-volatile and a volatile version of each legacy register when that legacy register has volatile bits or when the command
to read the legacy register has zero read latency. When such a register is read the volatile version of the register is delivered. During
Power-On Reset (POR), hardware reset, or software reset, the non-volatile version of a register is copied to the volatile version to
provide the default state of the volatile register. When non-volatile register bits are written the non-volatile version of the register is
erased and programmed with the new bit values and the volatile version of the register is updated with the new contents of the
non-volatile version. When OTP bits are programmed the non-volatile version of the register is programmed and the appropriate bits
are updated in the volatile version of the register. When volatile register bits are written, only the volatile version of the register has
the appropriate bits updated.
The type for each bit is noted in each register description. The default state shown for each bit refers to the state after Power-On
Reset, hardware reset, or software reset if the bit is volatile. If the bit is non-volatile or OTP, the default state is the value of the bit
when the device is shipped from Cypress. Non-Volatile bits have the same cycling (erase and program) endurance as the main flash
array.
Table 31. OTP Address Map
Region Byte Address Range (Hex) Contents Initial Delivery State (Hex)
Region 0
000 Least Significant Byte of Cypress
Programmed Random Number Cypress Programmed Random
Number
... ...
00F Most Significant Byte of Cypress
Programmed Random Number
010 to 013
Region Locking Bits
Byte 10 [bit 0] locks region 0 from
programming when = 0
...
Byte 13 [bit 7] locks region 31from
programming when = 0
All Bytes = FF
014 to 01F Reserved for Future Use (RFU) All Bytes = FF
Region 1 020 to 03F Available for User Programming All Bytes = FF
Region 2 040 to 05F Available for User Programming All Bytes = FF
... ... Available for User Programming All Bytes = FF
Region 31 3E0 to 3FF Available for User Programming All Bytes = FF
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7.6.1 Status Register 1
7.6.1.1 Status Register 1 Non-Volatile (SR1NV)
Related Commands: Write Registers (WRR 01h), Read Any Register (RDAR 65h), Write Any Register (WRAR 71h)
Table 32. Register Descriptions
Register Abbreviation Type Bit Location
Status Register 1 SR1NV[7:0] Non-volatile 7:0
Status Register 1 SR1V[7:0] Volatile 7:0
Status Register 2 SR2V[7:0] Volatile 7:0
Configuration Register 1 CR1NV[7:0] Non-volatile 7:0
Configuration Register 1 CR1V[7:0] Volatile 7:0
Configuration Register 2 CR2NV[7:0] Non-volatile 7:0
Configuration Register 2 CR2V[7:0] Volatile 7:0
Configuration Register 3 CR3NV[7:0] Non-volatile 7:0
Configuration Register 3 CR3V[7:0] Volatile 7:0
Configuration Register 4 CR4NV[7:0] Non-volatile 7:0
Configuration Register 4 CR4V[7:0] Volatile 7:0
ECC Status Register ECCSR [7:0] Volatile 7:0
ASP Register ASPR[15:1] OTP 15:1
ASP Register ASPR[0] RFU 0
Password Register PASS[63:0] Non-volatile OTP 63:0
PPB Lock Register PPBL[7:1] Volatile 7:1
PPB Lock Register PPBL[0] Volatile
Read Only 0
PPB Access Register PPBAR[7:0] Non-volatile 7:0
DYB Access Register DYBAR[7:0] Volatile 7:0
SPI DDR Data Learning Registers NVDLR[7:0] Non-volatile 7:0
SPI DDR Data Learning Registers VDLR[7:0] Volatile 7:0
Table 33. Status Register 1 Non-Volatile (SR1NV)
Bits Field Name Function Type Default State Description
7 SRWD_NV
Status Register
Write Disable
Default
Non-Volatile 0
1 = Locks state of SRWD, BP, and Configuration Register 1
bits when WP# is low by not executing WRR or WRAR
commands that would affect SR1NV, SR1V, CR1NV, or
CR1V.
0 = No protection, even when WP# is low.
6 P_ERR_D Programming
Error Default
Non-Volatile
Read Only 0 Provides the default state for the Programming Error Status.
Not user programmable.
5 E_ERR_D Erase Error
Default
Non-Volatile
Read Only 0 Provides the default state for the Erase Error Status. Not
user programmable.
4 BP_NV2
Block Protection
Non-Volatile Non-Volatile 000b
Protects the selected range of sectors (Block) from Program
or Erase when the BP bits are configured as non-volatile
(CR1NV[3]=0). Programmed to 111b when BP bits are
configured to volatile (CR1NV[3]=1).- after which these bits
are no longer user programmable.
3 BP_NV1
2 BP_NV0
1 WEL_D WEL Default Non-Volatile
Read Only 0 Provides the default state for the WEL Status. Not user
programmable.
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Status Register Write Non-Volatile (SRWD_NV) SR1NV[7]: Places the device in the Hardware Protected mode when this bit is set
to 1 and the WP# input is driven low. In this mode, the Write Registers (WRR) and Write Any Register (WRAR) commands (that
select Status Register 1 or Configuration Register 1) are ignored and not accepted for execution, effectively locking the state of the
Status Register 1 and Configuration Register 1 (SR1NV, SR1V, CR1NV, or CR1V) bits, by making the registers read-only. If WP# is
high, Status Register 1 and Configuration Register 1 may be changed by the WRR or WRAR commands. If SRWD_NV is 0, WP#
has no effect and Status Register 1 and Configuration Register 1 may be changed by the WRR or WRAR commands. WP# has no
effect on the writing of any other registers. The SRWD_NV bit has the same non-volatile endurance as the main flash array. The
SRWD (SR1V[7]) bit serves only as a copy of the SRWD_NV bit to provide zero read latency.
Program Error Default (P_ERR_D) SR1NV[6]: Provides the default state for the Programming Error Status in SR1V[6]. This bit is
not user programmable.
Erase Error (E_ERR) SR1V[5]: Provides the default state for the Erase Error Status in SR1V[5]. This bit is not user programmable.
Block Protection (BP_NV2, BP_NV1, BP_NV0) SR1NV[4:2]: These bits define the main flash array area to be software-protected
against Program and Erase commands. The BP bits are selected as either volatile or non-volatile, depending on the state of the BP
non-volatile bit (BPNV_O) in the Configuration Register CR1NV[3]. When CR1NV[3] = 0 the non-volatile version of the BP bits
(SR1NV[4:2]) are used to control Block Protection and the WRR command writes SR1NV[4:2] and updates SR1V[4:2] to the same
value. When CR1NV[3] = 1 the volatile version of the BP bits (SR1V[4:2]) are used to control Block Protection and the WRR
command writes SR1V[4:2] and does not affect SR1NV[4:2]. When one or more of the BP bits is set to 1, the relevant memory area
is protected against Program and Erase. The Bulk Erase (BE) command can be executed only when the BP bits are cleared to 0’s.
See Section 8.3, Block Protection on page 71 for a description of how the BP bit values select the memory array area protected. The
non-volatile version of the BP bits have the same non-volatile endurance as the main flash array.
Write Enable Latch Default (WEL_D) SR1NV[1]: Provides the default state for the WEL Status in SR1V[1]. This bit is programmed
by Cypress and is not user programmable.
Write-In-Progress Default (WIP_D) SR1NV[0]: Provides the default state for the WIP Status in SR1V[0]. This bit is programmed by
Cypress and is not user programmable.
7.6.1.2 Status Register 1 Volatile (SR1V)
Related Commands: Read Status Register (RDSR1 05h), Write Registers (WRR 01h), Write Enable (WREN 06h), Write Disable
(WRDI 04h), Clear Status Register (CLSR 30h or 82h), Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). This is the
register displayed by the RDSR1 command.
0 WIP_D WIP Default Non-Volatile
Read Only 0 Provides the default state for the WIP Status. Not user
programmable.
Table 33. Status Register 1 Non-Volatile (SR1NV) (Continued)
Bits Field Name Function Type Default State Description
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Status Register Write (SRWD) SR1V[7]: SRWD is a volatile copy of SR1NV[7]. This bit tracks any changes to the non-volatile
version of this bit.
Program Error (P_ERR) SR1V[6]: The Program Error bit is used as a program operation success or failure indication. When the
Program Error bit is set to a 1 it indicates that there was an error in the last program operation. This bit will also be set when the user
attempts to program within a protected main memory sector, or program within a locked OTP region. When the Program Error bit is
set to a 1 this bit can be cleared to 0 with the Clear Status Register (CLSR) command. This is a read-only bit and is not affected by
the WRR or WRAR commands.
Erase Error (E_ERR) SR1V[5]: The Erase Error bit is used as an Erase operation success or failure indication. When the Erase
Error bit is set to a 1 it indicates that there was an error in the last erase operation. This bit will also be set when the user attempts to
erase an individual protected main memory sector. The Bulk Erase command will not set E_ERR if a protected sector is found during
the command execution. When the Erase Error bit is set to a 1 this bit can be cleared to 0 with the Clear Status Register (CLSR)
command. This is a read-only bit and is not affected by the WRR or WRAR commands.
Block Protection (BP2, BP1, BP0) SR1V[4:2]: These bits define the main flash array area to be software protected against
program and Erase commands. The BP bits are selected as either volatile or non-volatile, depending on the state of the BP
non-volatile bit (BPNV_O) in the Configuration Register CR1NV[3]. When CR1NV[3] = 0 the non-volatile version of the BP bits
(SR1NV[4:2]) are used to control Block Protection and the WRR command writes SR1NV[4:2] and updates SR1V[4:2] to the same
value. When CR1NV[3] = 1 the volatile version of the BP bits (SR1V[4:2]) are used to control Block Protection and the WRR
command writes SR1V[4:2] and does not affect SR1NV[4:2]. When one or more of the BP bits is set to 1, the relevant memory area
is protected against program and erase. The Bulk Erase (BE) command can be executed only when the BP bits are cleared to 0’s.
See Section 8.3, Block Protection on page 71 for a description of how the BP bit values select the memory array area protected.
Table 34. Status Register 1 Volatile (SR1V)
Bits Field
Name Function Type Default State Description
7 SRWD Status Register
Write Disable
Volatile
Read Only
SR1NV
Volatile copy of SR1NV[7].
6 P_ERR Programming
Error Occurred
Volatile
Read Only
1 = Error occurred.
0 = No Error.
5 E_ERR Erase Error
Occurred
Volatile
Read Only
1= Error occurred.
0 = No Error.
4 BP2
Block Protection
Volatile Volatile
Protects selected range of sectors (Block) from Program or
Erase when the BP bits are configured as volatile
(CR1NV[3]=1). Volatile copy of SR1NV[4:2] when BP bits
are configured as non-volatile. User writable when BP bits
are configured as volatile.
3 BP1
2 BP0
1 WEL Write Enable
Latch Volatile
1 = Device accepts Write Registers (WRR and WRAR),
Program, or Erase commands.
0 = Device ignores Write Registers (WRR and WRAR),
Program, or Erase commands.
This bit is not affected by WRR or WRAR, only WREN and
WRDI commands affect this bit.
0 WIP Write-In-Progres
s
Volatile
Read Only
1= Device Busy, an embedded operation is in progress such
as Program or Erase.
0 = Ready Device is in Standby mode and can accept
commands.
This bit is not affected by WRR or WRAR, it only provides
WIP status.
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Write Enable Latch (WEL) SR1V[1]: The WEL bit must be set to 1 to enable program, write, or erase operations as a means to
provide protection against inadvertent changes to memory or register values. The Write Enable (WREN) command execution sets
the Write Enable Latch to a 1 to allow any program, erase, or write commands to execute afterwards. The Write Disable (WRDI)
command can be used to set the Write Enable Latch to a 1 to prevent all program, erase, and write commands from execution. The
WEL bit is cleared to 0 at the end of any successful program, write, or erase operation. Following a failed operation the WEL bit may
remain set and should be cleared with a WRDI command following a CLSR command. After a power-down / power-up sequence,
hardware reset, or software reset, the Write Enable Latch is set to a 0 The WRR or WRAR command does not affect this bit.
Write-In-Progress (WIP) SR1V[0]: Indicates whether the device is performing a program, write, erase operation, or any other
operation, during which a new operation command will be ignored. When the bit is set to a 1 the device is busy performing an
operation. While WIP is 1, only Read Status (RDSR1 or RDSR2), Read Any Register (RDAR), Erase Suspend (ERSP), Program
Suspend (PGSP), Clear Status Register (CLSR), and software reset (RESET) commands are accepted. ERSP and PGSP will only
be accepted if memory array erase or program operations are in progress. The Status Register E_ERR and P_ERR bits are updated
while WIP = 1. When P_ERR or E_ERR bits are set to 1, the WIP bit will remain set to 1 indicating the device remains busy and
unable to receive new operation commands. A Clear Status Register (CLSR) command must be received to return the device to
standby mode. When the WIP bit is cleared to 0 no operation is in progress. This is a read-only bit.
7.6.2 Status Register 2 Volatile (SR2V)
Related Commands: Read Status Register 2 (RDSR2 07h), Read Any Register (RDAR 65h). Status Register 2 does not have user
programmable non-volatile bits, all defined bits are volatile read only status. The default state of these bits are set by hardware.
Erase Status (ESTAT) SR2V[2]: The Erase Status bit indicates whether the sector, selected by an immediately preceding Erase
Status command, completed the last Erase command on that sector. The Erase Status command must be issued immediately
before reading SR2V to get valid Erase Status. Reading SR2V during a program or erase suspend does not provide valid Erase
Status. The Erase Status bit can be used by system software to detect any sector that failed its last erase operation. This can be
used to detect erase operations failed due to loss of power during the erase operation.
Erase Suspend (ES) SR2V[1]: The Erase Suspend bit is used to determine when the device is in Erase Suspend mode. This is a
status bit that cannot be written by the user. When Erase Suspend bit is set to 1, the device is in Erase Suspend mode. When Erase
Suspend bit is cleared to 0, the device is not in erase suspend mode. Refer to Section 9.6.5, Program or Erase Suspend (PES 85h,
75h, B0h) on page 110 for details about the Erase Suspend/Resume commands.
Program Suspend (PS) SR2V[0]: The Program Suspend bit is used to determine when the device is in Program Suspend mode.
This is a status bit that cannot be written by the user. When Program Suspend bit is set to 1, the device is in Program Suspend
mode. When the Program Suspend bit is cleared to 0, the device is not in Program Suspend mode. Refer to Section 9.6.5, Program
or Erase Suspend (PES 85h, 75h, B0h) on page 110 for details.
Table 35. Status Register 2 Volatile (SR2V)
Bits Field Name Function Type Default State Description
7 RFU Reserved 0 Reserved for Future Use.
6 RFU Reserved 0 Reserved for Future Use.
5 RFU Reserved 0 Reserved for Future Use.
4 RFU Reserved 0 Reserved for Future Use.
3 RFU Reserved 0 Reserved for Future Use.
2 ESTAT Erase Status Volatile
Read Only 0
1 = Sector Erase Status command result =
Erase Completed.
0 = Sector Erase Status command result =
Erase Not Completed.
1 ES Erase Suspend Volatile
Read Only 0 1 = In Erase Suspend mode.
0 = Not in Erase Suspend mode.
0 PS Program
Suspend
Volatile
Read Only 0 1 = In Program Suspend mode.
0 = Not in Program Suspend mode.
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7.6.3 Configuration Register 1
Configuration Register 1 controls certain interface and data protection functions. The register bits can be changed using the WRR
command with sixteen input cycles or with the WRAR command.
7.6.3.1 Configuration Register 1 Non-Volatile (CR1NV)
Related Commands: Write Registers (WRR 01h), Read Any Register (RDAR 65h), Write Any Register (WRAR 71h).
Top or Bottom Protection (TBPROT_O) CR1NV[5]: This bit defines the operation of the Block Protection bits BP2, BP1, and BP0
in the Status Register. As described in the Status Register section, the BP2-0 bits allow the user to optionally protect a portion of the
array, ranging from 1/64, ¼, ½, etc., up to the entire array. When TBPROT_O is set to a 0 the Block Protection is defined to start
from the top (maximum address) of the array. When TBPROT_O is set to a 1 the Block Protection is defined to start from the bottom
(zero address) of the array. The TBPROT_O bit is OTP and set to a 0 when shipped from Cypress. If TBPROT_O is programmed to
1, writing the bit with a 0 does not change the value or set the Program Error bit (P_ERR in SR1V[6]).
The desired state of TBPROT_O must be selected during the initial configuration of the device during system manufacture; before
the first program or erase operation on the main flash array. TBPROT_O must not be programmed after programming or erasing is
done in the main flash array.
CR1NV[4]: Reserved for Future Use.
Block Protection Non-Volatile (BPNV_O) CR1NV[3]: The BPNV_O bit defines whether the BP_NV 2-0 bits or the BP 2-0 bits in
the Status Register are selected to control the Block Protection feature. The BPNV_O bit is OTP and cleared to a 0 with the BP_NV
bits cleared to “000” when shipped from Cypress. When BPNV_O is set to a 0 the BP_NV 2-0 bits in the Status Register are selected
to control the block protection and are written by the WRR command. The time required to write the BP_NV bits is tW. When BPNV
is set to a 1 the BP2-0 bits in the Status Register are selected to control the block protection and the BP_NV 2-0 bits will be
programmed to binary “111”. This will cause the BP 2-0 bits to be set to binary 111 after POR, hardware reset, or command reset.
When BPNV is set to a 1, the WRR command writes only the volatile version of the BP bits (SR1V[4:2]). The non-volatile version of
the BP bits (SR1NV[4:2]) are no longer affected by the WRR command. This allows the BP bits to be written an unlimited number of
times because they are volatile and the time to write the volatile BP bits is the much faster tCS volatile register write time. If BPNV_O
is programmed to 1, writing the bit with a 0 does not change the value or set the Program Error bit (P_ERR in SR1V[6]).
TBPARM_O CR1NV[2]: TBPARM_O defines the logical location of the parameter block. The parameter block consists of eight 4-kB
parameter sectors, which replace a 32-kB portion of the highest or lowest address sector. When TBPARM_O is set to a 1 the
parameter block is in the top of the memory array address space. When TBPARM_O is set to a 0 the parameter block is at the
Bottom of the array. TBPARM_O is OTP and set to a 0 when it ships from Cypress. If TBPARM_O is programmed to 1, writing the bit
with a 0 does not change the value or set the Program Error bit (P_ERR in SR1V[6]).
Table 36. Configuration Register 1 Non-Volatile (CR1NV)
Bits Field Name Function Type Default
State Description
7 RFU Reserved for Future
Use Non-Volatile 0 Reserved.
6 RFU 0
5 TBPROT_O
Configures Start of
Block Protection OTP 0 1 = BP starts at bottom (Low address).
0 = BP starts at top (High address).
4 RFU Reserved for Future
Use RFU 0 Reserved.
3 BPNV_O Configures BP2-0 in
Status Register OTP 0 1 = Volatile.
0 = Non-Volatile.
2 TBPARM_O Configures Parameter
Sectors location OTP 0
1 = 4-kB physical sectors at top, (high address).
0 = 4-kB physical sectors at bottom (Low address).
RFU in uniform sector configuration.
1 QUAD_NV Quad Non-Volatile Non-Volatile 0 Provides the default state for the QUAD bit.
0 FREEZE_D FREEZE Default Non-Volatile
Read Only 0 Provides the default state for the Freeze bit. Not user
programmable.
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The desired state of TBPARM_O must be selected during the initial configuration of the device during system manufacture; before
the first program or erase operation on the main flash array. TBPARM_O must not be programmed after programming or erasing is
done in the main flash array.
TBPROT_O can be set or cleared independent of the TBPARM_O bit. Therefore, the user can elect to store parameter information
from the bottom of the array and protect boot code starting at the top of the array, or vice versa. Or, the user can elect to store and
protect the parameter information starting from the top or bottom together.
When the memory array is configured as uniform sectors, the TBPARM_O bit is Reserved for Future Use (RFU) and has no effect
because all sectors are uniform size.
Quad Data Width Non-Volatile (QUAD_NV) CR1NV[1]: Provides the default state for the Quad bit in CR1V[1]. The WRR or WRAR
command affects this bit. Non-Volatile selection of QPI Mode, by programming CR2NV[6] = 1, will also program QUAD_NV =1 to
change the non-volatile default to Quad data width mode. While QPI Mode is selected by CR2V[6] = 1, the Quad_NV bit cannot be
cleared to 0.
Freeze Protection Default (FREEZE) CR1NV[0]: Provides the default state for the FREEZE bit in CR1V[0]. This bit is not user
programmable.
7.6.3.2 Configuration Register 1 Volatile (CR1V)
Related Commands: Read Configuration Register (RDCR 35h), Write Registers (WRR 01h), Read Any Register (RDAR 65h), Write
Any Register (WRAR 71h). This is the register displayed by the RDCR command.
TBPROT, BPNV, and TBPARM CR1V[5,3,2]: These bits are volatile copies of the related non-volatile bits of CR1NV. These bits
track any changes to the related non-volatile version of these bits.
Quad Data Width (QUAD) CR1V[1]: When set to 1, this bit switches the data width of the device to 4-bit Quad Mode. That is, WP#
becomes IO2 and IO3 / RESET# becomes an active I/O signal when CS# is low or the RESET# input when CS# is high. The WP#
input is not monitored for its normal function and is internally set to high (inactive). The commands for Serial, and Dual I/O Read still
function normally but, there is no need to drive the WP# input for those commands when switching between commands using
different data path widths. Similarly, there is no requirement to drive the IO3 / RESET# during those commands (while CS# is low).
The QUAD bit must be set to 1 when using the Quad I/O Read, DDR Quad I/O Read, QPI Mode (CR2V[6] = 1), and Read Quad ID
commands. While QPI Mode is selected by CR2V[6] = 1, the Quad bit cannot be cleared to 0. The WRR command writes the
non-volatile version of the Quad bit (CR1NV[1]), which also causes an update to the volatile version CR1V[1]. The WRR command
can not write the volatile version CR1V[1] without first affecting the non-volatile version CR1NV[1]. The WRAR command must be
used when it is desired to write the volatile Quad bit CR1V[1] without affecting the non-volatile version CR1NV[1].
Table 37. Configuration Register 1 Volatile (CR1V)
Bits Field Name Function Type Default
State Description
7 RFU Reserved for Future
Use Volatile
CR1NV
Reserved.
6 RFU
5 TBPROT Volatile copy of
TBPROT_O
Volatile
Read Only
Not user writable.
See CR1NV[5] TBPROT_O.
4 RFU Reserved for Future
Use RFU Reserved.
3 BPNV Volatile copy of
BPNV_O
Volatile
Read Only
Not user writable.
See CR1NV[3] BPNV_O.
2 TBPARM Volatile copy of
TBPARM_O
Volatile
Read Only
Not user writable.
See CR1NV[2] TBPARM_O.
1 QUAD Quad I/O Mode Volatile 1 = Quad.
0 = Dual or Serial.
0 FREEZE
Lock-Down Block
Protection until next
power cycle
Volatile
Lock current state of Block Protection control bits, and OTP
regions.
1 = Block Protection and OTP locked.
0 = Block Protection and OTP unlocked.
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Freeze Protection (FREEZE) CR1V[0]: The Freeze bit, when set to 1, locks the current state of the Block Protection control bits
and OTP area:
BPNV_2-0 bits in the non-volatile Status Register 1 (SR1NV[4:2])
BP 2-0 bits in the volatile Status Register 1 (SR1V[4:2])
TBPROT_O, TBPARM_O, and BPNV_O bits in the non-volatile Configuration Register (CR1NV[53, 2])
TBPROT, TBPARM, and BPNV bits in the volatile Configuration Register (CR1V[5, 3, 2]) are indirectly protected in that they are
shadows of the related CR1NV OTP bits and are read only
the entire OTP memory space
Any attempt to change the above listed bits while FREEZE = 1 is prevented:
The WRR command does not affect the listed bits and no error status is set.
The WRAR command does not affect the listed bits and no error status is set.
The OTPP command, with an address within the OTP area, fails and the P-ERR status is set.
As long as the FREEZE bit remains cleared to logic 0 the Block Protection control bits and FREEZE are writable, and the OTP
address space is programmable.
Once the FREEZE bit has been written to a logic 1 it can only be cleared to a logic 0 by a power-off to power-on cycle or a hardware
reset. Software reset will not affect the state of the FREEZE bit.
The CR1V[0] FREEZE bit is volatile and the default state of FREEZE after power-on comes from FREEZE_D in CR1NV[0]. The
FREEZE bit can be set in parallel with updating other values in CR1V by a single WRR or WRAR command.
The FREEZE bit does not prevent the WRR or WRAR commands from changing the SRWD_NV (SR1NV[7]), Quad_NV
(CR1NV[1]), or QUAD (CR1V[1]) bits.
7.6.4 Configuration Register 2
Configuration Register 2 controls certain interface functions. The register bits can be read and changed using the Read Any Register
and Write Any Register commands. The non-volatile version of the register provides the ability to set the POR, hardware reset, or
software reset state of the controls. These configuration bits are OTP and may only have their default state changed to the opposite
value one time during system configuration. The volatile version of the register controls the feature behavior during normal
operation.
7.6.4.1 Configuration Register 2 Non-Volatile (CR2NV)
Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h).
Table 38. Configuration Register 2 Non-Volatile (CR2NV)
Bits Field Name Function Type Default
State Description
7 AL_NV Address Length
OTP
0 1 = 4-byte address.
0 = 3-byte address.
6 QA_NV QPI 0
1 = Enabled - QPI (4-4-4) protocol in use.
0 = Disabled - Legacy SPI protocols in use, instruction is
always serial on SI.
5 IO3R_NV IO3 Reset 0
1 = Enabled - IO3 is used as RESET# input when CS# is
high or Quad Mode is disabled CR1V[1]=1.
0 = Disabled - IO3 has no alternate function, hardware reset
is disabled.
4 RFU Reserved 0 Reserved For Future Use.
3
RL_NV Read Latency
1 0 to 15 latency (dummy) cycles following read address or
continuous mode bits.
Note that bit 3 has a default value of 1 and may be
programmed one time to 0 but cannot be returned to 1.
2 0
1 0
0 0
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Address Length Non-Volatile CR2NV[7]: This bit controls the POR, hardware reset, or software reset state of the expected
address length for all commands that require address and are not fixed 3-byte only or 4-byte (32-bit) only address. Most commands
that need an address are legacy SPI commands that traditionally used 3-byte (24-bit) address. For device densities greater than
128 Mbit a 4-byte address is required to access the entire memory array. The address length configuration bit is used to change
most 3-byte address commands to expect 4-byte address. See S25FS-S Family Command Set (sorted by function) on page 80 for
command address length. The use of 4-byte address length also applies to the 128-Mbit member of the S25FS-S family so that the
same 4-byte address hardware and software interface may be used for all family members to simplify migration between densities.
The 128-Mbit member of the S25FS-S family simply ignores the content of the fourth, high order, address byte. This non-volatile
address length configuration bit enables the device to start immediately (boot) in 4-byte address mode rather than the legacy 3-byte
address mode.
QPI Non-Volatile CR2NV[6]: This bit controls the POR, hardware reset, or software reset state of the expected instruction width for
all commands. Legacy SPI commands always send the instruction one bit wide (serial I/O) on the SI (IO0) signal. The S25FS-S
family also supports the QPI Mode in which all transfers between the host system and memory are 4-bits wide on IO0 to IO3,
including all instructions. This non-volatile QPI configuration bit enables the device to start immediately (boot) in QPI Mode rather
than the legacy serial instruction mode. When this bit is programmed to QPI Mode, the QUAD_NV bit is also programmed to Quad
Mode (CR1NV[1] = 1). The recommended procedure for moving to QPI Mode is to first use the WRAR command to set CR2V[6] = 1,
QPI Mode. The volatile register write for QPI Mode has a short and well defined time (tCS) to switch the device interface into QPI
Mode. Following commands can then be immediately sent in QPI protocol. The WRAR command can be used to program
CR2NV[6] = 1, followed by polling of SR1V[0] to know when the programming operation is completed. Similarly, to exit QPI Mode,
the WRAR command is used to clear CR2V[6] = 0. CR2NV[6] cannot be erased to 0 because it is OTP.
IO3 Reset Non-Volatile CR2NV[5]: This bit controls the POR, hardware reset, or software reset state of the IO3 signal behavior.
Most legacy SPI devices do not have a hardware reset input signal due to the limited signal count and connections available in
traditional SPI device packages. The S25FS-S family provides the option to use the IO3 signal as a hardware reset input when the
IO3 signal is not in use for transferring information between the host system and the memory. This non-volatile IO3 Reset
configuration bit enables the device to start immediately (boot) with IO3 enabled for use as a RESET# signal.
Read Latency Non-Volatile CR2NV[3:0]: This bit controls the POR, hardware reset, or software reset state of the Read Latency
(dummy cycle) delay in all variable latency read commands. The following read commands have a variable latency period between
the end of address or mode and the beginning of read data returning to the host:
Fast Read
Dual I/O Read
Quad I/O Read
DDR Quad I/O Read
OTPR
ECCRD
RDAR
This Non-Volatile Read Latency configuration bit sets the number of read latency (dummy cycles) in use so the device can start
immediately (boot) with an appropriate read latency for the host system.
Table 39. Latency Code (Cycles) Versus Frequency
Latency Cycles
Read Command Maximum Frequency (MHz)
Fast Read (1-1-1)
OTPR (1-1-1)
RDAR (1-1-1)
RDAR (4-4-4)
Dual I/O (1-2-2) Quad I/O (1-4-4)
QPI (4-4-4)
DDR Quad I/O (1-4-4)
DDR QPI (4-4-4) (Note 4)
Mode Cycles = 0 Mode Cycles = 4 Mode Cycles = 2 Mode Cycles = 1
050 80 40 N/A
166925322
2 80 104 66 34
3 92 116 80 45
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Notes:
1. SCK frequency > 133 MHz SDR, or > 80 MHz DDR is not supported by this family of devices.
2. The Dual I/O, Quad I/O, QP I, DDR Quad I/O, and DDR QPI, command pr otocols includ e Continuous Read mode bit s following t he address. The clock cycles for these
bits are not counted as part of the latency cycles shown in the table. Exampl e: the legacy
Quad I/O command has 2 Continuous Read mode cycl es following t he add ress. Therefore , th e legacy Quad I /O co mmand witho ut additi onal rea d latency is supported
only up to the frequency shown in the table for a read latency of 0 cycles. By increasing the variable read latency the frequency of the Quad I/O command can be
increased to allow operation up to the maximum supported 133 MHz frequency.
3. Other read commands have fixed latency, e.g. Read always has zero read latency. RSFDP always has eight cycles of latency.
4. DDR QPI is only supported for Latency Cycles 1 through 5 and for clock frequency of up to 68 MHz.
7.6.4.2 Configuration Register 2 Volatile (CR2V)
Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h), 4BAM.
4 104 129 92 57
5 116 133 104 68
6 129 133 116 80
7 133 133 129 80
8 133 133 133 80
9 133 133 133 80
10 133 133 133 80
11 133 133 133 80
12 133 133 133 80
13 133 133 133 80
14 133 133 133 80
15 133 133 133 80
Table 39. Latency Code (Cycles) Versus Frequency (Continued)
Latency Cycles
Read Command Maximum Frequency (MHz)
Fast Read (1-1-1)
OTPR (1-1-1)
RDAR (1-1-1)
RDAR (4-4-4)
Dual I/O (1-2-2) Quad I/O (1-4-4)
QPI (4-4-4)
DDR Quad I/O (1-4-4)
DDR QPI (4-4-4) (Note 4)
Mode Cycles = 0 Mode Cycles = 4 Mode Cycles = 2 Mode Cycles = 1
Table 40. Configuration Register 2 Volatile (CR2V)
Bits Field Name Function Type Default
State Description
7 AL Address Length
Volatile CR2NV
1 = 4 byte address.
0 = 3 byte address.
6 QA QPI
1 = Enabled - QPI (4-4-4) protocol in use.
0 = Disabled - Legacy SPI protocols in use, instruction is
always serial on SI.
5 IO3R_S IO3 Reset
1 = Enabled - IO3 is used as RESET# input when CS# is
high or Quad Mode is disabled CR1V[1]=1.
0 = Disabled - IO3 has no alternate function, hardware reset
is disabled.
4 RFU Reserved Reserved for Future Use.
3
RL Read Latency
0 to 15 latency (dummy) cycles following read address or
continuous mode bits.
2
1
0
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Address Length CR2V[7]: This bit controls the expected address length for all commands that require address and are not fixed
3-byte only or 4-byte (32-bit) only address. See S25FS-S Family Command Set (sorted by function) on page 80 for command
address length. This volatile Address Length configuration bit enables the address length to be changed during normal operation.
The 4-byte address mode (4BAM) command directly sets this bit into 4-byte address mode.
QPI CR2V[6]: This bit controls the expected instruction width for all commands. This volatile QPI configuration bit enables the
device to enter and exit QPI Mode during normal operation. When this bit is set to QPI Mode, the Quad bit is also set to Quad Mode
(CR1V[1] = 1). When this bit is cleared to legacy SPI mode, the Quad bit is not affected.
IO3 Reset CR2V[5]: This bit controls the IO3 / RESET# signal behavior. This volatile IO3 Reset configuration bit enables the use of
IO3 as a RESET# input during normal operation.
Read Latency CR2V[3:0]: This bit controls the read latency (dummy cycle) delay in variable latency read commands These volatile
configuration bits enable the user to adjust the read latency during normal operation to optimize the latency for different commands
or, at different operating frequencies, as needed.
7.6.5 Configuration Register 3
Configuration Register 3 controls certain command behaviors. The register bits can be read and changed using the Read Any
Register and Write Any Register commands. The non-volatile register provides the POR, hardware reset, or software reset state of
the controls. These configuration bits are OTP and may be programmed to their opposite state one time during system configuration
if needed. The volatile version of Configuration Register 3 allows the configuration to be changed during system operation or testing.
7.6.5.1 Configuration Register 3 Non-Volatile (CR3NV)
Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h).
Blank Check Non-Volatile CR3NV[5]: This bit controls the POR, hardware reset, or software reset state of the blank check during
erase feature.
02h Non-Volatile CR3NV[4]: This bit controls the POR, hardware reset, or software reset state of the Page Programming Buffer
address wrap point.
20h Non-Volatile CR3NV[3]: This bit controls the POR, hardware reset, or software reset state of the availability of 4-kB parameter
sectors in the main flash array address map.
30h Non-Volatile CR3NV[2]: This bit controls the POR, hardware reset, or software reset state of the 30h instruction code is used.
D8h Non-Volatile CR3NV[1]: This bit controls the POR, hardware reset, or software reset state of the configuration for the size of
the area erased by the D8h or DCh instructions.
Table 41. Configuration Register 3 Non-Volatile (CR3NV)
Bits Field Name Function Type Default
State Description
7 RFU Reserved
OTP
0 Reserved for Future Use.
6 RFU Reserved 0 Reserved for Future Use.
5 BC_NV Blank Check 0 1 = Blank Check during erase enabled.
0 = Blank Check disabled.
4 02h_NV Page Buffer Wrap 0 1 = Wrap at 512 bytes.
0 = Wrap at 256 bytes.
3 20h_NV 4-kB Erase 0 1 = 4-kB Erase disabled (Uniform Sector Architecture).
0 = 4-kB Erase enabled (Hybrid Sector Architecture).
2 30h_NV Clear Status / Resume
Select 0 1 = 30h is Erase or Program Resume command.
0 = 30h is clear status command.
1 D8h_NV Block Erase Size 0 1 = 256-kB Erase.
0 = 64-kB Erase.
0 F0h_NV Legacy Software Reset
Enable 0 1 = F0h software reset is enabled.
0 = F0h software reset is disabled (ignored).
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F0h Non-Volatile CR3NV[0]: This bit controls the POR, hardware reset, or software reset state of the availability of the Cypress
legacy FL-S family software reset instruction.
7.6.5.2 Configuration Register 3 Volatile (CR3V)
Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h).
Blank Check Volatile CR3V[5]: This bit controls the blank check during erase feature. When this feature is enabled an erase
command first evaluates the Erase Status of the sector. If the sector is found to have not completed its last erase successfully, the
sector is unconditionally erased. If the last erase was successful, the sector is read to determine if the sector is still erased (blank).
The erase operation is started immediately after finding any programmed zero. If the sector is already blank (no programmed zero
bit found) the remainder of the erase operation is skipped. This can dramatically reduce erase time when sectors being erased do
not need the erase operation. When enabled the blank check feature is used within the parameter erase, Sector Erase, and Bulk
Erase commands. When blank check is disabled an Erase command unconditionally starts the Erase operation.
02h Volatile CR3V[4]: This bit controls the Page Programming Buffer address wrap point. Legacy SPI devices generally have used
a 256-byte Page Programming Buffer and defined that if data is loaded into the buffer beyond the 255-byte location, the address at
which additional bytes are loaded would be wrapped to address zero of the buffer. The S25FS-S family provides a 512-byte Page
Programming Buffer that can increase programming performance. For legacy software compatibility, this configuration bit provides
the option to continue the wrapping behavior at the 256-byte boundary or to enable full use of the available 512-byte buffer by not
wrapping the load address at the 256-byte boundary.
20h Volatile CR3V[3]: This bit controls the availability of 4-kB parameter sectors in the main flash array address map. The
parameter sectors can overlay the highest or lowest 32-kB address range of the device or they can be removed from the address
map so that all sectors are uniform size. This bit shall not be written to a value different than the value of CR3NV[3]. The value of
CR3V[3] may only be changed by writing CR3NV[3].
30h Volatile CR3V[2]: This bit controls how the 30h instruction code is used. The instruction may be used as a Clear Status
command or as an alternate Program / Erase Resume command. This allows software compatibility with either Cypress legacy SPI
devices or alternate vendor devices.
D8h Volatile CR3V[1]: This bit controls the area erased by the D8h or DCh instructions. The instruction can be used to erase 64-kB
physical sectors or 256-kB size and aligned blocks. The option to erase 256-kB blocks in the lower density family members allows
for consistent software behavior across all densities that can ease migration between different densities.
F0h Volatile CR3V[0]: This bit controls the availability of the Cypress legacy FL-S family software reset instruction. The S25FS-S
family supports the industry common 66h + 99h instruction sequence for software reset. This configuration bit allows the option to
continue use of the legacy F0h single command for software reset.
Table 42. Configuration Register 3 Volatile (CR3V)
Bits Field Name Function Type Default
State Description
7 RFU Reserved
Volatile
CR3NV
Reserved for Future Use.
6 RFU Reserved Reserved for Future Use.
5 BC_V Blank Check 1 = Blank Check during erase enabled.
0 = Blank Check disabled.
4 02h_V Page Buffer Wrap 1 = Wrap at 512 bytes.
0 = Wrap at 256 bytes.
3 20h_V 4-kB Erase Volatile,
Read Only
1 = 4-kB Erase disabled (Uniform Sector Architecture).
0 = 4-kB Erase enabled (Hybrid Sector Architecture).
2 30h_V Clear Status / Resume
Select
Volatile
1 = 30h is Erase or Program Resume command.
0 = 30h is Clear Status command.
1 D8h_V Block Erase Size 1 = 256-kB Erase.
0 = 64-kB Erase.
0 F0h_V Legacy Software Reset
Enable
1 = F0h software reset is enabled.
0 = F0h software reset is disabled (ignored).
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7.6.6 Configuration Register 4
Configuration Register 4 controls the main Flash Array Read commands burst wrap behavior. The burst wrap configuration does not
affect commands reading from areas other than the main flash array e.g. read commands for registers or OTP array. The
non-volatile version of the register provides the ability to set the start up (boot) state of the controls as the contents are copied to the
volatile version of the register during the POR, hardware reset, or software reset. The volatile version of the register controls the
feature behavior during normal operation. The register bits can be read and changed using the Read Any Register and Write Any
Register commands. The volatile version of the register can also be written by the Set Burst Length (C0h) command.
7.6.6.1 Configuration Register 4 Non-Volatile (CR4NV)
Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h).
Output Impedance Non-Volatile CR4NV[7:5]: These bits control the POR, hardware reset, or software reset state of the IO signal
output impedance (drive strength). Multiple drive strength are available to help match the output impedance with the system printed
circuit board environment to minimize overshoot and ringing. These non-volatile output impedance configuration bits enable the
device to start immediately (boot) with the appropriate drive strength.
Wrap Enable Non-Volatile CR4NV[4]: This bit controls the POR, hardware reset, or software reset state of the Wrap Enable. The
commands affected by Wrap Enable are: Quad I/O Read, and DDR Quad I/O Read. This configuration bit enables the device to start
immediately (boot) in wrapped burst read mode rather than the legacy sequential read mode.
Wrap Length Non-Volatile CR4NV[1:0]: These bits controls the POR, hardware reset, or software reset state of the wrapped read
length and alignment. These non-volatile configuration bits enable the device to start immediately (boot) in wrapped burst read mode
rather than the legacy sequential read mode.
Table 43. Configuration Register 4 Non-Volatile (CR4NV)
Bits Field Name Function Type Default
State Description
7
OI_O Output Impedance
OTP
0
See Output Impedance Control.6 0
5 0
4 WE_O Wrap Enable 1 0 = Wrap Enabled.
1 = Wrap Disabled.
3 RFU Reserved 0 Reserved for Future Use.
2 RFU Reserved 0 Reserved for Future Use.
1
WL_O Wrap Length
0 00 = 8-byte wrap.
01 = 16-byte wrap.
10 = 32-byte wrap.
11 = 64-byte wrap.
0 0
Table 44. Output Impedance Control
CR4NV[7:5]
Impedance Selection
Typical Impedance to VSS
(Ohms)
Typical Impedance to VCC
(Ohms)
Notes
000 47 45 Factory Default
001 124 105
010 71 64
011 47 45
100 34 35
101 26 28
110 22 24
111 18 21
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7.6.6.2 Configuration Register 4 Volatile (CR4V)
Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h), Set Burst Length (SBL C0h).
Output Impedance CR2V[7:5]: These bits control the IO signal output impedance (drive strength). This volatile output impedance
configuration bit enables the user to adjust the drive strength during normal operation.
Wrap Enable CR4V[4]: This bit controls the burst wrap feature. This volatile configuration bit enables the device to enter and exit
burst wrapped read mode during normal operation.
Wrap Length CR4V[1:0]: These bits controls the wrapped read length and alignment during normal operation. These volatile
configuration bits enable the user to adjust the burst wrapped read length during normal operation.
7.6.7 ECC Status Register (ECCSR)
Related Commands: ECC Read (ECCRD 18h or 19h). ECCSR does not have user programmable non-volatile bits, all defined bits
are volatile read only status. The default state of these bits are set by hardware.
The status of ECC in each ECC unit is provided by the 8-bit ECC Status Register (ECCSR). The ECC Register Read command is
written followed by an ECC unit address. The contents of the status register then indicates, for the selected ECC unit, whether there
is an error in the ECC, the ECC unit data, or that ECC is disabled for that ECC unit.
ECCSR[2] = 1 indicates an error was corrected in the ECC. ECCSR[1] = 1 indicates an error was corrected in the ECC unit data.
ECCSR[0] = 1 indicates the ECC is disabled. The default state of “0” for all these bits indicates no failures and ECC is enabled.
The ECCSR[7:3] are reserved. These have undefined high or low values that can change from one ECC status read to another.
These bits should be treated as “don’t care” and ignored by any software reading status.
Table 45. Configuration Register 4 Volatile (CR4V)
Bits Field Name Function Type Default
State Description
7
OI Output Impedance
Volatile CR4NV
See Output Impedance Control on page 56.6
5
4 WE Wrap Enable 0 = Wrap Enabled.
1 = Wrap Disabled.
3 RFU Reserved Reserved for Future Use.
2 RFU Reserved Reserved for Future Use.
1
WL Wrap Length
00 = 8-byte wrap.
01 = 16-byte wrap.
10 = 32-byte wrap.
11 = 64-byte wrap.
0
Table 46. ECC Status Register (ECCSR)
Bits Field Name Function Type Default State Description
7 to 3 RFU Reserved 0 Reserved for Future Use
2 EECC Error in ECC Volatile, Read only 0
1 = Single Bit Error found in the ECC unit error
correction code
0 = No error.
1 EECCD Error in ECC unit
data Volatile, Read only 0 1 = Single Bit Error corrected in ECC unit data.
0 = No error.
0 ECCDI ECC Disabled Volatile, Read only 0 1 = ECC is disabled in the selected ECC unit.
0 = ECC is enabled in the selected ECC unit.
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7.6.8 ASP Register (ASPR)
Related Commands: ASP Read (ASPRD 2Bh) and ASP Program (ASPP 2Fh), Read Any Register (RDAR 65h), Write Any Register
(WRAR 71h).
The ASP register is a 16-bit OTP memory location used to permanently configure the behavior of Advanced Sector Protection (ASP)
features. ASPR does not have user programmable volatile bits, all defined bits are OTP.
The default state of the ASPR bits are programmed by Cypress.
Password Protection Mode Lock Bit (PWDMLB) ASPR[2]: When programmed to 0, the Password Protection mode is
permanently selected.
Persistent Protection Mode Lock Bit (PSTMLB) ASPR[1]: When programmed to 0, the Persistent Protection mode is
permanently selected.
PWDMLB (ASPR[2]) and PSTMLB (ASPR[1]) are mutually exclusive, only one may be programmed to 0.
ASPR bits may only be programmed while ASPR[2:1] = 11b. Attempting to program ASPR bits when ASPR[2:1] is not = 11b will
result in a programming error with P_ERR (SR1V[6]) set to 1. After the ASP protection mode is selected by programming
ASPR[2:1] = 10b or 01b, the state of all ASPR bits are locked and permanently protected from further programming. Attempting to
program ASPR[2:1] = 00b will result in a programming error with P_ERR (SR1V[6]) set to 1.
Similarly, OTP configuration bits listed in the ASP Register description (See ASP Register on page 75.), may only be programmed
while ASPR[2:1] = 11b. The OTP configuration must be selected before selecting the ASP protection mode. The OTP configuration
bits are permanently protected from further change when the ASP protection mode is selected. Attempting to program these OTP
configuration bits when ASPR[2:1] is not = 11b will result in a programming error with P_ERR (SR1V[6]) set to 1.
The ASP protection mode should be selected during system configuration to ensure that a malicious program does not select an
undesired protection mode at a later time. By locking all the protection configuration via the ASP mode selection, later alteration of
the protection methods by malicious programs is prevented.
Table 47. ASP Register (ASPR)
Bits Field Name Function Type Default
State Description
15 to 9 RFU Reserved OTP 1 Reserved for Future Use.
8 RFU Reserved OTP 1 Reserved for Future Use.
7 RFU Reserved OTP 1 Reserved for Future Use.
6 RFU Reserved OTP 1 Reserved for Future Use.
5 RFU Reserved OTP 1 Reserved for Future Use.
4 RFU Reserved RFU 1 Reserved for Future Use.
3 RFU Reserved RFU 1 Reserved for Future Use.
2 PWDMLB
Password
Protection Mode
Lock Bit
OTP 1 0 = Password Protection mode permanently enabled.
1 = Password Protection mode not permanently enabled.
1 PSTMLB
Persistent
Protection Mode
Lock Bit
OTP 1 0 = Persistent Protection mode permanently enabled.
1 = Persistent Protection mode not permanently enabled.
0 RFU Reserved RFU 1 Reserved for Future Use.
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7.6.9 Password Register (PASS)
Related Commands: Password Read (PASSRD E7h) and Password Program (PASSP E8h), Read Any Register (RDAR 65h), Write
Any Register (WRAR 71h). The PASS register is a 64-bit OTP memory location used to permanently define a password for the
Advanced Sector Protection (ASP) feature. PASS does not have user programmable volatile bits, all defined bits are OTP. A volatile
copy of PASS is used to satisfy read latency requirements but the volatile register is not user writable or further described.
7.6.10 PPB Lock Register (PPBL)
Related Commands: PPB Lock Read (PLBRD A7h, PLBWR A6h), Read Any Register (RDAR 65h).
PPBL does not have separate user programmable non-volatile bits, all defined bits are volatile read only status. The default state of
the RFU bits is set by hardware. The default state of the PPBLOCK bit is defined by the ASP protection mode bits in ASPR[2:1].
There is no non-volatile version of the PPBL register.
The PPBLOCK bit is used to protect the PPB bits. When PPBL[0] = 0, the PPB bits can not be programmed.
7.6.11 PPB Access Register (PPBAR)
Related Commands: PPB Read (PPBRD FCh or 4PPBRD E2h), PPB Program (PPBP FDh or 4PPBP E3h), PPB Erase (PPBE
E4h).
PPBAR does not have user writable volatile bits, all PPB array bits are non-volatile. The default state of the PPB array is erased to
FFh by Cypress. There is no volatile version of the PPBAR register.
7.6.12 DYB Access Register (DYBAR)
Related Commands: DYB Read (DYBRD FAh or 4DYBRD E0h) and DYB Write (DYBWR FBh or 4DYBWR E1h).
DYBAR does not have user programmable non-volatile bits, all bits are a representation of the volatile bits in the DYB array. The
default state of the DYB array bits is set by hardware. There is no non-volatile version of the DYBAR register.
Table 48. Password Register (PASS)
Bits Field
Name Function Type Default State Description
63 to 0 PWD Hidden
Password OTP FFFFFFFF-FFFFFFFF
h
Non-Volatile OTP storage of 64-bit password. The password is no
longer readable after the password protection mode is selected by
programming ASP register bit 2 to 0.
Table 49. PPB Lock Register (PPBL)
Bits Field Name Function Type Default State Description
7 to 1 RFU Reserved Volatile 00h Reserved for Future Use
0 PPBLOCK Protect PPB Array Volatile
Read Only
ASPR[2:1] = 1xb = Persistent Protection
Mode = 1
ASPR[2:1] = 01b = Password Protection
Mode = 0
0 = PPB array protected.
1 = PPB array may be programmed or erased.
Table 50. PPB Access Register (PPBAR)
Bits Field Name Function Type Default State Description
7 to 0 PPB Read or Program
per sector PPB Non-Volatile FFh
00h = PPB for the sector addressed by the PPBRD or PPBP
command is programmed to 0, protecting that sector from
program or erase operations.
FFh = PPB for the sector addressed by the PPBRD
command is 1, not protecting that sector from program or
erase operations.
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7.6.13 SPI DDR Data Learning Registers
Related Commands: Program NVDLR (PNVDLR 43h), Write VDLR (WVDLR 4Ah), Data Learning Pattern Read (DLPRD 41h), Read
Any Register (RDAR 65h), Write Any Register (WRAR 71h).
The Data Learning Pattern (DLP) resides in an 8-bit Non-Volatile Data Learning Register (NVDLR) as well as an 8-bit Volatile Data
Learning Register (VDLR). When shipped from Cypress, the NVDLR value is 00h. Once programmed, the NVDLR cannot be
reprogrammed or erased; a copy of the data pattern in the NVDLR will also be written to the VDLR. The VDLR can be written to at
any time, but on reset or power cycles the data pattern will revert back to what is in the NVDLR. During the learning phase described
in the SPI DDR modes, the DLP will come from the VDLR. Each IO will output the same DLP value for every clock edge. For
example, if the DLP is 34h (or binary 00110100) then during the first clock edge all IO’s will output 0; subsequently, the 2nd clock
edge all I/O’s will output 0, the 3rd will output 1, etc.
When the VDLR value is 00h, no preamble data pattern is presented during the dummy phase in the DDR commands.
Table 51. DYB Access Register (DYBAR)
Bits Field Name Function Type Default State Description
7 to 0 DYB Read or Write
per sector DYB Volatile FFh
00h = DYB for the sector addressed by the DYBRD or DYBWR
command is cleared to 0, protecting that sector from program or erase
operations.
FFh = DYB for the sector addressed by the DYBRD or DYBWR
command is set to 1, not protecting that sector from program or erase
operations.
Table 52. Non-Volatile Data Learning Register (NVDLR)
Bits Field Name Function Type Default State Description
7 to 0 NVDLP
Non-Volatile
Data Learning
Pattern
OTP 00h
OTP value that may be transferred to the host during DDR read
command latency (dummy) cycles to provide a training pattern to help
the host more accurately center the data capture point in the received
data bits.
Table 53. Volatile Data Learning Register (VDLR)
Bits Field Name Function Type Default State Description
7 to 0 VDLP Volatile Data
Learning Pattern Volatile
Takes the value
of NVDLR
during POR or
Reset
Volatile copy of the NVDLP used to enable and deliver the Data Learning
Pattern (DLP) to the outputs. The VDLP may be changed by the host
during system operation.
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8. Data Protection
8.1 Secure Silicon Region (OTP)
The device has a 1024 byte One-Time Program (OTP) address space that is separate from the main flash array. The OTP area is
divided into 32, individually lockable, 32-byte aligned and length regions.
The OTP memory space is intended for increased system security. OTP values can “mate” a flash component with the system
CPU/ASIC to prevent device substitution. See OTP Address Space on page 52, OTP Program (OTPP 42h) on page 113, and OTP
Read (OTPR 4Bh) on page 114.
8.1.1 Reading OTP Memory Space
The OTP Read command uses the same protocol as Fast Read. OTP Read operations outside the valid 1-kB OTP address range
will yield indeterminate data.
8.1.2 Programming OTP Memory Space
The protocol of the OTP programming command is the same as Page Program. The OTP Program command can be issued multiple
times to any given OTP address, but this address space can never be erased.
Automatic ECC is programmed on the first programming operation to each 16 byte region. Programming within a 16 byte region
more than once disables the ECC. It is recommended to program each 16 byte portion of each 32 byte region once so that ECC
remains enabled to provide the best data integrity.
The valid address range for OTP Program is depicted in Figure 46, OTP Address Space on page 52. OTP Program operations
outside the valid OTP address range will be ignored, without P_ERR in SR1V set to 1. OTP Program operations within the valid OTP
address range, while FREEZE = 1, will fail with P_ERR in SR1V set to 1. The OTP address space is not protected by the selection
of an ASP Protection mode. The Freeze bit (CR1V[0]) may be used to protect the OTP Address Space.
8.1.3 Cypress Programmed Random Number
Cypress standard practice is to program the low order 16 bytes of the OTP memory space (locations 0x0 to 0xF) with a 128-bit
random number using the Linear Congruential Random Number Method. The seed value for the algorithm is a random number
concatenated with the day and time of tester insertion.
8.1.4 Lock Bytes
The LSB of each Lock byte protects the lowest address region related to the byte, the MSB protects the highest address region
related to the byte. The next higher address byte similarly protects the next higher 8 regions. The LSB bit of the lowest address Lock
Byte protects the higher address 16 bytes of the lowest address region. In other words, the LSB of location 0x10 protects all the Lock
Bytes and RFU bytes in the lowest address region from further programming. See OTP Address Space on page 52.
8.2 Write Enable Command
The Write Enable (WREN) command must be written prior to any command that modifies non-volatile data. The WREN command
sets the Write Enable Latch (WEL) bit. The WEL bit is cleared to 0 (disables writes) during power-up, hardware reset, or after the
device completes the following commands:
Reset
Page Program (PP or 4PP)
Parameter 4-kB Erase (P4E or 4P4E)
Sector Erase (SE or 4SE)
Bulk Erase (BE)
Write Disable (WRDI)
Write Registers (WRR)
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Write Any Register (WRAR)
OTP Byte Programming (OTPP)
Advanced Sector Protection Register Program (ASPP)
Persistent Protection Bit Program (PPBP)
Persistent Protection Bit Erase (PPBE)
Password Program (PASSP)
Program Non-Volatile Data Learning Register (PNVDLR)
8.3 Block Protection
The Block Protect bits (Status Register bits BP2, BP1, BP0) in combination with the Configuration Register TBPROT_O bit can be
used to protect an address range of the main flash array from program and erase operations. The size of the range is determined by
the value of the BP bits and the upper or lower starting point of the range is selected by the TBPROT_O bit of the Configuration
Register (CR1NV[5]).
Table 54. Upper Array Start of Protection (TBPROT_O = 0)
Status Register Content Protected Fraction of
Memory Array
Protected Memory (kbytes)
BP2 BP1 BP0 FS128S
128 Mb
FS256S
256 Mb
0 0 0 None 0 0
0 0 1 Upper 64th 256 512
0 1 0 Upper 32nd 512 1024
0 1 1 Upper 16th 1024 2048
1 0 0 Upper 8th 2048 4096
1 0 1 Upper 4th 4096 8192
1 1 0 Upper Half 8192 16384
1 1 1 All Sectors 16384 32768
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When Block Protection is enabled (i.e., any BP2-0 are set to 1), Advanced Sector Protection (ASP) can still be used to protect
sectors not protected by the Block Protection scheme. In the case that both ASP and Block Protection are used on the same sector
the logical OR of ASP and Block Protection related to the sector is used.
8.3.1 Freeze Bit
Bit 0 of Configuration Register 1 (CR1V[0]) is the FREEZE bit. The Freeze bit, when set to 1, locks the current state of the Block
Protection control bits and OTP area until the next power off-on cycle. Additional details in Configuration Register 1 Volatile (CR1V)
on page 59.
8.3.2 Write Protect Signal
The Write Protect (WP#) input in combination with the Status Register Write Disable (SRWD) bit (SR1NV[7]) provide hardware input
signal controlled protection. When WP# is Low and SRWD is set to 1 Status Register 1 (SR1NV and SR1V) and Configuration
Register 1 (CR1NV and CR1V) are protected from alteration. This prevents disabling or changing the protection defined by the Block
Protect bits. See Status Register 1 on page 54.
8.4 Advanced Sector Protection
Advanced Sector Protection (ASP) is the name used for a set of independent hardware and software methods used to disable or
enable programming or erase operations, individually, in any or all sectors.
Every main flash array sector has a non-volatile Persistent Protection Bit (PPB) and a volatile Dynamic Protection Bit (DYB)
associated with it. When either bit is 0, the sector is protected from program and erase operations. The PPB bits are protected from
program and erase when the volatile PPB Lock bit is 0. There are two methods for managing the state of the PPB Lock bit:
Password Protection and Persistent Protection. An overview of these methods is shown in Figure 48, Advanced Sector Protection
Overview on page 74.
Block Protection and ASP protection settings for each sector are logically ORed to define the protection for each sector i.e. if either
mechanism is protecting a sector the sector cannot be programmed or erased. Refer to Block Protection on page 71 for full details of
the BP2-0 bits.
Table 55. Lower Array Start of Protection (TBPROT_O = 1)
Status Register Content Protected Fraction of
Memory Array
Protected Memory (kbytes)
BP2 BP1 BP0 FS128S
128 Mb
FS256S
256 Mb
0 0 0 None 0 0
0 0 1 Lower 64th 256 512
0 1 0 Lower 32nd 512 1024
0 1 1 Lower 16th 1024 2048
1 0 0 Lower 8th 2048 4096
1 0 1 Lower 4th 4096 8192
1 1 0 Lower Half 8192 16384
1 1 1 All Sectors 16384 32768
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Figure 47. Sector Protection Control
Sector 0
Logical OR
Sector 0
Sector 0
Block
Sector 1
Logical OR
Sector 1
Sector 1
Sector N
Logical OR
Sector N
Sector N
...
...
...
...
Protection
Logic
Persistent
Protection
Bits Array
(PPB)
Dynamic
Protection
Bits Array
(DYB)
Flash
Memory
Array
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Figure 48. Advanced Sector Protection Overview
The Persistent Protection method sets the PPB Lock bit to 1 during POR, or hardware reset so that the PPB bits are unprotected by
a device reset. There is a command to clear the PPB Lock bit to 0 to protect the PPB. There is no command in the Persistent
Protection method to set the PPB Lock bit to 1, therefore the PPB Lock bit will remain at 0 until the next power-off or hardware reset.
The Persistent Protection method allows boot code the option of changing sector protection by programming or erasing the PPB,
then protecting the PPB from further change for the remainder of normal system operation by clearing the PPB Lock bit to 0. This is
sometimes called Boot-code controlled sector protection.
Power On / Reset
ASPR[2]=0 ASPR[1]=0
PPBLOCK = 0
PPB Bits Locked
PPBLOCK = 1
PPB Bits Erasable
ASPR Bits Locked ASPR Bits Locked ASPR Bits Are
Programmable
and Programmable
Password Unlock
PPBLOCK = 1
PPB Bits Erasable
and Programmable
Password Protection Persistent Protection Default
Persistent Protection
PPB Lock Bit Write
PPB Lock Bit Write
PPBLOCK = 0
PPB Bits Locked
Yes
Yes
Yes
Yes Yes
No
No
No No
No
Password Protection
Mode protects the
Persistent Protection
Mode does not
Default Mode allows
protect the PPB after
power up. The bits may
be changed. A PPB
Lock Bit write command
protects the PPB bits
until the next power-off
or reset.
PPB after power up.
A password unlock
command will enable
changes to PPB. A PPB
Lock Bit write command
turns protection back on.
ASPR to be programmed
to permanently select
the Protection mode.
The default mode otherwise
acts the same as the
Persistent Protection Mode.
After one of the protection
modes is selected, ASPR
is no longer programmable,
making the selected protection
mode permanent.
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The Password method clears the PPB Lock bit to 0 during POR, or hardware reset to protect the PPB. A 64-bit password may be
permanently programmed and hidden for the password method. A command can be used to provide a password for comparison with
the hidden password. If the password matches, the PPB Lock bit is set to 1 to unprotect the PPB. A command can be used to clear
the PPB Lock bit to 0. This method requires use of a password to control PPB protection.
The selection of the PPB Lock bit management method is made by programming OTP bits in the ASP Register so as to permanently
select the method used.
8.4.1 ASP Register
The ASP register is used to permanently configure the behavior of Advanced Sector Protection (ASP) features. See ASP Register
(ASPR) on page 67.
As shipped from the factory, all devices default ASP to the Persistent Protection mode, with all sectors unprotected, when power is
applied. The device programmer or host system must then choose which sector protection method to use. Programming either of
the, one-time programmable, Protection Mode Lock bits, locks the part permanently in the selected mode:
ASPR[2:1] = “11” = No ASP mode selected, Persistent Protection mode is the default.
ASPR[2:1] = “10” = Persistent Protection mode permanently selected.
ASPR[2:1] = “01” = Password Protection mode permanently selected.
ASPR[2:1] = “00” is an Illegal condition, attempting to program more than one bit to zero results in a programming failure.
ASP register programming rules:
If the password mode is chosen, the password must be programmed prior to setting the Protection Mode Lock bits.
Once the Protection mode is selected, the following OTP Configuration Register bits are permanently protected from
programming and no further changes to the OTP register bits is allowed:
– CR1NV[5:2]
–CR2NV
–CR3NV
–CR4NV
– ASPR
– PASS
–NVDLR
– If an attempt to change any of the registers above, after the ASP mode is selected, the operation will fail and P_ERR
(SR1V[6]) will be set to 1.
The programming time of the ASP register is the same as the typical page programming time. The system can determine the status
of the ASP register programming operation by reading the WIP bit in the Status Register. See Status Register 1 on page 54 for
information on WIP.
See Sector Protection States Summary on page 76.
8.4.2 Persistent Protection Bits
The Persistent Protection Bits (PPB) are located in a separate non-volatile flash array. One of the PPB bits is related to each sector.
When a PPB is 0, its related sector is protected from program and erase operations. The PPB are programmed individually but must
be erased as a group, similar to the way individual words may be programmed in the main array but an entire sector must be erased
at the same time. The PPB have the same program and erase endurance as the main flash memory array. Preprogramming and
verification prior to erasure are handled by the device.
Programming a PPB bit requires the typical page programming time. Erasing all the PPBs requires typical Sector Erase time. During
PPB bit programming and PPB bit erasing, status is available by reading the Status Register. Reading of a PPB bit requires the
initial access time of the device.
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Notes:
1. Each PPB is individuall y programmed to 0 and all are erased to 1 in parallel.
2. If the PPB Lock bit is 0, the PPB Program or PPB Erase command does not execute and fails without programming or erasing the PPB.
3. The state of the PPB for a given sector can be verified by using the PPB Read command.
8.4.3 Dynamic Protection Bits
Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYB only control the protection for
sectors that have their PPB set to 1. By issuing the DYB Write command, a DYB is cleared to 0 or set to 1, thus placing each sector
in the protected or unprotected state respectively. This feature allows software to easily protect sectors against inadvertent changes,
yet does not prevent the easy removal of protection when changes are needed. The DYBs can be set or cleared as often as needed
as they are volatile bits.
8.4.4 PPB Lock Bit (PPBL[0])
The PPB Lock Bit is a volatile bit for protecting all PPB bits. When cleared to 0, it locks all PPBs, when set to 1, it allows the PPBs to
be changed. See Section 7.6.10, PPB Lock Register (PPBL) on page 68 for more information.
The PLBWR command is used to clear the PPB Lock bit to 0. The PPB Lock Bit must be cleared to 0 only after all the PPBs are
configured to the desired settings.
In Persistent Protection mode, the PPB Lock is set to 1 during POR or a hardware reset. When cleared to 0, no software command
sequence can set the PPB Lock bit to 1, only another hardware reset or power-up can set the PPB Lock bit.
In the Password Protection mode, the PPB Lock bit is cleared to 0 during POR or a hardware reset. The PPB Lock bit can only be
set to 1 by the Password Unlock command.
8.4.5 Sector Protection States Summary
Each sector can be in one of the following protection states:
Unlocked — The sector is unprotected and protection can be changed by a simple command. The protection state defaults to
unprotected when the device is shipped from Cypress.
Dynamically Locked — A sector is protected and protection can be changed by a simple command. The protection state is not
saved across a power cycle or reset.
Persistently Locked — A sector is protected and protection can only be changed if the PPB Lock bit is set to 1. The protection
state is non-volatile and saved across a power cycle or reset. Changing the protection state requires programming and or erase of
the PPB bits.
Table 56. Sector Protection States
Protection Bit Values Sector State
PPB Lock PPB DYB
1 1 1 Unprotected – PPB and DYB are changeable.
1 1 0 Protected – PPB and DYB are changeable.
1 0 1 Protected – PPB and DYB are changeable.
1 0 0 Protected – PPB and DYB are changeable.
0 1 1 Unprotected – PPB not changeable, DYB is changeable.
0 1 0 Protected – PPB not changeable, DYB is changeable.
0 0 1 Protected – PPB not changeable, DYB is changeable.
0 0 0 Protected – PPB not changeable, DYB is changeable.
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8.4.6 Persistent Protection Mode
The Persistent Protection method sets the PPB Lock bit to 1 during POR or hardware reset so that the PPB bits are unprotected by
a device hardware reset. Software reset does not affect the PPB Lock bit. The PLBWR command can clear the PPB Lock bit to 0 to
protect the PPB. There is no command to set the PPB Lock bit therefore the PPB Lock bit will remain at 0 until the next power-off or
hardware reset.
8.4.7 Password Protection Mode
Password Protection mode allows an even higher level of security than the Persistent Sector Protection mode, by requiring a 64-bit
password for unlocking the PPB Lock bit. In addition to this password requirement, after power-up and hardware reset, the PPB
Lock bit is cleared to 0 to ensure protection at power-up. Successful execution of the Password Unlock command by entering the
entire password sets the PPB Lock bit to 1, allowing for sector PPB modifications.
Password Protection Notes:
Once the Password is programmed and verified, the Password mode (ASPR[2]=0) must be set in order to prevent reading the
password.
The Password Program Command is only capable of programming 0s. Programming a 1 after a cell is programmed as a 0 results
in the cell left as a 0 with no programming error set.
The password is all 1s when shipped from Cypress. It is located in its own memory space and is accessible through the use of the
Password Program, Password Read, RDAR, and WRAR commands.
All 64-bit password combinations are valid as a password.
The Password mode, once programmed, prevents reading the 64-bit password and further password programming. All further
program and read commands to the password region are disabled and these commands are ignored or return undefined data. There
is no means to verify what the password is after the Password Mode Lock bit is selected. Password verification is only allowed
before selecting the Password Protection mode.
The Protection Mode Lock bits are not erasable.
The exact password must be entered in order for the unlocking function to occur. If the password unlock command provided
password does not match the hidden internal password, the unlock operation fails in the same manner as a programming operation
on a protected sector. The P_ERR bit is set to 1, the WIP bit remains set, and the PPB Lock bit remains cleared to 0.
The Password Unlock command cannot be accepted any faster than once every 100 µs ± 20 µs. This makes it take an
unreasonably long time (58 million years) for a hacker to run through all the 64-bit combinations in an attempt to correctly match a
password. The Read Status Register 1 command may be used to read the WIP bit to determine when the device has completed the
password unlock command or is ready to accept a new password command. When a valid password is provided the password
unlock command does not insert the 100 µs delay before returning the WIP bit to 0.
If the password is lost after selecting the Password mode, there is no way to set the PPB Lock bit.
ECC status may only be read from sectors that are readable. In read protection mode the addresses are forced to the boot sector
address. ECC status is only in that sector while read protection mode is active.
8.5 Recommended Protection Process
During system manufacture, the flash device configuration should be defined by:
1. Programming the OTP configuration bits in CR1NV[5, 3:2], CR2NV, CR3NV, and CR4NV as desired.
2. Program the Secure Silicon Region (OTP area) as desired.
3. Program the PPB bits as desired via the PPBP command.
4. Program the Non-Volatile Data Learning Pattern (NVDLR) if it will be used in DDR read commands.
5. Program the Password register (PASS) if password protection will be used.
6. Program the ASP Register as desired, including the selection of the persistent or password ASP protection mode in
ASPR[2:1]. It is very important to explicitly select a protection mode so that later accidental or malicious programming of
the ASP register and OTP configuration is prevented. This is to ensure that only the intended OTP protection and
configuration features are enabled.
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During system power-up and boot code execution:
1. Trusted boot code can determine whether there is any need to program additional SSR (OTP area) information. If no SSR
changes are needed the FREEZE bit (CR1V[0]) can be set to 1 to protect the SSR from changes during the remainder of
normal system operation while power remains on.
2. If the Persistent Protection mode is in use, trusted boot code can determine whether there is any need to modify the
persistent (PPB) sector protection via the PPBP or PPBE commands. If no PPB changes are needed the PPBLOCK bit
can be cleared to 0 via the PPBL to protect the PPB bits from changes during the remainder of normal system operation
while power remains on.
3. The Dynamic (DYB) Sector Protection bits can be written as desired via the DYBAR.
9. Commands
All communication between the host system and S25FS-S family memory devices is in the form of units called commands.
All commands begin with an instruction that selects the type of information transfer or device operation to be performed. Commands
may also have an address, instruction modifier, latency period, data transfer to the memory, or data transfer from the memory. All
instruction, address, and data information is transferred sequentially between the host system and memory device.
Command protocols are also classified by a numerical nomenclature using three numbers to reference the transfer width of three
command phases:
instruction;
address and instruction modifier (mode);
data.
Single bit wide commands start with an instruction and may provide an address or data, all sent only on the SI signal. Data may be
sent back to the host serially on the SO signal. This is referenced as a 1-1-1 command protocol for single bit width instruction, single
bit width address and modifier, single bit data.
Dual or Quad Input / Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or, four bit (nibble)
groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0,
IO1, IO2, and IO3. This is referenced as 1-2-2 for Dual I/O and 1-4-4 for Quad I/O command protocols.
The S25FS-S family also supports a QPI Mode in which all information is transferred in 4-bit width, including the instruction, address,
modifier, and data. This is referenced as a 4-4-4 command protocol.
Commands are structured as follows:
Each command begins with an eight bit (byte) instruction. However, some read commands are modified by a prior read
command, such that the instruction is implied from the earlier command. This is called Continuous Read mode. When the device is
in Continuous Read mode, the instruction bits are not transmitted at the beginning of the command because the instruction is the
same as the read command that initiated the Continuous Read mode. In Continuous Read mode the command will begin with the
read address. Thus, Continuous Read mode removes eight instruction bits from each read command in a series of same type read
commands.
The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces
in the device. The address may be either a 24-bit or 32-bit, byte boundary, address.
The Serial Peripheral Interface with Multiple IO provides the option for each transfer of address and data information to be done
one, two, or four bits in parallel. This enables a trade off between the number of signal connections (IO bus width) and the speed of
information transfer. If the host system can support a two or four bit wide IO bus the memory performance can be increased by using
the instructions that provide parallel 2-bit (dual) or parallel 4-bit (quad) transfers.
In legacy SPI Multiple IO mode, the width of all transfers following the instruction are determined by the instruction sent. Following
transfers may continue to be single bit serial on only the SI or Serial Output (SO) signals, they may be done in two bit groups per
(dual) transfer on the IO0 and IO1 signals, or they may be done in 4-bit groups per (quad) transfer on the IO0-IO3 signals. Within the
dual or quad groups the least significant bit is on IO0. More significant bits are placed in significance order on each higher numbered
IO signal. Single bits or parallel bit groups are transferred in most to least significant bit order.
In QPI Mode, the width of all transfers, including instructions, is a 4-bit wide (quad) transfer on the IO0-IO3 signals.
Dual I/O and Quad I/O read instructions send an instruction modifier called mode bits, following the address, to indicate that the
next command will be of the same type with an implied, rather than an explicit, instruction. The next command thus does not provide
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an instruction byte, only a new address and mode bits. This reduces the time needed to send each command when the same
command type is repeated in a sequence of commands.
The address or mode bits may be followed by write data to be stored in the memory device or by a read latency period before
read data is returned to the host.
Read latency may be zero to several SCK cycles (also referred to as dummy cycles).
All instruction, address, mode, and data information is transferred in byte granularity. Addresses are shifted into the device with
the most significant byte first. All data is transferred with the lowest address byte sent first. Following bytes of data are sent in lowest
to highest byte address order i.e. the byte address increments.
All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The
embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an embedded
operation. These are discussed in the individual command descriptions. While a program, erase, or write operation is in progress, it
is recommended to check that the Write-In Progress (WIP) bit is 0 before issuing most commands to the device, to ensure the new
command can be accepted.
Depending on the command, the time for execution varies. A command to read status information from an executing command is
available to determine when the command completes execution and whether the command was successful.
Although host software in some cases is used to directly control the SPI interface signals, the hardware interfaces of the host
system and the memory device generally handle the details of signal relationships and timing. For this reason, signal relationships
and timing are not covered in detail within this software interface focused section of the document. Instead, the focus is on the logical
sequence of bits transferred in each command rather than the signal timing and relationships. Following are some general signal
relationship descriptions to keep in mind. For additional information on the bit level format and signal timing relationships of
commands, see Command Protocol on page 15.
– The host always controls the Chip Select (CS#), Serial Clock (SCK), and Serial Input (SI) - SI for single bit wide transfers. The
memory drives Serial Output (SO) for single bit read transfers. The host and memory alternately drive the IO0-IO3 signals
during Dual and Quad transfers.
– All commands begin with the host selecting the memory by driving CS# low before the first rising edge of SCK. CS# is kept
low throughout a command and when CS# is returned high the command ends. Generally, CS# remains low for eight bit
transfer multiples to transfer byte granularity information. Some commands will not be accepted if CS# is returned high not at
an 8-bit boundary.
9.1 Command Set Summary
9.1.1 Extended Addressing
To accommodate addressing above 128 Mb, there are two options:
1. Instructions that always require a 4-byte address, used to access up to 32 Gb of memory:
Command Name Function Instruction (Hex)
4READ Read 13
4FAST_READ Read Fast 0C
4DIOR Dual I/O Read BC
4QIOR Quad I/O Read EC
4DDRQIOR DDR Quad I/O Read EE
4PP Page Program 12
4P4E Parameter 4-kB Erase 21
4SE Erase 64/256 kB DC
4ECCRD ECC Status Read 18
4DYBRD DYB Read E0
4DYBWR DYBWR E1
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2. A 4-byte address mode for backward compatibility to the 3-byte address instructions. The standard 3-byte instructions
can be used in conjunction with a 4-byte address mode controlled by the Address Length configuration bit (CR2V[7]). The
default value of CR2V[7] is loaded from CR2NV[7] (following power-up, hardware reset, or software reset), to enable
default 3-byte (24-bit) or 4-byte (32-bit) addressing. When the address length (CR2V[7]) set to 1, the legacy commands
are changed to require 4-bytes (32-bits) for the address field. The following instructions can be used in conjunction with
the 4-byte address mode configuration to switch from 3 bytes to 4 bytes of address field.
9.1.2 Command Summary by Function
4PPBRD PPB Read E2
4PPBP PPB Program E3
Command Name Function Instruction (Hex)
READ Read 03
FAST_READ Read Fast 0B
DIOR Dual I/O Read BB
QIOR Quad I/O Read EB
DDRQIOR DDR Quad I/O Read) ED
PP Page Program 02
P4E Parameter 4-kB Erase 20
SE Erase 64 / 256 kB D8
RDAR Read Any Register 65
WRAR Write Any Register 71
EES Evaluate Erase Status D0
OTPP OTP Program 42
OTPR OTP Read 4B
ECCRD ECC Status Read 19
DYBRD DYB Read FA
DYBWR DYBWR FB
PPBRD PPB Read FC
PPBP PPB Program FD
Table 57. S25FS-S Family Command Set (sorted by function)
Function Command Name Command Description Instruction
Value (Hex)
Maximum
Frequency
(MHz)
Address
Length
(Bytes)
QPI
Read
Device ID
RDID Read ID (JEDEC Manufacturer ID and JEDEC CFI) 9F 133 0 Yes
RSFDP Read JEDEC Serial Flash Discoverable Parameters 5A 50 3 Yes
RDQID Read Quad ID AF 133 0 Ye s
Command Name Function Instruction (Hex)
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Register
Access
RDSR1 Read Status Register 1 05 133 0 Ye s
RDSR2 Read Status Register 2 07 133 0 No
RDCR Read Configuration Register 1 35 133 0 No
RDAR Read Any Register 65 133 3 or 4 Yes
WRR Write Register (Status 1, Configuration 1) 01 133 0 Yes
WRDI Write Disable 04 133 0 Yes
WREN Write Enable 06 133 0 Ye s
WRAR Write Any Register 71 133 3 or 4 Yes
CLSR
Clear Status Register 1 - Erase/Prog. Fail Reset
This command may be disabled and the instruction value
instead used for a program / erase resume command - see
Configuration Register 3 on page 63
30 133 0 Yes
CLSR Clear Status Register 1 (alternate instruction) -
Erase/Prog. Fail Reset 82 133 0 Yes
4BAM Enter 4-byte Address Mode B7 133 0 No
SBL Set Burst Length C0 133 0 No
EES Evaluate Erase Status D0 133 3 or 4 Yes
ECCRD ECC Read 19 133 3 or 4 Yes
4ECCRD ECC Read 18 133 4 Ye s
DLPRD Data Learning Pattern Read 41 133 0 No
PNVDLR Program NV Data Learning Register 43 133 0 No
WVDLR Write Volatile Data Learning Register 4A 133 0 No
Read Flash
Array
READ Read 03 50 3 or 4 No
4READ Read 13 50 4 No
FAST_READ Fast Read 0B 133 3 or 4 No
4FAST_READ Fast Read 0C 133 4 No
DIOR Dual I/O Read BB 66 3 or 4 No
4DIOR Dual I/O Read BC 66 4 No
QIOR Quad I/O Read EB 133 3 or 4 Yes
4QIOR Quad I/O Read EC 133 4 Ye s
DDRQIOR DDR Quad I/O Read ED 80 3 or 4 Yes
4DDRQIOR DDR Quad I/O Read EE 80 4 Ye s
Program
Flash Array
PP Page Program 02 133 3 or 4 Yes
4PP Page Program 12 133 4 Yes
Erase
Flash Array
P4E Parameter 4-kB Sector Erase 20 133 3 or 4 Yes
4P4E Parameter 4-kB Sector Erase 21 133 4 Ye s
SE Erase 64 kB or 256 kB D8 133 3 or 4 Yes
4SE Erase 64 kB or 256 kB DC 133 4 Yes
BE Bulk Erase 60 133 0 Yes
BE Bulk Erase (alternate instruction) C7 133 0 Ye s
Table 57. S25FS-S Family Command Set (sorted by function) (Continued)
Function Command Name Command Description Instruction
Value (Hex)
Maximum
Frequency
(MHz)
Address
Length
(Bytes)
QPI
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Note:
1. Commands not supported in QPI Mode have undefined behavior if sent when the device is in QPI Mode.
9.1.3 Read Device Identification
There are multiple commands to read information about the device manufacturer, device type, and device features. SPI memories
from different vendors have used different commands and formats for reading information about the memories. The S25FS-S family
supports the three device information commands.
Erase
/Program
Suspend
/Resume
EPS Erase / Program Suspend 75 133 0 Yes
EPS Erase / Program Suspend (alternate instruction) 85 133 0 Ye s
EPS Erase / Program Suspend (alternate instruction) B0 133 0 Yes
EPR Erase / Program Resume 7A 133 0 Yes
EPR Erase / Program Resume (alternate instruction) 8A 133 0 Yes
EPR
Erase / Program Resume (alternate instruction)
This command may be disabled and the instruction value
instead used for a clear status command - see Configuration
Register 3 on page 63
30 133 0 Yes
One-Time
Program
Array
OTPP OTP Program 42 133 3 or 4 No
OTPR OTP Read 4B 133 3 or 4 No
Advanced
Sector
Protection
DYBRD DYB Read FA 133 3 or 4 Yes
4DYBRD DYB Read E0 133 4 Ye s
DYBWR DYB Write FB 133 3 or 4 Yes
4DYBWR DYB Write E1 133 4 Yes
PPBRD PPB Read FC 133 3 or 4 No
4PPBRD PPB Read E2 133 4 No
PPBP PPB Program FD 133 3 or 4 No
4PPBP PPB Program E3 133 4 No
PPBE PPB Erase E4 133 0 No
ASPRD ASP Read 2B 133 0 No
ASPP ASP Program 2F 133 0 No
PLBRD PPB Lock Bit Read A7 133 0 No
PLBWR PPB Lock Bit Write A6 133 0 No
PASSRD Password Read E7 133 0 No
PASSP Password Program E8 133 0 No
PASSU Password Unlock E9 133 0 No
Reset
RSTEN Software Reset Enable 66 133 0 Ye s
RST Software Reset 99 133 0 Yes
RESET Legacy Software Reset F0 133 0 No
MBR Mode Bit Reset FF 133 0 Yes
DPD DPD Enter Deep Power-Down Mode B9 133 0 Yes
RES Release from Deep Power-Down Mode AB 133 0 Yes
Table 57. S25FS-S Family Command Set (sorted by function) (Continued)
Function Command Name Command Description Instruction
Value (Hex)
Maximum
Frequency
(MHz)
Address
Length
(Bytes)
QPI
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9.1.4 Register Read or Write
There are multiple registers for reporting embedded operation status or controlling device configuration options. There are
commands for reading or writing these registers. Registers contain both volatile and non-volatile bits. Non-Volatile bits in registers
are automatically erased and programmed as a single (write) operation.
9.1.4.1 Monitoring Operation Status
The host system can determine when a write, program, erase, suspend or other embedded operation is complete by monitoring the
Write-In-Progress (WIP) bit in the Status Register. The Read from Status Register 1 command or Read Any Register command
provides the state of the WIP bit. The program error (P_ERR) and erase error (E_ERR) bits in the Status Register indicate whether
the most recent program or erase command has not completed successfully. When P_ERR or E_ERR bits are set to 1, the WIP bit
will remain set to one indicating the device remains busy and unable to receive most new operation commands. Only Status Read
(RDSR1 05h), Read Any Register (RDAR 65h), Status Clear (CLSR 30h or 82h), and Software Reset (RSTEN 66h, RST 99h or
RESET F0h) are valid commands when P_ERR or E_ERR is set to 1. A Clear Status Register (CLSR) followed by a Write Disable
(WRDI) command must be sent to return the device to standby state. Clear Status Register clears the WIP, P_ERR, and E_ERR
bits. WRDI clears the WEL bit. Alternatively, hardware reset, or software reset (RST or RESET) may be used to return the device to
standby state.
9.1.4.2 Configuration
There are commands to read, write, and protect registers that control interface path width, interface timing, interface address length,
and some aspects of data protection.
9.1.5 Read Flash Array
Data may be read from the memory starting at any byte boundary. Data bytes are sequentially read from incrementally higher byte
addresses until the host ends the data transfer by driving CS# input High. If the byte address reaches the maximum address of the
memory array, the read will continue at address zero of the array.
There are several different read commands to specify different access latency and data path widths. Double Data Rate (DDR)
commands also define the address and data bit relationship to both SCK edges:
The Read command provides a single address bit per SCK rising edge on the SI signal with read data returning a single bit per
SCK falling edge on the SO signal. This command has zero latency between the address and the returning data but is limited to a
maximum SCK rate of 50MHz.
Other read commands have a latency period between the address and returning data but can operate at higher SCK frequencies.
The latency depends on a Configuration Register read latency value.
The Fast Read command provides a single address bit per SCK rising edge on the SI signal with read data returning a single bit
per SCK falling edge on the SO signal.
Dual or Quad I/O Read commands provide address two bits or four bits per SCK rising edge with read data returning two bits, or
four bits of data per SCK falling edge on the IO0-IO3 signals.
Quad Double Data Rate read commands provide address four bits per every SCK edge with read data returning four bits of data
per every SCK edge on the IO0-IO3 signals.
9.1.6 Program Flash Array
Programming data requires two commands: Write Enable (WREN), and Page Program (PP). The Page Program command accepts
from 1 byte up to 256 or 512 consecutive bytes of data (page) to be programmed in one operation. Programming means that bits can
either be left at 1, or programmed from 1 to 0. Changing bits from 0 to 1 requires an erase operation.
9.1.7 Erase Flash Array
The Parameter Sector Erase, Sector Erase, or Bulk Erase commands set all the bits in a sector or the entire memory array to 1. A bit
needs to be first erased to 1 before programming can change it to a 0. While bits can be individually programmed from a 1 to 0,
erasing bits from 0 to 1 must be done on a sector-wide or array-wide (bulk) level. The Write Enable (WREN) command must precede
an erase command.
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9.1.8 OTP, Block Protection, and Advanced Sector Protection
There are commands to read and program a separate One-Time Programmable (OTP) array for permanent data such as a serial
number. There are commands to control a contiguous group (block) of flash memory array sectors that are protected from program
and erase operations. There are commands to control which individual flash memory array sectors are protected from program and
erase operations.
9.1.9 Reset
There are commands to reset to the default conditions present after power-on to the device. However, the software reset commands
do not affect the current state of the FREEZE or PPB Lock bits. In all other respects a software reset is the same as a hardware
reset.
There is a command to reset (exit from) the Continuous Read mode.
9.1.10 DPD
A Deep Power-Down (DPD) mode is supported by the FS-S family of devices. If the device has been placed in DPD mode by the
DPD (B9h) command, the interface standby current is IDPD. The DPD command is accepted only while the device is not performing
an embedded operation as indicated by the Status Register-1 volatile Write In Progress (WIP) bit being cleared to zero
(SR1V[0] = 0). While in DPD mode, the device ignores all commands except the Release from DPD (RES ABh) command, that will
return the device to the Interface Standby state after a delay of tRES.
9.1.11 Reserved
Some instructions are reserved for future use. In this generation of the S25FS-S family some of these command instructions may be
unused and not affect device operation, some may have undefined results.
Some commands are reserved to ensure that a legacy or alternate source device command is allowed without effect. This allows
legacy software to issue some commands that are not relevant for the current generation S25FS-S family with the assurance these
commands do not cause some unexpected action.
Some commands are reserved for use in special versions of the FS-S not addressed by this document or for a future generation.
This allows new host memory controller designs to plan the flexibility to issue these command instructions. The command format is
defined if known at the time this document revision is published.
9.2 Identification Commands
9.2.1 Read Identification (RDID 9Fh)
The Read Identification (RDID) command provides read access to manufacturer identification, device identification, and Common
Flash Interface (CFI) information. The manufacturer identification is assigned by JEDEC. The CFI structure is defined by JEDEC
standard. The device identification and CFI values are assigned by Cypress.
The JEDEC Common Flash Interface (CFI) specification defines a device information structure, which allows a vendor-specified
software flash management program (driver) to be used for entire families of flash devices. Software support can then be
device-independent, JEDEC manufacturer ID independent, forward and backward-compatible for the specified flash device families.
System vendors can standardize their flash drivers for long-term software compatibility by using the CFI values to configure a family
driver from the CFI information of the device in use.
Any RDID command issued while a program, erase, or write cycle is in progress is ignored and has no effect on execution of the
program, erase, or write cycle that is in progress.
The RDID instruction is shifted on SI. After the last bit of the RDID instruction is shifted into the device, a byte of manufacturer
identification, two bytes of device identification, extended device identification, and CFI information will be shifted sequentially out on
SO. As a whole this information is referred to as ID-CFI. See Device ID and Common Flash Interface (ID-CFI) Address Map
on page 128 for the detail description of the ID-CFI contents.
Continued shifting of output beyond the end of the defined ID-CFI address space will provide undefined data. The RDID command
sequence is terminated by driving CS# to the logic high state anytime during data output.
The maximum clock frequency for the RDID command is 133 MHz.
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Figure 49. Read Identification (RDID) Command Sequence
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0-IO3 and the returning data is shifted
out on IO0-IO3.
Figure 50. Read Identification (RDID) QPI Mode Command
9.2.2 Read Quad Identification (RDQID AFh)
The Read Quad Identification (RDQID) command provides read access to manufacturer identification, device identification, and
Common Flash Interface (CFI) information. This command is an alternate way of reading the same information provided by the
RDID command while in QPI Mode. In all other respects the command behaves the same as the RDID command.
The command is recognized only when the device is in QPI Mode (CR2V[6]=1). The instruction is shifted in on IO0-IO3. After the last
bit of the instruction is shifted into the device, a byte of manufacturer identification, two bytes of device identification, extended
device identification, and CFI information will be shifted sequentially out on IO0-IO3. As a whole this information is referred to as
ID-CFI. See Device ID and Common Flash Interface (ID-CFI) Address Map on page128 for the detail description of the ID-CFI
contents.
Continued shifting of output beyond the end of the defined ID-CFI address space will provide undefined data. The command
sequence is terminated by driving CS# to the logic high state anytime during data output.
The maximum clock frequency for the command is 133 MHz.
Figure 51. Read Quad Identification (RDQID) Command Sequence
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Data 1 Data N
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 4 0 4 0 4 0 4 0 4 0
5 1 5 1 5 1 5 1 5 1 5 1
6 2 6 2 6 2 6 2 6 2 6 2
7 3 7 3 7 3 7 3 7 3 7 3
Instruction D1 D2 D3 D4 D5
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 4 0 4 0 4 0 4 0 4 0
5 1 5 1 5 1 5 1 5 1 5 1
6 2 6 2 6 2 6 2 6 2 6 2
7 3 7 3 7 3 7 3 7 3 7 3
Instruction D1 D2 D3 D4 D5
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9.2.3 Read Serial Flash Discoverable Parameters (RSFDP 5Ah)
The command is initiated by shifting on SI the instruction code “5Ah”, followed by a 24-bit address of 000000h, followed by 8 dummy
cycles. The SFDP bytes are then shifted out on SO starting at the falling edge of SCK after the dummy cycles. The SFDP bytes are
always shifted out with the MSB first. If the 24-bit address is set to any other value, the selected location in the SFDP space is the
starting point of the data read. This enables random access to any parameter in the SFDP space. The RSFDP command is
supported up to 50 MHz.
Figure 52. RSFDP Command Sequence
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3 and the returning data is shifted
out on IO0–IO3.
Figure 53. RSFDP QPI Mode Command Sequence
9.3 Register Access Commands
9.3.1 Read Status Register 1 (RDSR1 05h)
The Read Status Register 1 (RDSR1) command allows the Status Register 1 contents to be read from SO. The volatile version of
Status Register 1 (SR1V) contents may be read at any time, even while a program, erase, or write operation is in progress. It is
possible to read Status Register 1 continuously by providing multiples of eight clock cycles. The status is updated for each eight
cycle read. The maximum clock frequency for the RDSR1 (05h) command is 133 MHz.
Figure 54. Read Status Register 1 (RDSR1) Command Sequence
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0-IO3 and the returning data is shifted
out on IO0-IO3, two clock cycles per byte.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 23 1 0
7 6 5 4 3 2 1 0
Instruction Address Dummy Cycles Data 1
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 20 4 0 4 0 4 0 4 0 4 0
5 1 21 5 1 5 1 5 1 5 1 5 1
6 2 22 6 2 6 2 6 2 6 2 6 2
7 3 23 7 3 7 3 7 3 7 3 7 3
Instruct. Address Dummy D1 D2 D3 D4
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Status Updated Status
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Figure 55. Read Status Register 1 (RDSR1) QPI Mode Command
9.3.2 Read Status Register 2 (RDSR2 07h)
The Read Status Register 2 (RDSR2) command allows the Status Register 2 contents to be read from SO. The Status Register 2
contents may be read at any time, even while a program, erase, or write operation is in progress. It is possible to read the Status
Register 2 continuously by providing multiples of eight clock cycles. The status is updated for each eight cycle read. The maximum
clock frequency for the RDSR2 command is 133 MHz.
Figure 56. Read Status Register 2 (RDSR2) Command
In QPI Mode, Status Register 2 may be read via the Read Any Register command, see Read Any Register (RDAR 65h) on page 93
9.3.3 Read Configuration Register (RDCR 35h)
The Read Configuration Register (RDCR) command allows the volatile Configuration Register (CR1V) contents to be read from SO.
It is possible to read CR1V continuously by providing multiples of eight clock cycles. The Configuration Register contents may be
read at any time, even while a program, erase, or write operation is in progress.
Figure 57. Read Configuration Register (RDCR) Command Sequence
In QPI Mode, Configuration Register 1 may be read via the Read Any Register command, see Section 9.3.13, Read Any Register
(RDAR 65h) on page 93
9.3.4 Write Registers (WRR 01h)
The Write Registers (WRR) command allows new values to be written to both the Status Register 1 and Configuration Register 1.
Before the Write Registers (WRR) command can be accepted by the device, a Write Enable (WREN) command must be received.
After the Write Enable (WREN) command has been decoded successfully, the device will set the Write Enable Latch (WEL) in the
Status Register to enable any write operations.
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 4 0 4 0 4 0 4 0 4 0
5 1 5 1 5 1 5 1 5 1 5 1
6 2 6 2 6 2 6 2 6 2 6 2
7 3 7 3 7 3 7 3 7 3 7 3
Instruct. D1 D2 D3 D4 D5
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Status Updated Status
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Register Read Repeat Register Read
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The Write Registers (WRR) command is entered by shifting the instruction and the data bytes on SI. The Status Register is one data
byte in length.
The WRR operation first erases the register then programs the new value as a single operation. The Write Registers (WRR)
command will set the P_ERR or E_ERR bits if there is a failure in the WRR operation. See Status Register 1 Volatile (SR1V)
on page 55 for a description of the error bits. Any Status or Configuration Register bit reserved for the future must be written as a 0.
CS# must be driven to the logic high state after the eighth or sixteenth bit of data has been latched. If not, the Write Registers (WRR)
command is not executed. If CS# is driven high after the eighth cycle then only the Status Register 1 is written; otherwise, after the
sixteenth cycle both the Status and Configuration Registers are written.
As soon as CS# is driven to the logic high state, the self-timed Write Registers (WRR) operation is initiated. While the Write
Registers (WRR) operation is in progress, the Status Register may still be read to check the value of the Write-In Progress (WIP) bit.
The Write-In Progress (WIP) bit is a 1 during the self-timed Write Registers (WRR) operation, and is a 0 when it is completed. When
the Write Registers (WRR) operation is completed, the Write Enable Latch (WEL) is set to a 0. The maximum clock frequency for the
WRR command is 133 MHz.
This command is also supported in QPI Mode. In QPI Mode the instruction and data is shifted in on IO0–IO3, two clock cycles per
byte.
Figure 58. Write Registers (WRR) Command Sequence – 8-Data Bits
Figure 59. Write Registers (WRR) Command Sequence – 16-Data Bits
Figure 60. Write Registers (WRR) Command Sequence – 16-Data Bits QPI Mode
The Write Registers (WRR) command allows the user to change the values of the Block Protect (BP2, BP1, and BP0) bits in either
the non-volatile Status Register 1 or in the volatile Status Register 1, to define the size of the area that is to be treated as read-only.
The BPNV_O bit (CR1NV[3]) controls whether WRR writes the non-volatile or volatile version of Status Register 1. When
CR1NV[3] = 0 WRR writes SR1NV[4:2]. When CR1NV[3] = 1 WRR writes SR1V[4:2].
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Status Register 1
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Status Register 1 Input Configuration Register 1
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 4 0 4 0
5 1 5 1 5 1
6 2 6 2 6 2
7 3 7 3 7 3
Instruct. Input Status Input Config
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The Write Registers (WRR) command also allows the user to set the Status Register Write Disable (SRWD) bit to a 1 or a 0. The
Status Register Write Disable (SRWD) bit and Write Protect (WP#) signal allow the BP bits to be hardware protected.
When the Status Register Write Disable (SRWD) bit of the Status Register is a 0 (its initial delivery state), it is possible to write to the
Status Register provided that the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) command,
regardless of the whether Write Protect (WP#) signal is driven to the logic high or logic low state.
When the Status Register Write Disable (SRWD) bit of the Status Register is set to a 1, two cases need to be considered, depending
on the state of Write Protect (WP#):
If Write Protect (WP#) signal is driven to the logic high state, it is possible to write to the Status and Configuration Registers
provided that the Write Enable Latch (WEL) bit has previously been set to a 1 by initiating a Write Enable (WREN) command.
If Write Protect (WP#) signal is driven to the logic low state, it is not possible to write to the Status and Configuration Registers
even if the Write Enable Latch (WEL) bit has previously been set to a 1 by a Write Enable (WREN) command. Attempts to write to
the Status and Configuration Registers are rejected, not accepted for execution, and no error indication is provided. As a
consequence, all the data bytes in the memory area that are protected by the Block Protect (BP2, BP1, BP0) bits of the Status
Register, are also hardware protected by WP#.
The WP# hardware protection can be provided:
by setting the Status Register Write Disable (SRWD) bit after driving Write Protect (WP#) signal to the logic low state;
or by driving Write Protect (WP#) signal to the logic low state after setting the Status Register Write Disable (SRWD) bit to a 1.
The only way to release the hardware protection is to pull the Write Protect (WP#) signal to the logic high state. If WP# is
permanently tied high, hardware protection of the BP bits can never be activated.
Notes:
1. The Status Register ori ginally shows 00h when the device is first shipped from Cypress to the customer .
2. Hardware protection is disabled when Quad Mode is enabled (CR1V[1] = 1). WP# be comes IO2; therefore, it cannot be utilized.
9.3.5 Write Enable (WREN 06h)
The Write Enable (WREN) command sets the Write Enable Latch (WEL) bit of the Status Register 1 (SR1V[1]) to a 0. The Write
Enable Latch (WEL) bit must be set to a 1 by issuing the Write Enable (WREN) command to enable write, program and erase
commands.
CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI. Without CS# being
driven to the logic high state after the eighth bit of the instruction byte has been latched in on SI, the write enable operation will not
be executed.
Table 58. Block Protection Modes
WP# SRWD
Bit Mode Write Protection of Registers Memory Content
Protected Area Unprotected Area
11
Software
Protected
Status and Configuration Registers are
Writable (if WREN command has set the
WEL bit). The values in the SRWD, BP2,
BP1, and BP0 bits and those in the
Configuration Register can be changed.
Protected against
Page Program,
Sector Erase, and
Bulk Erase.
Ready to accept
Page Program,
and Sector Erase
commands.
10
00
01
Hardware
Protected
Status and Configuration Registers are
Hardware Write Protected. The values in the
SRWD, BP2, BP1, and BP0 bits and those in
the Configuration Register cannot be
changed.
Protected against
Page Program,
Sector Erase, and
Bulk Erase.
Ready to accept
Page Program or
Erase commands.
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Figure 61. Write Enable (WREN) Command Sequence
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0-IO3, two clock cycles per byte.
Figure 62. Write Enable (WREN) Command Sequence QPI Mode
9.3.6 Write Disable (WRDI 04h)
The Write Disable (WRDI) command clears the Write Enable Latch (WEL) bit of the Status Register 1 (SR1V[1]) to a 1.
The Write Enable Latch (WEL) bit may be cleared to a 0 by issuing the Write Disable (WRDI) command to disable Page Program
(PP), Sector Erase (SE), Bulk Erase (BE), Write Registers (WRR or WRAR), OTP Program (OTPP), and other commands, that
require WEL be set to 1 for execution. The WRDI command can be used by the user to protect memory areas against inadvertent
writes that can possibly corrupt the contents of the memory. The WRDI command is ignored during an embedded operation while
WIP bit =1.
CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI. Without CS# being
driven to the logic high state after the eighth bit of the instruction byte has been latched in on SI, the write disable operation will not
be executed.
Figure 63. Write Disable (WRDI) Command Sequence
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3, two clock cycles per byte.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0
5 1
6 2
7 3
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
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Figure 64. Write Disable (WRDI) Command Sequence QPI Mode
9.3.7 Clear Status Register (CLSR 30h or 82h)
The Clear Status Register command resets bit SR1V[5] (Erase Fail Flag) and bit SR1V[6] (Program Fail Flag). It is not necessary to
set the WEL bit before a Clear Status Register command is executed. The Clear Status Register command will be accepted even
when the device remains busy with WIP set to 1, as the device does remain busy when either error bit is set. The WEL bit will be
unchanged after this command is executed.
The legacy Clear Status Register (CLSR 30h) instruction may be disabled and the 30h instruction value instead used for a program
/ erase resume command - see Configuration Register 3 on page 63. The Clear Status Register alternate instruction (CLSR 82h) is
always available to clear the Status Register.
Figure 65. Clear Status Register (CLSR) Command Sequence
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3, two clock cycles per byte.
Figure 66. Clear Status Register (CLSR) Command Sequence QPI Mode
9.3.8 ECC Status Register Read (ECCRD 19h or 4EECRD 18h)
To read the ECC Status Register, the command is followed by the ECC unit address, the four least significant bits (LSB) of address
must be set to zero. This is followed by the number of dummy cycles selected by the read latency value in CR2V[3:0]. Then the 8-bit
contents of the ECC Register, for the ECC unit selected, are shifted out on SO 16 times, once for each byte in the ECC Unit. If CS#
remains low the next ECC unit status is sent through SO 16 times, once for each byte in the ECC Unit. The maximum operating
clock frequency for the ECC READ command is 133 MHz.
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0
5 1
6 2
7 3
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0
5 1
6 2
7 3
Instruction
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Figure 67. ECC Status Register Read Command Sequence
Note
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command 19h.
2. A = MSB of address = 31 with command 18h
This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3, two clock cycles per byte.
Figure 68. ECCRD (19h) o r 4ECCRD (18h), QPI Mode, Command Sequence
Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command 19h.
2. A = MSB of address = 31 with command 18h.
9.3.9 Program NVDLR (PNVDLR 43h)
Before the Program NVDLR (PNVDLR) command can be accepted by the device, a Write Enable (WREN) command must be
issued and decoded by the device. After the Write Enable (WREN) command has been decoded successfully, the device will set the
Write Enable Latch (WEL) to enable the PNVDLR operation.
The PNVDLR command is entered by shifting the instruction and the data byte on SI.
CS# must be driven to the logic high state after the eighth bit of data has been latched. If not, the PNVDLR command is not
executed. As soon as CS# is driven to the logic high state, the self-timed PNVDLR operation is initiated. While the PNVDLR
operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In
Progress (WIP) bit is a 1 during the self-timed PNVDLR cycle, and is a 0. when it is completed. The PNVDLR operation can report a
program error in the P_ERR bit of the Status Register. When the PNVDLR operation is completed, the Write Enable Latch (WEL) is
set to a 0. The maximum clock frequency for the PNVDLR command is 133 MHz.
Figure 69. Program NVDLR (PNVDLR) Command Sequence
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 1 0
7 6 5 4 3 2 1 0
Instruction Address Dummy Cycles Data 1
CS#
SCLK
IO0
IO1
IO2
IO3
Phase
4 0 A-3 4 0 4 0 4 0 4 0 4 0
5 1 A-2 5 1 5 1 5 1 5 1 5 1
6 2 A-1 6 2 6 2 6 2 6 2 6 2
7 3 A 7 3 7 3 7 3 7 3 7 3
Instruct. Address Dummy D1 D2 D3 D4
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Data
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9.3.10 Write VDLR (WVDLR 4Ah)
Before the Write VDLR (WVDLR) command can be accepted by the device, a Write Enable (WREN) command must be issued and
decoded by the device. After the Write Enable (WREN) command has been decoded successfully, the device will set the Write
Enable Latch (WEL) to enable WVDLR operation.
The WVDLR command is entered by shifting the instruction and the data byte on SI.
CS# must be driven to the logic high state after the eighth bit of data has been latched. If not, the WVDLR command is not executed.
As soon as CS# is driven to the logic high state, the WVDLR operation is initiated with no delays. The maximum clock frequency for
the PNVDLR command is 133 MHz.
Figure 70. Write VDLR (WVDLR) Command Sequence
9.3.11 Data Learning Pattern Read (DLPRD 41h)
The instruction is shifted on SI, then the 8-bit DLP is shifted out on SO. It is possible to read the DLP continuously by providing
multiples of eight clock cycles. The maximum operating clock frequency for the DLPRD command is 133 MHz.
Figure 71. DLP Read (DLPRD) Command Sequence
9.3.12 Enter 4-Byte Address Mode (4BAM B7h)
The enter 4-byte Address Mode (4BAM) command sets the volatile Address Length bit (CR2V[7]) to 1 to change most 3-byte
address commands to require 4 bytes of address. The Read SFDP (RSFDP) command is the only 3-byte command that is not
affected by the Address Length bit. RSFDP is required by the JEDEC JESD216 standard to always have only 3 bytes of address.
A hardware or software reset is required to exit the 4-byte address mode.
Figure 72. Enter 4-Byte Address Mode (4BAM B7h) Command Sequence
9.3.13 Read Any Register (RDAR 65h)
The Read Any Register (RDAR) command provides a way to read all device registers - non-volatile and volatile. The instruction is
followed by a 3- or 4-byte address (depending on the address length configuration CR2V[7], followed by a number of latency
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Data
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Register Read Repeat Register Read
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
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(dummy) cycles set by CR2V[3:0]. Then the selected register contents are returned. If the read access is continued the same
addressed register contents are returned until the command is terminated - only one register is read by each RDAR command.
Reading undefined locations provides undefined data.
The RDAR command may be used during embedded operations to read Status Register 1 (SR1V).
The RDAR command is not used for reading registers that act as a window into a larger array:ECCSR, PPBAR, and DYBAR. There
are separate commands required to select and read the location in the array accessed.
The RDAR command will read invalid data from the PASS register locations if the ASP Password protection mode is selected by
programming ASPR[2] to 0.
Table 59. Register Address Map
Byte Address (Hex) Register Name Description
00000000 SR1NV
Non-Volatile Status and Configuration Registers
00000001 N/A
00000002 CR1NV
00000003 CR2NV
00000004 CR3NV
00000005 CR4NV
... N/A
00000010 NVDLR Non-Volatile Data Learning Register
... N/A
00000020 PASS[7:0]
Non-Volatile Password Register
00000021 PASS[15:8]
00000022 PASS[23:16]
00000023 PASS[31:24]
00000024 PASS[39:32]
00000025 PASS[47:40]
00000026 PASS[55:48]
00000027 PASS[63:56]
... N/A
00000030 ASPR[7:0] Non-Volatile
00000031 ASPR[15:8]
... N/A
00800000 SR1V
Volatile Status and Configuration Registers
00800001 SR2V
00800002 CR1V
00800003 CR2V
00800004 CR3V
00800005 CR4V
... N/A
00800010 VDLR Volatile Data Learning Register
... N/A
00800040 PPBL Volatile PPB Lock Register
... N/A
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Figure 73. Read Any Register Read Command Sequence
Note:
1. A = MSB of address = 23 for Address length CR2V[7] = 0, or 31 for CR2V[7] = 1
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0-IO3, two clock cycles per byte.
Figure 74. Read Any Register, QPI Mode, Command Sequence
Note:
A = MSB of address = 23 for A ddress length CR2V[7] = 0, or 31 for CR2V[7] = 1
9.3.14 Write Any Register (WRAR 71h)
The Write Any Register (WRAR) command provides a way to write any device register - non-volatile or volatile. The instruction is
followed by a 3- or 4-byte address (depending on the address length configuration CR2V[7], followed by one byte of data to write in
the address selected register.
Before the WRAR command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the
device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The WIP bit in SR1V may be
checked to determine when the operation is completed. The P_ERR and E_ERR bits in SR1V may be checked to determine if any
error occurred during the operation.
Some registers have a mixture of bit types and individual rules controlling which bits may be modified. Some bits are read only,
some are OTP.
Read only bits are never modified and the related bits in the WRAR command data byte are ignored without setting a program or
erase error indication (P_ERR or E_ERR in SR1V). Hence, the value of these bits in the WRAR data byte do not matter.
OTP bits may only be programmed to the level opposite of their default state. Writing of OTP bits back to their default state is
ignored and no error is set.
Non-Volatile bits which are changed by the WRAR data, require non-volatile register write time (tW) to be updated. The update
process involves an erase and a program operation on the non-volatile register bits. If either the erase or program portion of the
update fails the related error bit and WIP in SR1V will be set to 1.
Volatile bits which are changed by the WRAR data, require the volatile register write time (tCS) to be updated.
Status Register 1 may be repeatedly read (polled) to monitor the Write-In-Progress (WIP) bit (SR1V[0]) and the error bits
(SR1V[6,5]) to determine when the register write is completed or failed. If there is a write failure, the clear status command is used to
clear the error status and enable the device to return to standby state.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 1 0
7 6 5 4 3 2 1 0
Instruction Address Dummy Cycles Data 1
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However, the PPBL register can not be written by the WRAR command. Only the PPB Lock Bit Write (PLBWR) command can write
the PPBL register.
The command sequence and behavior is the same as the PP or 4PP command with only a single byte of data provided. See
Section 9.5.2, Page Program (PP 02h or 4PP 12h) on page 105.
The address map of the registers is the same as shown for Section 9.3.13, Read Any Register (RDAR 65h) on page 93.
9.3.15 Set Burst Length (SBL C0h)
The Set Burst Length (SBL) command is used to configure the Burst Wrap feature. Burst Wrap is used in conjunction with Quad I/O
Read and DDR Quad I/O Read, in legacy SPI or QPI Mode, to access a fixed length and alignment of data. Certain applications can
benefit from this feature by improving the overall system code execution performance. The Burst Wrap feature allows applications
that use cache, to start filling a cache line with instruction or data from a critical address first, then fill the remainder of the cache line
afterwards within a fixed length (8/16/32/64-bytes) of data, without issuing multiple read commands.
The Set Burst Length (SBL) command writes the CR4V register to enable or disable the wrapped read feature and set the wrap
boundary. When enabled the wrapped read feature changes the related read commands from sequentially reading until the
command ends, to reading sequentially wrapped within a group of bytes.
When CR4V[4] = 1, the wrap mode is not enabled and unlimited length sequential read is performed.
When CR4V[4] = 0, the wrap mode is enabled and a fixed length and aligned group of 8, 16, 32, or 64 bytes is read starting at the
byte address provided by the read command and wrapping around at the group alignment boundary.
The group of bytes is of length and aligned on an 8-, 16-, 32-, or 64-byte boundary. CR4V[1:0] selects the boundary. See
Configuration Register 4 Volatile (CR4V) on page 66.
The starting address of the read command selects the group of bytes and the first data returned is the addressed byte. Bytes are
then read sequentially until the end of the group boundary is reached. If the read continues the address wraps to the beginning of the
group and continues to read sequentially. This wrapped read sequence continues until the command is ended by CS# returning
high.
The Power-On Reset, hardware reset, or software reset default burst length can be changed by programming CR4NV with the
desired value using the WRAR command.
Table 60. Example Burst Wrap Sequences
CR4V[4,1:0]
Value (Hex)
Wrap
Boundary
(Bytes)
Start Address
(Hex) Address Sequence (Hex)
1X Sequential XXXXXX03 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16, 17, 18, ...
00 8 XXXXXX00 00, 01, 02, 03, 04, 05, 06, 07, 00, 01, 02, ...
00 8 XXXXXX07 07, 00, 01, 02, 03, 04, 05, 06, 07, 00, 01, ...
01 16 XXXXXX02 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 00, 01, 02, 03, ...
01 16 XXXXXX0C 0C, 0D, 0E, 0F, 00, 01, 02, 03, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, ...
02 32 XXXXXX0A 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 1A, 1B, 1C, 1D, 1E, 1F, 00, 01, 02,
03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, ...
02 32 XXXXXX1E 1E, 1F, 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16,
17, 18, 19, 1A, 1B, 1C, 1D, 1E, 1F, 00, ...
03 64 XXXXXX03
03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 1A, 1B,
1C, 1D, 1E, 1F, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 2A, 2B, 2C, 2D, 2E, 2F, 30, 31, 32, 33, 34,
35, 36, 37, 38, 39, 3A, 3B, 3C, 3D, 3E, 3F, 00, 01, 02 ...
03 64 XXXXXX2E
2E, 2F, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 3A, 3B, 3C, 3D, 3E, 3F, 00, 01, 02, 03, 04, 05, 06,
07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 1A, 1B, 1C, 1D, 1E, 1F,
20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 2A, 2B, 2C, 2D, 2E, 2F, ...
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Figure 75. Set Burst Length Command Sequence
9.4 Read Memory Array Commands
Read commands for the main flash array provide many options for prior generation SPI compatibility or enhanced performance SPI:
Some commands transfer address or data on each rising edge of SCK. These are called Single Data Rate commands (SDR).
Some SDR commands transfer address one bit per rising edge of SCK and return data 1bit of data per rising edge of SCK. These
are called Single width commands.
Some SDR commands transfer both address and data two or four bits per rising edge of SCK. These are called Dual I/O for two
bits, Quad I/O, and QPI for four bits. QPI also transfers instruction four bits per rising edge.
Some commands transfer address and data on both the rising edge and falling edge of SCK. These are called Double Data Rate
(DDR) commands.
There are DDR commands for 4 bits of address or data per SCK edge. These are called Quad I/O DDR and QPI DDR for four bit
per edge transfer.
All of these commands, except QPI Read, begin with an instruction code that is transferred one bit per SCK rising edge. QPI Read
transfers the instruction four bits per SCK rising edge.The instruction is followed by either a 3- or 4-byte address transferred at SDR
or DDR. Commands transferring address or data 2 or 4 bits per clock edge are called Multiple I/O (MIO) commands. For S25FS-S
family devices at 256-Mbits or higher density, the traditional SPI 3-byte addresses are unable to directly address all locations in the
memory array. Separate 4-byte address read commands are provided for access to the entire address space. These devices may
be configured to take a 4-byte address from the host system with the traditional 3-byte address commands. The 4-byte address
mode for traditional commands is activated by setting the Address Length bit in Configuration Register 2 to 0. In the FS128S, higher
order address bits above A23 in the 4-byte address commands, or commands using 4-byte address mode are not relevant and are
ignored because the flash array is only 128 Mbits in size.
The Quad I/O and QPI commands provide a performance improvement option controlled by mode bits that are sent following the
address bits. The mode bits indicate whether the command following the end of the current read will be another read of the same
type, without an instruction at the beginning of the read. These mode bits give the option to eliminate the instruction cycles when
doing a series of Quad Read accesses.
Some commands require delay cycles following the address or mode bits to allow time to access the memory array - read latency.
The delay or read latency cycles are traditionally called dummy cycles. The dummy cycles are ignored by the memory thus any data
provided by the host during these cycles is “don’t care” and the host may also leave the SI signal at high impedance during the
dummy cycles. When MIO commands are used the host must stop driving the IO signals (outputs are high impedance) before the
end of last dummy cycle. When DDR commands are used the host must not drive the I/O signals during any dummy cycle. The
number of dummy cycles varies with the SCK frequency or performance option selected via the Configuration Register 2
(CR2V[3:0]) Latency Code. Dummy cycles are measured from SCK falling edge to next SCK falling edge. SPI outputs are
traditionally driven to a new value on the falling edge of each SCK. Zero dummy cycles means the returning data is driven by the
memory on the same falling edge of SCK that the host stops driving address or mode bits.
The DDR commands may optionally have an 8-edge Data Learning Pattern (DLP) driven by the memory, on all data outputs, in the
dummy cycles immediately before the start of data. The DLP can help the host memory controller determine the phase shift from
SCK to data edges so that the memory controller can capture data at the center of the data eye.
When using SDR I/O commands at higher SCK frequencies (>50 MHz), an LC that provides one or more dummy cycles should be
selected to allow additional time for the host to stop driving before the memory starts driving data, to minimize I/O driver conflict.
When using DDR I/O commands with the DLP enabled, an LC that provides five or more dummy cycles should be selected to allow
one cycle of additional time for the host to stop driving before the memory starts driving the 4-cycle DLP.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Data
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Each read command ends when CS# is returned High at any point during data return. CS# must not be returned High during the
mode or dummy cycles before data returns as this may cause mode bits to be captured incorrectly; making it indeterminate as to
whether the device remains in Continuous Read mode.
9.4.1 Read (Read 03h or 4READ 13h)
The instruction
03h (CR2V[7] = 0) is followed by a 3-byte address (A23–A0) or
03h (CR2V[7] = 1) is followed by a 4-byte address (A31–A0) or
13h is followed by a 4-byte address (A31–A0)
Then the memory contents, at the address given, are shifted out on SO. The maximum operating clock frequency for the Read
command is 50 MHz.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
Figure 76. Read Command Sequence (3-Byte Address, 03h or 13h)
Note:
1. A = MSB of address = 23 for CR2V[7] = 0, or 31 for CR2V[7] = 1 or command 13h.
9.4.2 Fast Read (FAST_READ 0Bh or 4FAST_READ 0Ch)
The instruction
0Bh (CR2V[7] = 0) is followed by a 3-byte address (A23–A0) or
0Bh (CR2V[7] = 1) is followed by a 4-byte address (A31–A0) or
0Ch is followed by a 4-byte address (A31–A0)
The address is followed by dummy cycles depending on the latency code set in the Configuration Register CR2V[3:0]. The dummy
cycles allow the device internal circuits additional time for accessing the initial address location. During the dummy cycles the data
value on SO is “don’t care” and may be high impedance. Then the memory contents, at the address given, are shifted out on SO.
The maximum operating clock frequency for Fast Read command is 133 MHz.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Data 1 Data N
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Figure 77. Fast Read (FAST_READ) Command Sequence (3-Byte Address, 0Bh [CR2V[7]=0)
Note:
1. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or co mmand 0Ch.
9.4.3 Dual I/O Read (DIOR BBh or 4DIOR BCh)
The instruction
BBh (CR2V[7] = 0) is followed by a 3-byte address (A23–A0) or
BBh (CR2V[7] = 1) is followed by a 4-byte address (A31–A0) or
BCh is followed by a 4-byte address (A31–A0)
The Dual I/O Read commands improve throughput with two I/O signals — IO0 (SI) and IO1 (SO). This command takes input of the
address and returns read data two bits per SCK rising edge. In some applications, the reduced address input and data output time
might allow for code execution in place (XIP) i.e. directly from the memory device.
The maximum operating clock frequency for Dual I/O Read is 133 MHz.
The Dual I/O Read command has Continuous Read mode bits that follow the address so, a series of Dual I/O Read commands may
eliminate the 8-bit instruction after the first Dual I/O Read command sends a mode bit pattern of Axh that indicates the following
command will also be a Dual I/O Read command. The first Dual I/O Read command in a series starts with the 8-bit instruction,
followed by address, followed by four cycles of mode bits, followed by an optional latency period. If the mode bit pattern is Axh the
next command is assumed to be an additional Dual I/O Read command that does not provide instruction bits. That command starts
with address, followed by mode bits, followed by optional latency.
Variable latency may be added after the mode bits are shifted into SI and SO before data begins shifting out of IO0 and IO1. This
latency period (dummy cycles) allows the device internal circuitry enough time to access data at the initial address. During the
dummy cycles, the data value on SI and SO are “don’t care” and may be high impedance. The number of dummy cycles is
determined by the frequency of SCK. The latency is configured in CR2V[3:0].
The Continuous Read feature removes the need for the instruction bits in a sequence of read accesses and greatly improves code
execution (XIP) performance. The upper nibble (bits 7-4) of the Mode bits control the length of the next Dual I/O Read command
through the inclusion or exclusion of the first byte instruction code. The lower nibble (bits 3-0) of the Mode bits are “don’t care” (“x”)
and may be high impedance. If the Mode bits equal Axh, then the device remains in Dual I/O Continuous Read mode and the next
address can be entered (after CS# is raised high and then asserted low) without the BBh or BCh instruction, as shown in Figure 79
on page 100; thus, eliminating eight cycles of the command sequence. The following sequences will release the device from Dual
I/O Continuous Read mode; after which, the device can accept standard SPI commands:
1. During the Dual I/O Continuous Read command sequence, if the Mode bits are any value other than Axh, then the next
time CS# is raised high the device will be released from Dual I/O con ti no us read mode.
2. Send the Mode Reset command.
Note that the four mode bit cycles are part of the device’s internal circuitry latency time to access the initial address after the last
address cycle that is clocked into IO0 (SI) and IO1 (SO).
It is important that the I/O signals be set to high-impedance at or before the falling edge of the first data out clock. At higher clock
speeds the time available to turn off the host outputs before the memory device begins to drive (bus turn around) is diminished. It is
allowed and may be helpful in preventing I/O signal contention, for the host system to turn off the I/O signal outputs (make them high
impedance) during the last two “don’t care” mode cycles or during any dummy cycles.
Following the latency period the memory content, at the address given, is shifted out two bits at a time through IO0 (SI) and IO1
(SO). Two bits are shifted out at the SCK frequency at the falling edge of SCK signal.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 1 0
7 6 5 4 3 2 1 0
Instruction Address Dummy Cycles Data 1
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The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
CS# should not be driven high during mode or dummy bits as this may make the mode bits indeterminate.
Figure 78. Dual I/O Read Command Sequence (BBh)
Note:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command BBh.
2. A = MSB of address = 31 with command BBh
3. Least significant 4 bits of Mode are don’t care and it is optional for the host to drive these bits. The host may turn off drive dur ing these cycles to increase bus turn
around time between Mode bits from host and returning data from the memory.
Figure 79. Dual I/O Continuous Read Command Sequence (4-Byte Address [CR2V[7] = 1])
Note:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command BBh.
2. A = MSB of address = 31 with command BBh
9.4.4 Quad I/O Read (QIOR EBh or 4QIOR ECh)
The instruction
EBh (CR2V[7] = 0) is followed by a 3-byte address (A23–A0) or
EBh (CR2V[7] = 1) is followed by a 4-byte address (A31–A0) or
ECh is followed by a 4-byte address (A31–A0)
The Quad I/O Read command improves throughput with four I/O signals — IO0–IO3. It allows input of the address bits four bits per
serial SCK clock. In some applications, the reduced instruction overhead might allow for code execution (XIP) directly from S25FS-S
family devices. The Quad bit of the Configuration Register must be set (CR1V[1] = 1) to enable the Quad capability of S25FS-S
family devices.
The maximum operating clock frequency for Quad I/O Read is 133 MHz.
For the Quad I/O Read command, there is a latency required after the mode bits (described below) before data begins shifting out of
IO0-IO3. This latency period (i.e., dummy cycles) allows the device’s internal circuitry enough time to access data at the initial
address. During latency cycles, the data value on IO0–IO3 are “don’t care” and may be high impedance. The number of dummy
cycles is determined by the frequency of SCK. The latency is configured in CR2V[3:0].
Following the latency period, the memory contents at the address given, is shifted out four bits at a time through IO0–IO3. Each
nibble (4 bits) is shifted out at the SCK frequency by the falling edge of the SCK signal.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 A-1 2 0 6 4 2 0 6 4 2 0 6 4 2 0
A 3 1 7 5 3 1 7 5 3 1 7 5 3 1
Instruction Address Mode Dum Data 1 Data 2
CS#
SCK
IO0
IO1
Phase
6 4 2 0 A-1 2 0 6 4 2 0 6 4 2 0 6 4 2 0
7 5 3 1 A 3 1 7 5 3 1 7 5 3 1 7 5 3 1
Data N Address Mode Dum Data 1 Data 2
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instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
Address jumps can be done without the need for additional Quad I/O Read instructions. This is controlled through the setting of the
Mode bits (after the address sequence, as shown in Figure 80, Quad I/O Read Command Sequence (EBh or ECh) on page 101).
This added feature removes the need for the instruction sequence and greatly improves code execution (XIP). The upper nibble (bits
7-4) of the Mode bits control the length of the next Quad I/O instruction through the inclusion or exclusion of the first byte instruction
code. The lower nibble (bits 3-0) of the Mode bits are “don’t care” (“x”). If the Mode bits equal Axh, then the device remains in Quad
I/O High Performance Read mode and the next address can be entered (after CS# is raised high and then asserted low) without
requiring the EBh or ECh instruction, as shown in Figure 82, Continuous Quad I/O Read Command Sequence (EBh or ECh)
on page 102; thus, eliminating eight cycles for the command sequence. The following sequences will release the device from Quad
I/O High Performance Read mode; after which, the device can accept standard SPI commands:
1. During the Quad I/O Read Command Sequence, if the Mode bits are any value other than Axh, then the next time CS# is
raised high the device will be released from Quad I/O High Performance Read mode.
2. Send the Mode Reset command.
Note that the two mode bit clock cycles and additional wait states (i.e., dummy cycles) allow the device’s internal circuitry latency
time to access the initial address after the last address cycle that is clocked into IO0–IO3.
It is important that the IO0–IO3 signals be set to high-impedance at or before the falling edge of the first data out clock. At higher
clock speeds the time available to turn off the host outputs before the memory device begins to drive (bus turn around) is diminished.
It is allowed and may be helpful in preventing IO0–IO3 signal contention, for the host system to turn off the IO0–IO3 signal outputs
(make them high impedance) during the last “don’t care” mode cycle or during any dummy cycles.
CS# should not be driven high during mode or dummy bits as this may make the mode bits indeterminate.
In QPI Mode (CR2V[6] = 1) the Quad I/O instructions are sent 4 bits per SCK rising edge. The remainder of the command protocol is
identical to the Quad I/O commands.
Figure 80. Quad I/O Read Command Sequence (EBh or ECh)
Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command EBh.
2. A = MSB of address = 31 with command ECh.
Figure 81. Quad I/O Read Command Sequence (EBh or ECh), QPI Mode
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7 6 5 4 3 2 1 0 A-3 4 0 4 0 4 0 4 0 4 0 4 0
A-2 5 1 5 1 5 1 5 1 5 1 5 1
A-1 6 2 6 0 6 2 6 2 6 2 6 2
A 7 3 7 1 7 3 7 3 7 3 7 3
Instruction Address Mode Dummy D1 D2 D3 D4
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 A-3 4 0 4 4 0 4 0 4 0 4 0
5 1 A-2 5 1 5 5 1 5 1 5 1 5 1
6 2 A-1 6 2 6 0 6 2 6 2 6 2 6 2
7 3 A 7 3 7 1 7 3 7 3 7 3 7 3
Instruct. Address Mode Dummy D1 D2 D3 D4
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Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command EBh.
2. A = MSB of address = 31 with command ECh.
Figure 82. Continuous Quad I/O Read Command Sequence (EBh or ECh)
Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command EBh.
2. A = MSB of address = 31 with command ECh.
9.4.5 DDR Quad I/O Read (EDh, EEh)
The DDR Quad I/O Read command improves throughput with four I/O signals - IO0–IO3. It is similar to the Quad I/O Read command
but allows input of the address four bits on every edge of the clock. In some applications, the reduced instruction overhead might
allow for code execution (XIP) directly from S25FS-S family devices. The Quad bit of the Configuration Register must be set
(CR1V[1] = 1) to enable the Quad capability.
The instruction
EDh (CR2V[7] = 0) is followed by a 3-byte address (A23–A0) or
EDh (CR2V[7] = 1) is followed by a 4-byte address (A31–A0) or
EEh is followed by a 4-byte address (A31–A0)
The address is followed by mode bits. Then the memory contents, at the address given, is shifted out, in a DDR fashion, with four
bits at a time on each clock edge through IO0–IO3.
The maximum operating clock frequency for DDR Quad I/O Read command is 80 MHz.
For DDR Quad I/O Read, there is a latency required after the last address and mode bits are shifted into the IO0-IO3 signals before
data begins shifting out of IO0–IO3. This latency period (dummy cycles) allows the device’s internal circuitry enough time to access
the initial address. During these latency cycles, the data value on IO0-IO3 are “don’t care” and may be high impedance. When the
Data Learning Pattern (DLP) is enabled the host system must not drive the IO signals during the dummy cycles. The IO signals must
be left high impedance by the host so that the memory device can drive the DLP during the dummy cycles.
The number of dummy cycles is determined by the frequency of SCK. The latency is configured in CR2V[3:0].
Mode bits allow a series of Quad I/O DDR commands to eliminate the 8-bit instruction after the first command sends a
complementary mode bit pattern, as shown in Figure 83, DDR Quad I/O Read Initial Access (EDh or EEh) on page 103. This
feature removes the need for the 8-bit SDR instruction sequence and dramatically reduces initial access times (improves XIP
performance). The Mode bits control the length of the next DDR Quad I/O Read operation through the inclusion or exclusion of the
first byte instruction code. If the upper nibble (IO[7:4]) and lower nibble (IO[3:0]) of the Mode bits are complementary (i.e. 5h and Ah)
the device transitions to Continuous DDR Quad I/O Read mode and the next address can be entered (after CS# is raised high and
then asserted low) without requiring the EDh or EEh instruction, as shown in Figure 84, Continuous DDR Quad I/O Read
Subsequent Access (EDh or EEh) on page 104, thus eliminating eight cycles from the command sequence. The following
sequences will release the device from Continuous DDR Quad I/O Read mode; after which, the device can accept standard SPI
commands:
1. During the DDR Quad I/O Read Command Sequence, if the Mode bits are not complementary the next time CS# is raised
high and then asserted low the device will be released from DDR Quad I/O Read mode.
2. Send the Mode Reset command.
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 4 0 A-3 4 0 4 0 4 0 4 0 4 0 4 0
5 1 5 1 A-2 5 1 5 1 5 1 5 1 5 1 5 1
6 2 6 2 A-1 6 2 6 2 6 2 6 2 6 2 6 2
7 3 7 3 A 7 3 7 3 7 3 7 3 7 3 7 3
DN-1 DN Address Mode Dummy D1 D2 D3 D4
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The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
CS# should not be driven high during mode or dummy bits as this may make the mode bits indeterminate. Note that the memory
devices may drive the IOs with a preamble prior to the first data value. The preamble is a Data Learning Pattern (DLP) that is used
by the host controller to optimize data capture at higher frequencies. The preamble drives the IO bus for the four clock cycles
immediately before data is output. The host must be sure to stop driving the IO bus prior to the time that the memory starts
outputting the preamble.
The preamble is intended to give the host controller an indication about the round trip time from when the host drives a clock edge to
when the corresponding data value returns from the memory device. The host controller will skew the data capture point during the
preamble period to optimize timing margins and then use the same skew time to capture the data during the rest of the read
operation. The optimized capture point will be determined during the preamble period of every read operation. This optimization
strategy is intended to compensate for both the PVT (process, voltage, temperature) of both the memory device and the host
controller as well as any system level delays caused by flight time on the PCB.
Although the data learning pattern (DLP) is programmable, the following example shows example of the DLP of 34h. The DLP 34h
(or 00110100) will be driven on each of the active outputs (i.e. all four SIOs). This pattern was chosen to cover both “DC” and “AC”
data transition scenarios. The two DC transition scenarios include data low for a long period of time (two half clocks) followed by a
high going transition (001) and the complementary low going transition (110). The two AC transition scenarios include data low for a
short period of time (one half clock) followed by a high going transition (101) and the complementary low going transition (010). The
DC transitions will typically occur with a starting point closer to the supply rail than the AC transitions that may not have fully settled
to their steady state (DC) levels. In many cases the DC transitions will bound the beginning of the data valid period and the AC
transitions will bound the ending of the data valid period. These transitions will allow the host controller to identify the beginning and
ending of the valid data eye. Once the data eye has been characterized the optimal data capture point can be chosen. See SPI DDR
Data Learning Registers on page 69 for more details.
In QPI Mode (CR2V[6] = 1) the DDR Quad I/O instructions are sent 4 bits per SCK rising edge. The remainder of the command
protocol is identical to the DDR Quad I/O commands.
Figure 83. DDR Quad I/O Read Initial Access (EDh or EEh)
Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command EDh.
2. A = MSB of address = 31 with command EEh.
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7 6 5 4 3 2 1 0 12 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0
13 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1
A-1 14 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2
A 15 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3
Instruction Address Mode Dummy DLP D1 D2
A-2
A-2
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Figure 84. Continuous DDR Quad I/O Read Subsequent Access (EDh or EEh)
Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command EDh.
2. A = MSB of address = 31 with command EEh.
Figure 85. DDR Quad I/O Read Initial Access (EDh or EEh), QPI Mode
Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command EDh.
2. A = MSB of address = 31 with command EEh.
9.5 Program Flash Array Commands
9.5.1 Program Granularity
9.5.1.1 Automatic ECC
Each 16 byte aligned and 16 byte length Programming Block has an automatic Error Correction Code (ECC) value. The data block
plus ECC form an ECC unit. In combination with Error Detection and Correction (EDC) logic the ECC is used to detect and correct
any single bit error found during a read access. When data is first programmed within an ECC unit the ECC value is set for the entire
ECC unit. If the same ECC unit is programmed more than once the ECC value is changed to disable the EDC function. A sector
erase is needed to again enable Automatic ECC on that Programming Block. The 16 byte Program Block is the smallest program
granularity on which Automatic ECC is enabled.
These are automatic operations transparent to the user. The transparency of the Automatic ECC feature enhances data accuracy
for typical programming operations which write data once to each ECC unit but, facilitates software compatibility to previous
generations of FL family of products by still allowing for single byte programming and bit walking in which the same ECC unit is
programmed more than once. When an ECC unit has Automatic ECC disabled, EDC is not done on data read from the ECC unit
location.
An ECC status register is provided for determining if ECC is enabled on an ECC unit and whether any errors have been detected
and corrected in the ECC unit data or the ECC. The ECC Status Register Read (ECCRD) command is used to read the ECC status
on any ECC unit.
CS#
SCK
IO0
IO1
IO2
IO3
Phase
A-3 12 8 4 0 4 0 4 0 4 0 4 0 4 0 4 0
A-2 13 9 5 1 5 1 5 1 5 1 5 1 5 1 5 1
A-1 14 10 6 2 6 2 6 2 6 2 6 2 6 2 6 2
A15 11 7 3 7 3 7 3 7 3 7 3 7 3 7 3
Address Mode Dummy D1 D2 D3 D4 D5
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 A-3 12 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0
5 1 A-2 13 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1
6 2 A-1 14 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2
7 3 A 15 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3
Instruct. Address Mode Dummy DLP D1 D2
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Error Detection and Correction (EDC) is applied to all parts of the Flash address spaces other than registers. An Error Correction
Code (ECC) is calculated for each group of bytes protected and the ECC is stored in a hidden area related to the group of bytes. The
group of protected bytes and the related ECC are together called an ECC unit.
ECC is calculated for each 16 byte aligned and length ECC unit
Single Bit EDC is supported with 8 ECC bits per ECC unit, plus 1 bit for an ECC disable Flag
Sector erase resets all ECC disable flags in a sector to the default state (enabled)
ECC is programmed as part of the standard Program commands operation
ECC is disabled automatically if multiple programming operations are done on the same ECC unit.
Single byte programming or bit walking is allowed but disables ECC on the second program to the same 16 byte ECC unit.
The ECC disable flag is programmed when ECC is disabled
To re-enable ECC for an ECC unit that has been disabled, the Sector that includes the ECC unit must be erased
To ensure the best data integrity provided by EDC, each ECC unit should be programmed only once so that ECC is stored for that
unit and not disabled.
The calculation, programming, and disabling of ECC is done automatically as part of programming operations. The detection and
correction if needed is done automatically as part of read operations. The host system sees only corrected data from a read
operation.
ECC protects the OTP region — however a second program operation on the same ECC unit will disable ECC permanently on
that ECC unit (OTP is one time programmable, hence an erase operation to re-enable the ECC enable/indicator bit is prohibited)
9.5.1.2 Page Programming
Page Programming is done by loading a Page Buffer with data to be programmed and issuing a programming command to move
data from the buffer to the memory array. This sets an upper limit on the amount of data that can be programmed with a single
programming command. Page Programming allows up to a page size (either 256 or 512 bytes) to be programmed in one operation.
The page size is determined by the Configuration Register bit CR3V[4]. The page is aligned on the page size address boundary. It is
possible to program from one bit up to a page size in each Page programming operation. It is recommended that a multiple of
16-byte length and aligned Program Blocks be written. This insures that Automatic ECC is not disabled. For the very best
performance, programming should be done in full pages of 512 bytes aligned on 512-byte boundaries with each Page being
programmed only once.
9.5.1.3 Single Byte Programming
Single Byte Programming allows full backward compatibility to the legacy standard SPI Page Programming (PP) command by
allowing a single byte to be programmed anywhere in the memory array. While single byte programming is supported, this will
disable Automatic ECC on the 16 byte ECC unit where the byte is located.
9.5.2 Page Program (PP 02h or 4PP 12h)
The Page Program (PP) command allows bytes to be programmed in the memory (changing bits from 1 to 0). Before the Page
Program (PP) commands can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the
device. After the Write Enable (WREN) command has been decoded successfully, the device sets the Write Enable Latch (WEL) in
the Status Register to enable any write operations.
The instruction
02h (CR2V[7] = 0) is followed by a 3-byte address (A23–A0) or
02h (CR2V[7] = 1) is followed by a 4-byte address (A31–A0) or
12h is followed by a 4-byte address (A31–A0)
and at least one data byte on SI. Depending on CR3V[4], the page size can either be 256 or 512 bytes. Up to a page can be
provided on SI after the 3-byte address with instruction 02h or 4-byte address with instruction 12h has been provided.
If more data is sent to the device than the space between the starting address and the page aligned end boundary, the data loading
sequence will wrap from the last byte in the page to the zero byte location of the same page and begin overwriting any data
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previously loaded in the page. The last page worth of data is programmed in the page. This is a result of the device being equipped
with a page program buffer that is only page size in length. If less than a page of data is sent to the device, these data bytes will be
programmed in sequence, starting at the provided address within the page, without having any affect on the other bytes of the same
page.
Using the Page Program (PP) command to load an entire page, within the page boundary, will save overall programming time
versus loading less than a page into the program buffer.
The programming process is managed by the flash memory device internal control logic. After a programming command is issued,
the programming operation status can be checked using the Read Status Register 1 command. The WIP bit (SR1V[0]) will indicate
when the programming operation is completed. The P_ERR bit (SR1V[6]) will indicate if an error occurs in the programming
operation that prevents successful completion of programming. This includes attempted programming of a protected area.
Figure 86. Page Program (PP 02h or 4PP 12h) Command Sequence
Note:
1. A = MSB of address = A 23 for PP 02h, or A31 for 4PP 12h.
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3, two clock cycles per byte.
Figure 87. Page Program (PP 02h or 4PP 12h) QPI Mode Command Sequence
Note:
1. A = MSB of address = A 23 for PP 02h, or A31 for 4PP 12h.
9.6 Erase Flash Array Commands
9.6.1 Parameter 4-kB Sector Erase (P4E 20h or 4P4E 21h)
The main flash array address map may be configured to overlay 4-kB parameter sectors over the lowest address portion of the
lowest address uniform sector (bottom parameter sectors) or over the highest address portion of the highest address uniform sector
(top parameter sectors). The main flash array address map may also be configured to have only uniform size sectors. The
parameter sector configuration is controlled by the configuration bit CR3V[3]. The P4E and 4P4E commands are ignored when the
device is configured for uniform sectors only (CR3V[3] = 1).
The parameter 4-kB Sector Erase commands set all the bits of a 4-kB parameter sector to 1 (all bytes are FFh). Before the P4E or
4P4E command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device,
which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The instruction
20h [CR2V[7] = 0] is followed by a 3-byte address (A23–A0), or
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Input Data 1Input Data 2
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 A-3 4 0 4 0 4 0 4 0 4 0
5 1 A-2 5 1 5 1 5 1 5 1 5 1
6 2 A-1 6 2 6 2 6 2 6 2 6 2
7 3 A 7 3 7 3 7 3 7 3 7 3
Instruct. Address Input D1 Input D2 Input D3 Input D4
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20h [CR2V[7] = 1] is followed by a 4-byte address (A31–A0), or
21h is followed by a 4-byte address (A31–A0)
CS# must be driven into the logic high state after the twenty-fourth or thirty-second bit of the address has been latched in on SI. This
will initiate the beginning of internal erase cycle, which involves the pre-programming and erase of the chosen sector of the flash
memory array. If CS# is not driven high after the last bit of address, the Sector Erase operation will not be executed.
As soon as CS# is driven high, the internal erase cycle will be initiated. With the internal erase cycle in progress, the user can read
the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a 1.
when the erase cycle is in progress and a 0 when the erase cycle has been completed.
A P4E or 4P4E command applied to a sector that has been write protected through the Block Protection bits or ASP, will not be
executed and will set the E_ERR status. A P4E command applied to a sector that is larger than 4 kbytes will not be executed and will
not set the E_ERR status.
Figure 88. Parameter Sector Erase (P4E 20h or 4P4E 21h) Command Sequence
Note:
1. A = MSB of address = A 23 for P4E 20h with CR2V[7] = 0, or A31 for P4E 20h with CR2V[7] = 1 or 4P4E 21h.
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3, two clock cycles per byte.
Figure 89. Parameter Sector Erase (P4E 20h or 4P4E 21h) QPI Mode Command Sequence
Note:
1. A = MSB of address = A 23 for P4E 20h with CR2V[7] = 0, or A31 for P4E 20h with CR2V[7] = 1 or 4P4E 21h.
9.6.2 Sector Erase (SE D8h or 4SE DCh)
The Sector Erase (SE) command sets all bits in the addressed sector to 1 (all bytes are FFh). Before the Sector Erase (SE)
command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets
the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The instruction
D8h [CR2V[7] = 0] is followed by a 3-byte address (A23–A0), or
D8h [CR2V[7] = 1] is followed by a 4-byte address (A31–A0), or
DCh is followed by a 4-byte address (A31–A0)
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 1 0
Instruction Address
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 A-3 4 0
5 1 A-2 5 1
6 2 A-1 6 2
7 3 A 7 3
Instructtion Address
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CS# must be driven into the logic high state after the twenty-fourth or thirty-second bit of address has been latched in on SI. This will
initiate the erase cycle, which involves the pre-programming and erase of the chosen sector. If CS# is not driven high after the last
bit of address, the Sector Erase operation will not be executed.
As soon as CS# is driven into the logic high state, the internal erase cycle will be initiated. With the internal erase cycle in progress,
the user can read the value of the Write-In Progress (WIP) bit to check if the operation has been completed. The WIP bit will indicate
a 1 when the erase cycle is in progress and a 0 when the erase cycle has been completed.
A Sector Erase (SE) command applied to a sector that has been Write Protected through the Block Protection bits or ASP, will not
be executed and will set the E_ERR status.
A device configuration option (CR3V[1]) determines whether the SE command erases 64 kbytes or 256 kbytes. The option to use
this command to always erase 256 kbytes provides for software compatibility with higher density and future S25FS family devices.
A device configuration option (CR3V[3]) determines whether 4-kB parameter sectors are in use. When CR3V[3] = 0, 4-kB parameter
sectors overlay a portion of the highest or lowest address 32 kB of the device address space. If a Sector Erase command is applied
to a 64-kB sector that is overlaid by 4-kB sectors, the overlaid 4-kB sectors are not affected by the erase. Only the visible
(non-overlaid) portion of the 64-kB sector appears erased. Similarly if a Sector Erase command is applied to a 256-kB range that is
overlaid by 4-kB sectors, the overlaid 4-kB sectors are not affected by the erase. When CR3V[3] = 1, there are no 4-kB parameter
sectors in the device address space and the Sector Erase command always operates on fully visible 64-kB or 256-kB sectors.
ASP has a PPB and a DYB protection bit for each physical sector, including any 4-kB sectors. If a Sector Erase command is applied
to a 256-kB range that includes a 64-kB protected physical sector, the erase will not be executed on the 256-kB range and will set
the E_ERR status.
Figure 90. Sector Erase (SE D8h or 4SE DCh) Command Sequence
Note:
1. A = MSB of address = A23 for SE D8h with CR2V[7] = 0, or A31 for SE D8h with CR2V[7] = 1 or 4P4E DCh.
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0-IO3, two clock cycles per byte.
Figure 91. Sector Erase (SE D8h or 4SE DCh) QPI Mode Command Sequence
Note:
1. A = MSB of address = A 23 for P4E 20h with CR2V[7] = 0, or A31 for P4E 20h with CR2V[7] = 1 or 4P4E 21h.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 1 0
Instruction Address
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 A-3 4 0
5 1 A-2 5 1
6 2 A-1 6 2
7 3 A 7 3
Instructtion Address
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9.6.3 Bulk Erase (BE 60h or C7h)
The Bulk Erase (BE) command sets all bits to 1 (all bytes are FFh) inside the entire flash memory array. Before the BE command
can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write
Enable Latch (WEL) in the Status Register to enable any write operations.
CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI. This will initiate the
erase cycle, which involves the pre-programming and erase of the entire flash memory array. If CS# is not driven high after the last
bit of instruction, the BE operation will not be executed.
As soon as CS# is driven into the logic high state, the erase cycle will be initiated. With the erase cycle in progress, the user can
read the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a 1
when the erase cycle is in progress and a 0 when the erase cycle has been completed.
A BE command can be executed only when the Block Protection (BP2, BP1, BP0) bits are set to 0s. If the BP bits are not 0, the BE
command is not executed and E_ERR is not set. The BE command will skip any sectors protected by the DYB or PPB and the
E_ERR status will not be set.
Figure 92. Bulk Erase Command Sequence
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3, two clock cycles per byte.
Figure 93. Bulk Erase Command Sequence QPI Mode
9.6.4 Evaluate Erase Status (EES D0h)
The Evaluate Erase Status (EES) command verifies that the last erase operation on the addressed sector was completed
successfully. If the selected sector was successfully erased the Erase Status bit (SR2V[2]) is set to 1. If the selected sector was not
completely erased SR2V[2] is 0.
The EES command can be used to detect erase operations failed due to loss of power, reset, or failure during the erase operation.
The EES instruction is followed by a 3- or 4-byte address, depending on the address length configuration (CR2V[7]). The EES
command requires tEES to complete and update the Erase Status in SR2V. The WIP bit (SR1V[0]) may be read using the RDSR1
(05h) command, to determine when the EES command is finished. Then the RDSR2 (07h) or the RDAR (65h) command can be
used to read SR2V[2]. If a sector is found not erased with SR2V[2] = 0, the sector must be erased again to ensure reliable storage of
data in the sector.
The Write Enable command (to set the WEL bit) is not required before the EES command. However, the WEL bit is set by the device
itself and cleared at the end of the operation, as visible in SR1V[1] when reading status.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0
5 1
6 2
7 3
Instruction
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Figure 94. EES Command Sequence
Note:
1. A = MSB of address = A 23 for CR2V[7] = 0, or A31 for CR2V[7] = 1.
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3, two clock cycles per byte.
Figure 95. EES QPI Mode Command Sequence
Note:
1. A = MSB of address = A 23 for CR2V[7] = 0, or A31 for CR2V[7] = 1.
9.6.5 Program or Erase Suspend (PES 85h, 75h, B0h)
There are three instruction codes for Program or Erase Suspend (PES) to enable legacy and alternate source software compatibility.
The PES command allows the system to interrupt a programming or erase operation and then read from any other
non-erase-suspended sector or non-program-suspended-page. Program or Erase Suspend is valid only during a programming or
Sector Erase operation. A Bulk Erase operation cannot be suspended.
The Write-In-Progress (WIP) bit in Status Register 1 (SR1V[0]) must be checked to know when the programming or erase operation
has stopped. The Program Suspend Status bit in the Status Register 2 (SR2[0]) can be used to determine if a programming
operation has been suspended or was completed at the time WIP changes to 0. The Erase Suspend Status bit in the Status Register
2 (SR2[1]) can be used to determine if an erase operation has been suspended or was completed at the time WIP changes to 0. The
time required for the suspend operation to complete is tSL, see Program and Erase Performance on page 124.
An Erase can be suspended to allow a program operation or a read operation. During an erase suspend, the DYB array may be read
to examine sector protection and written to remove or restore protection on a sector to be programmed.
A program operation may be suspended to allow a read operation.
A new erase operation is not allowed with an already suspended erase or program operation. An erase command is ignored in this
situation.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 1 0
Instruction Address
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 A-3 4 0
5 1 A-2 5 1
6 2 A-1 6 2
7 3 A 7 3
Instructtion Address
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Table 61. Commands Allowed During Program or Erase Suspend
Instruction
Name
Instruction
Code
(Hex)
Allowed
During
Erase
Suspend
Allowed
During
Program
Suspend
Comment
PP 02 X
Required for array program during erase suspend. Only allowed if there is no other
program suspended program operation (SR2V[0]=0). A program command will be
ignored while there is a suspended program. If a program command is sent for a
location within an erase suspended sector the program operation will fail with the
P_ERR bit set.
READ 03 X X All array reads allowed in suspend.
RDSR1 05 X X Needed to read WIP to determine end of suspend process.
RDAR 65 X X Alternate way to read WIP to determine end of suspend process.
WREN 06 X Required for program command within erase suspend.
RDSR2 07 X X Needed to read suspend status to determine whether the operation is suspended or
complete.
4PP 12 X
Required for array program during erase suspend. Only allowed if there is no other
program suspended program operation (SR2V[0] = 0). A program command will be
ignored while there is a suspended program. If a program command is sent for a
location within an erase suspended sector the program operation will fail with the
P_ERR bit set.
4READ 13 X X All array reads allowed in suspend.
CLSR 30 X Clear status may be used if a program operation fails during erase suspend. Note
the instruction is only valid if enabled for clear status by CR4NV[2] = 1.
CLSR 82 X Clear status may be used if a program operation fails during erase suspend.
EPR 30 X X Required to resume from erase or program suspend. Note the command must be
enabled for use as a resume command by CR4NV[2] = 0.
EPR 7A X X Required to resume from erase or program suspend.
EPR 8A X X Required to resume from erase or program suspend.
RSTEN 66 X X Reset allowed anytime.
RST 99 X X Reset allowed anytime.
FAST_READ 0B X X All array reads allowed in suspend.
4FAST_READ 0C X X All array reads allowed in suspend.
EPR 7A X Required to resume from erase suspend.
EPR 8A X Required to resume from erase suspend.
DIOR BB X X All array reads allowed in suspend.
4DIOR BC X X All array reads allowed in suspend.
DYBRD FA X It may be necessary to remove and restore dynamic protection during erase
suspend to allow programming during erase suspend.
DYBWR FB X It may be necessary to remove and restore dynamic protection during erase
suspend to allow programming during erase suspend.
PPBRD FC X Allowed for checking Persistent Protection before attempting a program command
during erase suspend.
4DYBRD E0 X It may be necessary to remove and restore dynamic protection during erase
suspend to allow programming during erase suspend.
4DYBWR E1 X It may be necessary to remove and restore dynamic protection during erase
suspend to allow programming during erase suspend.
4PPBRD E2 X Allowed for checking Persistent Protection before attempting a program command
during erase suspend.
QIOR EB X X All array reads allowed in suspend.
4QIOR EC X X All array reads allowed in suspend.
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Reading at any address within an erase-suspended sector or program-suspended page produces undetermined data.
The WRR, WRAR, or PPB Erase commands are not allowed during Erase or Program Suspend, it is therefore not possible to alter
the Block Protection or PPB bits during Erase Suspend. If there are sectors that may need programming during Erase suspend,
these sectors should be protected only by DYB bits that can be turned off during Erase Suspend.
After an erase-suspended program operation is complete, the device returns to the erase-suspend mode. The system can
determine the status of the program operation by reading the WIP bit in the Status Register, just as in the standard program
operation.
Figure 96. Program or Erase Suspend Command Sequence
Figure 97. Program or Erase Suspend Command Sequence
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3, two clock cycles per byte.
Figure 98. Program or Erase Suspend Command Sequence QPI Mode
DDRQIOR ED X X All array reads allowed in suspend.
4DDRQIOR EE X X All array reads allowed in suspend.
RESET F0 X X Reset allowed anytime.
MBR FF X X May need to reset a read operation during suspend.
Table 61. Commands Allowed During Program or Erase Suspend (Continued)
Instruction
Name
Instruction
Code
(Hex)
Allowed
During
Erase
Suspend
Allowed
During
Program
Suspend
Comment
CS#
SCK
SI
SO
Phase
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0
Suspend Instruction Read Status Instruction Status Instr. During Suspend
Repeat Status Read Until Suspended
tSL
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0
5 1
6 2
7 3
Instruction
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9.6.6 Erase or Program Resume (EPR 7Ah, 8Ah, 30h)
There are three instruction codes for Erase or Program Resume (EPR) to enable legacy and alternate source software compatibility.
After program or read operations are completed during a program or erase suspend the Erase or Program Resume command is
sent to continue the suspended operation.
After an Erase or Program Resume command is issued, the WIP bit in the Status Register 1 will be set to a 1 and the programming
operation will resume if one is suspended. If no program operation is suspended the suspended erase operation will resume. If there
is no suspended program or erase operation the resume command is ignored.
Program or erase operations may be interrupted as often as necessary e.g. a program suspend command could immediately follow
a program resume command but, in order for a program or erase operation to progress to completion there must be some periods of
time between resume and the next suspend command greater than or equal to tRS. See Program or Erase Suspend AC Parameters
on page 124.
An Erase or Program Resume command must be written to resume a suspended operation.
Figure 99. Erase or Program Resume Command Sequence
Figure 100. Erase or Program Resume Command Sequence QPI Mode
9.7 One-Time Program Array Commands
9.7.1 OTP Program (OTPP 42h)
The OTP Program command programs data in the One-Time Program region, which is in a different address space from the main
array data. The OTP region is 1024 bytes so, the address bits from A31 to A10 must be 0 for this command. Refer to OTP Address
Space on page 52 for details on the OTP region.
Before the OTP Program command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded
by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The WIP bit in SR1V
may be checked to determine when the operation is completed. The P_ERR bit in SR1V may be checked to determine if any error
occurred during the operation.
To program the OTP array in bit granularity, the rest of the bits within a data byte can be set to 1.
Each region in the OTP memory space can be programmed one or more times, provided that the region is not locked. Attempting to
program 0s in a region that is locked will fail with the P_ERR bit in SR1V set to 1. Programming ones, even in a protected area does
not cause an error and does not set P_ERR. Subsequent OTP programming can be performed only on the un-programmed bits (that
is, 1 data). Programming more than once within an ECC unit will disable ECC on that unit.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0
5 1
6 2
7 3
Instruction
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The protocol of the OTP Program command is the same as the Page Program command. See Page Program (PP 02h or 4PP 12h)
on page 105 for the command sequence.
9.7.2 OTP Read (OTPR 4Bh)
The OTP Read command reads data from the OTP region. The OTP region is 1024 bytes so, the address bits from A31 to A10 must
be zero for this command. Refer to OTP Address Space on page 52 for details on the OTP region. The protocol of the OTP Read
command is similar to the Fast Read command except that it will not wrap to the starting address after the OTP address is at its
maximum; instead, the data beyond the maximum OTP address will be undefined. The OTP Read command read latency is set by
the latency value in CR2V[3:0].
See Fast Read (FAST_READ 0Bh or 4FAST_READ 0Ch) on page 98 for the command sequence.
9.8 Advanced Sector Protection Commands
9.8.1 ASP Read (ASPRD 2Bh)
The ASP Read instruction 2Bh is shifted into SI by the rising edge of the SCK signal. Then the 16-bit ASP register contents are
shifted out on the serial output SO, least significant byte first. Each bit is shifted out at the SCK frequency by the falling edge of the
SCK signal. It is possible to read the ASP register continuously by providing multiples of 16 clock cycles. The maximum operating
clock frequency for the ASP Read (ASPRD) command is 133 MHz.
Figure 101. ASPRD Command
9.8.2 ASP Program (ASPP 2Fh)
Before the ASP Program (ASPP) command can be accepted by the device, a Write Enable (WREN) command must be issued. After
the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to
enable any write operations.
The ASPP command is entered by driving CS# to the logic low state, followed by the instruction and two data bytes on SI, least
significant byte first. The ASP Register is two data bytes in length.
The ASPP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other
programming operation.
CS# input must be driven to the logic high state after the sixteenth bit of data has been latched in. If not, the ASPP command is not
executed. As soon as CS# is driven to the logic high state, the self-timed ASPP operation is initiated. While the ASPP operation is in
progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a
1 during the self-timed ASPP operation, and is a 0 when it is completed. When the ASPP operation is completed, the Write Enable
Latch (WEL) is set to a 0.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Output ASPR Low Byte Output ASPR High Byte
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Figure 102. ASPP Command
9.8.3 DYB Read (DYBRD FAh or 4DYBRD E0h)
The instruction is latched into SI by the rising edge of the SCK signal. The instruction is followed by the 24 or 32-bit address,
depending on the address length configuration CR2V[7], selecting location zero within the desired sector. Note, the high order
address bits not used by a particular density device must be zero. Then the 8-bit DYB access register contents are shifted out on the
serial output SO. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the same
DYB access register continuously by providing multiples of eight clock cycles. The address of the DYB register does not increment
so this is not a means to read the entire DYB array. Each location must be read with a separate DYB Read command. The maximum
operating clock frequency for READ command is 133 MHz.
Figure 103. DYBRD Command Sequence
Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7] = 1 with command FAh.
2. A = MSB of address = 31 with command E0h.
This command is also supported in QPI Mode. In QPI Mode the instruction and address is shifted in on IO0–IO3 and returning data
is shifted out on IO0–IO3.
Figure 104. DYBRD QPI Mode Command Sequence
Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7] = 1 with command FAh.
2. A = MSB of address = 31 with command E0h.
9.8.4 DYB Write (DYBWR FBh or 4DYBWR E1h)
Before the DYB Write (DYBWR) command can be accepted by the device, a Write Enable (WREN) command must be issued. After
the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to
enable any write operations.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input ASPR Low Byte Input ASPR High Byte
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Register Repeat Register
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 A-3 4 0 4 0
5 1 A-2 5 1 5 1
6 2 A-1 6 2 6 2
7 3 A 7 3 7 3
Instruction Address Output DYBAR
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The DYBWR command is entered by driving CS# to the logic low state, followed by the instruction, followed by the 24- or 32-bit
address, depending on the address length configuration CR2V[7], selecting location zero within the desired sector (note, the high
order address bits not used by a particular density device must be zero), then the data byte on SI. The DYB Access Register is one
data byte in length. The data value must be 00h to protect or FFh to unprotect the selected sector.
The DYBWR command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other
programming operation. CS# must be driven to the logic high state after the eighth bit of data has been latched in. As soon as CS#
is driven to the logic high state, the self-timed DYBWR operation is initiated. While the DYBWR operation is in progress, the Status
Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a 1 during the
self-timed DYBWR operation, and is a 0 when it is completed. When the DYBWR operation is completed, the Write Enable Latch
(WEL) is set to a 0.
Figure 105. DYBWR Command Sequence
Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7] = 1 with command FBh.
2. A = MSB of address = 31 with command E1h.
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3, two clock cycles per byte.
Figure 106. DYBWR QPI Mode Command Sequence
Notes:
1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7] = 1 with command FBh.
2. A = MSB of address = 31 with command E1h
9.8.5 PPB Read (PPBRD FCh or 4PPBRD E2h)
The instruction E2h is shifted into SI by the rising edges of the SCK signal, followed by the 24- or 32-bit address, depending on the
address length configuration CR2V[7], selecting location zero within the desired sector (note, the high order address bits not used by
a particular density device must be zero). Then the 8-bit PPB access register contents are shifted out on SO.
It is possible to read the same PPB access register continuously by providing multiples of eight clock cycles. The address of the PPB
register does not increment so this is not a means to read the entire PPB array. Each location must be read with a separate PPB
Read command. The maximum operating clock frequency for the PPB Read command is 133 MHz.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Input Data
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0 A-3 4 0 4 0
5 1 A-2 5 1 5 1
6 2 A-1 6 2 6 2
7 3 A 7 3 7 3
Instruction Address Input DYBAR
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Figure 107. PPBRD Command Sequence
Notes:
1. A = MSB of address = 23 for A ddress length (CR2V[7] = 0, or 31 for CR2V[7] = 1 with command FCh.
2. A = MSB of address = 31 with command E2h.
9.8.6 PPB Program (PPBP FDh or 4PPBP E3h)
Before the PPB Program (PPBP) command can be accepted by the device, a Write Enable (WREN) command must be issued. After
the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to
enable any write operations.
The PPBP command is entered by driving CS# to the logic low state, followed by the instruction, followed by the 24- or 32-bit
address, depending on the address length configuration CR2V[7], selecting location zero within the desired sector (note, the high
order address bits not used by a particular density device must be zero).
The PPBP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other
programming operation.
CS# must be driven to the logic high state after the last bit of address has been latched in. If not, the PPBP command is not
executed. As soon as CS# is driven to the logic high state, the self-timed PPBP operation is initiated. While the PPBP operation is in
progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The WIP bit is a 1 during the
self-timed PPBP operation, and is a 0 when it is completed. When the PPBP operation is completed, the Write Enable Latch (WEL)
is set to a 0.
Figure 108. PPBP Command Sequence
Notes:
1. A = MSB of address = 23 for A ddress length (CR2V[7] = 0, or 31 for CR2V[7] = 1 with command FDh.
2. A = MSB of address = 31 with command E3h.
9.8.7 PPB Erase (PPBE E4h)
The PPB Erase (PPBE) command sets all PPB bits to 1. Before the PPB Erase command can be accepted by the device, a Write
Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status
Register to enable any write operations.
The instruction E4h is shifted into SI by the rising edges of the SCK signal.
CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI. This will initiate the
beginning of internal erase cycle, which involves the pre-programming and erase of the entire PPB memory array. Without CS#
being driven to the logic high state after the eighth bit of the instruction, the PPB erase operation will not be executed.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Register Repeat Register
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 A 1 0
Instruction Address
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With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to check if the operation has
been completed. The WIP bit will indicate a 1 when the erase cycle is in progress and a 0 when the erase cycle has been completed.
Erase suspend is not allowed during PPB Erase.
Figure 109. PPB Erase Command Sequence
9.8.8 PPB Lock Bit Read (PLBRD A7h)
The PPB Lock Bit Read (PLBRD) command allows the PPB Lock Register contents to be read out of SO. It is possible to read the
PPB lock register continuously by providing multiples of eight clock cycles. The PPB Lock Register contents may only be read when
the device is in standby state with no other operation in progress. It is recommended to check the Write-In Progress (WIP) bit of the
Status Register before issuing a new command to the device.
Figure 110. PPB Lock Register Read Command Sequence
9.8.9 PPB Lock Bit Write (PLBWR A6h)
The PPB Lock Bit Write (PLBWR) command clears the PPB Lock Register to zero. Before the PLBWR command can be accepted
by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch
(WEL) in the Status Register to enable any write operations.
The PLBWR command is entered by driving CS# to the logic low state, followed by the instruction.
CS# must be driven to the logic high state after the eighth bit of instruction has been latched in. If not, the PLBWR command is not
executed. As soon as CS# is driven to the logic high state, the self-timed PLBWR operation is initiated. While the PLBWR operation
is in progress, the Status Register may still be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress
(WIP) bit is a 1 during the self-timed PLBWR operation, and is a 0 when it is completed. When the PLBWR operation is completed,
the Write Enable Latch (WEL) is set to a 0. The maximum clock frequency for the PLBWR command is 133 MHz.
Figure 111. PPB Lock Bit Write Command Sequence
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Register Read Repeat Register Read
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
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9.8.10 Password Read (PASSRD E7h)
The correct password value may be read only after it is programmed and before the Password mode has been selected by
programming the Password Protection mode bit to 0 in the ASP Register (ASP[2]). After the Password Protection mode is selected
the password is no longer readable, the PASSRD command will output undefined data.
The PASSRD command is shifted into SI. Then the 64-bit Password is shifted out on the serial output SO, least significant byte first,
most significant bit of each byte first. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible
to read the Password continuously by providing multiples of 64 clock cycles. The maximum operating clock frequency for the
PASSRD command is 133 MHz.
Figure 112. Password Read Command Sequence
9.8.11 Password Program (PASSP E8h)
Before the Password Program (PASSP) command can be accepted by the device, a Write Enable (WREN) command must be
issued and decoded by the device. After the Write Enable (WREN) command has been decoded, the device sets the Write Enable
Latch (WEL) to enable the PASSP operation.
The password can only be programmed before the Password mode is selected by programming the Password Protection mode bit
to 0 in the ASP Register (ASP[2]). After the Password Protection mode is selected the PASSP command is ignored.
The PASSP command is entered by driving CS# to the logic low state, followed by the instruction and the password data bytes on
SI, least significant byte first, most significant bit of each byte first. The password is sixty-four (64) bits in length.
CS# must be driven to the logic high state after the sixty-fourth (64th) bit of data has been latched. If not, the PASSP command is not
executed. As soon as CS# is driven to the logic high state, the self-timed PASSP operation is initiated. While the PASSP operation
is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit
is a 1 during the self-timed PASSP cycle, and is a 0 when it is completed. The PASSP command can report a program error in the
P_ERR bit of the Status Register. When the PASSP operation is completed, the Write Enable Latch (WEL) is set to a 0. The
maximum clock frequency for the PASSP command is 133 MHz.
Figure 113. Password Program Command Sequence
9.8.12 Password Unlock (PASSU E9h)
The PASSU command is entered by driving CS# to the logic low state, followed by the instruction and the password data bytes on
SI, least significant byte first, most significant bit of each byte first. The password is sixty-four (64) bits in length.
CS# must be driven to the logic high state after the sixty-fourth (64th) bit of data has been latched. If not, the PASSU command is not
executed. As soon as CS# is driven to the logic high state, the self-timed PASSU operation is initiated. While the PASSU operation
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Data 1 Data N
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Password Low Byte Input Password High Byte
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is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit
is a 1 during the self-timed PASSU cycle, and is a 0 when it is completed.
If the PASSU command supplied password does not match the hidden password in the Password Register, an error is reported by
setting the P_ERR bit to 1. The WIP bit of the Status Register also remains set to 1. It is necessary to use the CLSR command to
clear the Status Register, the RESET command to software reset the device, or drive the RESET# input low to initiate a hardware
reset, in order to return the P_ERR and WIP bits to 0. This returns the device to standby state, ready for new commands such as a
retry of the PASSU command.
If the password does match, the PPB Lock bit is set to 1. The maximum clock frequency for the PASSU command is 133 MHz.
Figure 114. Password Unlock Command Sequence
9.9 Reset Commands
Software controlled Reset commands restore the device to its initial power-up state, by reloading volatile registers from non-volatile
default values. However, the volatile FREEZE bit in the Configuration Register CR1V[0] and the volatile PPB Lock bit in the PPB
Lock Register are not changed by a software reset. The software reset cannot be used to circumvent the FREEZE or PPB Lock bit
protection mechanisms for the other security configuration bits.
The Freeze bit and the PPB Lock bit will remain set at their last value prior to the software reset. To clear the FREEZE bit and set the
PPB Lock bit to its protection mode selected power-on state, a full power-on-reset sequence or hardware reset must be done.
The non-volatile bits in the Configuration Register (CR1NV), TBPROT_O, TBPARM, and BPNV_O, retain their previous state after a
software reset.
The Block Protection bits BP2, BP1, and BP0, in the Status Register (SR1V) will only be reset to their default value if FREEZE = 0.
A reset command (RST or RESET) is executed when CS# is brought high at the end of the instruction and requires tRPH time to
execute.
In the case of a previous Power-Up Reset (POR) failure to complete, a reset command triggers a full power-up sequence requiring
tPU to complete.
Figure 115. Software Reset Command Sequence
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3, two clock cycles per byte.
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Password Low Byte Input Password High Byte
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
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Figure 116. Software Reset Command Sequence QPI Mode
9.9.1 Software Reset Enable (RSTEN 66h)
The Reset Enable (RSTEN) command is required immediately before a Reset command (RST) such that a software reset is a
sequence of the two commands. Any command other than RST following the RSTEN command, will clear the reset enable condition
and prevent a later RST command from being recognized.
9.9.2 Software Reset (RST 99h)
The Reset (RST) command immediately following a RSTEN command, initiates the software reset process.
9.9.3 Legacy Software Reset (RESET F0h)
The Legacy Software Reset (RESET) is a single command that initiates the software reset process. This command is disabled by
default but can be enabled by programming CR3V[0] = 1, for software compatibility with Cypress legacy FL-S devices.
9.9.4 Mode Bit Reset (MBR FFh)
The Mode Bit Reset (MBR) command is used to return the device from continuous high performance read mode back to normal
standby awaiting any new command. Because some device packages lack a hardware RESET# input and a device that is in a
continuous high performance read mode may not recognize any normal SPI command, a system hardware reset or software reset
command may not be recognized by the device. It is recommended to use the MBR command after a system reset when the
RESET# signal is not available or, before sending a software reset, to ensure the device is released from continuous high
performance read mode.
The MBR command sends 1s on SI or IO0 for 8 SCK cycles. IO1 to IO3 are “don’t care” during these cycles.
Figure 117. Mode Bit Reset Command Sequence
This command is also supported in QPI Mode. In QPI Mode the instruction is shifted in on IO0–IO3, two clock cycles per byte.
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0
5 1
6 2
7 3
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
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Figure 118. Mode Bit Reset Command Sequence QPI Mode
9.10 DPD Commands
9.10.1 Enter Deep Power-Down (DPD B9h)
Although the standby current during normal operation is relatively low, standby current can be further reduced with the Deep Power
Down command. The lower power consumption makes the Deep Power-Down (DPD) command especially useful for battery
powered applications (see IDPD in Section 4.6, DC Characteristics on page 27).
The DPD command is accepted only while the device is not performing an embedded operation as indicated by the Status
Register-1 volatile Write In Progress (WIP) bit being cleared to zero (SR1V[0] = 0).
The command is initiated by driving the CS# pin low and shifting the instruction code “B9h” as shown in Figure 119, Deep
Power-Down Command Sequence. The CS# pin must be driven high after the eighth bit has been latched. If this is not done, the
Deep Power-Down command will not be executed. After CS# is driven high, the power-down state will be entered within the time
duration of tDPD (See Section 5., Timing Specifications on page 29).
While in the power-down state, only the Release from Deep Power-Down command, which restores the device to normal operation,
will be recognized. All other commands are ignored. This includes the Read Status Register command, which is always available
during normal operation. Ignoring all but one command also makes the Power Down state useful for write protection. The device
always powers-up in the interface standby state with the standby current of ICC1.
Figure 119. Deep Power-Down Command Sequence
This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0–IO3, two clock cycles per byte.
Figure 120. DPD Command Sequence QPI Mode
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0
5 1
6 2
7 3
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0
5 1
6 2
7 3
Instruction
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9.10.2 Release from Deep Power-Down (RES ABh)
The Release from Deep Power-Down command is used to release the device from the deep power-down state. In some legacy SPI
devices, the RES command could also be used to obtain the device electronic identification (ID) number. However, the device ID
function is not supported by the RES command.
To release the device from the deep power-down state, the command is issued by driving the CS# pin low, shifting the instruction
code ‘ABh’ and driving CS# high as shown in Figure 121, Release from Deep Power-Down Command Sequence. Release from
deep power-down will take the time duration of tRES (See Section 5., Timing Specifications on page 29) before the device will
resume normal operation and other commands are accepted. The CS# pin must remain high during the tRES time duration.
Hardware Reset will also release the device from the DPD state as part of the hardware reset process.
Figure 121. Release from Deep Power-Down Command Sequence
This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0–IO3, two clock cycles per byte.
Figure 122. RES Command Sequence QPI Mode
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
IO0
IO1
IO2
IO3
Phase
4 0
5 1
6 2
7 3
Instruction
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10. Embedded Algorithm Performance Tables
The Joint Electron Device Engineering Council (JEDEC) standard JESD22-A117 defines the procedural requirements for performing
valid endurance and retention tests based on a qualification specification. This methodology is intended to determine the ability of a
flash device to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life
(data retention). Endurance and retention qualification specifications are specified in JESD47 or may be developed using
knowledge-based methods as in JESD94.
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, VCC = 1.8 V; random data pattern.
3. The programming time for any OTP programming command is the same as tPP. This includes OTPP 42h, PNVDLR 43h, ASPP 2Fh, and PASSP E8h.
4. The programming time for the PPBP E3h command is the same as tPP. The erase time for PPBE E4h command is the same as tSE.
5. Data retention of 20 years is based on 1k erase cycles or less.
Table 62. Program and Erase Performance
Symbol Parameter Min Typ (2) Max Unit
tWNon-Volatile Register Write Time 240 750 ms
tPP
Page Programming (512 bytes)
Page Programming (256 bytes) 475
360
2000
2000 µs
tSE
Sector Erase Time (64-kB or 4-kB physical sectors) 240 725 ms
Sector Erase Time (256-kB logical sectors = 4x64K physical sectors) 930 2900 ms
tBE (1) Bulk Erase Time (S25FS128S) 60 180 sec
tBE (1) Bulk Erase Time (S25FS256S) 120 360 sec
tEES
Evaluate Erase Status Time (64-kB or 4-kB physical sectors) 20 25
µs
Evaluate Erase Status Time (256-kB physical or logical sectors) 80 100
Erase per sector 100,000 cycles
Table 63. Program or Erase Suspend AC Parameters
Parameter Typical Max Unit Comments
Suspend Latency (tSL) 50 µs The time from Suspend command until the WIP bit is
0.
Resume to next Program Suspend (tRS) 100 µs
Minimum is the time needed to issue the next
Suspend command but ≥ typical periods are needed
for Program or Erase to progress to completion.
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11. Data Integrity
11.1 Erase Endurance
Note:
1. Each write command to a non-volatile register causes a P/E cycle on the entire non-volatile register array. OTP bits and registers internally reside in a separate array
that is not P/E cycled.
11.2 Data Retention
Contact Cypress Sales or an FAE representative for additional information on data integrity. An application note is available at:
http://www.cypress.com/appnotes.
11.3 Serial Flash Discoverable Parameters (SFDP) Address Map
The SFDP address space has a header starting at address zero that identifies the SFDP data structure and provides a pointer to
each parameter. One Basic Flash parameter is mandated by the JEDEC JESD216B standard. Two optional parameter tables for
Sector Map and 4-Byte Address Instructions follow the Basic Flash table. Cypress provides an additional parameter by pointing to
the ID-CFI address space i.e. the ID-CFI address space is a sub-set of the SFDP address space. The parameter tables portion of the
SFDP data structure are located within the ID-CFI address space and is thus both a CFI parameter and an SFDP parameter. In this
way both SFDP and ID-CFI information can be accessed by either the RSFDP or RDID commands.
Table 64. Erase Endurance
Parameter Minimum Unit
Program/Erase cycles per main Flash array sectors 100K P/E cycle
Program/Erase cycles per PPB array or non-volatile register array (1) 100K P/E cycle
Table 65. Data Retention
Parameter Test Conditions Minimum Time Unit
Data Retention Time 10K Program/Erase Cycles 20 Years
100K Program/Erase Cycles 2Years
Table 66. SFDP Overview Map
Byte Address Description
0000h Location zero within JEDEC JESD216B SFDP space – start of SFDP header.
,,, Remainder of SFDP header followed by undefined space.
1000h Location zero within ID-CFI space – start of ID-CFI parameter tables.
... ID-CFI parameters.
1090h Start of SFDP parameter tables which are also grouped as one of the CFI parameter tables (the CFI parameter itself starts
at 108Eh, the SFDP parameter table data is double word aligned starting at 1090h).
... Remainder of SFDP parameter tables followed by either more CFI parameters or undefined space.
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11.3.1 Field Definitions
Table 67. SFDP Header
SFDP Byte
Address
SFDP Dword
Name Data Description
00h
SFDP Header 1st
DWORD
53h This is the entry point for Read SFDP (5Ah) command i.e. location zero within SFDP
space ASCII “S”
01h 46h ASCII “F”
02h 44h ASCII “D”
03h 50h ASCII “P”
04h
SFDP Header
2nd DWORD
06h
SFDP Minor Revision (06h = JEDEC JESD216 Revision B) This revision is backward
compatible with all prior minor revisions. Minor revisions are changes that define
previously reserved fields, add fields to the end, or that clarify definitions of existing fields.
Increments of the minor revision value indicate that previously reserved parameter fields
may have been assigned a new definition or entire Dwords may have been added to the
parameter table. However, the definition of previously existing fields is unchanged and
therefore remain backward compatible with earlier SFDP parameter table revisions.
Software can safely ignore increments of the minor revision number, as long as only
those parameters the software was designed to support are used i.e. previously reserved
fields and additional Dwords must be masked or ignored. Do not do a simple compare on
the minor revision number, looking only for a match with the revision number that the
software is designed to handle. There is no problem with using a higher number minor
revision.
05h 01h SFDP Major Revision This is the original major revision. This major revision is
compatible with all SFDP reading and parsing software.
06h 05h Number of Parameter Headers (zero based, 05h = 6 parameters)
07h FFh Unused
08h
Parameter
Header 0 1st
DWORD
00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter)
09h 00h
Parameter Minor Revision (00h = JESD216) - This older revision parameter header is
provided for any legacy SFDP reading and parsing software that requires seeing a minor
revision 0 parameter header. SFDP software designed to handle later minor revisions
should continue reading parameter headers looking for a higher numbered minor revision
that contains additional parameters for that software revision.
0Ah 01h Parameter Major Revision (01h = The original major revision - all SFDP software is
compatible with this major revision.
0Bh 09h Parameter Table Length (in double words = Dwords = 4 byte units) 09h = 9 Dwords
0Ch
Parameter
Header 0 2nd
DWORD
90h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC Basic SPI Flash
parameter byte offset = 1090h
0Dh 10h Parameter Table Pointer Byte 1
0Eh 00h Parameter Table Pointer Byte 2
0Fh FFh Parameter ID MSB (FFh = JEDEC defined legacy Parameter ID)
10h
Parameter
Header 1 1st
DWORD
00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter)
11h 05h
Parameter Minor Revision (05h = JESD216 Revision A) - This older revision parameter
header is provided for any legacy SFDP reading and parsing software that requires
seeing a minor revision 5 parameter header. SFDP software designed to handle later
minor revisions should continue reading parameter headers looking for a later minor
revision that contains additional parameters.
12h 01h Parameter Major Revision (01h = The original major revision - all SFDP software is
compatible with this major revision.
13h 10h Parameter Table Length (in double words = Dwords = 4 byte units) 10h = 16 Dwords
14h
Parameter
Header 1 2nd
DWORD
90h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC Basic SPI Flash
parameter byte offset = 1090h address
15h 10h Parameter Table Pointer Byte 1
16h 00h Parameter Table Pointer Byte 2
17h FFh Parameter ID MSB (FFh = JEDEC defined Parameter)
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18h
Parameter
Header 2 1st
DWORD
00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter)
19h 06h Parameter Minor Revision (06h = JESD216 Revision B)
1Ah 01h Parameter Major Revision (01h = The original major revision - all SFDP software is
compatible with this major revision.
1Bh 10h Parameter Table Length (in double words = Dwords = 4 byte units) 10h = 16 Dwords
1Ch
Parameter
Header 2 2nd
DWORD
90h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC Basic SPI Flash
parameter byte offset = 1090h address
1Dh 10h Parameter Table Pointer Byte 1
1Eh 00h Parameter Table Pointer Byte 2
1Fh FFh Parameter ID MSB (FFh = JEDEC defined Parameter)
20h
Parameter
Header 3 1st
DWORD
81h Parameter ID LSB (81h = SFDP Sector Map Parameter)
21h 00h Parameter Minor Revision (00h = Initial version as defined in JESD216 Revision B)
22h 01h Parameter Major Revision (01h = The original major revision - all SFDP software that
recognizes this parameter’s ID is compatible with this major revision.
23h 1Ah (128Mb) 1Ah
(256Mb)
Parameter Table Length (in double words = Dwords = 4 byte units) OPN Dependent 26 =
1Ah (128Mb)
26 = 1Ah (256Mb)
24h
Parameter
Header 3 2nd
DWORD
D8h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC parameter byte offset =
10D8h
25h 10h Parameter Table Pointer Byte 1
26h 00h Parameter Table Pointer Byte 2
27h FFh Parameter ID MSB (FFh = JEDEC defined Parameter)
28h
Parameter
Header 4 1st
DWORD
84h Parameter ID LSB (00h = SFDP 4 Byte Address Instructions Parameter)
29h 00h Parameter Minor Revision (00h = Initial version as defined in JESD216 Revision B)
2Ah 01h Parameter Major Revision (01h = The original major revision - all SFDP software that
recognizes this parameter’s ID is compatible with this major revision.
2Bh 02h Parameter Table Length (in double words = Dwords = 4 byte units) (2h = 2 Dwords)
2Ch
Parameter
Header 4 2nd
DWORD
D0h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC parameter byte offset =
10D0h
2Dh 10h Parameter Table Pointer Byte 1
2Eh 00h Parameter Table Pointer Byte 2
2Fh FFh Parameter ID MSB (FFh = JEDEC defined Parameter)
30h
Parameter
Header 5 1st
DWORD
01h Parameter ID LSB (Cypress Vendor Specific ID-CFI parameter) Legacy Manufacturer ID
01h = AMD / Cypress
31h 01h Parameter Minor Revision (01h = ID-CFI updated with SFDP Rev B table)
32h 01h Parameter Major Revision (01h = The original major revision - all SFDP software that
recognizes this parameter’s ID is compatible with this major revision.
33h 50h (128Mb) 50h
(256Mb)
Parameter Table Length (in double words = Dwords = 4 byte units) Parameter Table
Length (in double words = Dwords = 4 byte units) CFI starts at 1000h, the final SFDP
parameter (CFI ID = A5) starts at 111Eh (SFDP starting point of 1090h -2hB of CFI
parameter header), for a length of 8EhB excluding the CFI A5 parameter.
The final CFI A5 parameter for 128Mb adds an additional B2hB for a total of 8Eh + B2h =
140hB. 140hB/4 = 50h Dwords
The final CFI A5 parameter for 256Mb adds an additional B2hB for a total of 8Eh + B2h =
140hB. 140hB/4 = 50h Dwords
Table 67. SFDP Header (Continued)
SFDP Byte
Address
SFDP Dword
Name Data Description
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11.4 Device ID and Common Flash Interface (ID-CFI) Address Map
11.4.1 Field Definitions
34h
Parameter
Header 5 2nd
DWORD
00h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) Entry point for ID-CFI parameter
is byte offset = 1000h relative to SFDP location zero.
35h 10h Parameter Table Pointer Byte 1
36h 00h Parameter Table Pointer Byte 2
37h 01h Parameter ID MSB (01h = JEDEC JEP106 Bank Number 1)
Table 68. Manufacturer and Device ID
Byte Address Data Description
00h 01h Manufacturer ID for Cypress
01h 20h (128 Mb)
02h (256 Mb) Device ID Most Significant Byte - Memory Interface Type
02h 18h (128 Mb)
19h (256 Mb) Device ID Least Significant Byte - Density
03h 4Dh
ID-CFI Length - number bytes following. Adding this value to the current
location of 03h gives the address of the last valid location in the ID-CFI
legacy address map. The legacy CFI address map ends with the Primary
Vendor-Specific Extended Query. The original legacy length is maintained
for backward software compatibility. However, the CFI Query
Identification String also includes a pointer to the Alternate
Vendor-Specific Extended Query that contains additional information
related to the FS-S family.
04h 00h (Uniform 256-kB physical sectors)
01h (Uniform 64-kB physical sectors)
Physical Sector Architecture
The S25FS-S family may be configured with or without 4-kB parameter
sectors in addition to the uniform sectors.
05h 81h (S25FS-S Family) Family ID
06h xxh ASCII characters for Model
Refer to Ordering Information on page 147 for the model number
definitions.
07h xxh
08h xxh Reserved
09h xxh Reserved
0Ah xxh Reserved
0Bh xxh Reserved
0Ch xxh Reserved
0Dh xxh Reserved
0Eh xxh Reserved
0Fh xxh Reserved
Table 69. CFI Query Identification String
Byte Address Data Description
10h
11h
12h
51h
52h
59h
Query Unique ASCII string “QRY”
Table 67. SFDP Header (Continued)
SFDP Byte
Address
SFDP Dword
Name Data Description
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13h
14h
02h
00h
Primary OEM Command Set
FL-P backward compatible command set ID
15h
16h
40h
00h Address for Primary Extended Table
17h
18h
53h
46h
Alternate OEM Command Set
ASCII characters “FS” for SPI (F) interface, S Technology
19h
1Ah
51h
00h Address for Alternate OEM Extended Table
Table 69. CFI Query Identification String
Byte Address Data Description
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Table 70. CFI System Interface String
Byte Address Data Description
1Bh 17h VCC Min. (erase/program): 100 millivolts BCD
1Ch 19h VCC Max. (erase/program): 100 millivolts BCD
1Dh 00h VPP Min. voltage (00h = no VPP present)
1Eh 00h VPP Max. voltage (00h = no VPP present)
1Fh 09h Typical timeout per single byte program 2N µs
20h 09h Typical timeout for Min. size Page program 2N µs
(00h = not supported)
21h 08h (4 kB or 64 kB)
0Ah (256 kB) Typical timeout per individual Sector Erase 2N ms
22h 10h (128 Mb)
11h (256 Mb) Typical timeout for full chip erase 2N ms (00h = not supported)
23h 02h Max. timeout for byte program 2N times typical
24h 02h Max. timeout for page program 2N times typical
25h 05h (4 kB or 64 kB)
04h (256 kB) Max. timeout per individual Sector Erase 2N times typical
26h 03h Max. timeout for full chip erase 2N times typical
(00h = not supported)
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Note:
1. FS-S devices are user configurable to have either a hybrid sector architect ure (with eight 4-kB sectors and all remaining sectors are uniform 64 kB or 256 kB) or a
uniform sector archi tecture with all sectors uni for m 64 kB or 25 6 kB. FS- S de vi ce s are also user con figurab le t o have t he 4-kB parameter sectors at the top of memory
address space. The CFI geometry information of the above table is relevant only to the initial delivery state. All devices are initially shipped from Cypress with the
hybrid sector architecture with the 4-kB sectors located at the bottom of the array addre ss map. However, the device configuration TBP A RM bit CR1NV[2] may be
programed to inve rt the sect or map to place th e 4-kB sectors at t he to p of the array ad dress map. The 2 0h_NV bit ( CR3NV[3} may be p rogrammed to remove the 4 -kB
sectors from the address map. The flash device driver software must examine the TBPARM and 20h_NV bits to determine if the sector map was inverted or hybrid
sectors re moved at a later time.
Table 71. Device Geometry Definition for Bottom Boot Initial Delivery State
Byte Address Data Description
27h 18h (128 Mb)
19h (256 Mb) Device Size = 2N bytes
28h 02h Flash Device Interface Description;
0000h = x8 only
0001h = x16 only
0002h = x8/x16 capable
0003h = x32 only
0004h = Single I/O SPI, 3-byte address
0005h = Multi I/O SPI, 3-byte address
0102h = Multi I/O SPI, 3- or 4-byte address
29h 01h
2Ah 08h Max. number of bytes in multi-byte write = 2N
0000 = not supported
0008h = 256B page
2Bh 00h
2Ch 03h Number of Erase Block Regions within device
1 = Uniform Device, >1 = Boot Device
2Dh 07h
Erase Block Region 1 Information (refer to JEDEC JEP137)
8 sectors = 8-1 = 0007h
4-kB sectors = 256 bytes x 0010h
2Eh 00h
2Fh 10h
30h 00h
31h 00h
Erase Block Region 2 Information (refer to JEDEC JEP137)
128 Mb and 256 Mb:
1 sector = 1-1 = 0000h
32-kB sector = 256 bytes x 0080h
32h 00h
33h 80h
34h 00h (128 Mb)
00h (256 Mb)
35h FEh
Erase Block Region 3 Information
128 Mb and 256 Mb:
255 sectors = 255-1 = 00FEh (128 Mb)
511 sectors = 511-1 = 01FEh (256 Mb)
64-kB sectors = 0100h x 256 bytes
36h 00h (128 Mb)
01h (256 Mb)
37h 00h
38h 01h (128 Mb)
01h (256 Mb)
39h thru 3Fh FFh RFU
Document Number: 002-00368 Rev. *K Page 132 of 153
S25FS128S
S25FS256S
Table 72. CFI Primary Vendor-Specific Extended Query
Byte Address Data Description
40h 50h
Query-unique ASCII string “PRI” 41h 52h
42h 49h
43h 31h Major version number = 1, ASCII
44h 33h Minor version number = 3, ASCII
45h 21h
Address Sensitive Unlock (Bits 1-0)
00b = Required, 01b = Not Required
Process Technology (Bits 5-2)
0000b = 0.23 µm Floating Gate
0001b = 0.17 µm Floating Gate
0010b = 0.23 µm MirrorBit
0011b = 0.11 µm Floating Gate
0100b = 0.11 µm MirrorBit
0101b = 0.09 µm MirrorBit
1000b = 0.065 µm MirrorBit
46h 02h
Erase Suspend
0 = Not Supported
1 = Read Only
2 = Read and Program
47h 01h
Sector Protect
00 = Not Supported
X = Number of sectors in group
48h 00h
Temporary Sector Unprotect
00 = Not Supported
01 = Supported
49h 08h
Sector Protect/Unprotect Scheme
04 = High Voltage Method
05 = Software Command Locking Method
08 = Advanced Sector Protection Method
4Ah 00h
Simultaneous Operation
00 = Not Supported
X = Number of Sectors
4Bh 01h
Burst Mode (Synchronous sequential read) support
00 = Not Supported
01 = Supported
4Ch 03h
Page Mode Type, initial delivery configuration, user configurable for 512B page
00 = Not Supported
01 = 4 Word Read Page
02 = 8-Read Word Page
03 = 256-byte Program Page
04 = 512-byte Program Page
4Dh 00h ACC (Acceleration) Supply Minimum
00 = Not Supported, 100 mV
4Eh 00h ACC (Acceleration) Supply Maximum
00 = Not Supported, 100 mV
4Fh 07h
WP# Protection
01 = Whole Chip
04 = Uniform Device with Bottom WP Protect
05 = Uniform Device with Top WP Protect
07 = Uniform Device with Top or Bottom Write Protect (user configurable)
50h 01h
Program Suspend
00 = Not Supported
01 = Supported
Document Number: 002-00368 Rev. *K Page 133 of 153
S25FS128S
S25FS256S
The Alternate Vendor-Specific Extended Query provides information related to the expanded command set provided by the FS-S
family. The alternate query parameters use a format in which each parameter begins with an identifier byte and a parameter length
byte. Driver software can check each parameter ID and can use the length value to skip to the next parameter if the parameter is not
needed or not recognized by the software.
Table 73. CFI Alternate Vendor-Specific Extended Query Header
Byte Address Data Description
51h 41h
Query-unique ASCII string “ALT” 52h 4Ch
53h 54h
54h 32h Major version number = 2, ASCII
55h 30h Minor version number = 0, ASCII
Table 74. CFI Alternate Vendor-Specific Extended Query Parameter 0
Parameter Relative
Byte Address Offset Data Description
00h 00h Parameter ID (Ordering Part Number)
01h 10h Parameter Length (The number of following bytes in this parameter. Adding this value to the
current location value +1 = the first byte of the next parameter)
02h 53h ASCII “S” for manufacturer (Cypress)
03h 32h ASCII “25” for Product Characters (Single Die SPI)
04h 35h
05h 46h ASCII “FS” for Interface Characters (SPI 1.8 Volt)
06h 53h
07h 31h (128 Mb)
32h (256 Mb)
ASCII characters for density08h 32h (128 Mb)
35h (256 Mb)
09h 38h (128 Mb)
36h (256 Mb)
0Ah 53h ASCII “S” for Technology (65 nm MirrorBit)
0Bh FFh Reserved for Future Use
0Ch FFh
0Dh FFh Reserved for Future Use
0Eh FFh
0Fh FFh Reserved for Future Use
10h xxh ASCII characters for Model
Refer to Ordering Information on page 147 for the model number definitions.
11h xxh
Table 75. Alternate Vendor-Specific Extended Query Parameter 80h Address Options
Parameter Relative
Byte Address Offset Data Description
00h 80h Parameter ID (Ordering Part Number)
01h 01h Parameter Length (The number of following bytes in this parameter. Adding this value to the
current location value +1 = the first byte of the next parameter)
Document Number: 002-00368 Rev. *K Page 134 of 153
S25FS128S
S25FS256S
02h EBh
Bits 7:5 - Reserved = 111b
Bit 4 - Address Length Bit in CR2V[7] - Yes = 0b
Bit 3 - AutoBoot support - No = 1b
Bit 2 - 4 byte address instructions supported - Yes = 0b
Bit 1 - Bank address + 3-byte address instructions supported - No = 1b
Bit 0 - 3-byte address instructions supported - No = 1b
Table 76. CFI Alternate Vendor-Specific Extended Query Parameter 84h Suspend Commands
Parameter Relative
Byte Address Offset Data Description
00h 84h Parameter ID (Suspend Commands)
01h 08h Parameter Length (The number of following bytes in this parameter. Adding this value to the
current location value +1 = the first byte of the next parameter)
02h 75h Program suspend instruction code
03h 28h Program suspend latency maximum (µs)
04h 7Ah Program resume instruction code
05h 64h Program resume to next suspend typical (µs)
06h 75h Erase suspend instruction code
07h 28h Erase suspend latency maximum (µs)
08h 7Ah Erase resume instruction code
09h 64h Erase resume to next suspend typical (µs)
Table 77. CFI Alternate Vendor-Specific Extended Query Parameter 88h Data Protectio
Parameter Relative
Byte Address Offset Data Description
00h 88h Parameter ID (Data Protection)
01h 04h Parameter Length (The number of following bytes in this parameter. Adding this value to the
current location value +1 = the first byte of the next parameter)
02h 0Ah OTP size 2N bytes, FFh = not supported
03h 01h
OTP address map format,
01h = FL-S and FS-S format
FFh = not supported
04h xxh
Block Protect Type, model dependent
00h = FL-P, FL-S, FS-S
FFh = not supported
05h xxh Advanced Sector Protection type, model dependent
01h = FL-S and FS-S ASP.
Table 78. CFI Alternate Vendor-Specific Extended Query Parameter 8Ch Reset Timing
Parameter Relative
Byte Address Offset Data Description
00h 8Ch Parameter ID (Reset Timing)
01h 06h Parameter Length (The number of following bytes in this parameter. Adding this value to the
current location value +1 = the first byte of the next parameter)
Table 75. Alternate Vendor-Specific Extended Query Parameter 80h Address Options (Continued)
Parameter Relative
Byte Address Offset Data Description
Document Number: 002-00368 Rev. *K Page 135 of 153
S25FS128S
S25FS256S
This parameter type (Parameter ID F0h) may appear multiple times and have a different length each time. The parameter is used to
reserve space in the ID-CFI map or to force space (pad) to align a following parameter to a required boundary.
02h 96h POR maximum value
03h 01h POR maximum exponent 2N µs
04h 23h Hardware Reset maximum value, FFh = not supported (the initial delivery state has hardware
reset disabled but it may be enabled by the user at a later time)
05h 00h Hardware Reset maximum exponent 2N µs
06h 23h Software Reset maximum value, FFh = not supported
07h 00h Software Reset maximum exponent 2N µs
Table 79. CFI Alternate Vendor-Specific Extended Query Parameter 94h ECC
Parameter Relative
Byte Address Offset Data Description
00h 94h Parameter ID (ECC)
01h 01h Parameter Length (The number of following bytes in this parameter. Adding this value to the
current location value +1 = the first byte of the next parameter)
02h 10h ECC unit size byte, FFh = ECC disabled
Table 80. CFI Alternate Vendor-Specific Extended Query Parameter F0h RFU
Parameter Relative
Byte Address Offset Data Description
00h F0h Parameter ID (RFU)
01h 09h Parameter Length (The number of following bytes in this parameter. Adding this value to the
current location value +1 = the first byte of the next parameter)
02h FFh RFU
... FFh RFU
10h FFh RFU
Table 81. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 1, Basic Flash Parameter and 4 Byte Address Instructions Parameter
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP
Relative
Dword Name
Data Description
00h -- N/A A5h CFI Parameter ID (JEDEC SFDP)
01h -- N/A B0h (128Mb)
B0h (256Mb)
CFI Parameter Length (The number of following bytes in this parameter. Adding
this value to the current location value +1 = the first byte of the next parameter).
OPN dependent:
18Dw + 26Dw = 44Dw *4B = 176B = B0h B (128Mb)
B0h (256Mb)
Table 78. CFI Alternate Vendor-Specific Extended Query Parameter 8Ch Reset Timing (Continued)
Parameter Relative
Byte Address Offset Data Description
Document Number: 002-00368 Rev. *K Page 136 of 153
S25FS128S
S25FS256S
02h 00h
JEDEC Basic
Flash
Parameter
Dword-1
E7h
Start of SFDP JEDEC parameter, located at 1090h in the overall SFDP address
space.
Bits 7:5 = unused = 111b
Bit 4:3 = 06h is status register write instruction & status register is default
non-volatile= 00b
Bit 2 = Program Buffer > 64Bytes = 1
Bits 1:0 = Uniform 4KB erase unavailable = 11b
03h 01h FFh Bits 15:8 = Uniform 4KB erase opcode = not supported = FFh
04h 02h B2h
(FSxxxSAG)
Bit 23 = Unused = 1b
Bit 22 = Supports Quad Out Read = No = 0b
Bit 21 = Supports Quad I/O Read = Yes =1b
Bit 20 = Supports Dual I/O Read = Yes = 1b
Bit19 = Supports DDR 0= No, 1 = Yes; FS-SAG = 0b, FS-SDS = 1b
Bit 18:17 = Number of Address Bytes, 3 or 4 = 01b
Bit 16 = Supports Dual Out Read = No = 0b
05h 03h FFh Bits 31:24 = Unused = FFh
06h 04h
JEDEC Basic
Flash
Parameter
Dword-2
FFh
Density in bits, zero based
07h 05h FFh
08h 06h FFh
09h 07h 07h (128Mb)
0Fh (256Mb)
0Ah 08h
JEDEC Basic
Flash
Parameter
Dword-3
48h Bits 7:5 = number of Quad I/O (1-4-4) Mode cycles = 010b Bits
4:0 = number of Quad I/O Dummy cycles = 01000b (Initial Delivery State)
0Bh 09h EBh Quad I/O instruction code
0Ch 0Ah FFh Bits 23:21 = number of Quad Out (1-1-4) Mode cycles = 111b
Bits 20:16 = number of Quad Out Dummy cycles = 11111b
0Dh 0Bh FFh Quad Out instruction code
0Eh 0Ch
JEDEC Basic
Flash
Parameter
Dword-4
FFh Bits 7:5 = number of Dual Out (1-1-2) Mode cycles = 111b
Bits 4:0 = number of Dual Out Dummy cycles = 11111b
0Fh 0Dh FFh Dual Out instruction code
10h 0Eh 88h Bits 23:21 = number of Dual I/O (1-2-2) Mode cycles = 100b
Bits 20:16 = number of Dual I/O Dummy cycles = 01000b (Initial Delivery State)
11h 0Fh BBh Dual I/O instruction code
12h 10h
JEDEC Basic
Flash
Parameter
Dword-5
FEh
Bits 7:5 RFU = 111b
Bit 4 = QPI supported = Yes = 1b
Bits 3:1 RFU = 111b
Bit 0 = Dual All not supported = 0b
13h 11h FFh Bits 15:8 = RFU = FFh
14h 12h FFh Bits 23:16 = RFU = FFh
15h 13h FFh Bits 31:24 = RFU = FFh
16h 14h
JEDEC Basic
Flash
Parameter
Dword-6
FFh Bits 7:0 = RFU = FFh
17h 15h FFh Bits 15:8 = RFU = FFh
18h 16h FFh Bits 23:21 = number of Dual All Mode cycles = 111b
Bits 20:16 = number of Dual All Dummy cycles = 11111b
19h 17h FFh Dual All instruction code
Table 81. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 1, Basic Flash Parameter and 4 Byte Address Instructions Parameter (Continued)
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP
Relative
Dword Name
Data Description
Document Number: 002-00368 Rev. *K Page 137 of 153
S25FS128S
S25FS256S
1Ah 18h
JEDEC Basic
Flash
Parameter
Dword-7
FFh Bits 7:0 = RFU = FFh
1Bh 19h FFh Bits 15:8 = RFU = FFh
1Ch 1Ah 48h Bits 23:21 = number of QPI Mode cycles = 010b
Bits 20:16 = number of QPI Dummy cycles = 01000b
1Dh 1Bh EBh QPI mode Quad I/O (4-4-4) instruction code
1Eh 1Ch
JEDEC Basic
Flash
Parameter
Dword-8
0Ch Erase type 1 size 2N Bytes = 4KB = 0Ch for Hybrid (Initial Delivery State)
1Fh 1Dh 20h Erase type 1 instruction
20h 1Eh 10h Erase type 2 size 2N Bytes = 64KB = 10h
21h 1Fh D8h Erase type 2 instruction
22h 20h
JEDEC Basic
Flash
Parameter
Dword-9
12h Erase type 3 size 2N Bytes = 256KB = 12h
23h 21h D8h Erase type 3 instruction
24h 22h 00h Erase type 4 size 2N Bytes = not supported = 00h
25h 23h FFh Erase type 4 instruction = not supported = FFh
26h 24h
JEDEC Basic
Flash
Parameter
Dword-10
E2h Bits 31:30 = Erase type 4 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b:
128 ms, 11b: 1 s) = 1S = 11b (RFU)
Bits 29:25 = Erase type 4 Erase, Typical time count = 11111b ( RFU)
Bits 24:23 = Erase type 3 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b:
128 ms, 11b: 1 s) = 128mS = 10b
Bits 22:18 = Erase type 3 Erase, Typical time count = 00111b (typ erase time =
count +1 * units = 8*128mS = 930 ms)
Bits 17:16 = Erase type 2 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b:
128 ms, 11b: 1 s) = 16mS = 01b
Bits 15:11 = Erase type 2 Erase, Typical time count = 01110b (typ erase time =
count +1 * units = 15*16mS = 240mS)
Bits 10:9 = Erase type 1 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b:
128 ms, 11b: 1 s) = 16mS = 01b
Bits 8:4 = Erase type 1 Erase, Typical time count = 01110b (typ erase time =
count +1 * units = 15*16mS = 240mS)
Bits 3:0 = Multiplier from typical erase time to maximum erase time = 2*(N+1),
N=2h
Binary Fields: 11-11111-10-00111-01-01110-01-01110-0010 Nibble Format:
1111_1111_0001_1101_0111_0010_1110_0010 Hex Format: FF_11_42_82
27h 25h 72h
28h 26h 1Dh
29h 27h FFh
Table 81. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 1, Basic Flash Parameter and 4 Byte Address Instructions Parameter (Continued)
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP
Relative
Dword Name
Data Description
Document Number: 002-00368 Rev. *K Page 138 of 153
S25FS128S
S25FS256S
2Ah 28h
JEDEC Basic
Flash
Parameter
Dword-11
91h Bit 31 Reserved = 1b
Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms, 10b: 4 s,
11b: 64 s) =
128Mb = 4s = 10b;
256Mb = 4s = 10b
Bits 28:24 = Chip Erase, Typical time count, (count+1)*units,
128Mb = 4s = 01110b = 14+1*4 = 60s;
256Mb = 11101 = 29+1*4 = 120s
Bits 23 = Byte Program Typical time, additional byte units (0b:1uS, 1b:8uS) =
1uS = 0b
Bits 22:19 = Byte Program Typical time, additional byte count, (count+1)*units,
count = 0000b, ( typ Program time = count +1 * units = 1*1uS = 1uS
Bits 18 = Byte Program Typical time, first byte units (0b:1uS, 1b:8uS) = 8uS = 1b
Bits 17:14 = Byte Program Typical time, first byte count, (count+1)*units, count =
1100b, ( typ Program time = count +1 * units = 13*8uS = 104uS
Bits 13 = Page Program Typical time units (0b:8uS, 1b:64uS) = 64uS = 1b
Bits 12:8 = Page Program Typical time count, (count+1)*units, count = 00110b, (
typ Program time = count +1 * units = 7*64uS = 448uS)
Bits 7:4 = Page size 2N, N=9h, = 512B page
Bits 3:0 = Multiplier from typical time to maximum for Page or Byte program =
2*(N+1), N=1h = 4x multiplier
128Mb Binary Fields: 1-10-01110-0-0000-1-1100-1-00110-1001-0001 Nibble
Format: 1100_1110_0000_0111_0010_0110_1001_0001 Hex Format:
C7_07_26_91
256Mb Binary Fields: 1-10-11101-0-0000-1-1100-1-00110-1001-0001 Nibble
Format: 1101_1101_0000_0111_0010_0110_1001_0001 Hex Format:
DD_07_26_91
2Bh 29h 26h
2Ch 2Ah 07h
2Dh 2Bh C7h (128Mb)
DDh (256Mb)
2Eh 2Ch
JEDEC Basic
Flash
Parameter
Dword-12
ECh Bit 31 = Suspend and Resume supported = 0b Bits
30:29 = Suspend in-progress erase max latency units (00b: 128ns, 01b: 1us,
10b: 8us, 11b: 64us) = 8us= 10b
Bits 28:24 = Suspend in-progress erase max latency count = 00100b, max erase
suspend latency = count +1 * units = 5*8uS = 40uS
Bits 23:20 = Erase resume to suspend interval count = 0001b, interval = count
+1 * 64us = 2 * 64us = 128us
Bits 19:18 = Suspend in-progress program max latency units (00b: 128ns, 01b:
1us, 10b: 8us, 11b: 64us) = 8us= 10b Bits
17:13 = Suspend in-progress program max latency count = 00100b, max erase
suspend latency = count +1 * units = 5*8uS = 40uS
Bits 12:9 = Program resume to suspend interval count = 0001b, interval = count
+1 * 64us = 2 * 64us = 128us Bit 8 = RFU = 1b
Bits 7:4 = Prohibited operations during erase suspend = xxx0b: May not initiate a
new erase anywhere (erase nesting not permitted) + xx1xb: May not initiate a
page program in the erase suspended sector size + x1xxb: May not initiate a
read in the erase suspended sector size + 1xxxb: The erase and program
restrictions in bits 5:4 are sufficient = 1110b
Bits 3:0 = Prohibited Operations During Program Suspend = xxx0b: May not
initiate a new erase anywhere (erase nesting not permitted) + xx0xb: May not
initiate a new page program anywhere (program nesting not permitted) + x1xxb:
May not initiate a read in the program suspended page size + 1xxxb: The erase
and program restrictions in bits 1:0 are sufficient = 1100b
Binary Fields: 0-10-00100-0001-10-00100-0001-1-1110-1100 Nibble Format:
0100_0100_0001_1000_1000_0011_1110_1100 Hex Format: 44_18_83_EC
2Fh 2Dh 83h
30h 2Eh 18h
31h 2Fh 44h
Table 81. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 1, Basic Flash Parameter and 4 Byte Address Instructions Parameter (Continued)
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP
Relative
Dword Name
Data Description
Document Number: 002-00368 Rev. *K Page 139 of 153
S25FS128S
S25FS256S
32h 30h
JEDEC Basic
Flash
Parameter
Dword-13
8Ah
Bits 31:24 = Erase Suspend Instruction = 75h
Bits 23:16 = Erase Resume Instruction = 7Ah
Bits 15:8 = Program Suspend Instruction = 85h
Bits 7:0 = Program Resume Instruction = 8Ah
33h 31h 85h
34h 32h 7Ah
35h 33h 75h
36h 34h
JEDEC Basic
Flash
Parameter
Dword-14
F7h Bit 31 = Deep Power Down Supported = supported = 0
Bits 30:23 = Enter Deep Power Down Instruction = B9h
Bits 22:15 = Exit Deep Power Down Instruction = ABh
Bits 14:13 = Exit Deep Power Down to next operation delay units = (00b: 128ns,
01b: 1us, 10b: 8us, 11b: 64us) = 1us = 01b
Bits 12:8 = Exit Deep Power Down to next operation delay count = 11101b, Exit
Deep Power Down to next operation delay = (count+1)*units = 29+1 *1us = 30us
Bits 7:4 = RFU = Fh
Bit 3:2 = Status Register Polling Device Busy = 01b: Legacy status polling
supported = Use legacy polling by reading the Status Register with 05h
instruction and checking WIP bit[0] (0=ready; 1=busy). = 01b
Bits 1:0 = RFU = 11b
Binary Fields: 0-10111001-10101011-01-11101-1111-01-11 Nibble Format:
0101_1100_1101_0101_1011_1101_1111_0111 Hex Format: 5C_D5_BD_F7
37h 35h BDh
38h 36h D5h
39h 37h 5Ch
3Ah 38h
JEDEC Basic
Flash
Parameter
Dword-15
8Ch Bits 31:24 = RFU = FFh
Bit 23 = Hold and WP Disable = not supported = 0b
Bits 22:20 = Quad Enable Requirements = 101b: QE is bit 1 of the status register
2. Status register 1 is read using Read Status instruction 05h. Status register 2 is
read using instruction 35h. QE is set via Write Status instruction 01h with two
data bytes where bit 1 of the second byte is one. It is cleared via Write Status
with two data bytes where bit 1 of the second byte is zero.
Bits 19:16 0-4-4 Mode Entry Method = xxx1b: Mode Bits[7:0] = A5h Note: QE
must be set prior to using this mode + x1xxb: Mode Bit[7:0]=Axh + 1xxxb: RFU =
1101b Bits 15:10 0-4-4 Mode Exit Method = xx_xxx1b: Mode Bits[7:0] = 00h will
terminate this mode at the end of the current read operation + xx_1xxxb: Input
Fh (mode bit reset) on DQ0-DQ3 for 8 clocks. This will terminate the mode prior
to the next read operation. + x1_xxxxb: Mode Bit[7:0] != Axh + 1x_x1xx: RFU =
11_1101
Bit 9 = 0-4-4 mode supported = 1
Bits 8:4 = 4-4-4 mode enable sequences = x_1xxxb: device uses a
read-modify-write sequence of operations: read configuration using instruction
65h followed by address 800003h, set bit 6, write configuration using instruction
71h followed by address 800003h. This configuration is volatile. = 01000b
Bits 3:0 = 4-4-4 mode disable sequences = x1xxb: device uses a
read-modify-write sequence of operations: read configuration instruction 65h
followed by address 800003h, clear bit 6, write configuration using instruction
71h followed by address 800003h.. This configuration is volatile. + 1xxxb: issue
the Soft Reset 66/99 sequence = 1100b
Binary Fields: 11111111-0-101-1101-111101-1-01000-1100 Nibble Format:
1111_1111_0101_1101_1111_0110_1000-1100 Hex Format: FF_5D_F6_8C
3Bh 39h F6h
3Ch 3Ah 5Dh
3Dh 3Bh FFh
Table 81. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 1, Basic Flash Parameter and 4 Byte Address Instructions Parameter (Continued)
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP
Relative
Dword Name
Data Description
Document Number: 002-00368 Rev. *K Page 140 of 153
S25FS128S
S25FS256S
3Eh 3Ch
JEDEC Basic
Flash
Parameter
Dword-16
F0h Bits 31:24 = Enter 4-Byte Addressing = xxxx_xxx1b: issue instruction B7h
(preceding write enable not required) + xx1x_xxxxb: Supports dedicated 4-Byte
address instruction set. Consult vendor data sheet for the instruction set
definition. + 1xxx_xxxxb: Reserved = 10100001b
Bits 23:14 = Exit 4-Byte Addressing = xx_xx1x_xxxxb: Hardware reset +
xx_x1xx_xxxxb: Software reset (see bits 13:8 in this DWORD) + xx_1xxx_xxxxb:
Power cycle + x1_xxxx_xxxxb: Reserved + 1x_xxxx_xxxxb: Reserved =
11_1110_0000b
Bits 13:8 = Soft Reset and Rescue Sequence Support = x1_xxxxb: issue reset
enable instruction 66h, then issue reset instruction 99h. The reset enable, reset
sequence may be issued on 1, 2, or 4 wires depending on the device operating
mode. + 1x_xxxxb: exit 0-4-4 mode is required prior to other reset sequences
above if the device may be operating in this mode. = 110000b
Bit 7 = RFU = 1
Bits 6:0 = Volatile or Non-Volatile Register and Write Enable Instruction for
Status Register 1 = + xx1_xxxxb: Status Register 1 contains a mix of volatile and
non-volatile bits. The 06h instruction is used to enable writing of the register. +
x1x_xxxxb: Reserved + 1xx_xxxxb: Reserved = 1110000b
Binary Fields: 10100001-1111100000-110000-1-1110000 Nibble Format:
1010_0001_1111_1000_0011_0000_1111_0000 Hex Format: A1_F8_30_F0
3Fh 3Dh 30h
40h 3Eh F8h
41h 3Fh A1h
42h 40h
JEDEC 4 Byte
Address
Instructions
Parameter
Dword-1
6Bh Supported = 1, Not Supported = 0
Bits 31:20 = RFU = FFFh
Bit 19 = Support for non-volatile individual sector lock write command,
Instruction=E3h = 1
Bit 18 = Support for non-volatile individual sector lock read command,
Instruction=E2h = 1
Bit 17 = Support for volatile individual sector lock Write command,
Instruction=E1h = 1
Bit 16 = Support for volatile individual sector lock Read command,
Instruction=E0h = 1
Bit 15 = Support for (1-4-4) DTR_Read Command, Instruction = EEh = 1
Bit 14 = Support for (1-2-2) DTR_Read Command, Instruction = BEh = 0
Bit 13 = Support for (1-1-1) DTR_Read Command, Instruction = 0Eh = 0
Bit 12 = Support for Erase Command – Type 4 = 0
Bit 11 = Support for Erase Command – Type 3 = 1
Bit 10 = Support for Erase Command – Type 2 = 1
Bit 9 = Support for Erase Command – Type 1 = 1
Bit 8 = Support for (1-4-4) Page Program Command, Instruction = 3Eh =0
Bit 7 = Support for (1-1-4) Page Program Command, Instruction = 34h = 0
Bit 6 = Support for (1-1-1) Page Program Command, Instruction = 12h = 1
Bit 5 = Support for (1-4-4) FAST_READ Command, Instruction = ECh = 1
Bit 4 = Support for (1-1-4) FAST_READ Command, Instruction = 6Ch = 0
Bit 3 = Support for (1-2-2) FAST_READ Command, Instruction = BCh = 1
Bit 2 = Support for (1-1-2) FAST_READ Command, Instruction = 3Ch = 0
Bit 1 = Support for (1-1-1) FAST_READ Command, Instruction = 0Ch = 1
Bit 0 = Support for (1-1-1) READ Command, Instruction=13h = 1
43h 41h 8Eh
44h 42h FFh
45h 43h FFh
46h 44h JEDEC 4 Byte
Address
Instructions
Parameter
Dword-2
21h
Bits 31:24 = FFh = Instruction for Erase Type 4: RFU
Bits 23:16 = DCh = Instruction for Erase Type 3
Bits 15:8 = DCh = Instruction for Erase Type 2
Bits 7:0 = 21h = Instruction for Erase Type 1
47h 45h DCh
48h 46h DCh
49h 47h FFh
Table 81. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 1, Basic Flash Parameter and 4 Byte Address Instructions Parameter (Continued)
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP
Relative
Dword Name
Data Description
Document Number: 002-00368 Rev. *K Page 141 of 153
S25FS128S
S25FS256S
Table 82. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 2, Sector Map Parameter Table, 128Mb and 256Mb
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP Dword
Name Data Description
4Ah 48h
JEDEC Sector
Map
Parameter
Dword-1
Config.
Detect-1
FCh Bits 31:24 = Read data mask = 0000_1000b: Select bit 3 of the data byte for
20h_NV value 0= Hybrid map with 4KB parameter sectors 1= Uniform map
Bits 23:22 = Configuration detection command address length = 11b: Variable
length
Bits 21:20 = RFU = 11b
Bits 19:16 = Configuration detection command latency = 1111b: variable latency
Bits 15:8 = Configuration detection instruction = 65h: Read any register
Bits 7:2 = RFU = 111111b
Bit 1 = Command Descriptor = 0
Bit 0 = not the end descriptor = 0
4Bh 49h 65h
4Ch 4Ah FFh
4Dh 4Bh 08h
4Eh 4Ch JEDEC Sector
Map
Parameter
Dword-2
Config.
Detect-1
04h
Bits 31:0 = Sector map configuration detection command address =
00_00_00_04h: address of CR3NV
4Fh 4Dh 00h
50h 4Eh 00h
51h 4Fh 00h
52h 50h
JEDEC Sector
Map
Parameter
Dword-3
Config.
Detect-2
FCh Bits 31:24 = Read data mask = 0000_0100b: Select bit 2 of the data byte for
TBPARM_O value
0= 4KB parameter sectors at bottom
1= 4KB parameter sectors at top
Bits 23:22 = Configuration detection command address length = 11b: Variable
length
Bits 21:20 = RFU = 11b
Bits 19:16 = Configuration detection command latency = 1111b: variable latency
Bits 15:8 = Configuration detection instruction = 65h: Read any register
Bits 7:2 = RFU = 111111b
Bit 1 = Command Descriptor = 0
Bit 0 = not the end descriptor = 0
53h 51h 65h
54h 52h FFh
55h 53h 04h
56h 54h JEDEC Sector
Map
Parameter
Dword-4
Config.
Detect-2
02h
Bits 31:0 = Sector map configuration detection command address =
00_00_00_02h: address of CR1NV
57h 55h 00h
58h 56h 00h
59h 57h 00h
5Ah 58h
JEDEC Sector
Map
Parameter
Dword-5
Config.
Detect-3
FDh Bits 31:24 = Read data mask = 0000_0010b: Select bit 1 of the data byte for
D8h_NV value 0= 64KB uniform sectors 1= 256KB uniform sectors
Bits 23:22 = Configuration detection command address length = 11b: Variable
length
Bits 21:20 = RFU = 11b
Bits 19:16 = Configuration detection command latency = 1111b: variable latency
Bits 15:8 = Configuration detection instruction = 65h: Read any register
Bits 7:2 = RFU = 111111b
Bit 1 = Command Descriptor = 0
Bit 0 = The end descriptor = 1
5Bh 59h 65h
5Ch 5Ah FFh
5Dh 5Bh 02h
5Eh 5Ch JEDEC Sector
Map
Parameter
Dword-6
Config.
Detect-3
04h
Bits 31:0 = Sector map configuration detection command address =
00_00_00_04h: address of CR3NV
5Fh 5Dh 00h
60h 5Eh 00h
61h 5Fh 00h
Document Number: 002-00368 Rev. *K Page 142 of 153
S25FS128S
S25FS256S
62h 60h JEDEC Sector
Map
Parameter
Dword-7
Config-0
Header
FEh Bits 31:24 = RFU = FFh
Bits 23:16 = Region count (Dwords -1) = 02h: Three regions
Bits 15:8 = Configuration ID = 00h: 4KB sectors at bottom with remainder 64KB
sectors
Bits 7:2 = RFU = 111111b
Bit 1 = Map Descriptor = 1
Bit 0 = not the end descriptor = 0
63h 61h 00h
64h 62h 02h
65h 63h FFh
66h 64h
JEDEC Sector
Map
Parameter
Dword-8
Config-0
Region-0
F1h Bits 31:8 = Region size = 00007Fh: Region size as count-1 of 256 Byte units = 8
x 4KB sectors = 32KB Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127
= 7Fh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 0b ---Erase Type 3 is 256KB erase and is not
supported in the 4KB sector region
Bit 1 = Erase Type 2 support = 0b ---Erase Type 2 is 64KB erase and is not
supported in the 4KB sector region
Bit 0 = Erase Type 1 support = 1b ---Erase Type 1 is 4KB erase and is supported
in the 4KB sector region
67h 65h 7Fh
68h 66h 00h
69h 67h 00h
6Ah 68h
JEDEC Sector
Map
Parameter
Dword-9
Config-0
Region-1
F2h Bits 31:8 = Region size = 00007Fh: Region size as count-1 of 256 Byte units = 1
x 32KB sectors = 32KB Count = 32KB/256 = 128, value = count -1 = 128 -1 =
127 = 7Fh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 0b ---Erase Type 3 is 256KB erase and is not
supported in the 32KB sector region
Bit 1 = Erase Type 2 support = 1b ---Erase Type 2 is 64KB erase and is
supported in the 32KB sector region
Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not
supported in the 32KB sector region
6Bh 69h 7Fh
6Ch 6Ah 00h
6Dh 6Bh 00h
6Eh 6Ch
JEDEC Sector
Map
Parameter
Dword-10
Config-0
Region-2
F2h Bits 31:8 = 128Mb device Region size = 00FEFFh:
Region size as count-1 of 256 Byte units = 255 x 64KB sectors = 16320KB
Count = 16320KB/256 = 65280, value = count -1 = 65280 -1 = 65279 = FEFFh
Bits 31:8 = 256Mb device Region size = 01FEFFh: Region size as count-1 of
256 Byte units = 511 x 64KB sectors = 32704KB Count = 32704KB/256 =
130816, value = count -1 = 130816 -1 = 130815 = 1FEFFh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 0b ---Erase Type 3 is 256KB erase and is not
supported in the 64KB sector region
Bit 1 = Erase Type 2 support = 1b ---Erase Type 2 is 64KB erase and is
supported in the 64KB sector region
Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not
supported in the 64KB sector region
6Fh 6Dh FFh
70h 6Eh FEh
71h 6Fh 00h (128Mb)
01h (256Mb)
72h 70h JEDEC Sector
Map
Parameter
Dword-11
Config-2
Header
FEh
Bits 31:24 = RFU = FFh Bits 23:16 = Region count (Dwords -1) = 02h: Three
regions Bits 15:8 = Configuration ID = 02h: 4KB sectors at top with remainder
64KB sectors Bits 7:2 = RFU = 111111b Bit 1 = Map Descriptor = 1 Bit 0 = not the
end descriptor = 0
73h 71h 02h
74h 72h 02h
75h 73h FFh
Table 82. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 2, Sector Map Parameter Table, 128Mb and 256Mb (Continued)
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP Dword
Name Data Description
Document Number: 002-00368 Rev. *K Page 143 of 153
S25FS128S
S25FS256S
76h 74h
JEDEC Sector
Map
Parameter
Dword-12
Config-2
Region-0
F2h Bits 31:8 = 128Mb device Region size = 00FEFFh: Region size as count-1 of
256 Byte units = 255 x 64KB sectors = 16320KB Count = 16320KB/256 = 65280,
value = count -1 = 65280 -1 = 65279 = FEFFh
Bits 31:8 = 256Mb device Region size = 01FEFFh: Region size as count-1 of
256 Byte units = 511 x 64KB sectors = 32704KB Count = 32704KB/256 =
130816, value = count -1 = 130816 -1 = 130815 = 1FEFFh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 0b ---Erase Type 3 is 256KB erase and is not
supported in the 64KB sector region
Bit 1 = Erase Type 2 support = 1b ---Erase Type 2 is 64KB erase and is
supported in the 64KB sector region
Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not
supported in the 64KB sector region
77h 75h FFh
78h 76h FEh
79h 77h 00h (128Mb)
01h (256Mb)
7Ah 78h
JEDEC Sector
Map
Parameter
Dword-13
Config-2
Region-1
F2h Bits 31:8 = Region size = 00007Fh:
Region size as count-1 of 256 Byte units = 1 x 32KB sectors = 32KB
Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127 = 7Fh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 0b ---Erase Type 3 is 256KB erase and is not
supported in the 32KB sector region
Bit 1 = Erase Type 2 support = 1b ---Erase Type 2 is 64KB erase and is
supported in the 32KB sector region
Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not
supported in the 32KB sector region
7Bh 79h 7Fh
7Ch 7Ah 00h
7Dh 7Bh 00h
7Eh 7C
JEDEC Sector
Map
Parameter
Dword-14
Config-2
Region-2
F1h Bits 31:8 = Region size = 00007Fh:
Region size as count-1 of 256 Byte units = 8 x 4KB sectors = 32KB
Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127 = 7Fh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 0b ---Erase Type 3 is 256KB erase and is not
supported in the 4KB sector region
Bit 1 = Erase Type 2 support = 0b ---Erase Type 2 is 64KB erase and is not
supported in the 4KB sector region
Bit 0 = Erase Type 1 support = 1b ---Erase Type 1 is 4KB erase and is supported
in the 4KB sector region
7Fh 7D 7Fh
80h 7E 00h
81h 7F 00h
82h 80h JEDEC Sector
Map
Parameter
Dword-15
Config-1
Header
FEh Bits 31:24 = RFU = FFh Bits 23:16 = Region count (Dwords -1) = 02h: Three
regions
Bits 15:8 = Configuration ID = 01h: 4KB sectors at bottom with remainder 256KB
sectors
Bits 7:2 = RFU = 111111b
Bit 1 = Map Descriptor = 1
Bit 0 = not the end descriptor = 0
83h 81h 01h
84h 82h 02h
85h 83h FFh
86h 84h
JEDEC Sector
Map
Parameter
Dword-16
Config-1
Region-0
F1h Bits 31:8 = Region size = 00007Fh:
Region size as count-1 of 256 Byte units = 8 x 4KB sectors = 32KB
Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127 = 7Fh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 0b --- Erase Type 3 is 256KB erase and is
supported in the 4KB sector region
Bit 1 = Erase Type 2 support = 0b ---Erase Type 2 is 64KB erase and is not
supported in the 4KB sector region
Bit 0 = Erase Type 1 support = 1b ---Erase Type 1 is 4KB erase and is supported
in the 4KB sector region
87h 85h 7Fh
88h 86h 00h
89h 87h 00h
Table 82. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 2, Sector Map Parameter Table, 128Mb and 256Mb (Continued)
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP Dword
Name Data Description
Document Number: 002-00368 Rev. *K Page 144 of 153
S25FS128S
S25FS256S
8Ah 88h
JEDEC Sector
Map
Parameter
Dword-17
Config-1
Region-1
F4h Bits 31:8 = Region size = 00037Fh:
Region size as count-1 of 256 Byte units = 1 x 224KB sectors = 224KB Count =
224KB/256 = 896, value = count -1 = 896 -1 = 895 = 37Fh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 1b ---Erase Type 3 is 256KB erase and is
supported in the 32KB sector region
Bit 1 = Erase Type 2 support = 0b ---Erase Type 2 is 64KB erase and is not
supported in the 32KB sector region
Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not
supported in the 32KB sector region
8Bh 89h 7Fh
8Ch 8Ah 03h
8Dh 8Bh 00h
8Eh 8Ch
JEDEC Sector
Map
Parameter
Dword-18
Config-1
Region-2
F4h Bits 31:8 = 128Mb device Region size = 00FBFFh:
Region size as count-1 of 256 Byte units = 63 x 256KB sectors = 16128KB
Count = 16128KB/256 = 64512, value = count -1 = 64512 -1 = 64511 = FBFFh
Bits 31:8 = 256Mb device Region size = 01FBFFh:
Region size as count-1 of 256 Byte units = 127 x 256KB sectors = 32512KB
Count = 32512KB/256 = 130048, value = count -1 = 130048 -1 = 130047 =
1FBFFh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 1b ---Erase Type 3 is 256KB erase and is
supported in the 64KB sector region
Bit 1 = Erase Type 2 support = 0b ---Erase Type 2 is 64KB erase and is not
supported in the 64KB sector region
Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not
supported in the 64KB sector region
8Fh 8Dh FFh
90h 8Eh FBh
91h 8F 00h (128Mb)
01h (256Mb)
92h 90h JEDEC Sector
Map
Parameter
Dword-19
Config-3
Header
FEh Bits 31:24 = RFU = FFh
Bits 23:16 = Region count (Dwords -1) = 02h: Three regions
Bits 15:8 = Configuration ID = 03h: 4KB sectors at top with remainder 256KB
sectors
Bits 7:2 = RFU = 111111b
Bit 1 = Map Descriptor = 1
Bit 0 = not the end descriptor = 0
93h 91h 03h
94h 92h 02h
95h 93h FFh
96h 94h
JEDEC Sector
Map
Parameter
Dword-20
Config-3
Region-0
F4h Bits 31:8 = 128Mb device Region size = 00FBFFh:
Region size as count-1 of 256 Byte units = 63 x 256KB sectors = 16128KB
Count = 16128KB/256 = 64512, value = count -1 = 64512 -1 = 64511 = FBFFh
Bits 31:8 = 256Mb device Region size = 01FBFFh: Region size as count-1 of
256 Byte units = 127 x 256KB sectors = 32512KB Count = 32512KB/256 =
130048, value = count -1 = 130048 -1 = 130047 = 1FBFFh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 1b ---Erase Type 3 is 256KB erase and is
supported in the 256KB sector region
Bit 1 = Erase Type 2 support = 0b ---Erase Type 2 is 64KB erase and is not
supported in the 256KB sector region
Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not
supported in the 256KB sector region
97h 95h FFh
98h 96h FBh
99h 97h 00h (128Mb)
01h (256Mb)
9Ah 98h
JEDEC Sector
Map
Parameter
Dword-21
Config-3
Region-1
F4h Bits 31:8 = Region size = 00037Fh:
Region size as count-1 of 256 Byte units = 1 x 224KB sectors = 224KB Count =
224KB/256 = 896, value = count -1 = 896 -1 = 895 = 37Fh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 1b ---Erase Type 3 is 256KB erase and is
supported in the 224KB sector region
Bit 1 = Erase Type 2 support = 0b ---Erase Type 2 is 64KB erase and is not
supported in the 224KB sector region
Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not
supported in the 224KB sector region
9Bh 99h 7Fh
9Ch 9Ah 03h
9Dh 9Bh 00h
Table 82. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 2, Sector Map Parameter Table, 128Mb and 256Mb (Continued)
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP Dword
Name Data Description
Document Number: 002-00368 Rev. *K Page 145 of 153
S25FS128S
S25FS256S
9Eh 9Ch
JEDEC Sector
Map
Parameter
Dword-22
Config-3
Region-2
F1h Bits 31:8 = Region size = 00007Fh:
Region size as count-1 of 256 Byte units = 8 x 4KB sectors = 32KB
Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127 = 7Fh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 0b ---Erase Type 3 is 256KB erase and is not
supported in the 4KB sector region
Bit 1 = Erase Type 2 support = 0b ---Erase Type 2 is 64KB erase and is not
supported in the 4KB sector region
Bit 0 = Erase Type 1 support = 1b ---Erase Type 1 is 4KB erase and is supported
in the 4KB sector region
9Fh 9Dh 7Fh
A0h 9Eh 00h
A1h 9Fh 00h
A2h A0h JEDEC Sector
Map
Parameter
Dword-23
Config-4
Header
FEh Bits 31:24 = RFU = FFh
Bits 23:16 = Region count (Dwords -1) = 00h: One region
Bits 15:8 = Configuration ID = 04h: Uniform 64KB sectors
Bits 7:2 = RFU = 111111b
Bit 1 = Map Descriptor = 1
Bit 0 = not the end descriptor = 0
A3h A1h 04h
A4h A2h 00h
A5h A3h FFh
A6h A4h
JEDEC Sector
Map
Parameter
Dword-24
Config-4
Region-0
F2h Bits 31:8 = 128Mb device
Region size = 00FFFFh: Region size as count-1 of 256 Byte units = 256 x 64KB
sectors = 16MB
Count = 16MB/256 = 65536, value = count -1 = 65536 -1 = 65535 = FFFFh Bits
31:8 = 256Mb device Region size = 01FFFFh: Region size as count-1 of 256
Byte units = 512 x 64KB sectors = 32MB Count = 32MB/256 = 131072, value =
count -1 = 131072 -1 = 131071 = 1FFFFh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 0b ---Erase Type 3 is 256KB erase and is not
supported in the 64KB sector region
Bit 1 = Erase Type 2 support = 1b ---Erase Type 2 is 64KB erase and is
supported in the 64KB sector region
Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not
supported in the 64KB sector region
A7h A5h FFh
A8h A6h FFh
A9h A7h 00h (128Mb)
01h (256Mb)
AAh A8h JEDEC Sector
Map
Parameter
Dword-25
Config-5
Header
FFh Bits 31:24 = RFU = FFh
Bits 23:16 = Region count (Dwords -1) = 00h: One region
Bits 15:8 = Configuration ID = 05h: Uniform 256KB sectors
Bits 7:2 = RFU = 111111b
Bit 1 = Map Descriptor = 1
Bit 0 = The end descriptor = 1
ABh A9h 05h
ACh AAh 00h
ADh ABh FFh
AEh ACh
JEDEC Sector
Map
Parameter
Dword-26
Config-5
Region-0
F4h Bits 31:8 = 128Mb device
Region size = 00FFFFh: Region size as count-1 of 256 Byte units = 64 x 256KB
sectors = 16MB
Count = 16MB/256 = 65536, value = count -1 = 65536 -1 = 65535 = FFFFh Bits
31:8 = 256Mb device Region size = 01FFFFh: Region size as count-1 of 256
Byte units = 128 x 256KB sectors = 32MB Count = 32MB/256 = 131072, value =
count -1 = 131072 -1 = 131071 = 1FFFFh
Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1
Bit 3 = Erase Type 4 support = 0b ---Erase Type 4 is not defined
Bit 2 = Erase Type 3 support = 1b ---Erase Type 3 is 256KB erase and is
supported in the 256KB sector region
Bit 1 = Erase Type 2 support = 0b ---Erase Type 2 is 64KB erase and is not
supported in the 256KB sector region
Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not
supported in the 256KB sector region
AFh ADh FFh
B0h AEh FFh
B1h AFh 00h (128Mb)
01h (256Mb)
Table 82. CFI Alternate Vendor-Specific Extended Query Parameter A5h, JEDEC SFDP
Rev B, Section 2, Sector Map Parameter Table, 128Mb and 256Mb (Continued)
CFI Parameter
Relative Byte
Address
Offset
SFDP
Parameter
Relative Byte
Address
Offset
SFDP Dword
Name Data Description
Document Number: 002-00368 Rev. *K Page 146 of 153
S25FS128S
S25FS256S
11.5 Initial Delivery State
The device is shipped from Cypress with non-volatile bits set as follows:
The entire memory array is erased: i.e. all bits are set to 1 (each byte contains FFh).
The OTP address space has the first 16 bytes programmed to a random number. All other bytes are erased to FFh.
The 33DP address space contains the values as defined in the description of the SFDP address space.
The ID-CFI address space contains the values as defined in the description of the ID-CFI address space.
The Status Register 1 Non-Volatile contains 00h (all SR1NV bits are cleared to 0’s).
The Configuration Register 1 Non-Volatile contains 00h.
The Configuration Register 2 Non-Volatile contains 08h.
The Configuration Register 3 Non-Volatile contains 00h.
The Configuration Register 4 Non-Volatile contains 10h.
The Password Register contains FFFFFFFF–FFFFFFFFh.
All PPB bits are 1.
The ASP Register bits are FFFFh.
Document Number: 002-00368 Rev. *K Page 147 of 153
S25FS128S
S25FS256S
Ordering Information
12. Ordering Part Number
The ordering part number is formed by a valid combination of the following:
S25FS 256 S AG M F I 00 1
Packing Type
0 = Tray
1 = Tube
3 = 13” Tape and Reel
Model Number (Additional Ordering Options)
00 = SOIC16 / WSON 6x8 mm footprint
10 = SOIC8 / WSON 6x5 mm footprint
20 = 5x5 ball BGA footprint
30 = 4x6 ball BGA footprint
1D = SOIC8, DDR
Temperature Range / Grade
I = Industrial (–40°C to + 85°C)
V = Industrial Plus (–40°C to + 105°C)
A = Automotive, AEC-Q100 Grade 3 (-40°C to +85°C)
B = Automotive, AEC-Q100 Grade 2 (-40°C to +105°C)
M = Automotive, AEC-Q100 Grade 1 (-40°C to +125°C)
Package Materials
F = Lead (Pb)-free
H = Low-Halogen, Lead (Pb)-free
Package Type
M = 16-pin SOIC / 8-Lead SOIC
N = 8-contact WSON 6 x 8 mm / WSON 6 x 5 mm
B = 24-ball BGA 6 x 8 mm package, 1.00 mm pitch
Speed
AG= 133 MHz SDR
DS = 80 MHz DDR
Device Technology
S = 65 nm MirrorBit Process Technology
Density
128= 128 Mbit
256= 256 Mbit
Device Family
S25FS
Cypress Memory 1.8 Volt-Only, Serial Peripheral Interface (SPI) Flash
Memory
Document Number: 002-00368 Rev. *K Page 148 of 153
S25FS128S
S25FS256S
Valid Combinations — Standard
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
Table 83. S25FS128S, S25FS256S Valid Combinations — Standard
Valid Combinations
Base Ordering
Part Number
Speed
Option
Package and
Temperature Model Number Packing Type Package Marking
S25FS128S
AG MFI, MFV 10 0, 1, 3 FS128S + (Temp) + F + (Model Number)
AG NFI, NFV 00, 10 0, 1, 3 FS128S + A + (Temp) + F + (Model Number)
AG BHI, BHV 20, 30 0, 3 FS128S + A + (Temp) + H + (Model Number)
DS MFI, MFV 1D 0, 1, 3 FS128S + (Temp) + F + (Model Number)
DS NFI, NFV 00, 10 0, 1, 3 FS128S + D + (Temp) + F + (Model Number)
DS BHI, BHV 20, 30 0, 3 FS128S + D + (Temp) + H + (Model Number)
S25FS256S
AG MFI, MFV 00 0, 1, 3 FS256S + A + (Temp) + F + (Model Number)
AG NFI, NFV 00 0, 1, 3 FS256S + A + (Temp) + F + (Model Number)
AG BHI, BHV 20, 30 0, 3 FS256S + A + (Temp) + H + (Model Number)
DS MFI, MFV 00 0, 1, 3 FS256S + D + (Temp) + F + (Model Number)
DS NFI, NFV 00 0, 1, 3 FS256S + D + (Temp) + F + (Model Number)
DS BHI, BHV 20, 30 0, 3 FS256S + D + (Temp) + H + (Model Number)
Document Number: 002-00368 Rev. *K Page 149 of 153
S25FS128S
S25FS256S
Valid Combinations — Automotive Grade / AEC-Q100
The table below lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in volume. The
table will be updated as new combinations are released. Consult your local sales representative to confirm availability of specific
combinations and to check on newly released combinations.
Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products.
Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in
combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with
ISO/TS-16949 requirements.
AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949
compliance.
13. Contact
Obtain the latest list of company locations and contact information at www.cypress.com/contact-us.
Table 84. S25FS128S, S25FS256S Valid Combinations — Automotive Grade / AEC-Q100
Valid Combinations
Base Ordering
Part Number
Speed
Option Package and Temperature Model Number Packing Type Package Marking
S25FS128S
AG MFA, MFB, MFM 10 0, 1, 3 FS128S + (Temp) + F + (Model Number)
AG NFA, NFB, NFM 00, 10 0, 1, 3 FS128S + A + (Temp) + F + (Model Number)
AG BHA, BHB, BHM 20, 30 0, 3 FS128S + A + (Temp) + H + (Model Number)
DS MFA, MFB, MFM 1D 0, 1, 3 FS128S + (Temp) + F + (Model Number)
DS NFA, NFB, NFM 00, 10 0, 1, 3 FS128S + D + (Temp) + F + (Model Number)
DS BHA, BHB, BHM 20, 30 0, 3 FS128S + D + (Temp) + H + (Model Number)
S25FS256S
AG MFA, MFB, MFM 00 0, 1, 3 FS256S + A + (Temp) + F + (Model Number)
AG NFA, NFB, NFM 00 0, 1, 3 FS256S + A + (Temp) + F + (Model Number)
AG BHA, BHB, BHM 20, 30 0, 3 FS256S + A + (Temp) + H + (Model Number)
DS MFA, MFB, MFM 00 0, 1, 3 FS256S + D + (Temp) + F + (Model Number)
DS NFA, NFB, NFM 00 0, 1, 3 FS256S + D + (Temp) + F + (Model Number)
DS BHA, BHB, BHM 20, 30 0, 3 FS256S + D + (Temp) + H + (Model Number)
Document Number: 002-00368 Rev. *K Page 150 of 153
S25FS128S
S25FS256S
Revision History
Document Title: S25FS128S/S25FS256S, 1.8 V, Serial Peripheral Interface with Multi-I/O, MirrorBit® Non-Volatile Flash
Document Number: 002-00368
Rev. ECN No. Orig. of
Change
Submission
Date Description of Change
** - ANSI 04/05/2013 Initial release
*A - ANSI 04/08/2013 Initial Delivery State
Corrected information on Configuration Register 2
*B - ANSI 08/22/2013 Global Replaced ‘Quad All’ with ‘QPI’
Performance Summary Typical Program and Erase Rates table: corrected kbytes / s
Migration Notes Spansion SPI Families Comparison table: corrected Page Program-
ming Rate (typ.) for FS-S
DC Characteristics FS-S DC Characteristics table: added ISB (Automotive)
SDR AC Characteristics AC Characteristics table: updated Parameter for FSCK, C
Registers
Latency Code (Cycles) Versus Frequency table:
updated table
added Note 4
Embedded Algorithm Performance Tables
Program and Erase Performance table: corrected Typ and Max values for tPP
Ordering Information
Added 1D and 5D to Model Number
Valid Combinations table: corrected Model Number for S25FS128S
*C - ANSI 11/06/2013 Global
Changed data sheet designation from “Advance Information” to “Preliminary” Changed
USON to WSON
Physical Interface
Added figure: 8-Pin Plastic Small Outline Package (SOIC8)
Updated figure: 8-Connector Package (WSON 6x5)
Removed figure: VSOP Thin 8-Lead, 208 mil Body Width, (SOV008)
Configuration Register 4 Updated Output Impedance Control table
Ordering Information Updated Model Numbers and Package Type
*D - ANSI 12/20/2013 Migration Notes Changed Quad Read Speed (DDR) for FL-S
DDR AC Characteristics Updated AC Characteristics 80 MHz Operation table
DDR Output Timing SPI DDR Data Valid Window figure: updated figure and Notes
*E - ANSI 11/06/2014 Global
Changed ‘Quad All’ to ‘QPI’
Changed ‘SCLK’ to ‘SCK’
Performance Summary Typical Current Consumption (–40°C to +85°C) table: added
Deep Power-Down
Migration Notes
Spansion SPI Families Comparison table: added Deep Power-Down
Updated Deep Power-Down section
Interface States Updated Interface Standby section
Data Protection Added Deep Power-Down (DPD) section
DC Characteristics
FS-S DC Characteristics table: added IDPD (Industrial and Automotive)
Updated Active Power and Standby Power Modes section
SDR AC Characteristics AC Characteristics table: added tDPD and tRES
DDR AC Characteristics AC Characteristics table: added tDPD and tRES
Command Set Summary
S25FS-S Family Command Set (sorted by function) table: added DPD and RES
Added DPD section
Reset Commands Added DPD Commands section
Embedded Algorithm Performance Tables
Corrected ‘Program and Erase Performance’ table
Software Interface Reference S25FS-S Family Command Set (sorted by instruction)
table: added DPD and RES
*F 5043003 ANSI 12/09/2015 Updated to Cypress Template
Document Number: 002-00368 Rev. *K Page 151 of 153
S25FS128S
S25FS256S
*G 5074674 PIVI 02/02/2016 Global
Changed status from Preliminary to Final.
Replaced “Automotive” with “Industrial Plus” in all instances across the document.
*H 5180929 GJSW 03/18/2016 Updated Software Interface on page 48:
Updated Commands on page 78:
Updated Read Memory Array Commands on page 97:
Updated Quad I/O Read (QIOR EBh or 4QIOR ECh) on page 100:
Updated Figure 82 (fixed bit values).
Updated Figure 10.39 (fixed bit values).
*I 5445453 NFB 11/16/2016 Added ECC related information in all instances across the document.
Updated Program and Erase cycles and Retention to Features on page 1.
Updated Typical Program and Erase Rates on page 2.
Updated Typical Current Consumption (–40°C to +85°C) on page 2.
Added Thermal Resistance on page 23.
Added Automotive Grade to Temperature Ranges on page 24.
Updated FS-S DC Characteristics on page 27.
Updated AC Characteristics on page 33.
Added ECC Status Register (ECCSR) on page 66.
Added ECC Status Register Read (ECCRD 19h or 4EECRD 18h) on page 91.
Updated Read Any Register, QPI Mode, Command Sequence on page 95.
Updated Dual I/O Read Command Sequence (BBh) on page 100.
Updated Dual I/O Continuous Read Command Sequence (4-Byte Address [CR2V[7] = 1])
on page 100.
Updated figures in Quad I/O Read (QIOR EBh or 4QIOR ECh) on page 100.
Updated figures in DDR Quad I/O Read (EDh, EEh) on page 102.
Added Automatic ECC on page 104.
Updated Embedded Algorithm Performance Tables on page 124.
Updated Program and Erase Performance on page 124.
Updated Program or Erase Suspend AC Parameters on page 124.
Added Data Integrity on page 125.
Removed Software Interface Reference section.
Added Valid Combinations — Automotive Grade / AEC-Q100 on page 149.
Updated Copyright and Disclaimer.
*J 5705491 ECAO 04/21/2017 Replaced VDD with VCC in all instances across the document.
Updated Electrical Specifications on page 23:
Updated Operating Ranges on page 24:
Updated Temperature Ranges on page 24:
Added “Automotive AEC-Q100 Grade 1 (–40°C to +125°C)” Temperature Range related
information.
Updated Physical Interface on page 38:
Updated SOIC 16-Lead Package on page 38:
Updated SOIC 16 Physical Diagram on page 39:
Updated Figure 36.
Updated 8-Connector Packages on page 40:
Updated 8-Connector Physical Diagrams on page 41:
Updated Figure 39.
Updated Figure 40.
Updated Figure 41.
Updated FAB024 24-Ball BGA Package on page 44:
Updated Physical Diagram on page 45:
Updated Figure 43.
Updated FAC024 24-Ball BGA Package on page 46:
Updated Physical Diagram on page 47:
Updated Figure 45.
Document Title: S25FS128S/S25FS256S, 1.8 V, Serial Peripheral Interface with Multi-I/O, MirrorBit® Non-Volatile Flash
Document Number: 002-00368
Rev. ECN No. Orig. of
Change
Submission
Date Description of Change
Document Number: 002-00368 Rev. *K Page 152 of 153
S25FS128S
S25FS256S
*J (cont.) 5705491 ECAO 04/21/2017 Updated Ordering Part Number on page 147:
Added “Automotive AEC-Q100 Grade 1 (–40°C to +125°C)” Temperature Range related
information.
Updated Valid Combinations — Automotive Grade / AEC-Q100 on page 149:
Added “Automotive AEC-Q100 Grade 1 (–40°C to +125°C)” Temperature Range related
information.
Updated to new template.
*K 6125350 BWHA 04/03/2018 Added Section 4.6.2, Deep Power Down Mode on page 28
Document Title: S25FS128S/S25FS256S, 1.8 V, Serial Peripheral Interface with Multi-I/O, MirrorBit® Non-Volatile Flash
Document Number: 002-00368
Rev. ECN No. Orig. of
Change
Submission
Date Description of Change
Document Number: 002-00368 Rev. *K Revised April 11, 2018 Page 153 of 153
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including any software or firmware included or referenced in this document (“Software”), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
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S25FS128S
S25FS256S
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