IRF7413
VDSS = 30V
RDS(on) = 0.011Ω
HEXFET® Power MOSFET
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
lGeneration V Technology
lUltra Low On-Resistance
lN-Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
l100% RG Tested
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
02/14/07
S
y
mbol Parameter Units
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
c
PD @TA = 25°C Power Dissipation W
Linear Derating Factor mW/°C
EAS Single Pulse Avalanche Energency
d
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
TJ, TSTG Junction and Storage Temperature Range °C
S
y
mbol Parameter T
y
pMaxUnits
RθJL Junction-to-Drain Lead
h
––– 20
RθJA Junction-to-Ambient
gh
––– 50
A
V
Thermal Resistance Ratin
g
s
Absolute Maximum Ratin
g
s
°C/W
9.2
5.0
0.02
260
-55 to +150
58
2.5
Max
30
± 20
13
PD - 91330I
IRF7413
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Starting TJ = 25°C, L =9.8mH
RG = 25Ω, IAS =7.3A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board
Rθ is measured at TJ approximately 90°C
S
y
mbol Parameter Min T
y
pMaxUnits
V(BR)DSS Drain-to-Source Breakdown Volta
g
e 30 ––– ––– V
∆V(BR)DSS
/
∆TJ Breakdown Volta
g
e Temp. Coefficient ––– 0.034 ––– V/°C
––– ––– 0.011
––– ––– 0.018
VGS(th) Gate Threshold Volta
g
e1.0–––3.0V
g
fs Forward Transconductance 10 ––– ––– S
––– ––– 12
––– ––– 25
Gate-to-Source Forward Leaka
g
e––––––-100
Gate-to-Source Reverse Leaka
g
e––––––100
QgTotal Gate Char
g
e ––– 52 79
Qgs Gate-to-Source Char
g
e ––– 6.1 9.2
Qgd Gate-to-Drain ("Miller") Char
g
e ––– 16 23
RGGate Resistance 1.2 ––– 3.7
td(on) Turn-On Dela
y
Time ––– 8.6 –––
trRise Time ––– 50 –––
td(off) Turn-Off Dela
y
Time ––– 52 –––
tfFall Time ––– 46 –––
Ciss Input Capacitance ––– 1800 –––
Coss Output Capacitance ––– 680 –––
Crss Reverse Transfer Capacitance ––– 240 –––
S
y
mbol Parameter Min. T
y
p. Max. Units
Continuous Source Current
(Body Diode)
Pulsed Source Current
(
Bod
y
Diode
)
c
VSD Diode Forward Volta
g
e––––––1.0V
trr Reverse Recover
y
Time ––– 74 110 ns
Qrr Reverse Recover
y
Char
g
e ––– 200 300 nC
nC
ISM ––– ––– 58
IS
IDSS Drain-to-Source Leakage Current µA
IGSS
pF
3.1––––––
A
ƒ = 1.0MHz, See Fig. 5
RDS(on)
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
ΩVGS = 4.5V, ID = 3.7A
f
Static Drain-to-Source On-Resistance
ns
VGS = 10V, ID = 7.3A
f
MOSFET symbol
VDS = 10V, ID = 3.7A
ID = 7.3A
VDS = 24V
Conditions
RG = 2.0Ω, See Fig. 10
f
VGS = 0V
RG = 6.2 Ω
VDS = 25V
TJ = 25°C, IS = 7.3A, VGS = 0V
e
TJ = 25°C, IF = 7.3A
di/dt = 100A/µs
e
showing the
integral reverse
p-n junction diode.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratin
g
s and Characteristics
VGS = 10V, See Fig. 6 and 9
f
VDD = 15V
ID = 7.3A
VGS = -20V
VGS = 20V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
IRF7413
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 7.3A
D
IRF7413
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
400
800
1200
1600
2000
2400
2800
3200
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 102030405060
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 7.3A
V = 24V
V = 15V
D
DS
DS
1
10
100
0.4 1.2 2.0 2.8 3.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
IRF7413
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 9b. Gate Charge Test Circuit
IRF7413
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
o
ID
TOP
BOTTOM
3.3A
6.0A
7.3A
IRF7413
Fig 13. For N-Channel HEXFETS
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Peak Diode Recovery dv/dt Test Circuit
IRF7413
SO-8 Package Details
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONFORMS T O JEDEC OUTLINE MS -012AA.
NOT E S :
1. DIMENSIONING & T OLERANCING PE R AS ME Y14.5M-1994.
2. CONT ROLLING DIME NS ION: MILL IME T ER
3. DIME NS IONS ARE S HOWN IN MILL IME T E RS [INCHES].
5 DIMENS ION DOE S NOT INCLUDE MOL D PR OT R US IONS .
6 DIMENS ION DOE S NOT INCLUDE MOL D PR OT R US IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE L ENGT H OF LEAD F OR S OL DE RING T O
A S UBSTRAT E.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WE E K
E X AMP L E : T H I S I S AN IR F 7 10 1 (MOS F E T )
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = AS S E MB L Y S I T E CODE
Dimensions are shown in milimeters (inches)
IRF7413
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2007
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
