TIP2955 - Power Innovations

TIP2955

PNP SILICON POWER TRANSISTOR

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

●Designed for Complementary Use with the

TIP3055 Series

●90 W at 25°C Case Temperature

●15 A Continuous Collector Current

●Customer-Specified Selections Available

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base. MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies when the base-emitter resistance RBE = 100 Ω.

2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,

VBE(off) = 0, RS = 0.1 Ω, VCC = -10 V.

RATINGSYMBOLVALUEUNIT

Collector-base voltage (IE = 0)VCBO-100V

Collector-emitter voltage (IB = 0) (see Note 1)VCER-70V

Emitter-base voltageVEBO-7V

Continuous collector current IC-15A

Continuous base current IB-7A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot90W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot3.5W

Unclamped inductive load energy (see Note 4)½LIC262.5mJ

Operating junction temperature rangeTj-65 to +150°C

Storage temperature rangeTstg-65 to +150°C

Lead temperature 3.2 mm from case for 10 secondsTL260°C

TIP2955

PNP SILICON POWER TRANSISTOR

JANUARY 1972 - REVISED MARCH 1997

PRODUCT INFORMATION

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETERTEST CONDITIONSMINTYPMAXUNIT

V(BR)CEOCollector-emitter

breakdown voltageIC = -30 mAIB = 0(see Note 5)-60V

ICEOCollector cut-off

currentVCE= -30 VIB=0-0.7mA

ICEVVoltage between

base and emitterVCE = -100 V VBE = 1.5 V-5mA

IEBOEmitter cut-off

currentVEB = -7 VIC=0-5mA

hFEForward current

transfer ratioVCE = -4 V

VCE = -4 VIC= -4A

IC= -10A(see Notes 5 and 6)20

570

VCE(sat)Collector-emitter

saturation voltageIB = -0.4 A

IB = -3.3 AIC= -4A

IC= -10A(see Notes 5 and 6)-1.1

-3V

VBEBase-emitter

voltageVCE = -4 VIC= -4 A(see Notes 5 and 6)-1.8V

hfeSmall signal forward

current transfer ratioVCE = -10 VIC= -0.5Af = 1 kHz20

|hfe|Small signal forward

current transfer ratioVCE = -10 VIC= -0.5Af = 1 MHz3

thermal characteristics

PARAMETERMINTYPMAXUNIT

RθJCJunction to case thermal resistance1.39°C/W

RθJAJunction to free air thermal resistance35.7°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETERTEST CONDITIONS †MINTYPMAXUNIT

ton Turn-on timeIC = -6 A

VBE(off) = 4 VIB(on) = -0.6 A

RL = 5 ΩIB(off) = 0.6 A

tp = 20 µs, dc ≤ 2%0.4µs

toffTurn-off time0.7µs

JANUARY 1972 - REVISED MARCH 1997

TIP2955

PNP SILICON POWER TRANSISTOR

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

Figure 1.

MAXIMUM SAFE OPERATING REGIONS

Figure 2.

TYPICAL DC CURRENT GAIN

COLLECTOR CURRENT

IC - Collector Current - A

-0·01 -0·1 -1·0 -10

hFE - DC Current Gain

100

1000 TCS638AD

VCE = -4 V

TC = 25°C

tp = 300 µs, duty cycle < 2%

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

VCE - Collector-Emitter Voltage - V

-1·0 -10 -100 -1000

IC - Collector Current - A

-0·1

-1·0

-10

-100 SAS638AB

tp = 300 µs,

d = 0.1 = 10%

tp = 1 ms,

d = 0.1 = 10%

tp = 10 ms,

d = 0.1 = 10%

DC Operation

TIP2955

PNP SILICON POWER TRANSISTOR

JANUARY 1972 - REVISED MARCH 1997

PRODUCT INFORMATION

THERMAL INFORMATION

Figure 3.

MAXIMUM POWER DISSIPATION

CASE TEMPERATURE

TC - Case Temperature - °C

025 50 75 100 125 150

Ptot - Maximum Power Dissipation - W

100 TIS637AB

JANUARY 1972 - REVISED MARCH 1997

TIP2955

PNP SILICON POWER TRANSISTOR

PRODUCT INFORMATION

SOT-93

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

MECHANICAL DATA

SOT-93

ALL LINEAR DIMENSIONS IN MILLIMETERS

4,90

4,70

1,37

1,17

0,78

0,50

2,50 TYP.

15,2

14,7

12,2 MAX. 16,2 MAX.

18,0 TYP.

31,0 TYP.

1,30

1,10

11,1

10,8

4,1

4,0 3,95

4,15

1 2 3

NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW

TIP2955

PNP SILICON POWER TRANSISTOR

JANUARY 1972 - REVISED MARCH 1997

PRODUCT INFORMATION

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,

machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.