IOUT (mA)
VDO (mV)
0 30 60 90 120 150 180 210 240 270 300
0
20
40
60
80
100
120
140
160
180
D020
VOUT = 3.3 V
VOUT = 1.8 V
TLV733
IN
EN
OUT
GND
COUT
CIN
Optional
Optional ON
OFF
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TLV733P
SBVS235B OCTOBER 2014REVISED NOVEMBER 2015
TLV733P Capacitor-Free, 300-mA, Low-Dropout Regulator
in 1-mm × 1-mm SON Package
1
1 Features
1 Input Voltage Range: 1.4 V to 5.5 V
Stable Operation With or Without Capacitors
Foldback Overcurrent Protection
Packages:
1.0-mm × 1.0-mm X2SON (4)
SOT-23 (5)
Very Low Dropout: 125 mV at 300 mA (3.3 VOUT)
Accuracy: 1% typical, 1.4% maximum
Low IQ: 34 µA
Available in Fixed-Output Voltages:
1.0 V to 3.3 V
High PSRR: 50 dB at 1 kHz
Active Output Discharge
2 Applications
Tablets
Smartphones
Notebook and Desktop Computers
Portable Industrial and Consumer Products
WLAN and Other PC Add-On Cards
Camera Modules
3 Description
The TLV733 series of low-dropout linear regulators
(LDOs) are ultra-small, low quiescent current LDOs
that can source 300 mA with good line and load
transient performance. These devices provide a
typical accuracy of 1%.
The TLV733 series is designed with a modern
capacitor-free architecture to ensure stability without
an input or output capacitor. The removal of the
output capacitor allows for a very small solution size,
and can eliminate inrush current at startup. However,
the TLV733 series is also stable with ceramic output
capacitors if an output capacitor is necessary. The
TLV733 also provides foldback current control during
device power-up and enabling if an output capacitor
is used. This functionality is especially important in
battery-operated devices.
The TLV733 provides an active pull-down circuit to
quickly discharge output loads when disabled.
The TLV733 series is available in standard DBV
(SOT-23) and DQN (X2SON) packages.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
TLV733P SOT-23 (5) 2.90 mm × 1.60 mm
X2SON (4) 1.00 mm × 1.00 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
Typical Application Circuit Dropout Voltage vs Output Current
2
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 6
7 Detailed Description............................................ 12
7.1 Overview................................................................. 12
7.2 Functional Block Diagram....................................... 12
7.3 Feature Description................................................. 13
7.4 Device Functional Modes........................................ 14
8 Application and Implementation ........................ 15
8.1 Application Information............................................ 15
8.2 Typical Applications ............................................... 17
9 Power-Supply Recommendations...................... 19
10 Layout................................................................... 19
10.1 Layout Guidelines ................................................. 19
10.2 Layout Examples................................................... 19
11 Device and Documentation Support................. 20
11.1 Device Support .................................................... 20
11.2 Documentation Support ........................................ 20
11.3 Trademarks........................................................... 20
11.4 Electrostatic Discharge Caution............................ 20
11.5 Glossary................................................................ 20
12 Mechanical, Packaging, and Orderable
Information........................................................... 20
4 Revision History
Changes from Revision A (December 2014) to Revision B Page
Changed Low Dropout Feature bullet value from 122 mV to 125 mV to match value in Electrical Characteristics ............. 1
Changed VOUT labels on front page plot................................................................................................................................. 1
Changed min junction temperature value from –55 to –40 in Absolute Maximum Ratings table .......................................... 4
Changed max junction temperature value from 160 to 150 in Absolute Maximum Ratings table ........................................ 4
Changed max storage temperature value from 150 to 160 in Absolute Maximum Ratings table.......................................... 4
Added test condition to line regulation parameter in Electrical Characteristics table............................................................. 5
Changed unit for line regulation parameter from mV/V to mV ............................................................................................... 5
Added test condition to load regulation parameter in Electrical Characteristics table .......................................................... 5
Changes from Original (October 2014) to Revision A Page
Changed top page header information for data sheet to reflect device family instead of individual devices......................... 1
Changed Input Voltage Range Features bullet to be first in list............................................................................................. 1
Changed Typical Application Circuit on front page; corrected error in optional capacitor identification................................ 1
Changed format of I/O column contents and order of packages in Pin Functions table ....................................................... 3
Moved storage temperature range specification to Absolute Maximum Ratings table ......................................................... 4
Changed Handling Ratings table title to ESD Ratings, updated table format........................................................................ 4
Added new first row to the VDO parameter in the Electrical Characteristics table.................................................................. 5
Changed condition text for Figure 34 .................................................................................................................................. 16
Added Evaluation Module subsection ................................................................................................................................. 20
Deleted Related Links section ............................................................................................................................................. 20
OUT GND
IN EN
1 2
4 3
1
2
3
5
4
OUT
NC
IN
GND
EN
3
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5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
DQN Package
4-Pin 1-mm × 1-mm X2SON
Top View
Pin Functions
PIN
I/O DESCRIPTIONNAME
NO.
DQN DBV
EN 3 3 I Enable pin. Drive EN greater than 0.9 V to turn on the regulator.
Drive EN less than 0.35 V to put the LDO into shutdown mode.
GND 2 2 Ground pin
IN 4 1 I Input pin. A small capacitor is recommended from this pin to ground.
See the Input and Output Capacitor Selection section for more details.
NC N/A 4 No internal connection
OUT 1 5 O Regulated output voltage pin. For best transient response, use a small 1-μF
ceramic capacitor from this pin to ground.
See the Input and Output Capacitor Selection section for more details.
Thermal pad The thermal pad is electrically connected to the GND node.
Connect to the GND plane for improved thermal performance.
4
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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating junction temperature range (unless otherwise noted); all voltages are with respect to GND(1)
MIN MAX UNIT
Voltage
VIN –0.3 6.0
VVEN –0.3 VIN + 0.3
VOUT –0.3 3.6
Current IOUT Internally limited A
Output short-circuit duration Indefinite
Temperature Operating junction, TJ–40 150 °C
Storage, Tstg –65 160
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
6.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted) MIN NOM MAX UNIT
Input range, VIN 1.4 5.5 V
Output range, VOUT 1.0 3.3 V
Output current, IOUT 0 300 mA
Enable range, VEN 0 VIN V
Junction temperature, TJ–40 125 °C
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1) TLV733P
UNITDQN (X2SON) DBV (SOT-23)
4 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 218.6 228.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 164.8 151.5 °C/W
RθJB Junction-to-board thermal resistance 164.9 55.8 °C/W
ψJT Junction-to-top characterization parameter 5.6 31.4 °C/W
ψJB Junction-to-board characterization parameter 163.9 54.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 131.4 N/A °C/W
5
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(1) Dropout voltage for the TLV73310P is not valid at room temperature. The device engages undervoltage lockout (VIN < UVLOFALL) before
the dropout condition is met.
6.5 Electrical Characteristics
At operating temperature range (TJ= –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted). All typical values at TJ= 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage 1.4 5.5 V
DC output accuracy TJ= 25°C –1% 1%
–40°C TJ+125°C –1.4% 1.4%
UVLO Undervoltage lockout VIN rising 1.3 1.4 V
VIN falling 1.25
ΔVO(ΔVI) Line regulation ΔVI = VIN(nom) to VIN(nom) + 1 1 mV
ΔVO(ΔIO) Load regulation ΔIO = 1 mA to
300 mA DQN package 16 mV
DBV package 25
VDO Dropout voltage(1) VOUT = 0.98 ×
VOUT(nom),
IOUT = 300 mA
VOUT = 1.1 V, –40°C TJ85°C 460
mV
1.2 V VOUT < 1.5 V, –40°C TJ85°C 420
1.5 V VOUT < 1.8 V, –40°C TJ85°C 370
1.8 V VOUT < 2.5 V, –40°C TJ85°C 270
2.5 V VOUT < 3.3 V, –40°C TJ85°C 260
VOUT = 3.3 V, –40°C TJ85°C 125 220
1.2 V VOUT < 1.5 V, –40°C TJ125°C 450
1.5 V VOUT < 1.8 V, –40°C TJ125°C 400
1.8 V VOUT < 2.5 V, –40°C TJ125°C 300
2.5 V VOUT < 3.3 V, –40°C TJ125°C 290
VOUT = 3.3 V, –40°C TJ125°C 125 270
IGND Ground pin current IOUT = 0 mA 34 60 µA
ISHDN Shutdown current VEN 0.35 V, 2.0 V VIN 5.5 V, TJ= 25°C 0.1 1 µA
PSRR Power-supply
rejection ratio VOUT = 1.8 V,
IOUT = 300 mA
f = 100 Hz 68 dBf = 10 kHz 35
f = 100 kHz 28
VnOutput noise voltage BW = 10 Hz to 100 kHz, VOUT = 1.8 V, IOUT = 10 mA 120 µVRMS
VEN(HI) EN pin high voltage
(enabled) 0.9 0.63 V
VEN(LO) EN pin low voltage
(disabled) 0.52 0.35 V
IEN EN pin current VEN = 5.5 V 0.01 µA
tSTR Startup time
Time from EN assertion to 98% × VOUT(nom), VOUT = 1.0
V, IOUT = 0 mA 250 µs
Time from EN assertion to 98% × VOUT(nom), VOUT = 3.3
V, IOUT = 0 mA 800
Pull-down resistor VIN = 2.3 V 120 Ω
ILIM Output current limit 360 mA
IOS Short-circuit current
limit VOUT shorted to GND, VOUT = 1.0 V 150 mA
VOUT shorted to GND, VOUT = 3.3 V 170
Tsd Thermal shutdown Shutdown, temperature increasing 160 °C
Reset, temperature decreasing 140
Current (mA)
VOUT (V)
0 50 100 150 200 250 300
3.264
3.272
3.28
3.288
3.296
3.304
3.312
3.32
D007
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
Current (mA)
VOUT (V)
0 50 100 150 200 250 300
1.76
1.768
1.776
1.784
1.792
1.8
1.808
1.816
D002
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
Current (mA)
VOUT (V)
0 50 100 150 200 250 300
1.779
1.782
1.785
1.788
1.791
1.794
1.797
1.8
D006
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
Current (mA)
VOUT (V)
0 50 100 150 200 250 300
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
D001
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
Current (mA)
VOUT (V)
0 50 100 150 200 250 300
0.976
0.98
0.984
0.988
0.992
0.996
1
1.004
D005
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
6
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6.6 Typical Characteristics
at operating temperature range (TJ= –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
TLV73310PDBV
Figure 1. 1.0-V Load Regulation vs IOUT and Temperature
TLV73310PDQN
Figure 2. 1.0-V Load Regulation vs IOUT and Temperature
TLV73318PDBV
Figure 3. 1.8-V Load Regulation vs IOand Temperature
TLV73318PDQN
Figure 4. 1.8-V Load Regulation vs IOUT and Temperature
TLV73333PDBV
Figure 5. 3.3-V Load Regulation vs IOUT and Temperature
TLV73333PDQN
Figure 6. 3.3-V Load Regulation vs IOUT and Temperature
Current (mA)
VDO (mV)
0 30 60 90 120 150 180 210 240 270 300
0
50
100
150
200
250
300
D009
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
Current (mA)
VDO (mV)
0 30 60 90 120 150 180 210 240 270 300
0
50
100
150
200
250
300
D011
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
Current (mA)
VDO (mV)
0 30 60 90 120 150 180 210 240 270 300
0
25
50
75
100
125
150
175
200
225
250
275
D008
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
Current (mA)
VDO (mV)
0 30 60 90 120 150 180 210 240 270 300
0
50
100
150
200
250
300
D010
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
Current (mA)
VDO (mV)
0 30 60 90 120 150 180 210 240 270 300
50
100
150
200
250
300
350
400
D024
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
Current (mA)
VDO (mV)
0 30 60 90 120 150 180 210 240 270 300
60
90
120
150
180
210
240
270
300
330
360
390
D025
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
7
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Typical Characteristics (continued)
at operating temperature range (TJ= –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
TLV73312PDBV
Figure 7. 1.2-V Dropout Voltage vs IOUT and Temperature
TLV73312PDQN
Figure 8. 1.2-V Dropout Voltage vs IOUT and Temperature
TLV73318PDBV
Figure 9. 1.8-V Dropout Voltage vs IOUT and Temperature
TLV73318PDQN
Figure 10. 1.8-V Dropout Voltage vs IOUT and Temperature
TLV73333PDBV
Figure 11. 3.3-V Dropout Voltage vs IOUT and Temperature
TLV73333PDQN
Figure 12. 3.3-V Dropout Voltage vs IOUT and Temperature
TJ (qC)
Enable Threshold (V)
-40 -20 0 20 40 60 80 100 120 140
0.425
0.45
0.475
0.5
0.525
0.55
0.575
0.6
0.625
0.65
0.675
D014
VEN(LO)
VEN(HI)
Foldback Current Limit (mA)
VOUT (V)
150 200 250 300 350 400 450 500 550 600 650 700
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
D023
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
VIN (V)
IGND (PA)
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
8
16
24
32
40
D013
TJ = 25 qC
VIN (V)
ISHDN (PA)
0 1 2 3 4 5 6
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
D015
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
IOUT (mA)
IGND (PA)
0 30 60 90 120 150 180 210 240 270 300
25
30
35
40
45
50
55
60
65
70
D012
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
8
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Typical Characteristics (continued)
at operating temperature range (TJ= –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
TLV73318PDBV
Figure 13. 1.8-V Regulation vs VIN (Line Regulation) and
Temperature Figure 14. Ground Pin Current vs IOUT and Temperature
Figure 15. Ground Pin Current vs VIN
IOUT = 0 mA
Figure 16. Shutdown Current vs VIN and Temperature
Figure 17. Enable Threshold vs Temperature
TLV73310PDBV
Figure 18. 1.0-V Foldback Current Limit vs
IOUT and Temperature
VOUT (1 V/div,
AC Coupled)
Time (20 µs/div)
VIN (2 V/div)
VOUT (1 V/div,
AC Coupled)
Time (20 µs/div)
VIN (2 V/div)
Frequency (Hz)
PSRR (dB)
10 20 50 100 1000 10000 100000 1000000
0
20
40
60
80
D017
No Output Capacitor
1 PF Output Capacitor
Frequency (Hz)
Noise Density (PV/Hz)
10 20 50 100 1000 10000 100000 1000000
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
D016
VOUT = 1 V
VOUT = 1.8 V
VOUT = 3.3 V
Foldback Current Limit (mA)
VOUT (V)
150 200 250 300 350 400 450 500
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
D021
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
Foldback Current Limit (mA)
VOUT (V)
150 200 250 300 350 400 450 500
0
0.5
1
1.5
2
2.5
3
3.5
D022
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
9
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Typical Characteristics (continued)
at operating temperature range (TJ= –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
TLV73318PDBV
Figure 19. 1.8-V Foldback Current Limit vs
IOUT and Temperature
TLV73333PDBV
Figure 20. 3.3-V Foldback Current Limit vs
IOUT and Temperature
TLV73318PDQN, IOUT = 300 mA
Figure 21. Power-Supply Rejection Ratio vs Frequency
IOUT = 300 mA
Figure 22. Output Spectral Noise Density
TLV73318PDBV, IOUT = 10 mA, 1-µF output capacitor
Figure 23. Line Transient
TLV73318PDBV, IOUT = 300 mA, 1-µF output capacitor
Figure 24. Line Transient
VOUT (1 V/div)
Time (100 µs/div)
VIN (1 V/div)
ILOAD (200 mA/div)
Time (100 µs/div)
VOUT (500 mV/div)
VEN (500 mV/div)
Time (50 µs/div)
VOUT (100 mV/div,
AC coupled)
ILOAD (200 mA/div)
ILOAD (100 mA/div)
VOUT (100 mV/div,
AC Coupled)
Time (20 µs/div)
ILOAD (100 mA/div)
VOUT (200 mV/div,
AC Coupled)
Time (20 µs/div)
ILOAD (100 mA/div)
VOUT (200 mV/div,
AC Coupled)
Time (20 µs/div)
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Typical Characteristics (continued)
at operating temperature range (TJ= –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
TLV73310PDBV, VIN = 2.0 V, 1-µF output capacitor, output
current slew rate = 0.25 A/µs
Figure 25. 1.0-V, 50-mA to 300-mA Load Transient
TLV73310PDBV, VIN = 2.0 V, no output capacitor, output current
slew rate = 0.25 A/µs
Figure 26. 1.0 V, 50-mA to 300-mA Load Transient
TLV73333PDBV, VIN = 3.8 V,1-µF output capacitor, output current
slew rate = 0.25 A/µs
Figure 27. 3.3 V, 50-mA to 300-mA Load Transient
TLV73333PDBV, VIN = 3.8 V, no output capacitor, output current
slew rate = 0.25 A/µs
Figure 28. 3.3 V, 50-mA to 300-mA Load Transient
TLV73318PDBV, RL= 6.2 Ω, VEN = VIN, 1-µF output capacitor
Figure 29. VIN Power-Up and Power-Down
TLV73318PDBV, RL= 6.2 Ω, 1-µF output capacitor
Figure 30. Startup with EN
Time (100 µs/div)
VOUT (500 mV/div)
VEN (500 mV/div)
Time (100 µs/div)
ILOAD (200 mA/div)
VOUT (500 mV/div)
11
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Typical Characteristics (continued)
at operating temperature range (TJ= –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
TLV73318PDBV, IOUT = 300 mA, 1-µF output capacitor
Figure 31. Shutdown Response with Enable
TLV73318PDBV, 1-µF output capacitor
Figure 32. Foldback Current Limit Response
Current
Limit
UVLO
Bandgap
IN
EN
OUT
Logic
GND
TLV733
120 W
Thermal
Shutdown
12
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7 Detailed Description
7.1 Overview
The TLV733 belongs to a new family of next-generation, low-dropout regulators (LDOs). These devices consume
low quiescent current and deliver excellent line and load transient performance. These characteristics, combined
with low noise, good PSRR with low dropout voltage, make this family of devices ideal for portable consumer
applications.
This family of regulators offers foldback current limit, shutdown, and thermal protection. The operating junction
temperature for this family of devices is –40°C to 125°C.
7.2 Functional Block Diagram
t=120·RL
120+RL
·COUT
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7.3 Feature Description
7.3.1 Undervoltage Lockout (UVLO)
The TLV733 uses an undervoltage lockout (UVLO) circuit that disables the output until the input voltage is
greater than the rising UVLO voltage, UVLORISE. This circuit ensures that the device does not exhibit any
unpredictable behavior when the supply voltage is lower than the operational range of the internal circuitry.
During UVLO disable, the output is connected to ground with a 120-Ωpulldown resistor.
7.3.2 Shutdown
The enable pin (EN) is active high. Enable the device by forcing the EN pin to exceed VEN(HI) (0.9 V, minimum).
Turn off the device by forcing the EN pin to drop below 0.35 V. If shutdown capability is not required, connect EN
to IN.
The TLV733 has an internal pulldown MOSFET that connects a 120-Ωresistor to ground when the device is
disabled. The discharge time after disabling depends on the output capacitance (COUT) and the load resistance
(RL) in parallel with the 120-Ωpulldown resistor. The time constant is calculated in Equation 1:
(1)
7.3.3 Internal Foldback Current Limit
The TLV733 has an internal foldback current limit that protects the regulator during fault conditions. The current
allowed through the device is reduced as the output voltage falls. When the output is shorted, the LDO supplies a
typical current of 150 mA. The output voltage is not regulated when the device is in current limit. In this condition,
the output voltage is the product of the regulated current and the load resistance. When the device output is
shorted, the PMOS pass transistor dissipates power [(VIN VOUT) × IOS] until thermal shutdown is triggered and
the device turns off. After the device cools down, the internal thermal shutdown circuit turns the device back on.
If the fault condition continues, the device cycles between current limit and thermal shutdown. See the Thermal
Information table for more details.
The foldback current-limit circuit limits the current allowed through the device to current levels lower than the
minimum current limit at nominal VOUT current limit (ILIM) during startup. See Figure 18 to Figure 20 for typical
foldback current limit values. If the output is loaded by a constant-current load during startup, or if the output
voltage is negative when the device is enabled, then the load current demanded by the load may exceed the
foldback current limit and the device may not rise to the full output voltage. For constant-current loads, disable
the output load until the TLV733 has fully risen to its nominal output voltage.
The TLV733 PMOS pass element has an intrinsic body diode that conducts current when the voltage at the OUT
pin exceeds the voltage at the IN pin. Do not force the output voltage to exceed the input voltage because
excessively high current may flow through the body diode.
7.3.4 Thermal Shutdown
Thermal shutdown protection disables the output when the junction temperature rises to approximately 160°C.
Disabling the device eliminates the power dissipated by the device, allowing the device to cool. When the
junction temperature cools to approximately 140°C, the output circuitry is again enabled. Depending on power
dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off.
This cycling limits regulator dissipation, protecting it from damage as a result of overheating.
Activating the thermal shutdown feature usually indicates excessive power dissipation as a result of the product
of the (VIN –VOUT) voltage and the load current. For reliable operation, limit junction temperature to 125°C
maximum. To estimate the margin of safety in a complete design, increase the ambient temperature until the
thermal protection is triggered; use worst-case loads and signal conditions.
The TLV733 internal protection circuitry protects against overload conditions but is not intended to be activated in
normal operation. Continuously running the TLV733 into thermal shutdown degrades device reliability.
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7.4 Device Functional Modes
7.4.1 Normal Operation
The device regulates to the nominal output voltage under the following conditions:
The input voltage has previously exceeded the UVLO rising voltage and has not decreased below the UVLO
falling threshold.
The input voltage is greater than the nominal output voltage added to the dropout voltage.
The enable voltage has previously exceeded the enable rising threshold voltage and not decreased below the
enable falling threshold.
The output current is less than the current limit.
The device junction temperature is less than the thermal shutdown temperature.
7.4.2 Dropout Operation
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other
conditions are met for normal operation, the device operates in dropout mode. In this condition, the output
voltage is the same the input voltage minus the dropout voltage. The transient performance of the device is
significantly degraded because the pass device is in a triode state and no longer controls the current through the
LDO. Line or load transients in dropout may result in large output voltage deviations.
7.4.3 Disabled
The device is disabled under the following conditions:
The input voltage is less than the UVLO falling voltage, or has not yet exceeded the UVLO rising threshold.
The enable voltage is less than the enable falling threshold voltage or has not yet exceeded the enable rising
threshold.
The device junction temperature is greater than the thermal shutdown temperature.
When the device is disabled, the active pulldown resistor discharges the output.
Table 1 shows the conditions that lead to the different modes of operation.
Table 1. Device Functional Mode Comparison
OPERATING MODE PARAMETER
VIN VEN IOUT TJ
Normal mode VIN > VOUT(nom) + VDO
and VIN > UVLORISE VEN > VEN(HI) IOUT < ILIM TJ< 160°C
Dropout mode UVLORISE < VIN < VOUT(nom) + VDO VEN > VEN(HI) IOUT < ILIM TJ< 160°C
Disabled mode
(any true condition
disables the device) VIN < UVLOFALL VEN < VEN(LO) TJ> 160°C
Output Load Transient Slew Rate (A/Ps)
Peak Output Voltage Change (%VOUT)
0.01 0.02 0.03 0.050.07 0.1 0.2 0.3 0.5 0.7 1
0
5
10
15
20
25
30
35
D027
1 PF COUT
COUT Removed
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8 Application and Implementation
8.1 Application Information
8.1.1 Input and Output Capacitor Selection
The TLV733 uses an advanced internal control loop to obtain stable operation both with and without the use of
input or output capacitors. Dynamic performance is improved with the use of an output capacitor, and may be
improved with an input capacitor. An output capacitance of 0.1 μF or larger generally provides good dynamic
response. Use X5R- and X7R-type ceramic capacitors because these capacitors have minimal variation in value
and equivalent series resistance (ESR) over temperature.
Although an input capacitor is not required for stability, increased output impedance from the input supply may
compromise the performance of the TLV733. Good analog design practice is to connect a 0.1-µF to 1-µF
capacitor from IN to GND. This capacitor counteracts reactive input sources and improves transient response,
input ripple, and PSRR. Use an input capacitor if the source impedance is greater than 0.5 Ω. Use a higher-value
capacitor if large, fast, rise-time load transients are anticipated, or if the device is located several inches from the
input power source.
Figure 33 shows the transient performance improvements with an external 1-µF capacitor on the output versus
no output capacitor. The data in this figure are taken with an increasing load step from 50 mA to 300 mA, and the
peak output voltage deviation (load transient response) is measured. For low output current slew rates,
(< 0.1 A/µs), the transient performance of the device is similar with or without an output capacitor. As the current
slew rate is increased, the peak voltage deviation is significantly increased. For loads that exhibit fast current
slew rates above 0.1 A/µs, use an output capacitor. For best performance, the maximum recommended output
capacitance is 100 µF.
TLV73333PDBV, output current stepped from 50 mA to 300 mA, output voltage change measured at positive dI/dt
Figure 33. Output Voltage Deviation vs Load Step Slew Rate
Some applications benefit from the removal of the output capacitor. In addition to space and cost savings, the
removal of the output capacitor lowers inrush current as a result of eliminating the required current flow into the
output capacitor upon startup. In these cases, take care to ensure that the load is tolerant of the additional output
voltage deviations.
Power Dissipation (W)
Maximum Ambient Temperature (qC)
0 0.03 0.06 0.09 0.12 0.15 0.18 0.21 0.24 0.27 0.3
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
D028
TLV733 DQN, High-K Layout
TLV733 DBV, High-K Layout
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Application Information (continued)
8.1.2 Dropout Voltage
The TLV733 uses a PMOS pass transistor to achieve low dropout. When (VIN VOUT) is less than the dropout
voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output resistance is the
RDS(ON) of the PMOS pass element. VDO scales approximately with output current because the PMOS device
behaves like a resistor in dropout mode. As with any linear regulator, PSRR and transient response degrade as
(VIN VOUT) approaches dropout operation. See Figure 7 to Figure 12 for typical dropout values.
8.1.3 Power Dissipation
The ability to remove heat from the die is different for each package type, presenting different considerations in
the printed circuit board (PCB) layout. The PCB area around the device that is free of other components moves
the heat from the device to ambient air. Performance data for JEDEC high-K boards are given in the Thermal
Information table. Using heavier copper increases the effectiveness in removing heat from the device. The
addition of plated through-holes to heat-dissipating layers also improves heatsink effectiveness.
Power dissipation (PD) depends on input voltage and load conditions. PDis equal to the product of the output
current and voltage drop across the output pass element, as shown in Equation 2.
PD= (VIN VOUT)×IOUT (2)
Figure 34 shows the maximum ambient temperature versus the power dissipation of the TLV733 in the DQN
package. This figure assumes the device is soldered on JEDEC standard high-K layout with no airflow over the
board. Actual board thermal impedances vary widely. If the application requires high power dissipation, having a
thorough understanding of the board temperature and thermal impedances is helpful to make sure the TLV733
does not operate continuously above a junction temperature of 125°C.
TLV733, high-K layout
Figure 34. Maximum Ambient Temperature vs Device Power Dissipation
VOUT (500 mV/div)
Time (50 µs/div)
VIN (500 mV/div)
IOUT (100 mA/div)
IN OUT
EN GND
OFF
ON
TLV733 COUT
1 µF
DC-DC
Converter Load
VOUT
1.5 V
CIN
1 µF
VOUT
1.8 V
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8.2 Typical Applications
8.2.1 DC-DC Converter Post Regulation
Figure 35. DC-DC Converter Post Regulation
8.2.1.1 Design Requirements
Table 2. Design Parameters
PARAMETER DESIGN REQUIREMENT
Input voltage 1.8 V, ±5%
Output voltage 1.5 V, ±1%
Output current 200-mA dc, 300-mA peak
Output voltage transient deviation < 10%, 1-A/µs load step from 50 mA to 200 mA
Maximum ambient temperature 85°C
8.2.1.2 Design Considerations
Input and output capacitors are required to achieve the output voltage transient requirements. Capacitance
values of 1 µF are selected to give the maximum output capacitance in a small, low-cost package.
Figure 7 shows the 1.2-V option dropout voltage. Given that dropout voltages are higher for lower output-voltage
options, and given that the 1.2-V option dropout voltage is typically less than 300 mV at 125°C, then the 1.5-V
option dropout voltage is typically less than 300 mV at 125°C.
Verify that the maximum junction temperature is not exceeded by referring to Figure 34.
8.2.1.3 Application Curve
Figure 36. 1.8-V to 1.5-V Regulation at 300 mA
VOUT (500 mV/div)
Time (50 µs/div)
VIN (1 V/div)
IIN (100 mA/div)
Load
VBAT
IN OUT
EN GND
TLV733
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8.2.2 Capacitor-Free Operation from Battery Input Supply
Figure 37. Capacitor-Free Operation from Battery Input Supply
8.2.2.1 Design Requirements
Table 3. Design Parameters
PARAMETER DESIGN REQUIREMENT
Input voltage 3.0 V to 1.8 V (two 1.5-V batteries)
Output voltage 1.0 V, ±1%
Input current 200 mA, maximum
Output load 100-mA dc
Maximum ambient temperature 70°C
8.2.2.2 Design Considerations
An input capacitor is not required for this design because of the low impedance connection directly to the battery.
No output capacitor allows for the minimal possible inrush current during startup, ensuring the 200-mA maximum
input current is not exceeded.
Verify that the maximum junction temperature is not exceeded by referring to Figure 34.
8.2.2.3 Application Curve
Figure 38. No Inrush Startup, 3.0-V to 1.0-V Regulation
COUT*
VOUT
VIN
GND PLANE
CIN*
Represents via used for
application specific connections
*not required
1
2
34
5
COUT*
VOUT VIN
GND PLANE
CIN*
TLV733
Represents via used for
application specific connections
*not required
1
23
4
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9 Power-Supply Recommendations
Connect a low output impedance power supply directly to the IN pin of the TLV733. Inductive impedances
between the input supply and the IN pin can create significant voltage excursions at the IN pin during startup or
load transient events. If inductive impedances are unavoidable, use an input capacitor.
10 Layout
10.1 Layout Guidelines
Place input and output capacitors as close to the device as possible.
Use copper planes for device connections, in order to optimize thermal performance.
Place thermal vias around the device to distribute the heat.
Do not place a thermal via directly beneath the thermal pad of the DQN package. A via can wick solder or
solder paste away from the thermal pad joint during the soldering process, leading to a compromised solder
joint on the thermal pad.
10.2 Layout Examples
Figure 39. Layout Example for the DQN package
Figure 40. Layout Example for the DBV Package
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(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the
device product folder on www.ti.com.
(2) Output voltages from 1.0 V to 3.3 V in 50-mV increments are available. Contact the factory for details and availability.
11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 Evaluation Module
An evaluation module (EVM) is available to assist in the initial circuit performance evaluation using the TLV733.
The TLV73312PEVM-643 evaluation module (and related user guide) can be requested at the Texas Instruments
website through the product folders or purchased directly from the TI eStore.
11.1.2 Device Nomenclature
Table 4. Device Nomenclature(1)(2)
PRODUCT VOUT
TLV733xx(x)Pyyyz
xx(x) is the nominal output voltage. For output voltages with a resolution of 100 mV, two digits are used
in the ordering number; otherwise, three digits are used (for example, 28 = 2.8 V; 125 = 1.25 V).
Pindicates an active output discharge feature. All members of the TLV733 family will actively discharge
the output when the device is disabled.
yyy is the package designator.
zis the package quantity. R is for reel (3000 pieces), T is for tape (250 pieces).
11.2 Documentation Support
11.2.1 Related Documentation
TLV73312PDQN-643 Evaluation Module User Guide, SBVU024
11.3 Trademarks
All trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.5 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
PACKAGE OUTLINE
DQN0004A X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
4215302/D 06/2016
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
4. Features may not exist. Recommend use of pin 1 marking on top of package for orientation purposes.
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EXAMPLE BOARD LAYOUT
DQN0004A X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
4215302/D 06/2016
NOTES: (continued)
5. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271) .
6. If any vias are implemented, it is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
DQN0004A X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
4215302/D 06/2016
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TLV73310PDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCCQ
TLV73310PDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCCQ
TLV73310PDQNR ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FG
TLV73310PDQNT ACTIVE X2SON DQN 4 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FG
TLV73311PDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 ZBLW
TLV73311PDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 ZBLW
TLV73311PDQNR ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 GR
TLV73311PDQNT ACTIVE X2SON DQN 4 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 GR
TLV73312PDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCDQ
TLV73312PDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCDQ
TLV73312PDQNR ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FI
TLV73312PDQNR3 ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FI
TLV73312PDQNT ACTIVE X2SON DQN 4 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FI
TLV73315PDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCFQ
TLV73315PDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCFQ
TLV73315PDQNR ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FJ
TLV73315PDQNR3 ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FJ
PACKAGE OPTION ADDENDUM
www.ti.com 9-Oct-2016
Addendum-Page 2
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TLV73315PDQNT ACTIVE X2SON DQN 4 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FJ
TLV73318PDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCGQ
TLV73318PDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCGQ
TLV73318PDQNR ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FK
TLV73318PDQNR3 ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FK
TLV73318PDQNT ACTIVE X2SON DQN 4 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FK
TLV73325PDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCHQ
TLV73325PDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCHQ
TLV73325PDQNR ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FL
TLV73325PDQNT ACTIVE X2SON DQN 4 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FL
TLV733285PDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 ZDRW
TLV733285PDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 ZDRW
TLV733285PDQNR ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 GZ
TLV733285PDQNT ACTIVE X2SON DQN 4 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 GZ
TLV73328PDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 ZDQW
TLV73328PDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 ZDQW
TLV73328PDQNR ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 GY
TLV73328PDQNR3 ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 GY
PACKAGE OPTION ADDENDUM
www.ti.com 9-Oct-2016
Addendum-Page 3
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TLV73328PDQNT ACTIVE X2SON DQN 4 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 GY
TLV73330PDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 ZDMW
TLV73330PDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 ZDMW
TLV73330PDQNR ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 GW
TLV73330PDQNT ACTIVE X2SON DQN 4 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 GW
TLV73333PDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCIQ
TLV73333PDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VCIQ
TLV73333PDQNR ACTIVE X2SON DQN 4 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FM
TLV73333PDQNT ACTIVE X2SON DQN 4 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 FM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
PACKAGE OPTION ADDENDUM
www.ti.com 9-Oct-2016
Addendum-Page 4
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TLV733P :
Automotive: TLV733P-Q1
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TLV73310PDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73310PDBVT SOT-23 DBV 5 250 178.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
TLV73310PDQNR X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73310PDQNT X2SON DQN 4 250 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73311PDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73311PDBVT SOT-23 DBV 5 250 178.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
TLV73311PDQNR X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73311PDQNT X2SON DQN 4 250 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73312PDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73312PDBVT SOT-23 DBV 5 250 178.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
TLV73312PDQNR X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73312PDQNR3 X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q3
TLV73312PDQNT X2SON DQN 4 250 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73315PDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73315PDBVT SOT-23 DBV 5 250 178.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
TLV73315PDQNR X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73315PDQNR3 X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q3
TLV73315PDQNT X2SON DQN 4 250 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
PACKAGE MATERIALS INFORMATION
www.ti.com 3-May-2017
Pack Materials-Page 1
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TLV73318PDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73318PDBVT SOT-23 DBV 5 250 178.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
TLV73318PDQNR X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73318PDQNR3 X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q3
TLV73318PDQNT X2SON DQN 4 250 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73325PDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73325PDBVT SOT-23 DBV 5 250 178.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
TLV73325PDQNR X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73325PDQNT X2SON DQN 4 250 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV733285PDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV733285PDBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV733285PDQNR X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV733285PDQNT X2SON DQN 4 250 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73328PDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73328PDBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73328PDQNR X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73328PDQNR3 X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q3
TLV73328PDQNT X2SON DQN 4 250 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73330PDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73330PDBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73330PDQNR X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73330PDQNT X2SON DQN 4 250 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73333PDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV73333PDBVT SOT-23 DBV 5 250 178.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
TLV73333PDQNR X2SON DQN 4 3000 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
TLV73333PDQNT X2SON DQN 4 250 180.0 9.5 1.16 1.16 0.5 4.0 8.0 Q2
PACKAGE MATERIALS INFORMATION
www.ti.com 3-May-2017
Pack Materials-Page 2
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TLV73310PDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV73310PDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
TLV73310PDQNR X2SON DQN 4 3000 184.0 184.0 19.0
TLV73310PDQNT X2SON DQN 4 250 184.0 184.0 19.0
TLV73311PDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV73311PDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
TLV73311PDQNR X2SON DQN 4 3000 184.0 184.0 19.0
TLV73311PDQNT X2SON DQN 4 250 184.0 184.0 19.0
TLV73312PDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV73312PDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
TLV73312PDQNR X2SON DQN 4 3000 184.0 184.0 19.0
TLV73312PDQNR3 X2SON DQN 4 3000 184.0 184.0 19.0
TLV73312PDQNT X2SON DQN 4 250 184.0 184.0 19.0
TLV73315PDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV73315PDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
TLV73315PDQNR X2SON DQN 4 3000 184.0 184.0 19.0
TLV73315PDQNR3 X2SON DQN 4 3000 184.0 184.0 19.0
TLV73315PDQNT X2SON DQN 4 250 184.0 184.0 19.0
TLV73318PDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV73318PDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
PACKAGE MATERIALS INFORMATION
www.ti.com 3-May-2017
Pack Materials-Page 3
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TLV73318PDQNR X2SON DQN 4 3000 184.0 184.0 19.0
TLV73318PDQNR3 X2SON DQN 4 3000 184.0 184.0 19.0
TLV73318PDQNT X2SON DQN 4 250 184.0 184.0 19.0
TLV73325PDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV73325PDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
TLV73325PDQNR X2SON DQN 4 3000 184.0 184.0 19.0
TLV73325PDQNT X2SON DQN 4 250 184.0 184.0 19.0
TLV733285PDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV733285PDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
TLV733285PDQNR X2SON DQN 4 3000 184.0 184.0 19.0
TLV733285PDQNT X2SON DQN 4 250 184.0 184.0 19.0
TLV73328PDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV73328PDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
TLV73328PDQNR X2SON DQN 4 3000 184.0 184.0 19.0
TLV73328PDQNR3 X2SON DQN 4 3000 184.0 184.0 19.0
TLV73328PDQNT X2SON DQN 4 250 184.0 184.0 19.0
TLV73330PDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV73330PDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
TLV73330PDQNR X2SON DQN 4 3000 184.0 184.0 19.0
TLV73330PDQNT X2SON DQN 4 250 184.0 184.0 19.0
TLV73333PDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
TLV73333PDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
TLV73333PDQNR X2SON DQN 4 3000 184.0 184.0 19.0
TLV73333PDQNT X2SON DQN 4 250 184.0 184.0 19.0
PACKAGE MATERIALS INFORMATION
www.ti.com 3-May-2017
Pack Materials-Page 4
www.ti.com
PACKAGE OUTLINE
C
TYP
0.22
0.08
0.25
3.0
2.6
2X 0.95
1.9
1.45 MAX
TYP
0.15
0.00
5X 0.5
0.3
TYP
0.6
0.3
TYP
8
0
1.9
A
3.05
2.75
B
1.75
1.45
(1.1)
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
4214839/C 04/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
0.2 C A B
1
34
5
2
INDEX AREA
PIN 1
GAGE PLANE
SEATING PLANE
0.1 C
SCALE 4.000
www.ti.com
EXAMPLE BOARD LAYOUT
0.07 MAX
ARROUND 0.07 MIN
ARROUND
5X (1.1)
5X (0.6)
(2.6)
(1.9)
2X (0.95)
(R0.05) TYP
4214839/C 04/2017
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
PKG
1
34
5
2
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED METAL
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
EXPOSED METAL
www.ti.com
EXAMPLE STENCIL DESIGN
(2.6)
(1.9)
2X(0.95)
5X (1.1)
5X (0.6)
(R0.05) TYP
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
4214839/C 04/2017
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
SYMM
PKG
1
34
5
2
www.ti.com
PACKAGE OUTLINE
C
TYP
0.22
0.08
0.25
3.0
2.6
2X 0.95
1.9
1.45 MAX
TYP
0.15
0.00
5X 0.5
0.3
TYP
0.6
0.3
TYP
8
0
1.9
A
3.05
2.75
B
1.75
1.45
(1.1)
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
4214839/C 04/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
0.2 C A B
1
34
5
2
INDEX AREA
PIN 1
GAGE PLANE
SEATING PLANE
0.1 C
SCALE 4.000
www.ti.com
EXAMPLE BOARD LAYOUT
0.07 MAX
ARROUND 0.07 MIN
ARROUND
5X (1.1)
5X (0.6)
(2.6)
(1.9)
2X (0.95)
(R0.05) TYP
4214839/C 04/2017
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
PKG
1
34
5
2
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED METAL
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
EXPOSED METAL
www.ti.com
EXAMPLE STENCIL DESIGN
(2.6)
(1.9)
2X(0.95)
5X (1.1)
5X (0.6)
(R0.05) TYP
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
4214839/C 04/2017
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
SYMM
PKG
1
34
5
2
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Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Texas Instruments:
TLV73310PDQNT TLV73310PDBVT TLV73315PDBVT TLV73315PDQNT TLV73325PDBVT TLV73325PDQNT
TLV73333PDQNT TLV73333PDBVT TLV73312PDBVT TLV73312PDQNT TLV73318PDBVT TLV73333PDQNR
TLV73315PDQNR TLV73312PDBVR TLV73318PDQNT TLV73318PDQNR TLV73318PDBVR TLV73310PDBVR
TLV73315PDBVR TLV73325PDBVR TLV73310PDQNR TLV73333PDBVR TLV73325PDQNR TLV73312PDQNR
TLV73311PDQNT TLV73311PDBVT TLV73311PDQNR TLV73311PDBVR TLV73330PDBVT TLV733285PDBVT
TLV73328PDBVT TLV73328PDQNR TLV73330PDBVR TLV733285PDQNR TLV73330PDQNT TLV73328PDBVR
TLV733285PDQNT TLV73330PDQNR TLV733285PDBVR TLV73328PDQNT TLV73312PDQNR3
TLV73315PDQNR3 TLV73318PDQNR3 TLV73328PDQNR3