Discrete Devices Beam Lead Chips (Cont.) Zener Chips 100% Probed Parameters @ 25C Nominal Vz @ Iz Ip @VR 22 @ lz Mech. Similar Zener Volts | Volts | 12 Ohms Outline Ident. Type EIA Type Voltage Min. |Max. | mA uA Max.| V Max, Dwg. Code! BZ752 1N752 5.6 5.04] 6.16; 20 1 1 11 1 ZA BZ752A 1N752A 5.6 5.35] 5.85] 20 1 1 11 1 2A BZ755 1N755 15 6.75) 8.25} 20 0.1 1 6 1 2A BZ755A IN755A 718 7.13) 7.87) 20 0.1 1 6 1 ZA BZ758 1N758 10.0 9.0 j11.0 | 20 0.1 1 7 1 ZB BZ758A 1N758A 10.0 9.5 }10.5 | 20 0.1 1 7 1 ZB 82821 1N821 6.2 .89| 6.511 7.5 1 5 15 1 zc BZ963 1N963 12.0 9.6 | 14.4 10 5 8.6 115 1 ZB B2965 1N965 15.0 12.0 |18.0 | 8.5 5 110.8 16 1 DZ BZ969 1N969 22.0 17.6 |26.4 | 5.6 5 15.8 29 1 DZ Bz971 1N971 27.0 21.6 132.4 | 4.6 5 \194 41 1 OZ B2Z4010 Transient 9.5 8.0 112.0 | 300 - - 3 4 2D BZ4030 Suppressors 30 24 136 = |1000 - - 5 5 ZE Diode Chips 100% Probed Parameters @ 25C (Partial List) Max.| Mech. Simitar Ve max @le | Bymin@lp_ | IR max@Veg | Trr | Outline | fdent. Function Type EIA Type Volts mA | Volts vA | nA Volts | ns Dwg. Code! BD914 1 BY B20914 1N914 1.0 10 | 75 100 | 25 20 7 1 bY High speed , BD4148 1 oY B2D4148 1N4148 1.0 10 | 100 100 | 25 20 7 1 DY ; BD3600 1 DA High current and speed B2D3600 1N3600 4.0 100 | 60 5 7 100 50 4 1 DA BD457 1N457 1.2 200 | 70 100 | 25 60 - 1 DX High conductance, low leakage | BD458 1N458 1.2 200 | 150 100 | 25 125 - 1 DX BD433B 1N483B 1.2 200 | 80 100 | 25 60 - 1 DX High conductance, low leakage BD3595 1N3595 1.25 200 | 125 100 | 2 80 - | px B203595 1 DX High power BD4001 1N4001 1.25 | 1000 | 50 10 ; 1000 40 - 3 DH ! This identification code is etched into the back of the chip. 3-23