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NXP Semiconductors
BFR92AW
NPN 5 GHz wideband transistor
Rev. 03 — 12 March 2008 Product data sheet
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
FEATURES
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR92AW uses the same crystal
as the SOT23 version, BFR92A.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Marking code: P2.
Fig.1 SOT323
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter −−20 V
VCEO collector-emitter voltage open base −−15 V
ICcollector current (DC) −−25 mA
Ptot total power dissipation up to Ts=93°C; note 1 −−300 mW
hFE current gain IC= 15 mA; VCE =10V 65 90 135
C
re feedback capacitance IC= 0; VCE = 10 V; f = 1 MHz;
Tamb =25°C0.35 pF
fTtransition frequency IC= 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 GHz
GUM maximum unilateral power
gain IC= 15 mA; VCE = 10 V; f = 1 GHz;
Tamb =25°C14 dB
IC= 15 mA; VCE = 10 V; f = 2 GHz;
Tamb =25°C8dB
F noise figure IC= 5 mA; VCE = 10 V; f = 1 GHz;
Γs=Γopt
2dB
Tjjunction temperature −−150 °C
Rev. 03 - 12 March 2008
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2V
I
Ccollector current (DC) 25 mA
Ptot total power dissipation up to Ts=93°C; see Fig.2; note 1 300 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to
soldering point up to Ts=93°C; note 1 190 K/W
Fig.2 Power derating curve
0 50 100 200
200
0
MLB540
150T ( C)
o
s
Ptot
(mW)
300
400
100
Rev. 03 - 12 March 2008
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
CHARACTERISTICS
Tj=25°C (unless otherwise specified).
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector leakage current IE= 0; VCB =10V −−50 nA
hFE DC current gain IC= 15 mA; VCE = 10 V 65 90 135
Cccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz 0.6 pF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V; f = 1 MHz 0.9 pF
Cre feedback capacitance IC= 0; VCE = 10 V; f = 1 MHz 0.35 pF
fTtransition frequency IC= 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 GHz
GUM maximum unilateral power
gain; note 1 IC= 15 mA; VCE =10V;
f = 1 GHz; Tamb =25°C14 dB
IC= 15 mA; VCE =10V;
f = 2 GHz; Tamb =25°C8dB
F noise figure IC= 5 mA; VCE =10V;
f = 1 GHz; Γs=Γopt
2dB
IC= 5 mA; VCE =10V;
f = 2 GHz; Γs=Γopt
3dB
GUM 10 s21 2
1s
11 2
()1s
22 2
()
------------------------------------------------------------ dB.log=
Rev. 03 - 12 March 2008
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.3 DC current gain as a function of collector
current; typical values.
VCE =10V.
handbook, halfpage
0102030
120
0
40
80
MCD074
hFE
I (mA)
C
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
IC= 0; f = 1 MHz.
0
1.0
020
MGC883
48 V (V)
CB
Cre
(pF)
0.8
0.6
0.4
0.2
12 16
Fig.5 Transition frequency as a function of
collector current; typical values.
VCE = 5 V; f = 500 MHz; Tamb =25°C.
handbook, halfpage
4
2
0
MGC884
101
6
fT
(GHz)
I (mA)
C102
Rev. 03 - 12 March 2008
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.6 Gain as a function of collector current;
typical values.
VCE = 10 V; f = 500 MHz.
handbook, halfpage
0
30
20
10
0510
MGC885
15 20
gain
(dB)
I (mA)
C
MSG
GUM
Fig.7 Gain as a function of collector current;
typical values.
VCE = 10 V; f = 1 GHz.
handbook, halfpage
0
30
20
10
0510
MGC886
15 20
gain
(dB)
I (mA)
C
MSG
GUM
Fig.8 Gain as a function of frequency;
typical values.
VCE =10V;I
C= 5 mA.
handbook, halfpage
50
010
MGC887
102103104
10
20
30
40
gain
(dB)
f (MHz)
GUM
Gmax
MSG
Fig.9 Gain as a function of frequency;
typical values.
VCE =10V;I
C=15mA.
handbook, halfpage
50
010
MGC888
102103104
10
20
30
40
gain
(dB)
f (MHz)
GUM
Gmax
MSG
Rev. 03 - 12 March 2008
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.10 Minimum noise figure as a function of
collector current; typical values.
VCE =10V.
handbook, halfpage
4
2
0
MGC889
101
6
F
(dB)
I (mA)
C
f = 2 GHz
500 MHz
1 GHz
102
Fig.11 Minimum noise figure as a function of
frequency; typical values.
VCE =10V.
handbook, halfpage
4
2
0
MGC890
103
102
6
F
(dB)
f (MHz)
IC = 15 mA
5 mA
10 mA
104
Fig.12 Common emitter noise figure circles; typical values.
f = 500 MHz; VCE = 10 V; IC= 5 mA; Zo=50.
handbook, full pagewidth
MGC891
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
1
2
5
2 5
180o
2
0.5
0.50.2
0.2
0
0.2
1
5
F = 2 dB
opt
Γ
F = 1.6 dB
min
F = 4 dB
F = 3 dB
Rev. 03 - 12 March 2008
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.13 Common emitter noise figure circles; typical values.
f = 1 GHz; VCE = 10 V; IC= 5 mA; Zo=50Ω.
handbook, full pagewidth
MGC892
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
1
2
5
21 5
180o
2
5
0.5
0.2
0.2
0.5
0.2
0
(4)
(3)
(2)
(1)
(6)
(5)
(7)
(8)
(1) Γopt; Fmin = 2.1 dB.
(2) F = 2.5 dB.
(3) F = 3 dB.
(4) F = 4 dB.
(5) Γms;G
max = 15.7 dB.
(6) G = 15 dB.
(7) G = 14 dB.
(8) G = 13 dB.
Fig.14 Common emitter noise figure circles; typical values.
f = 2 GHz; VCE = 10 V; IC= 5 mA; Zo=50Ω.
handbook, full pagewidth
MGC893
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
1
2
5
21 5
180o
2
5
0.5
0.5
0.2
0
0.2
0.2
(3)
(2)
(1)
(5)
(4)
(6)
(7)
(8)
(1) Γopt; Fmin = 3 dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
(5) Γms;G
max = 9.1 dB.
(6) G = 8 dB.
(7) G = 7 dB.
(8) G = 6 dB.
Rev. 03 - 12 March 2008
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.15 Common emitter input reflection coefficient (s11); typical values.
VCE = 10 V; IC= 15 mA; Zo=50.
handbook, full pagewidth
MGC894
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
0.2
0.5
1
2
5
2
0.2
2
5
5
o
180 0.2 1
00.5
40 MHz
3 GHz
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
VCE = 10 V; IC=15mA.
handbook, full pagewidth
MGC895
0o
90o
135o
180o
90o
50 40 30 20 10
45o
135o45o
40 MHz 3 GHz
Rev. 03 - 12 March 2008
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
VCE = 10 V; IC=15mA.
handbook, full pagewidth
MGC896
0o
90o
135o
180o
90o
0.25 0.20 0.15 0.10 0.05
45o
135o45o
40 MHz
3 GHz
Fig.18 Common emitter output reflection coefficient (s22); typical values.
VCE = 10 V; IC= 15 mA; Zo=50.
handbook, full pagewidth
MGC897
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
1
0.5
0
0.2
0.5
1
2
0.2 0.5 2
40 MHz
3 GHz
0.2
1 5
5
2
5
Rev. 03 - 12 March 2008
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NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92AW
PACKAGE OUTLINE
Fig.19 SOT323.
Dimensions in mm.
handbook, full pagewidth
0.25
0.10
B
0.2
0.2 A
A
M
M
12
3
0.65
1.3
2.2
1.8
0.40
0.30
B
1.35
1.15
2.2
2.0
detail X
X
1.1
max
0.1
0.0
1.0
0.8
0.3
0.1
0.2
MBC871
Rev. 03 - 12 March 2008
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NXP Semiconductors BFR92AW
NPN 5 GHz wideband transistor
Legal information
Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
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or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Rev. 03 - 12 March 2008
12 of 13
NXP Semiconductors BFR92AW
NPN 5 GHz wideband transistor
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 March 2008
Document identifier: BFR92AW_N_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFR92AW_N_3 20080312 Product data sheet - BFR92AW_2
Modifications: Quick reference data and Characteristics Table; DC current gain value changed
BFR92AW_2 19950918 Product specification - BFR92AW_1
BFR92AW_1 19921001 - - -