©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
BC635/637/639
NPN Epitaxia l Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
• PW=5ms, Duty Cycle=10%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCER Collector-Emitter Volt age at RBE=1KΩ
: BC635
: BC637
: BC639
45
60
100
V
V
V
VCES Collector-Emitter Voltage
: BC635
: BC637
: BC639
45
60
100
V
V
V
VCEO Collector-Emitter Voltage
: BC635
: BC637
: BC639
45
60
80
V
V
V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 1 A
ICP Peak Collector Current 1.5 A
IBBase Current 100 mA
PCCollector Power Dissipation 1 W
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage
: BC635
: BC637
: BC639
IC=10mA, IB=0 45
60
80
V
V
V
ICBO Collector Cut-off Current VCB=30V, IE=0 0.1 µA
IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 µA
hFE1
hFE2
hFE3
DC Current Gain : All
: BC635
: BC637/BC639
: All
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
25
40
40
25
250
160
VCE(sat) Collector-Emitter Satu ration Voltage IC=500mA, IB=50mA 0.5 V
VBE(on) Base-Emitter On Voltage VCE=2V, IC=500mA 1 V
fTCurrent Gain Bandwidth Product VCE=5V, IC=10mA,
f=50MHz 100 MHz
BC635/637/639
Switching and Amplifier Applications
• Complement to BC636/638/640
1. Emitter 2. Collector 3. Base
TO-92
1
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
BC635/637/639
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
0 1020304050
0
40
80
120
160
200
IB = 0.2 m A
IB = 0.4 m A
IB = 0.6 m A
IB = 0.8 m A
IB = 1.0 m A
IB = 1.2 m A
IB = 1.4 m A
IB = 1.6 m A
IB = 1.8 m A
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR -EMITTER VO LTAGE
1 10 100 1000
10
100
1000
VCE = 2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECT OR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
VCE = 2V
IC[mA], COLLECT OR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
110100
1
10
100
f=1MHz
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
Package Dimensions
BC635/637/639
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
TO-92
©2002 Fairchild Semiconductor Corporation Rev. I1
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