BC369ZL1G - ON SEMICONDUCTOR

March, 2007 − Rev. 6 1Publication Order Number:

BC368/D

NPN − BC368; PNP − BC369

Amplifier Transistors

Voltage and Current are Negative for

PNP Transistors

Features

•These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage VCEO 20 Vdc

Collector − Emitter Voltage VCES 25 Vdc

Emitter − Base Voltage VEBO 5.0 Vdc

Collector Current − Continuous IC1.0 Adc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD625

5.0 mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W

Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

COLLECTOR

BASE

EMITTER

COLLECTOR

BASE

EMITTER

NPN PNP

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

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MARKING DIAGRAMS

BC368ZL1G TO−92

(Pb−Free) 2000 / Ammo Pack

BC369ZL1G TO−92

(Pb−Free) 2000 / Ammo Pack

BC368G TO−92

(Pb−Free) 5000 Units / Bulk

12312

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 14

BC36

AYWW G

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

369

AYWW G

NPN − BC368; PNP − BC369

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mA, IB = 0) V(BR)CEO 20 − − Vdc

Collector−Base Breakdown Voltage

(IC = 100 mA, IE = 0 ) V(BR)CBO 25 − − Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mA, IC = 0) V(BR)EBO 5.0 − − Vdc

Collector Cutoff Current

(VCB = 25 V, IE = 0)

(VCB = 25 V, IE = 0, TJ = 150°C)

ICBO −

−−

−10

1.0 mAdc

mAdc

Emitter Cutoff Current

(VEB = 5.0 V, IC = 0) IEBO − − 10 mAdc

ON CHARACTERISTICS

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

(VCE = 1.0 V, IC = 0.5 A) BC368, 369

(VCE = 1.0 V, IC = 1.0 A)

hFE 50

−

375

−

Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 20 MHz) fT65 − − MHz

Collector−Emitter Saturation Voltage

(IC = 1.0 A, IB = 100 mA) VCE(sat) − − 0.5 V

Base−Emitter On Voltage

(IC = 1.0 A, VCE = 1.0 V) VBE(on) − − 1.0 V

NPN − BC368; PNP − BC369

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IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

160

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Temperature Coefficient

−0.8

IC, COLLECTOR CURRENT (mA)

Figure 5. Current−Gain — Bandwidth Product

Cobo

Cibo

5.0

1.0

−2.4

−2.0

−1.2

VCE, COLLECTOR VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

VB , TEMPERATURE COEFFICIENT (mV/ C)°θC, CAPACITANCE (pF)

1.0

0.8

0.6

0.4

0.2

0.01 0.1 10 1001.0

1.0

0.8

0.6

0.4

0.2

1.0 10 1000100

2.0

TJ = 25°C

IC = 10 mA

TJ = 25°C

VBE(on) @ VCE = 1.0 V

VCE(sat) @ IC/IB = 10

qVB for VBE

Cibo

hFE, CURRENT GAIN

200

100010 50 100

100

VCE = 1.0 V

TJ = 25°C

200 500 0.02 0.05 0.2 0.5 2.0 5.0 20 50

50 mA

100 mA

250 mA

500 mA

1000 mA

2.0 5.0 20 50 200 500

−1.6

−2.8

1.0 10 10001002.0 5.0 20 50 200 500

120

3.0

4.0

5.0

TJ = 25°C

Cobo

300

IC, COLLECTOR CURRENT (mA)

Figure 6. Capacitance

10 20 50

200

100

100 200 500

fT, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

1000

VCE = 10 V

TJ = 25°C

f = 20 MHz

VBE(sat) @ IC/IB = 10

NPN − BC368; PNP − BC369

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PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX

MILLIMETERS

A4.45 5.20

B4.32 5.33

C3.18 4.19

D0.40 0.54

G2.40 2.80

J0.39 0.50

K12.70 −−−

N2.04 2.66

P1.50 4.00

R2.93 −−−

V3.43 −−−

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Phone: 81−3−5773−3850

BC368/D

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