2SK1010-01 N-CHANNEL SILICON POWER MOS-FET M@ Features @\ligh speed switching @|ow on-resistance @ {Jo secondary breakdown low driving power High voltage @\Vocs= t30V Guarantee / \valanche-proof Applications @ Switching regulators e@UPS @()C-DC converters @(jeneral purpose power amplifier M@ Max. Ratings and Characteristics @)\bsolute Maximum Ratings(Tc=25C} FUJI POWER MOS- F-IT SERIES Outline Drawings FET 27 1: Gate 2: Drain 3: Source JEDEC TO-220AB ElAJ SC-46 Wi Equivalent Circuit Schematic Items Symbols Ratings Units ___ Drain-source voltage Voss 500 Vv _ Continuous drain current Ip 6 A Drain(p) ___ Pulsed drain current Ipwuts) 18 A ran _ Continuous reverse drain current| Tor 6 A __ Gate-source peak voltage Vass +30 Vv | __ Max. power dissipation Py &0 Ww Gate(G) Operating and storage Ten 150 Cc ___ temperature range Tstg 55~+4+150| C Source(S) @i:lectrical Characteristics(Tc= 25C} _ Items Symbols Test Conditions Min. Typ. Max. | Units ___ Drain-source breakdown voltage | Vsrspss Ip=lImA_ Ves=0V 500 Vv ___ Gate threshold voltage Vesan Ip=lmA Vos=Vas 25 3.5 5.0 Vv , a Vs =500V Ten =25C 10 500 uA 7 Zero gate voltage drain current | Inss Ves=0V Ton = 125C 0.2 LO mA ___ Gate-source leakage current_| Tess os =+30V Vos=0V 10 100 nA ___ Drain-source on-state resistance | Rosin Ip=3A Ves=10V 1.2 1.6 a ___ Forward transconductance Bis Ip=3A Vos=25V 2.0 4.0 5 ___ Input capacitance Ciss Vos =25V 700 1000 ___ Output capacitance Coss Vos=0V 100 150 pF __ Reverse transfer capacitance | Cres f =1MHz 45 65 Turn-on time ton Caton) _ _ 20 30 hag + taxon + t) ts wee Sie eee a Turn-off time torr taco R. = 250 80 120 _ (ator) + tr) te 50 80 __ Diode forward on-valtage Vep Ir=2XIpe Ves=O0V Ten =25C 1.0 15 Vv __ Reverse recovery time ter Is=Ipe dif =100A/ys Ten =25C 350 ns @ hermal Characteristics ttems Symbols Test Conditions Min. | Typ. | Max. | Units Runtenay channel to air 75.0 C/W Th 1 Resistz = eTmar RESIstance Rencene) channel to case 1.56 | C/W A2-82 FUJI POWER MOS-FET 2SK 1010-01 Wi Characteristics To=t(Vos):80us pulse test.Tco=25C Vos= 1ov 7.5V | OV 0 10 20 30 VoslV) Typical Output Characteristics lp=f(Vos):80ys pulse test, (A) 0 5 lo Vas (VJ Typical Transfer Characteristics gts=t( p)-BOus pulse test.Vos=25V.Toh=25C gts 2 (s) 2 8 InCA) Typical Forward Transconductance vs. lo A2-83 Roxon =t(Tohh] p=34.Ves=10V Rosie 2 (a) 1 0 50 oO 50 100 180 Tonl*C) On State Resistance vs. Tcr Roston=t1 5):80us pulse test.Teh=25'C 3 Rosiom 2 (0) 0 5 10 16 IpCA) Typical Drain-Source on State Resistance vs. |p Vestw=f(Toh):] p=ImA.Vos=Vos Vesum 2 wv) 9 50 100 150 Ten (CJ Gate Threshold Voltage vs. Ten FUJI POWER MOS-FET 2SK 1010-01 C=f(Vps) Vos=OV.f=IMHz 10 c 107 (nF) 5 2 "0 10 20 30 Vos(] Typical Capacitance vs. Vos lr=f(Vos):BOys pulse test io! 5 Ten=25'C typ. Ir 19 (A) 5 o 0.4 0.8 12 VsolV) Forward Characteristics of Reverse Diode 10 =| Cf Nv) 0.01 19% =a = =2 =I 0 10-8 10 10 10 10 10 t(S} Transient Thermal Impedance Vos=f(Qg)] p=6A 0 20 40 60 Og(nC] Typical Input Charge Po=f(Te) Po (Ww) a 50 100 150 TCC) Allowable Power Dissipation vs. Tc 10! Lo=f(vos) D=0.01 10 {A} Vos(V] Safe Operating Area A2-84 cj: B NN TOASUSONES (EOL, RH P-97. MES HE o YS) ROO. ERO kD RMOP ee BBEMSIEMHDET COAR OTHMAN TOSN MEM AHSBSCIL, TONMORMIROLHB St AELC FR Sil Toe at, AA oP CAL TASCAM, BPRS ALARA SOME RAT SEOTHO. KA OSI ES CLRMA Al. FORMER O SHIT AS BREESE SAHOO TBS TIE O TREND ECA, . BLRALRATREORELERROMELIC BY TORT. LOL. BANS b ARE CAPR T SBE ASO ED, SERRA MOA REL CASS ARGO ROMAIN T SIRO, MSIE AME ICTR, MB ILAR AT. GOMER Laat oe ERE MROLMOFREAEL TS Ra, Sas OPC TOS MM, PROB ME OTCRENS PALO LI STM ORICA eel ee L Sh They, -dYyean-s OAR HUES CAE) - at - THER toF AED A TILES + RTA IY PLAS EMO Ky bo oe HAARAIPTCMOMME. PHO LDA RORAT EOL EAS SHS OP ROD eI, TC BRAS MMOL, THEOBTCL EO, LOAF OPFOR TNS OMBICIEAT Zitic, FC ICM AEN BLAME BRL CL, MEL ESI Se OPT YAF ARE, ReHBOLMOMOSERSMC SL Lape, * AR CK, ABAD te E) + Wee Fel Sa es AR ait OME ae a + AUR ATARI Be OE rae RAP CR * HERO fo OT) he ATE BOTA MMS BREN STOEL G GMS. AATOPIICMONREMAL ADS ets, + PE BR he + ARETE CF BS AGE a + HES PRS ae ~ aR ER AAFUSLO-HMEASPMOMMMB COU TIn, WHC KS MOR GASB ST, LOAF UZONAIIO RMON BOREL ES. RST SCI E i, FOU ASUR RMIT COR Rh, ALM ORISA EMILE eho SATS AR EG OUGHT A EO TAD EGA, aretha QT MRA NT EM ERS RRS RARE (03) 5988-7657 ARMIES om (06) 455-6467 151 ERM ASKIE 4 KOT B0R3S (03) 5388-7681 ALBERS @ (0764) 41-1231 ms Grn q RAAB AR o (03) 5388-7680 MeSeR @ (0878) 51-0185 @ (93) 5388-7651 RESMER mm (0263) 36-6740 = PAIRS RA Me (052) 204-0295 TS Me BP tm (03) 5368-7685 = APN ALHIRSERER (092) 733-7132 J