IRF532,533 12.0 AMPERES 100, 60 VOLTS RDS(ON) = 0.25 0 >OWERMOS FET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL 3 to achieve low on-resistance with excellent device rugged- sy ness and reliability. This design has been optimized to give superior performance Ss g in most switching applications including: switching power . . supplies, inverters, converters and solenoid/relay drivers. onCASE STYLE TO-220AB Also, the extended safe operating area with good linear 40411026) 18295 soo. 95 transfer characteristics makes it well suited for many linear [+ evieee) Ty TTR. 3217 or Le BEES applications such as audio amplifiers and servo motors. pO 2 2s r A Features No hi t- LE TemebRAruRE POINT e Polysilicon gate Improved stability and reliabilit / + 9580.02 y 9 P Y Y Taga | Bre .22018.50} No secondary breakdown Excellent ruggedness + wants + -130(3. 05 baie 7 e Ultra-fast switching Independent of temperature ZA io mee TERM.1 .B00(12.7)MIN. e Voitage controlled High transconductance TERM2 ose e Low input capacitance Reduced drive requirement ren] | by ope . S808 0.84) .105(2.87 LJ 4 30712.72 e Excellent thermal stability Ease of paralleling See aes 0871220) UNIT TYPE |TERM.WTERM.2| TERM.3 TAa POWER MOS FET|TO-220-AB} GATE | DRAIN] SOURCE! ORAIN maximum ratings (To = 25C) (unless otherwise specified) RATING SYMBOL IRF532 IRF533 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Ras = 1IMN Vpar 100 60 Voits Continuous Drain Current @ Tc = 25C Ip 12 12 A @ To = 100C 8 8 A Pulsed Drain Current lpm 48 48 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 75 Waits Derate Above 25C 0.6 0.6 Ww/C Operating and Storage Junction Temperature Range Ty, Tste -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case ReJc 1.67 1.67 C/N Thermal Resistance, Junction to Ambient Regia 80 80 CAN Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 183 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC _| SYMBOL | MIN | TYP MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF532 BVoss 100 _ _ Volts (Vas = OV, Ip = 250 uA) IRF533 60 _ Zero Gate Voltage Drain Current lpss / (Vps = Max Rating, Vag = OV, To = 25C) ~_ 250 HA (Vps = Max Rating, 0.8, Veg = OV, To = 125C) _ _ 1000 Oven eno Current lass _ _ +500 nA on characteristics* Gate Threshold Voltage To = 25C | Vast) 2.0 i 4.0 Volts (Vos = Vas, |p = 250 uA) On-State Drain Current | 42 _ A (Vgs = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 8A) Rps(On) _ 0.18 0.25 Ohms Forward Transconductance (Vps = 10V, Ip = 8A) Ofs 3.2 4.0 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss 650 800 pF Output Capacitance Vps = 26V Coss _ 240 500 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 55 150 pF switching characteristics Turn-on Delay Time Vos = 30V ta(on) _ 15 ns Rise Time Ip = 8A, Vag = 15V tr _ 55 _ ns Turn-off Delay Time Raen = 500, Res = 12.50 ta(oft) _ 30 ns Fall Time (Res (Equiv,) = 109) tr _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 12 A Pulsed Source Current Igu _ _ 48 A Diode Forward Voltage _ 1.0 \ (To = 25C, Vag = OV, Ig = 12A) VsD 2.3 Volts Reverse Recovery Time trr _ 210 _ ns (Ig = 14A, dig/dt = 100A/yusec, To = 125C) Qrar _ 1.4 _ uC *Pulse Test: Pulse width < 300 ys, duty cycle = 2% 100 88 > a Q oS ORS Nn RA ' MAY BE LIM BYR 1p. DRAIN CURRENT (AMPERES) 3 T.= 9 92; a aa nu 9 1 2 4 6 810 20 40 6080100 200 Vps- DRAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 184 CONDITIONS: Ragin) CONDITIONS: Ip = 8.0 A, Vgg = 10V V@s(TH) CONDITIONS: Ip = 250uA, Vg Vgg VesitH} Rosion) AND Vegcry) NORMALIZED -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rpygjoy, AND Vagiru, VS- TEMP.