LESHAN RADIO COMPANY, LTD.
MUN5211dw–1/8
1
3
2
MUN5211DW1T1
Series
SOT
-
363
CASE 419B STYLE1
6
4
5
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
13
2
64
5
Q1
Q2
R1
R2
R1R2
7X
MARKING DIAGRAM
132
645
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
7X = Device Marking
= (See Page 2)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating Symbol Value Unit
Collector-Base Voltage V CBO 50 Vdc
Collector-Emitter Voltage V CEO 50 Vdc
Collector Current I C100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation P D187 (Note 1.) mW
T A = 25°C
Derate above 25°C mW/°C
Thermal Resistance – R θJA 670 (Note 1.) °C/W
Junction-to-Ambient 490 (Note 2.)
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient R θJA 493 (Note 1.)
325 (Note 2.) °C/W
Thermal Resistance –
Junction-to-Lead R θJL 188 (Note 1.)
208 (Note 2.) °C/W
Junction and Storage
Temperature T J , T stg –55 to +150 °C
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor . These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
LESHAN RADIO COMPANY, LTD.
MUN5211dw–2/8
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R 1(K) R 2(K) Shipping
MUN5211DW1T1 SOT–363 7A 10 10 3000/Tape & Reel
MUN5212DW1T1 SOT–363 7B 22 22 3000/Tape & Reel
MUN5213DW1T1 SOT–363 7C 47 47 3000/Tape & Reel
MUN5214DW1T1 SOT–363 7D 10 47 3000/Tape & Reel
MUN5215DW1T1 (Note 3.) SOT–363 7E 10 3000/Tape & Reel
MUN5216DW1T1 (Note 3.) SOT–363 7F 4.7 3000/Tape & Reel
MUN5230DW1T1 (Note 3.) SOT–363 7G 1.0 1.0 3000/Tape & Reel
MUN5231DW1T1 (Note 3.) SOT–363 7H 2.2 2.2 3000/Tape & Reel
MUN5232DW1T1 (Note 3.) SOT–363 7J 4.7 4.7 3000/Tape & Reel
MUN5233DW1T1 (Note 3.) SOT–363 7K 4.7 47 3000/Tape & Reel
MUN5234DW1T1 (Note 3.) SOT–363 7L 22 47 3000/Tape & Reel
MUN5235DW1T1 (Note 3.) SOT–363 7M 2.2 47 3000/Tape & Reel
MUN5236DW1T1 (Note 3.) SOT–363 7N 100 100 3000/Tape & Reel
MUN5237DW1T1 (Note 3.) SOT–363 7P 47 22 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V CB = 50 V, I E = 0) I CBO – – 100 nAdc
Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO – – 500 nAdc
Emitter-Base Cutoff Current MUN5211DW1T1
(V EB = 6.0 V, I C = 0) MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
MUN5211DW1T1 Series
I EBO –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= 10 µA, I
E
= 0)
V (BR)CBO 50 – – Vdc
Collector-Emitter Breakdown Voltage(Note 4.)(I
C
= 2.0 mA,I
B
=0)
V (BR)CEO 50 – – Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
8 8
LESHAN RADIO COMPANY, LTD.
MUN5211dw–3/8
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(Note 5.)
DC Current Gain MUN5211DW1T1
(V CE = 10 V, I C = 5.0 mA) MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5235DW1T1
MUN5235DW1T1
MUN5211DW1T1 Series
h FE –
–
–
–
–
–
–
–
–
–
–
–
–
–
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
MUN5211DW1T1
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5213DW1T1
MUN5236DW1T1
MUN5237DW1T1
V OL –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kΩ)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 kΩ)
MUN5230DW1T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1
Collector-Emitter Saturation Voltage
(I
C
= 10mA,I
B
= 0.3 mA)
V CE(sat) – – 0.25 Vdc
(I
C
= 10mA, I
B
= 5mA) MUN5230DW1T1/MUN5231DW1T1
(I
C
= 10mA, I
B
= 1mA) MUN5215DW1T1/MUN5216DW1T1
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
V OH 4.9 – – Vdc
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
LESHAN RADIO COMPANY, LTD.
MUN5211dw–4/8
Input Resistor MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
MUN5211DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(Note 6.)
P D , POWER DISSIPATION (mW)
300
250
200
150
100
50
0
T A , AMBIENT TEMPERA TURE (°C)
Figure 1. Derating Curve
–50 0 50 100 150
R 17.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kΩ
Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/
MUN5213DW1T1/MUN5236DW1T1
MUN5214DW1T1
MUN5215DW1T1/MUN5216DW1T1
MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5237DW1T1
R 1 /R 20.8
0.17
–
0.8
0.055
0.38
0.038
1.7
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
833°C
LESHAN RADIO COMPANY, LTD.
MUN5211dw–5/8
MUN5211DW1T1 Series
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
1
0.1
0.01
0.001 020 4050
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
101 10 100
4
3
2
1
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
10
1
0.1
01020304050
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5211DW1T1
LESHAN RADIO COMPANY, LTD.
MUN5211dw–6/8
MUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5212DW1T1
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
I C ,COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input oltage
10
1
0.1
0.01 020 4050
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
10 1 10 100
4
3
2
1
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
100
10
1
0.1
01020304050
LESHAN RADIO COMPANY, LTD.
MUN5211dw–7/8
MUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5213DW1T1
I C , COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 15. Output Current versus Input oltage
10
1
0.1
0.01 020 4050
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
101 10 100
1
0.8
0.6
0.4
0.2
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
100
10
1
0.1 01020304050
LESHAN RADIO COMPANY, LTD.
MUN5211dw–8/8
MUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5214DW1T1
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
I C ,COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input oltage
1
0.1
0.01
0.001 020406080
h FE , DC CURRENT GAIN (NORMALIZED)
300
250
200
150
100
50
01 2 3 4 5101520405060708090100
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 101520253035404550
C ob CAPACITANCE (pF)
100
10
1012345678910
10
1
0.1
01020304050
